4M × 4-Bit Dynamic RAM 2k & 4k Refresh (Fast Page Mode) HYB 5116400BJ-50/-60 HYB 5117400BJ-50/-60 HYB 3116400BJ/BT-50/-60 HYB 3117400BJ-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation • Performance: -50 -60 tRAC RAS access time 50 60 ns tCAC CAS access time 13 15 ns tAA Access time from address 25 30 ns tRC Read/Write cycle time 84 104 ns tPC Fast page mode cycle time 35 40 ns • Power Dissipation, Refresh & Addressing: HYB 5116400 -50 Power Supply Addressing -50 -60 HYB 5117400 -50 -60 HYB 3117400 -50 -60 5 V ± 10% 3.3 V ± 0.3 V 5 V ± 10% 3.3 V ± 0.3 V 12/10 12/10 11/11 11/11 Refresh Active -60 HYB 3116400 4096 cycles / 64 ms 275 220 180 2048 cycles / 32 ms 144 440 385 288 252 mW TTL Standby 11 7.2 11 7.2 mW CMOS Standby 5.5 3.6 5.5 3.6 mW • Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh and test mode • All inputs, outputs and clocks fully TTL (5 V versions) and LV-TTL (3.3 V version)-compatible • Plastic Package: P-SOJ-26/24-1 300 mil P-TSOPII-26/24-1 300 mil Semiconductor Group 1 1998-10-01 HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/-60 4M × 4 DRAM The HYB 5(3)116(7)400 are 16 MBit dynamic RAMs based on die revisions “G” & “F” and organized as 4 194 304 words by 4-bits. The HYB 5(3)116(7)400BJ/BT utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide operating margins, both internally and for the system user. Multiplexed address inputs permit the HYB 5(3)116(7)400 to be packaged in a standard SOJ-26/24 and TSOPII-26/24 plastic package with 300 mil width. These packages provide high system bit densities and are compatible with commonly used automatic testing and insertion equipment. Ordering Information Type Ordering Code Package Descriptions HYB 5117400BJ-50 Q67100-Q1086 P-SOJ-26/24-1 300 mil 5 V 50 ns FPM-DRAM HYB 5117400BJ-60 Q67100-Q1087 P-SOJ-26/24-1 300 mil 5 V 60 ns FPM-DRAM HYB 3117400BJ-50 on request P-SOJ-26/24-1 300 mil 3.3 V 50 ns FPM-DRAM HYB 3117400BJ-60 on request P-SOJ-26/24-1 300 mil 3.3 V 60 ns FPM-DRAM HYB 5116400BJ-50 Q67100-Q1049 P-SOJ-26/24-1 300 mil 5 V 50 ns FPM-DRAM HYB 5116400BJ-60 Q67100-Q1050 P-SOJ-26/24-1 300 mil 5 V 60 ns FPM-DRAM HYB 3116400BJ-50 on request P-SOJ-26/24-1 300 mil 3.3 V 50 ns FPM-DRAM HYB 3116400BJ-60 on request P-SOJ-26/24-1 300 mil 3.3 V 60 ns FPM-DRAM HYB 3116400BT-50 on request P-TSOPII-26/24-1 300 mil 3.3 V 50 ns FPM-DRAM HYB 3116400BT-60 on request P-TSOPII-26/24-1 300 mil 3.3 V 60 ns FPM-DRAM 2k-Refresh Versions 4k-Refresh Versions Semiconductor Group 2 1998-10-01 HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/-60 4M × 4 DRAM Pin Names HYB 5(3)116400 4k-Refresh HYB 5(3)117400 2k-Refresh Row Address Inputs A0 - A11 A0 - A10 Column Address Inputs A0 - A9 A0 - A10 Row Address Strobe RAS Column Address Strobe CAS Output Enable OE Data Input/Output I/O1 - I/O4 Read/Write Input WE Power Supply VCC Ground (0 V) VSS Not Connected – N.C. Pin Configuration P-SOJ-26/24-1 300 mil P-TSOPII-26/24-1 300 mil VCC I/O1 I/O2 WE RAS A11 / N.C. A10 A0 A1 A2 A3 VCC 1 2 3 4 5 6 26 25 24 23 22 21 VSS I/O4 I/O3 CAS OE