PD - 9.1692A
IRL3302S
PRELIMINARY
HEXFET® Power MOSFET
l
l
l
l
l
Advanced Process Technology
Surface Mount
Optimized for 4.5V-7.0V Gate Drive
Ideal for CPU Core DC-DC Converters
Fast Switching
D
VDSS = 20V
RDS(on) = 0.020W
G
ID = 39A
S
Description
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters. Advanced processing techniques
combined with an optimized gate oxide design results
in a die sized specifically to offer maximum efficiency
at minimum cost.
The D2Pak is a surface mount power package capable
of accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
D2Pak is suitable for high current applications because
of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount
application.
D 2 P ak
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
Units
39
25
160
57
0.45
± 10
130
23
5.7
5.0
-55 to + 150
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
RqJC
RqJA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
Max.
Units
–––
–––
2.2
40
°C/W
9/17/97
IRL3302S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
Min.
20
–––
–––
–––
0.70
21
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LS
Internal Source Inductance
–––
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
IGSS
Typ.
–––
0.022
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.2
110
41
89
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.023
VGS = 4.5V, ID = 23A
W
0.020
VGS = 7.0V, ID = 23A
–––
V
VDS = VGS, ID = 250µA
–––
S
VDS = 10V, ID = 23A
25
VDS = 20V, VGS = 0V
µA
250
VDS = 10V, VGS = 0V, TJ = 150°C
100
VGS = 10V
nA
-100
VGS = -10V
31
ID = 23A
5.7
nC
VDS = 16V
13
VGS = 4.5V, See Fig. 6
–––
VDD = 10V
–––
ID = 23A
ns
–––
RG = 9.5W, VGS = 4.5V
–––
RD = 2.4W,
Between lead,
nH
7.5 –––
and center of die contact
1300 –––
VGS = 0V
520 –––
pF
VDS = 15V
190 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
I SM
V SD
t rr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
39
––– –––
showing the
A
G
integral reverse
––– ––– 160
S
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, IS = 23A, VGS = 0V
––– 62
94
ns
TJ = 25°C, IF = 23A
Charge ––– 110
160 nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 0.49mH
RG = 25W , IAS = 23A.
ISD £ 23A, di/dt £ 97A/µs, VDD £ V(BR)DSS,
TJ £ 150°C
Pulse width £ 300µs; duty cycle £ 2%.
Uses IRL3302 data and test conditions
** When mounted on FR-4 board using minimum recommended footprint.
For recommended footprint and soldering techniques refer to application note #AN-994.
IRL3302S
1000
1000
VGS
VGS
15V
10V
12V
8.0V
10V
6.0V
8.0V
4.0V
6.0V
4.0V
3.0V
BOTTOM3.0V
2.5V
BOTTOM 2.5V
VGS
VGS
15V
10V
12V
8.0V
10V
6.0V
8.0V
4.0V
6.0V
4.0V
3.0V
BOTTOM3.0V
2.5V
BOTTOM 2.5V
TOP
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
TOP
100
100
2.5V
2.5V
20µs PULSE WIDTH
TJ = 25 °C
10
0.1
1
10
10
0.1
100
VDS , Drain-to-Source Voltage (V)
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25 ° C
100
TJ = 150 ° C
10
V DS = 15V
20µs PULSE WIDTH
3
4
5
6
7
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
10
100
Fig 2. Typical Output Characteristics
1000
2
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1
20µs PULSE WIDTH
TJ = 150 °C
8
ID = 39A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRL3302S
VGS =
Ciss =
Crss =
Coss =
1600
Ciss
1200
800
Coss
400
Crss
15
0
1
10
ID = 23A
VDS = 16V
12
9
6
3
0
100
0
VDS , Drain-to-Source Voltage (V)
10
20
30
40
50
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
C, Capacitance (pF)
2000
0V,
f = 1MHz
Cgs + Cgd , Cds SHORTED
Cgd
Cds + Cgd
VGS , Gate-to-Source Voltage (V)
2400
100
10us
100
TJ = 150 ° C
10
100us
1ms
10
TJ = 25 ° C
1
0.5
10ms
V GS = 0 V
1.0
1.5
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
2.0
TC = 25 ° C
TJ = 150 ° C
Single Pulse
1
1
10
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
100
IRL3302S
40
EAS , Single Pulse Avalanche Energy (mJ)
300
I D , Drain Current (A)
30
20
10
0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
TOP
250
BOTTOM
ID
10A
15A
23A
200
150
100
50
0
25
50
75
100
125
150
Starting TJ , Junction Temperature( ° C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.01
0.00001
0.02
0.01
P DM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1
0.022
VGS = 4.5V
0.021
0.020
0.019
0.018
VGS = 7.0V
0.017
0.016
0
10
20
30
40
I D , Drain Current (A)
Fig 12. On-Resistance Vs. Drain Current
R DS (on) , Drain-to-Source On Resistance (W)
R DS (on) , Drain-to-Source On Resistance(W)
IRL3302S
0.020
0.019
0.018
ID = 39A
0.017
0.016
0.015
0.014
4
5
6
7
8
9
VGS , Gate-to-Source Voltage (V)
Fig 13. On-Resistance Vs. Gate Voltage
10
IRL3302S
D2Pak Package Outline
10.54 (.415)
10.29 (.405)
1.40 (.055)
M A X.
