IRFR410, IRFU410 Data Sheet 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17445. Ordering Information PART NUMBER July 1999 File Number 3372.2 Features • 1.5A, 500V • rDS(ON) = 7.000Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • High Input Impedance • 150oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol PACKAGE BRAND IRFU410 TO-251AA IFU410 IRFR410 TO-252AA IFR410 NOTE: When ordering, use the entire part number. D G S Packaging JEDEC TO-251AA SOURCE DRAIN GATE JEDEC TO-252AA GATE SOURCE DRAIN (FLANGE) DRAIN (FLANGE) 4-401 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRFR410, IRFU410 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFR410, IRFU410 UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS 500 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 500 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 1.5 1.2 A A Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 3.0 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD 42 W 0.33 W/oC Single Pulse Avalanche Rating (See Figure 5) (Note 4) . . . . . . . . . . . . . . . . . . . . . . .EAS Refer to UIS Curve mJ Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300 260 oC oC Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER Drain to Source Breakdown Voltage SYMBOL BVDSS TEST CONDITIONS ID = 250µA, VGS = 0V MIN TYP MAX UNITS 500 - - V - 0.61 - V/oC Temperature Coefficient of Breakdown Voltage ∆BVDSS/∆TJ Reference to 25oC, ID = 250µA Gate to Source Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA 2 - 4 V IDSS VDS = 500V, VGS = 0V - - 25 µA VDS = 500V, VGS = 0V, TJ = 125oC - - 250 µA VGS = ±20V - - ±100 nA ID = 1.5A, VGS = 10V, (Figure 9) - - 7.000 Ω 0.5 - - S - 7 - ns - 10 - ns td(OFF) - 24 - ns tf - 15 - ns - 9 12 nC - 1.1 1.4 nC - 5 7 nC - 210 - pF Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance (Note 3) Forward Transconductance (Note 3) Turn-On Delay Time IGSS rDS(ON) gfs td(ON) Rise Time tr Turn-Off Delay Time Fall Time Total Gate Charge Qg(TOT) VDS = 50V, IDS = 0.75A, (Figure 8) VDD = 250V, ID ≈ 1.5A, RGS = 24Ω, RL = 167Ω, MOSFET Switching Times are Essentially Independent of Operating Temperature VGS = 10V, ID ≈ 1.5A, VDS = 0.8 x Rated BVDSS, (Figure 12) Gate Charge is Essentially Independent of Operating Temperature Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Input Capacitance CISS Output Capacitance COSS - 30 - pF Reverse Transfer Capacitance CRSS - 7 - pF 4-402 VGS = 0V, VDS = 25V, f = 1.0MHz, (Figure 10) IRFR410, IRFU410 Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL TEST CONDITIONS Internal Drain Inductance LD Measured From the Drain Lead, 6mm (0.25in) From Package to Center of Die Internal Source Inductance LS Measured From The Source Lead, 6mm (0.25in) From Header to Source Bonding Pad MIN TYP MAX UNITS - 4.5 - nH - 7.5 - nH - - 3.0 oC/W - - 110 oC/W MIN TYP MAX UNITS - - 1.5 A - - 3.0 A - - 2.0 V 130 - 520 ns Modified MOSFET Symbol Showing the Internal Devices Inductances D LD G LS S Thermal Resistance Junction to Case RθJC Thermal Resistance Junction to Ambient RθJA Free Air Operation Source to Drain Diode Specifications PARAMETER SYMBOL Continuous Source to Drain Current ISD Pulse Source to Drain Current (Note 3) ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode D G S Source to Drain Diode Voltage (Note 2) VSD Reverse Recovery Time trr TJ = 25oC, ISD = 1.5A, VGS = 0V, (Figure 11) TJ = 25oC, ISD = 1.5A, dISD/dt = 100A/µs NOTES: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve. (Figure 3) 4. VDD = 50V, starting TJ = 25oC, L = 40µH, RG = 25Ω, peak IAS = 1.5A. Typical Performance Curves Unless Otherwise Specified 2.0 