A9 8 9 10 11 12 13 19 18 17 16 15 14 A8 A7 A6 A5 A4 VSS SPP03454 Semiconductor Group 3 1998-10-01 HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/-60 4M × 4 DRAM I/O1 I/O2 I/O3 I/O4 Data IN Buffer Data OUT Buffer OE & WE 4 CAS 4 No.2 Clock Generator 10 A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 Column Address Buffers (10) 10 Column Decoder Refresh Controller Sense Amplifier I/O Gating Refresh Counter (12) 4 1024 x4 12 12 RAS Row Address Buffers (12) 12 Row Decoder 4096 Memory Array 4096 x 1024 x 4 No.1 Clock Generator Voltage Down Generator VCC VCC (internal) SPB03455 Block Diagram for HYB 5(3)116400 (4k-refresh) Semiconductor Group 4 1998-10-01 HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/-60 4M × 4 DRAM I/O1 I/O2 I/O3 I/O4 Data In Buffer OE 4 & WE Data Out Buffer 4 CAS No.2 Clock Generator 11 A0 Column Address Buffers (11) 11 Column Decoder A1 A2 Refresh Controller A3 Sense Amplifier I/O Gating A4 4 A5 A6 11 A9 A10 . .. A8 2048 x4 . .. Refresh Counter (11) A7 11 RAS Row Address Buffers (11) 11 Row Decoder .. . 2048 .. . Memory Array 2048 x 2048 x 4 No.1 Clock Generator Voltage Down Generator V CC V CC (internal) SPB02823 Block Diagram for HYB 5(3)117400 (2k-refresh) Semiconductor Group 5 1998-10-01 HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/-60 4M × 4 DRAM Absolute Maximum Ratings Operating temperature range ........................................................................................... 0 to 70 °C Storage temperature range........................................................................................ – 55 to 150 °C Input/output voltage (5 V versions) ................................................... – 0.5 to min (VCC + 0.5, 7.0) V Input/output voltage (3.3 V versions) ................................................ – 0.5 to min (VCC + 0.5, 4.6) V Power supply voltage (5 V versions) ....................................................................... – 1.0 V to 7.0 V Power supply voltage (3.3 V versions) .................................................................... – 1.0 V to 4.6 V Power dissipation( 5 V versions) ............................................................................................. 1.0 W Power dissipation (3.3 V versions) .......................................................................................... 0.5 W Data out current (short circuit) ................................................................................................ 50 mA Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage of the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. DC Characteristics TA = 0 to 70 °C, VSS = 0 V, tT = 2 ns Parameter Symbol Limit Values min. max. Unit Test Condition V 5 V Versions Power supply voltage VCC 4.5 5.5 Input high voltage VIH 2.4 VCC + 0.5 V 1 Input low voltage VIL – 0.5 0.8 V 1 Output high voltage (IOUT = – 5 mA) VOH 2.4 – V 1 Output low voltage (IOUT = 4.2 mA) VOL – 0.4 V 1 Power supply voltage VCC 3.0 3.6 V Input high voltage VIH 2.0 VCC + 0.5 V 1 Input low