-A-
1.32 (.052)
1.22 (.048)
2
1.78 (.070)
1.27 (.050)
1
10.16 (.400)
REF.
-B-
4.69 (.185)
4.20 (.165)
6.47 (.255)
6.18 (.243)
3
15.49 (.610)
14.73 (.580)
2.79 (.110)
2.29 (.090)
2.61 (.103)
2.32 (.091)
5.28 (.208)
4.78 (.188)
3X
1.40 (.055)
1.14 (.045)
5.08 (.200 )
0.55 (.022)
0.46 (.018)
0.93 (.037)
3X
0.69 (.027)
0.25 (.010)
M
8.89 (.350)
REF.
1 .39 (.055)
1 .14 (.045)
B A M
M IN IM U M R E C O M M E N D E D F O O TP R IN T
11.43 (.4 50)
N O TE S :
1 D IM E N S IO N S A F T E R S O LD E R D IP .
2 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982.
3 C O N T R O LLIN G D IM E N S IO N : IN C H .
4 H E A TS IN K & LE A D D IM E N S IO N S D O N O T IN C LU D E B U R R S .
LE A D A S S IG N M E N TS
1 - G A TE
2 - D R A IN
3 - SOURCE
8.89 (.350)
17.78 (.700)
3.81 (.150)
2.08 (.082)
2X
Part Marking Information
D2Pak
IN TE R N A T IO N A L
R E C TIF IE R
LOGO
ASSEMBLY
LOT CODE
A
PART NUMBER
F530S
9246
9B
1M
D A TE C O D E
(Y Y W W )
YY = YEAR
W W = W EEK
2.54 (.100)
2X
IRL3302S
Tape & Reel Information
D2Pak
TR R
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
4 .1 0 (.1 6 1 )
3 .9 0 (.1 5 3 )
F E E D D IR E C TIO N 1 .8 5 (.0 7 3 )
1 .6 5 (.0 6 5 )
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
1 1 .6 0 (.4 5 7 )
1 1 .4 0 (.4 4 9 )
0 .3 6 8 (.0 1 4 5 )
0 .3 4 2 (.0 1 3 5 )
1 5 .4 2 (.6 0 9 )
1 5 .2 2 (.6 0 1 )
2 4 .3 0 (.9 5 7 )
2 3 .9 0 (.9 4 1 )
TR L
1 0 .9 0 (.4 2 9 )
1 0 .7 0 (.4 2 1 )
1 .7 5 (.0 6 9 )
1 .2 5 (.0 4 9 )
4 .7 2 (.1 3 6 )
4 .5 2 (.1 7 8 )
1 6 .1 0 (.6 3 4 )
1 5 .9 0 (.6 2 6 )
F E E D D IR E C T IO N
13 .50 (.53 2 )
12 .80 (.50 4 )
2 7 .40 (1 .07 9 )
2 3 .90 (.9 41 )
4
330.00
(14.173)
M A X.
N O TES :
1. C O M F O R M S T O E IA -41 8.
2. C O N T R O LL IN G D IM E N S IO N : M IL L IM E T E R .
3. D IM E N S IO N M E A S U R E D @ H U B .
4. IN C L U D E S F L A N G E D IS T O R T IO N @ O U T E R E D G E .
6 0.0 0 (2 .3 6 2)
M IN .
26.40 (1.039)
24.40 (.961)
3
3 0 .4 0 (1 .1 9 7)
MAX.
4
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
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IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
9/97