IRF SI3443DV

PD- 93795B
Si3443DV
HEXFET® Power MOSFET
l
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
-2.5V Rated
D
A
D
1
6
2
5
3
4
VDSS = -20V
D
G
D
S
RDS(on) = 0.065Ω
Top View
Description
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The TSOP-6 package with its customized leadframe
produces a HEXFET® power MOSFET with RDS(on) 60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. It's unique thermal design and RDS(on) reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23.
TSOP-6
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
EAS
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-20
-4.4
-3.5
-20
2.0
1.3
0.016
31
± 12
-55 to + 150
V
W/°C
mJ
V
°C
Max.
Units
62.5
°C/W
A
W
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambientƒ
1
01/13/03
Si3443DV
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V(BR)DSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Min.
-20
–––
–––
–––
–––
-0.60
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
VGS = 0V, ID = -250µA
-0.005 ––– V/°C Reference to 25°C, ID = -1mA
0.034 0.065
VGS = -4.5V, I D = -4.4A ‚
0.053 0.090
Ω
VGS = -2.7V, I D = -3.7A ‚
0.060 0.100
VGS = -2.5V, I D = -3.5A ‚
––– -1.2
V
VDS = VGS, ID = -250µA
12 –––
S
VDS = -10V, ID = -4.4 A
––– -1.0
VDS = -20V, VGS = 0V
µA
––– -5.0
VDS = -20V, VGS = 0V, TJ = 70°C
––– -100
VGS = -12V
nA
––– 100
VGS = 12V
11
15
ID = -4.4A
2.2 –––
nC
VDS = -10V
2.9 –––
VGS = -4.5V ‚
12
50
VDD = -10V, VGS = -4.5V ‚
33
60
ID = -1.0A
ns
70 100
RG = 6.0 Ω
72 100
RD = 10 Ω, ‚
1079 –––
VGS = 0V
220 –––
pF
VDS = -10V
152 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
-2.0
–––
–––
-20
–––
–––
–––
–––
51
30
-1.2
77
44
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -1.7A, VGS = 0V
TJ = 25°C, I F = -1.7A
di/dt = -100A/µs ‚
D
S
‚
Notes:
 Repetitive rating; pulse width limited by
ƒ Surface mounted on FR-4 board, t ≤ 5sec.
max. junction temperature.
‚ Pulse width ≤ 300µs; duty cycle ≤ 2%.
„ Starting TJ = 25°C, L = 6.8mH
RG = 25Ω, IAS = -3.0A.
2
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Si3443DV
100
100
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
BOTTOM -1.50V
10
1
-1.50V
20µs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
10
1
100
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
TJ = 25 ° C
TJ = 150 ° C
1
V DS = -15V
20µs PULSE WIDTH
2.5
3.0
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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1
10
100
Fig 2. Typical Output Characteristics
100
2.0
20µs PULSE WIDTH
TJ = 150 °C
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
-1.50V
0.1
0.1
-VDS , Drain-to-Source Voltage (V)
0.1
1.5
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
BOTTOM -1.50V
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
3.5
ID = -5.6A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
Si3443DV
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
1200
Ciss
800
400
Coss
Crss
0
1
10
15
-VGS , Gate-to-Source Voltage (V)
1600
ID = -4.5A
12
VDS =-10V
9
6
3
0
100
0
4
-VDS , Drain-to-Source Voltage (V)
16
20
24
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
-IID , Drain Current (A)
-ISD , Reverse Drain Current (A)
12
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
TJ = 150 ° C
TJ = 25 ° C
1
0.1
0.0
V GS = 0 V
0.4
0.8
1.2
1.6
2.0
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
8
QG , Total Gate Charge (nC)
2.4
10us
10
100us
1ms
1
10ms
TC = 25 ° C
TJ = 150 ° C
Single Pulse
0.1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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Si3443DV
EAS , Single Pulse Avalanche Energy (mJ)
5.0
-ID , Drain Current (A)
4.0
3.0
2.0
1.0
0.0
25
50
75
100
125
150
80
ID
-1.3A
-2.4A
BOTTOM -3.0A
TOP
60
40
20
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
100
Thermal Response (Z thJA )
D = 0.50
0.20
10
0.10
0.05
0.02
PDM
0.01
1
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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Si3443DV
Package Outline
TSOP-6
Part Marking Information
TSOP-6
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Si3443DV
Tape & Reel Information
TSOP-6
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 01/03
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