voltage VIL – 0.5 0.8 V 1 TTL Output high voltage (IOUT = – 2 mA) VOH 2.4 – V 1 TTL Output low voltage (IOUT = 2 mA) VOL – 0.4 V 1 CMOS Output high voltage (IOUT = – 100 µA) VOH VCC – 0.2 – V CMOS Output low voltage (IOUT = 100 µA) VOL – V Semiconductor Group 6 3.3 V Versions 0.2 1998-10-01 HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/-60 4M × 4 DRAM DC Characteristics (cont’d) TA = 0 to 70 °C, VSS = 0 V, tT = 2 ns Parameter Symbol Limit Values min. Unit Notes max. 2k 4k Common Parameters Input leakage current (0 V ≤ VIH ≤ VCC + 0.3 V, all other pins = 0 V) II(L) – 10 10 µA 1 Output leakage current (DO is disabled, 0 V ≤ VOUT ≤ VCC + 0.3 V) IO(L) – 10 10 µA 1 Average VCC supply current ICC1 -50 ns version -60 ns version (RAS, CAS, address cycling: tRC = tRC MIN.) Standby VCC supply current (RAS = CAS = VIH) – – 80 70 50 mA 40 mA 2, 3, 4 2, 3, 4 ICC2 – Average VCC supply current, during RAS-only refresh ICC3 cycles -50 ns version -60 ns version (RAS cycling, CAS = VIH, tRC = tRC MIN.) – – Average VCC supply current,during fast page mode -50 ns version -60 ns version (RAS = VIL, CAS, address cycling: tPC = tPC MIN.) ICC4 – – 25 20 mA mA 2, 3, 4 Standby VCC supply current (RAS = CAS = VCC – 0.2 V) ICC5 – 1 mA 1 Average VCC supply current, during CAS-before-RAS ICC6 refresh mode -50 ns version -60 ns version (RAS, CAS cycling: tRC = tRC MIN.) – – Semiconductor Group 7 2 80 70 80 70 mA 50 mA 40 mA 50 mA 40 mA – 2, 4 2, 4 2, 3, 4 2, 4 2, 4 1998-10-01 HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/-60 4M × 4 DRAM Capacitance TA = 0 to 70 °C, f = 1 MHz Parameter Symbol Limit Values min. max. Unit Input capacitance (A0 to A11) CI1 – 5 pF Input capacitance (RAS, CAS, WE, OE) CI2 – 7 pF I/O capacitance (I/O1 - I/O4) CIO – 7 pF AC Characteristics 5, 6 TA = 0 to 70 °C, VCC = 5 V ± 10 % / VCC = 3.3 V ± 0.3 V, tT = 5 ns Parameter Symbol Limit Values -50 Unit Note -60 min. max. min. max. Common Parameters Random read or write cycle time tRC 90 – 110 – ns RAS precharge time tRP 30 – 40 – ns RAS pulse width tRAS 50 10k 60 10k ns CAS pulse width tCAS 13 10k 15 10k ns Row address setup time tASR 0 – 0 – ns Row address hold time tRAH 8 – 10 – ns Column address setup time tASC 0 – 0 – ns Column address hold time tCAH 10 – 15 – ns RAS to CAS delay time tRCD 18 37 20 45 RAS to column address delay time tRAD 13 25 15 30 ns RAS hold time tRSH 13 15 – ns CAS hold time tCSH 50 60 – ns CAS to RAS precharge time tCRP 5 – 5 – ns Transition time (rise and fall) tT 3 50 3 50 ns Refresh period for 2k refresh version tREF – 32 – 32 ms Refresh period for 4k refresh version tREF – 64 – 64 ms Access time from RAS tRAC – 50 – 60 ns 8, 9 Access time from CAS tCAC – 13 – 15 ns 8, 9 Access time from column address tAA – 25 – 30 ns 8, 10 7 Read Cycle Semiconductor Group 8 1998-10-01 HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/-60 4M × 4 DRAM AC Characteristics (cont’d) 5, 6 TA = 0 to 70 °C, VCC = 5 V ± 10 % / VCC = 3.3 V ± 0.3 V, tT = 5 ns Parameter Symbol Limit Values -50 Unit Note -60 min. max. min. max. OE