IRF IRF7342

PD -91859
IRF7342
HEXFET® Power MOSFET
Generation V Technology
Ultra Low On-Resistance
l Dual P-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
Description
l
l
S1
G1
S2
G2
1
8
D1
2
7
D1
3
6
4
5
VDSS = -55V
D2
D2
RDS(on) = 0.105Ω
T op V iew
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
S O -8
Absolute Maximum Ratings
Parameter
VDS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
PD @TC = 70°C
VGS
VGSM
EAS
dv/dt
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µs
Single Pulse Avalanche Energy‚
Peak Diode Recovery dv/dt ƒ
Junction and Storage Temperature Range
Max.
Units
-55
-3.4
-2.7
-27
2.0
1.3
0.016
± 20
30
114
5.0
-55 to + 150
V
A
W
W/°C
V
V
V/ns
°C
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambient…
Typ.
Max.
Units
–––
62.5
°C/W
1
2/24/99
IRF7342
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-55
–––
–––
–––
-1.0
3.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
VGS = 0V, ID = -250µA
-0.054 ––– V/°C Reference to 25°C, ID = -1mA
0.095 0.105
VGS = -10V, ID = -3.4A „
Ω
0.150 0.170
VGS = -4.5V, I D = -2.7A „
––– –––
V
VDS = VGS, ID = -250µA
––– –––
S
VDS = -10V, ID = -3.1A
––– -2.0
VDS = -55V, VGS = 0V
µA
––– -25
VDS = -55V, VGS = 0V, TJ = 55°C
––– -100
VGS = -20V
nA
––– 100
VGS = 20V
26
38
ID = -3.1A
3.0 4.5
nC
VDS = -44V
8.4
13
VGS = -10V, See Fig. 10 „
14
22
VDD = -28V
10
15
ID = -1.0A
ns
43
64
RG = 6.0Ω
22
32
RD = 16Ω, „
690 –––
VGS = 0V
210 –––
pF
VDS = -25V
86 –––
ƒ = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
-2.0
–––
–––
-27
–––
–––
–––
–––
54
85
-1.2
80
130
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -2.0A, VGS = 0V ƒ
TJ = 25°C, IF = -2.0A
di/dt = -100A/µs ƒ
D
S
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 20mH
RG = 25Ω, IAS = -3.4A. (See Figure 8)
2
ƒ ISD ≤ -3.4A, di/dt ≤ -150A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… When mounted on 1 inch square copper board, t<10 sec
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IRF7342
100
100
VGS
-15V
-12V
-10V
-8.0V
-6.0V
-4.5V
-4.0V
-3.5V
BOTTOM -3.0V
10
-3.0V
1
20µs PULSE WIDTH
TJ = 25 ° C
0.1
0.1
1
10
10
-3.0V
1
20µs PULSE WIDTH
TJ = 150 °C
0.1
0.1
100
1
10
100
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
-ISD , Reverse Drain Current (A)
100
-I D , Drain-to-Source Current (A)
VGS
-15V
-12V
-10V
-8.0V
-4.5V
-6.0V
-4.0V
-3.5V
BOTTOM -3.0V
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
TJ = 25 ° C
TJ = 150 ° C
10
V DS = -25V
20µs PULSE WIDTH
1
3
4
5
6
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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7
10
TJ = 150 ° C
TJ = 25 ° C
1
0.1
0.2
V GS = 0 V
0.4
0.6
0.8
1.0
1.2
1.4
-VSD ,Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage
3
IRF7342
ID = -3.4 A
R DS (on), Drain-to-Source On Resistance (Ω)
R DS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -10V
0
20
40
60
80 100 120 140 160
0.240
0.200
VGS = -4.5V
0.160
0.120
VGS = -10V
0.080
0
2
TJ , Junction Temperature ( °C)
0.45
8
300
EAS , Single Pulse Avalanche Energy (mJ)
RDS(on) , Drain-to-Source On Resistance ( Ω )
6
0.35
0.25
I D = -3.4 A
0.15
0.05
A
2
5
8
11
-V G S , G ate-to-S ource V oltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Voltage
10
12
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 5. Normalized On-Resistance
Vs. Temperature
4
4
-I D , Drain Current (A)
14
ID
-1.5A
-2.7A
BOTTOM -3.4A
TOP
250
200
150
100
50
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( ° C)
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
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IRF7342
1200
-VGS , Gate-to-Source Voltage (V)
960
C, Capacitance (pF)
20
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
720
480
Coss
240
Crss
0
1
10
ID = -3.1A
VDS = -48V
VDS = -30V
VDS = -12V
16
12
8
4
0
100
0
--VDS , Drain-to-Source Voltage (V)
10
20
30
40
QG , Total Gate Charge (nC)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
PDM
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7342
SO-8 Package Details
D IM
D
-B -
5
8
E
-A -
1
7
2
5
A
6
3
e
6X
θ
5
H
0.2 5 (.0 10 )
4
M
A M
θ
e1
-C-
0 .10 (.00 4)
B 8X
0 .25 (.01 0)
A1
L
8X
6
C
8X
M C A S B S
N O TE S :
1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2.
2 . C O N TRO L LIN G D IM EN SIO N : IN C H .
3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S).
4 . O U TLIN E CO N F O RM S TO JED E C O U TLINE M S -0 12 AA .
5 D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O TR US IO N S
M O LD P R O TR U SIO NS N O T TO EXCE ED 0 .2 5 (.00 6).
6 D IM E NS IO N S IS TH E LE N G TH O F L EA D FO R SO L DE R IN G TO A SU B STRA TE..
M IN
M AX
.0532
.0688
1 .35
1 .75
.0040
.0098
0 .10
0 .25
B
.014
.018
0 .36
0 .46
C
.0 075
.0 098
0 .19
0.25
D
.1 89
.1 96
4 .80
4.98
E
.150
.157
3 .81
3 .99
e1
A
M IL LIM E T E R S
MAX
A1
e
K x 45 °
IN C H E S
M IN
.050 B A S IC
1.2 7 B A S IC
.025 B A S IC
0.6 35 B A S IC
H
.2 284
.2 440
K
.011
.019
0 .28
5 .80
0 .48
6.20
L
0 .16
.050
0 .41
1.27
θ
0°
8°
0°
8°
R E CO M M E ND E D F O O TP R IN T
0 .72 (.02 8 )
8X
6 .46 ( .25 5 )
1 .78 (.07 0)
8X
1.27 ( .0 50 )
3X
Part Marking
6
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IRF7342
Tape and Reel
T E R M IN A L N U M B E R 1
1 2 .3 ( .48 4 )
1 1 .7 ( .46 1 )
8 .1 ( .31 8 )
7 .9 ( .31 2 )
F E E D D IR E C T IO N
N O TES:
1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ).
3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1.
33 0.0 0
(1 2 .9 9 2 )
M AX .
1 4 .4 0 ( .5 66 )
1 2 .4 0 ( .4 88 )
N O TE S :
1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
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Data and specifications subject to change without notice.
2/99
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7