Transistor 2SC1980 Silicon NPN epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SA921 Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. Low noise voltage NV. ■ Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7 V Peak collector current ICP 50 mA Collector current IC 20 mA Collector power dissipation PC 250 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics +0.2 0.45 –0.1 1.27 1.27 1 2 3 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A (Ta=25˚C) Parameter Symbol Collector cutoff current +0.2 0.45 –0.1 2.3±0.2 ● 13.5±0.5 ● 5.1±0.2 ■ Features 4.0±0.2 Conditions ICBO VCB = 50V, IE = 0 min typ max Unit 0.1 µA 1 µA ICEO VCE = 50V, IB = 0 Collector to base voltage VCBO IC = 10µA, IE = 0 120 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 120 V Emitter to base voltage VEBO IE = 10µA, IC = 0 7 V * Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) IC = 20mA, IB = 2mA Transition frequency fT VCB = 5V, IE = –2mA, f = 200MHz Noise voltage *h FE VCE = 5V, IC = 2mA VCE = 40V, IC = 1mA, GV = 80dB NV Rg = 100kΩ, Function = FLAT 180 700 0.6 200 V MHz 150 mV Rank classification Rank R S T hFE 180 ~ 360 260 ~ 520 360 ~ 700 1 Transistor 2SC1980 PC — Ta IC — VCE 60 350 300 250 200 150 100 40µA 16 35µA 30µA 12 25µA 20µA 8 15µA 10µA 4 50 Ta=75˚C –25˚C 40 30 20 10 5µA 0 80 120 160 200 0 0 2 4 6 8 10 12 VCE(sat) — IC 3 1 0.3 Ta=75˚C 0.1 –25˚C 0.03 0.3 1 3 10 30 Ta=75˚C 600 25˚C –25˚C 400 200 0.3 1 3 10 30 100 Collector current IC (mA) Cob — VCB NV — IC IE=0 f=1MHz Ta=25˚C 5 4 3 2 1 VCE=10V GV=80dB Function=FLAT 140 Noise voltage NV (mV) 6 120 100 Rg=100kΩ 80 60 22kΩ 40 4.7kΩ 20 0 1 3 10 30 100 Collector to base voltage VCB (V) 600 500 400 300 200 0 0.01 0.03 0.1 0.3 Collector current IC (mA) 0 – 0.1 – 0.3 –1 –3 –10 –30 Emitter current IE (mA) 160 7 700 100 Collector current IC (mA) 8 2.0 VCB=5V Ta=25˚C 800 0 0.1 100 1.6 800 1000 10 1.2 VCE=10V Forward current transfer ratio hFE 30 0.8 fT — I E 1200 IC/IB=10 0.01 0.1 0.4 Base to emitter voltage VBE (V) hFE — IC 100 25˚C 0 Collector to emitter voltage VCE (V) Transition frequency fT (MHz) 40 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) 25˚C 50 Collector current IC (mA) IB=50µA 45µA 20 400 0 Collector output capacitance Cob (pF) VCE=10V Ta=25˚C 450 0 2 IC — VBE 24 Collector current IC (mA) Collector power dissipation PC (mW) 500 1 –100