access time tOEA – 13 – 15 ns Column address to RAS lead time tRAL 25 – 30 – ns Read command setup time tRCS 0 – 0 – ns Read command hold time tRCH 0 – 0 – ns 11 Read command hold time referenced to RAS tRRH 0 – 0 – ns 11 CAS to output in low-Z tCLZ 0 – 0 – ns 8 Output buffer turn-off delay tOFF 0 13 0 15 ns 12 Output buffer turn-off delay from OE tOEZ 0 13 0 15 ns 12 Data to OE low delay tDZO 0 – 0 – ns 13 CAS high to data delay tCDD 13 – 15 – ns 14 OE high to data delay tODD 13 – 15 – ns 14 Write command hold time tWCH 8 – 10 – ns Write command pulse width tWP 8 – 10 – ns Write command setup time tWCS 0 – 0 – ns Write command to RAS lead time tRWL 13 – 15 – ns Write command to CAS lead time tCWL 13 – 15 – ns Data setup time tDS 0 – 0 – ns 16 Data hold time tDH 10 – 10 – ns 16 Data to CAS low delay tDZC 0 – 0 – ns 13 Read-write cycle time tRWC 126 – 150 – ns RAS to WE delay time tRWD 68 – 80 – ns 15 CAS to WE delay time tCWD 31 – 35 – ns 15 Column address to WE delay time tAWD 43 – 50 – ns 15 OE command hold time tOEH 13 – 15 – ns Write Cycle 15 Read-Modify-Write Cycle Semiconductor Group 9 1998-10-01 HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/-60 4M × 4 DRAM AC Characteristics (cont’d) 5, 6 TA = 0 to 70 °C, VCC = 5 V ± 10 % / VCC = 3.3 V ± 0.3 V, tT = 5 ns Parameter Symbol Limit Values -50 Unit Note -60 min. max. min. max. Fast Page Mode Cycle Fast page mode cycle time tPC 35 – 40 – ns CAS precharge time tCP 10 – 10 – ns Access time from CAS precharge tCPA – 30 – 35 ns RAS pulse width tRAS 50 200k 60 200k ns CAS precharge to RAS Delay tRHPC 30 – 35 – ns Fast page mode read-write cycle time tPRWC 71 – 80 – ns CAS precharge to WE tCPWD 48 – 55 – ns CAS setup time tCSR 10 – 10 – ns CAS hold time tCHR 10 – 10 – ns RAS to CAS precharge time tRPC 5 – 5 – ns Write to RAS precharge time tWRP 10 – 10 – ns Write hold time referenced to RAS tWRH 10 – 10 – ns tCPT 35 – 40 – ns CAS hold time tCHRT 30 – 30 – ns Write command setup time tWTS 10 – 10 – ns Write command hold time tWTH 10 – 10 – ns RAS hold time in test mode tRAHT 30 – 30 – ns Semiconductor Group 10 7 Fast Page Mode Read-Modify-Write Cycle CAS-before-RAS Refresh Cycle CAS-before-RAS Counter Test Cycle CAS precharge time Test Mode 1998-10-01 HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/-60 4M × 4 DRAM Notes All voltages are referenced to VSS. ICC1, ICC3, ICC4 and ICC6 depend on cycle rate. ICC1 and ICC4 depend on output loading. Specified values are measured with the output open. Address can be changed once or less while RAS = VIL. In the case of ICC4 it can be changed once or less during a fast page mode cycle (tPC). 5. An initial pause of 200 µs is required after power-up followed by 8 RAS cycles of which at least one cycle has to be a refresh cycle, before proper device operation is achieved. In case of using internal refresh counter, a minimum of 8 CAS-before-RAS initialization cycles instead of 8 RAS cycles are required. 