IRF HFA08TA60CPBF

PD-95735
HFA08TA60CPbF
HEXFRED
Ultrafast, Soft Recovery Diode
TM
2
Features
•
•
•
•
•
•
VR = 600V
Ultrafast Recovery
Ultrasoft Recovery
Very Low IRRM
Very Low Qrr
Specified at Operating Conditions
Lead-Free
VF = 1.8V
Qrr * = 40nC
1
Benefits
di(rec)M/dt * = 280A/µs
* 125°C
3
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching
Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
Description
International Rectifier's HFA08TA60C is a state of the art center tap ultra fast
recovery diode. Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier previously available.
With basic ratings of 600 volts and 4 amps per Leg continuous current, the
HFA08TA60C is especially well suited for use as the companion diode for IGBTs
and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product
line features extremely low values of peak recovery current (IRRM) and does not
exhibit any tendency to "snap-off" during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching transistor.
These HEXFRED advantages can help to significantly reduce snubbing,
component count and heatsink sizes. The HEXFRED HFA08TA60C is ideally
suited for applications in power supplies and power conversion systems (such
as inverters), motor drives, and many other similar applications where high
speed, high efficiency is needed.
TO-220AB
Absolute Maximum Ratings
Parameter
VR
IF @ TC = 100°C
IFSM
IFRM
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
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Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max
Units
600
4.0
25
16
25
10
V
- 55 to +150
A
W
C
1
10/18/04
HFA08TA60CPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
VBR
Cathode Anode Breakdown Voltage
VFM
Max Forward Voltage
IRM
Max Reverse Leakage Current
CT
Junction Capacitance
LS
Series Inductance
Min Typ Max Units
600
V
1.5
1.8
1.8
2.2
1.4
0.17
44
4.0
1.7
3.0
300
8.0
V
µA
pF
8.0
nH
Test Conditions
IR = 100µA
IF = 4.0A
IF = 8.0A
See Fig. 1
IF = 4.0A, TJ = 125°C
See Fig. 2
VR = VR Rated
TJ = 125°C, VR = 0.8 x VR RatedD Rated
VR = 200V
See Fig. 3
Measured lead to lead 5mm from
package body
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
trr
trr1
trr2
IRRM1
IRRM2
Qrr1
Qrr2
di(rec)M/dt1
di(rec)M/dt2
Min Typ Max Units
Reverse Recovery Time
See Fig. 5, 6 & 16
Peak Recovery Current
See Fig. 7& 8
Reverse Recovery Charge
See Fig. 9 & 10
Peak Rate of Fall of Recovery Current
During tb
See Fig. 11 & 12
17
28
38
2.9
3.7
40
70
280
235
42
57
5.2
6.7
60
105
ns
A
nC
A/µs
Test Conditions
IF = 1.0A, dif/dt = 200A/µs, VR = 30V
TJ = 25°C
TJ = 125°C
IF = 4.0A
TJ = 25°C
TJ = 125°C
VR = 200V
TJ = 25°C
TJ = 125°C
di f/dt = 200A/µs
TJ = 25°C
TJ = 125°C
Thermal - Mechanical Characteristics
Parameter
Tlead
RthJC
RthJA ‚
RthCSƒ
Lead Temperature
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Case to Heat Sink
Wt
Weight
T
Mounting Torque

‚
ƒ
2
Min
Typ
Max
Units
300
5.0
80
°C
K/W
12
10
g
(oz)
Kg-cm
lbf•in
0.5
2.0
0.07
6.0
5.0
0.063 in. from Case (1.6mm) for 10 sec
Typical Socket Mount
Mounting Surface, Flat, Smooth and Greased
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HFA08TA60CPbF
1000
Reverse Current - IR (µA)
TJ = 150°C
10
TJ = 125°C
T = 25°C
TJ = 150°C
100
10
TJ = 125°C
1
0.1
TJ = 25°C
0.01
0.001
J
0
100
200
300
400
500
Reverse Voltage - V R (V)
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage
1
100
0.1
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Forward Voltage
Voltage Drop
Forward
Drop -- V
VFMFM
((V)
V)
Fig. 1 - Maximum Forward Voltage Drop
vs. Instantaneous Forward Current,
Junction Capacitance -CT (pF)
Instantaneous Forward Current - IF (A)
100
A
TJ = 25°C
10
1
1
10
100
1000
Reverse Voltage - V R (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Thermal Response (Z thJC )
10
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
PDM
0.1
0.01
0.00001
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics
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3
HFA08TA60CPbF
50
14
I F = 8.0A
45
12
I F = 4.0A
VR = 200V
TJ = 125°C
TJ = 25°C
I F = 8.0A
10
I F = 4.0A
Irr- ( A)
trr- (nC)
40
35
8
6
30
4
25
2
VR = 200V
TJ = 125°C
TJ = 25°C
20
100
di f /dt - (A/µs)
0
100
1000
1000
di f /dt - (A/µs)
Fig. 6 - Typical Recovery Current vs. di f/dt
Fig. 5 - Typical Reverse Recovery vs. dif /dt
1000
200
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
160
I F = 8.0A
I F = 4.0A
Qrr- (nC)
120
di (rec) M/dt- (A /µs)
IF = 8.0A
80
I F = 4.0A
40
0
100
di f /dt - (A/µs)
Fig. 7 - Typical Stored Charge vs. dif /dt
4
1000
A
100
100
1000
di f /dt - (A/µs)
Fig. 8 - Typical di(rec)M/dt vs. dif /dt,
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HFA08TA60CPbF
3
trr
IF
REVERSE RECOVERY CIRCUIT
tb
ta
0
Q rr
VR = 200V
2
I RRM
4
0.5 I RRM
di(rec)M/dt
0.01 Ω
L = 70µH
D.U.T.
D
dif/dt
ADJUST G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test
Circuit
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5
0.75 IRRM
1
di f /dt
1. dif/dt - Rate of change of current
through zero crossing
2. IRRM - Peak reverse recovery current
4. Qrr - Area under curve defined by t rr
and IRRM
trr X IRRM
Qrr =
2
3. trr - Reverse recovery time measured
5. di(rec)M/dt - Peak rate of change of
from zero crossing point of negative
current during tb portion of trr
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
Fig. 10 - Reverse Recovery Waveform and
Definitions
5
HFA08TA60CPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
PART NUMBER
EXAMPLE: THIS IS A HFA16TA60C
LOT CODE 1789
ASS EMBLED ON WW 19, 2001
IN THE ASSE MBLY LINE "C"
INTERNAT IONAL
RECTIFIER
LOGO
DATE CODE
ASSE MBLY
LOT CODE
Note: "P" in the beginning of date
code indicates "Lead-F ree"
P = LEAD-F REE
YEAR 1 = 2001
WE EK 19
LINE C
PART NUMBER
EXAMPLE: THIS IS A HFA16TA60C
LOT CODE 1789
AS SEMBLED ON WW 19, 2001
Note: "P" in ass embly line position
indicates "Lead-F ree"
INTERNATIONAL
RECTIF IER
LOGO
ASSEMBLY
LOT CODE
DATE CODE
YEAR 1 = 2001
WEE K 19
P = LEAD-F REE
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 10/04
6
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