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 1.5 1.0 0.5 0.2 0 0 50 100 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 4-403 150 0 25 50 75 100 125 TC, CASE TEMPERATURE (oC) 150 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE IRFR410, IRFU410 Unless Otherwise Specified (Continued) 1 THERMAL IMPEDANCE ZθJC, NORMALIZED TRANSIENT Typical Performance Curves 0.5 0.2 0.1 PDM 0.1 0.05 t1 0.02 0.01 t2 NOTES: DUTY FACTOR D = t1/t2 TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE 10-1 10-5 10-4 0.1 10-3 10-2 t1, RECTANGULAR PULSE DURATION (s) 10 1 FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 5.0 10 TJ = MAX RATED, SINGLE PULSE TC = 25oC 1 1ms 0.10 OPERATION IN THIS AREA LIMITED BY rDS(ON) STARTING TJ = 25oC IAS, (A) DRAIN CURRENT (A) IDM 100µs 10ms DC 1.0 IF R = D tAV = (L)(IAS)/(1.3 RATED BVDSS - VDD) IF R ≠ D tAV = (L/R) IN [(IDS X R)/(1.3 RATED BVDSS - VDD) + 1] 0.5 0.5 0.01 1 10 100 DRAIN TO SOURCE VOLTAGE (V) STARTING TJ = 150oC 1000 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 1 3 VGS 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 0.1 0.1 VGS 10V 8.0V 7.0V 6.0V 1 5.5V 5.0V BOTTOM 4.5V TOP ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 0.100 tAV, TIME IN AVALANCHE (ms) FIGURE 5. UNCLAMPED INDUCTIVE SWITCHING 3 1 0.010 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX TC = 25oC 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 6. OUTPUT CHARACTERISTICS, TC = 25oC 4-404 500 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX TC = 150oC 0.1 0.1 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 7. OUTPUT CHARACTERISTICS, TC = 150oC 500 IRFR410, IRFU410 Typical Performance Curves 3 25oC PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDS = 30V NORMALIZED DRAIN TO SOURCE ON RESISTANCE ID, DRAIN CURRENT (A) 3 Unless Otherwise Specified (Continued) 150oC 1 0.1 3 4 5 6 7 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX ID = 1.5A, VGS = 10V 2 1 0 8 -60 -40 VGS, GATE VOLTAGE (V) FIGURE 8. TRANSFER CHARACTERISTICS ISD, SOURCE TO DRAIN CURRENT (A) 3 250 C, CAPACITANCE (pF) 160 FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 300 CISS 200 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD 150 100 COSS 50 CRSS 0 -20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (oC) 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) 25 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VGS = 0V 0.1 0.4 0.5 0.6 VGS, GATE TO SOURCE VOLTAGE (V) ID = 1.5A VDS = 400V VDS = 250V VDS = 100V 18 12 8 4 0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Qg(TOT), TOTAL GATE CHARGE (nC) FIGURE 12. GATE TO SOURCE VOLTAGE vs GATE CHARGE 4-405 0.8 0.9 FIGURE 11. SOURCE TO DRAIN DIODE VOLTAGE 20 1 0.7 VSD, SOURCE TO DRAIN VOLTAGE (V) FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 0 25oC 150oC 1 1.0 IRFR410, IRFU410 Test Circuits and Waveforms VDS BVDSS L tP VARY tP TO OBTAIN + RG REQUIRED PEAK IAS VDS IAS VDD VDD - VGS DUT tP 0V IAS 0 0.01Ω tAV FIGURE 13. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 14. UNCLAMPED ENERGY WAVEFORMS tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + VDD RG 10% 10% 0 DUT 90% VGS VGS 0 FIGURE 15. SWITCHING TIME TEST CIRCUIT 0.2µF 50% PULSE WIDTH 10% FIGURE 16. RESISTIVE SWITCHING WAVEFORMS VDS (ISOLATED SUPPLY) CURRENT REGULATOR 12V BATTERY 50% VDD Qg(TOT) SAME TYPE AS DUT 50kΩ Qgd 0.3µF VGS Qgs D VDS DUT G 0 IG(REF) S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR FIGURE 17. GATE CHARGE TEST CIRCUIT 4-406 IG(REF) 0 FIGURE 18. GATE CHARGE WAVEFORMS IRFR410, IRFU410 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. 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