6. AC measurements assume tT = 5 ns. 7. VIH (MIN.) and VIL (MAX.) are reference levels for measuring timing of input signals. Transition times are also measured between VIH and VIL. 8. Measured with a load equivalent to 2 TTL loads and 100 pF. 9. Operation within the tRCD (MAX.) limit ensures that tRAC (MAX.) can be met. tRCD (MAX.) is specified as a reference point only: If tRCD is greater than the specified tRCD (MAX.) limit, then access time is controlled by tCAC. 10.Operation within the tRAD (MAX.) limit ensures that tRAC (MAX.) can be met. tRAD (MAX.) is specified as a reference point only: If tRAD is greater than the specified tRAD (MAX.) limit, then access time is controlled by tAA. 11.Either tRCH or tRRH must be satisfied for a read cycle. 12.tOFF (MAX.) and tOEZ (MAX.) define the time at which the outputs achieve the open-circuit condition and are not referenced to output voltage levels. 13.Either tDZC or tDZO must be satisfied. 14.Either tCDD or tODD must be satisfied. 15.tWCS, tRWD, tCWD, tAWD and tCPWD are not restrictive operating parameters. They are included in the data sheet as electrical characteristics only. If tWCS > tWCS (MIN.), the cycle is an early write cycle and the I/O pin will remain open-circuit (high impedance) through the entire cycle; if tRWD > tRWD (MIN.), tCWD > tCWD (MIN.), tAWD > tAWD (MIN.) and tCPWD > tCPWD (MIN.), the cycle is a readwrite cycle and I/O pins will contain data read from the selected cells. If neither of the above sets of conditions is satisfied, the condition of the I/O pins (at access time) is indeterminate. 16.These parameters are referenced to the CAS leading edge in early write cycles and to the WE leading edge in read-write cycles. 1. 2. 3. 4. Semiconductor Group 11 1998-10-01 HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/-60 4M × 4 DRAM t RC t RAS t RP VIH RAS VIL t CSH t RCD t RSH t CAS VIH t CRP CAS VIL t RAD t ASR t RAL t CAH t ASC t ASR VIH Address Row VIL Column Row t RAH t RCH t RRH t RCS VIH WE VIL t AA t OEA VIH OE VIL t DZC t CDD t DZO I/O (Inputs) t ODD VIH VIL t OFF t CAC t CLZ VOH Hi Z I/O (Outputs) V OL t OEZ Valid Data OUT Hi Z t RAC "H" or "L" SPT03025 Read Cycle Semiconductor Group 12 1998-10-01 HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/-60 4M × 4 DRAM t RC t RAS t RP VIH RAS VIL t CSH t RCD t RSH t CRP t CAS VIH CAS VIL t RAL t RAD t ASR t ASC t CAH t ASR VIH Address Row VIL Column t RAH t CWL t WCS VIH Row t WP WE VIL t WCH t RWL VIH OE VIL t DS I/O (Inputs) t DH VIH Valid Data IN VIL VOH I/O (Outputs) V OL Hi Z "H" or "L" SPT03026 Write Cycle (Early Write) Semiconductor Group 13 1998-10-01 HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/-60 4M × 4 DRAM t RC t RAS t RP VIH RAS VIL t CSH t RCD t RSH t CAS VIH t CRP CAS VIL t RAD t RAL t CAH t ASC t ASR t ASR VIH Address Row VIL Column Row t RAH t CWL t RWL t WP VIH WE VIL t OEH VIH OE VIL t ODD t DZO t DZC I/O (Inputs) t DH t DS VIH Valid Data VIL t CLZ t OEZ t OEA VOH I/O (Outputs) V OL Hi Z Hi Z "H" or "L" SPT03027 Write Cycle (OE Controlled Write) Semiconductor Group 14 1998-10-01 HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/-60 4M × 4 DRAM t RWC t RAS VIH RAS VIL t CSH t RP t RSH t CAS t RCD t CRP VIH CAS VIL t RAH t ASR t CAH t ASC t ASR VIH Address Row Column Row VIL t RAD t CWL t AWD t CWD t RWL t RWD t WP VIH WE VIL t AA t RCS t OEA t OEH VIH OE VIL t DZC t DS t DZO I/O (Inputs) t DH VIH Valid Data IN VIL t ODD t CAC t OEZ t CLZ VOH I/O (Outputs) V OL Data OUT t RAC "H" or "L" SPT03028 Read-Write (Read-Modify-Write) Cycle Semiconductor Group 15 1998-10-01 HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/-60 4M × 4 DRAM t RASP VIH RAS VIL t PC t RCD t RP t CRP t RHCP t CAS t RSH t CAS t CAS t CP VIH CAS VIL t RAH t ASR t ASC t CSH t CAH t ASC t CAH t CAH t ASR t ASC VIH Address Row Column Column VIL Column Row t RCH t RCH t RAD t RCS t RCS t RCS t RRH VIH WE VIL t CPA t AA t AA t OEA t CPA t AA t OEA t OEA VIH OE VIL t DZC t DZC t DZC t DZO t DZO t ODD I/O (Inputs) t CDD t DZO t ODD t ODD VIH VIL t OFF t OFF t OEZ t OFF t OEZ t OEZ t RAC t CAC t CLZ VOH I/O (Outputs) V OL t CAC t CLZ Valid Data OUT t CAC t CLZ Valid Data OUT Valid Data OUT "H" or "L" SPT03029 Fast Page Mode Read Cycle Semiconductor Group 16 1998-10-01 HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/-60 4M × 4 DRAM t RASP VIH RAS VIL t PC t RP t CAS t RCD t RSH t CAS t CAS t CP t CRP VIH CAS VIL t RAH t ASR t ASC t CAH t ASC t RAL t CAH t CAH t ASC t ASR VIH Address Row Column Column Column Row VIL t RAD t WCS t CWL t CWL t WCS t WCH t WCS t WCH t WP t RWL t CWL t WCH t WP t WP VIH WE VIL VIH OE VIL t DS I/O (Inputs) VIH t DH Valid Data IN VIL t DH t DS Valid Data IN VOH I/O (Outputs) V OL t DS t DH Valid Data IN Hi Z "H" or "L" SPT03030 Fast Page Mode Early Write Cycle Semiconductor Group 17 1998-10-01 HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/-60 4M × 4 DRAM t RAS VIH RAS VIL t CSH t RP t CP t RCD t PRWC t CAS t RSH t CAS t CAS t CRP VIH CAS VIL t ASR t RAD t RAH t ASC t RAL t CAH t CAH t CAH t ASC t ASC t ASR VIH Address Row Column Column Column Row VIL t RWD t CWD t RCS t CPWD t CWD t CWL t CPWD t CWD t CWL t RWL t CWL VIH WE VIL t AWD t AA t AWD t WP t OEA t AWD t WP t OEA t WP t OEA t OEH t OEH t OEH VIH OE VIL t CLZ t DZC t CLZ t ODD t CLZ t CPA t ODD t DZC t DZO VIH I/O (Inputs) V IL Data IN t CAC t RAC VOH I/O (Outputs) V t OEZ t CPA t ODD Data IN t DH t DS t DZC Data IN t DH t AA t DS t OEZ Data OUT Data OUT t DH t CAC t DS t AA t OEZ Data OUT OL "H" or "L" SPT03031 Fast Page Mode Late Write and Read-Modify Write Cycle Semiconductor Group 18 1998-10-01 HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/-60 4M × 4 DRAM t RC t RAS t RP VIH RAS VIL t CRP t RPC VIH CAS VIL t RAH t ASR t ASR VIH Row Address Row VIL VOH I/O (Outputs) V OL Hi Z "H" or "L" SPT03032 RAS-only Refresh Cycle Semiconductor Group 19 1998-10-01 HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/-60 4M × 4 DRAM t RC t RP t RAS t RP VIH RAS VIL t RPC t CP t CHR t RPC t CSR t CRP VIH CAS VIL t WRH t WRP VIH WE VIL VIH OE VIL t ODD I/O (Inputs) VIH VIL t CDD t OEZ VOH Hi Z I/O (Outputs) V OL t OFF "H" or "L" SPT03033 CAS-before-RAS Refresh Cycle Semiconductor Group 20 1998-10-01 HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/-60 4M × 4 DRAM t RC t RC t RP t RP t RAS t RAS VIH RAS VIL t RCD t RSH t CHR t CRP VIH CAS VIL t RAD t ASC t WRP t RAH t ASR t WRH t CAH t ASR VIH Address Row VIL Column Row t RCS t RRH VIH WE VIL t AA t OEA VIH OE VIL t DZC t CDD t DZO I/O (Inputs) t ODD VIH VIL t CLZ t CAC t OFF t RAC t OEZ VOH I/O (Outputs) V OL Valid Data OUT "H" or "L" Hi Z SPT03034 Hidden Refresh Cycle (Read) Cycle Semiconductor Group 21 1998-10-01 HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/-60 4M × 4 DRAM t RC t RC t RAS t RP t RAS t RP VIH RAS VIL t RCD t RSH t CHR t CRP VIH CAS VIL t RAD t ASC t RAH t ASR t ASR t CAH VIH Address Row VIL Column Row t WCS t WCH t WP t WRH t WRP VIH WE VIL t DS t DH I/O (Input) VIN Valid Data VIL VOH I/O (Output) V OL Hi Z "H" or "L" SPT03035 Hidden Refresh Early Write Cycle Semiconductor Group 22 1998-10-01 HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/-60 4M × 4 DRAM Read Cycle t RAS t RP VIH RAS VIL t CHR t CSR t RSH t CP VIH t CAS CAS VIL t RAL t CAH t ASR t ASC VIH Address Column VIL t WRP Row t AA t RRH VIH WE VIL t WRH t CAC t RCS t RCH t OEA VIH OE VIL t CDD t DZC VIH I/O (Inputs) V IL t ODD t OFF t DZO t CLZ t OEZ VOH I/O (Outputs) V Write Cycle Data OUT t WCS OL t RWL t CWL t WRP t WCH VIH WE VIL t WRH t DH VIH OE VIL t DS VIH I/O (Inputs) V IL Data IN VOH I/O (Outputs) V Hi Z OL "H" or "L" SPT03036 CAS-before-RAS Refresh Counter Test Cycle Semiconductor Group 23 1998-10-01 HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/-60 4M × 4 DRAM t RC t RP t RAS t RP VIH RAS VIL t RPC t CP t RPC t CHR t CRP t CSR VIH CAS VIL t RAH t ASR VIH Address Row VIL t WTH t WTS VIH WE VIL VIH OE VIL t ODD I/O (Inputs) VIH Hi Z VIL t CDD t OEZ VOH I/O (Outputs) V OL Hi Z t OFF "H" or "L" SPT03042 Test Mode Entry Semiconductor Group 24 1998-10-01 HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/-60 4M × 4 DRAM Package Outlines 0.85 max 1.27 0.51-0.1 0.18 M 24x 15.24 26 21 19 14 1 6 8 13 17.27-0.251) 0.1 0.25 A 6.8 ±0.2 8.63 -0.25 0.25 B 0.18 M B A Index Marking 1) Does not include plastic or metal protrusions of 0.15 max per side Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. SMD = Surface Mounted Device Semiconductor Group 7.75 -0.25 B 25 GPJ05628 0.5 30˚ 1) 0.2 +0.1 0.8 min 2.64 ±0.1 3.75 -0.5 Plastic Package P-SOJ-26/24-1 (SMD) (300mil) (Plastic small outline J-leaded) Dimensions in mm 1998-10-01 HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/-60 4M × 4 DRAM 0.6 -0.2 0.4 +0.12 -0.1 9.22 ±0.2 26 1 2119 5˚ max 3 7.62 ±0.13 1.27 0.2 M 24x 0.15 +0.06 -0.0 1.2 max 1 ±0.05 0.1 ±0.05 Plastic Package P-TSOPII-26/24-1 (400 mil) (SMD) (Plastic Thin Small Outline Package (Type II)) 0.1 14 6 8 13 17.14 ±0.13 1) GPX05857 Index Marking 1) Does not include plastic or metal protrusion of 0.15 max per side Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. SMD = Surface Mounted Device Semiconductor Group 26 Dimensions in mm 1998-10-01