ETC IRL3402S

PD - 9.1693
IRL3402S
PRELIMINARY
HEXFET® Power MOSFET
l
l
l
l
l
Advanced Process Technology
Surface Mount
Optimized for 4.5V-7.0V Gate Drive
Ideal for CPU Core DC-DC Converters
Fast Switching
D
VDSS = 20V
RDS(on) = 0.01Ω
G
ID = 85A†
S
Description
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters. Advanced processing techniques
combined with an optimized gate oxide design results
in a die sized specifically to offer maximum efficiency
at minimum cost.
The D2Pak is a surface mount power package capable
of accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
D2Pak is suitable for high current applications because
of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount
application.
D 2 P ak
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
VGSM
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 4.5V…
Continuous Drain Current, VGS @ 4.5V…
Pulsed Drain Current …
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage
(Start Up Transient, tp = 100µs)
Single Pulse Avalanche Energy‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
Units
85†
54
340
110
0.91
± 10
14
A
W
W/°C
V
V
290
51
11
5.0
-55 to + 150
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
Max.
Units
–––
–––
1.1
40
°C/W
10/31/97
IRL3402S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LS
Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
IGSS
Min.
20
–––
–––
–––
0.70
65
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.02
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
10
140
80
120
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA…
0.010
VGS = 4.5V, ID = 51A „
Ω
0.008
VGS = 7.0V, ID = 51A „
–––
V
VDS = VGS, I D = 250µA
–––
S
VDS = 10V, ID = 51A…
25
VDS = 20V, VGS = 0V
µA
250
VDS = 16V, VGS = 0V, T J = 150°C
100
VGS = 10V
nA
-100
VGS = -10V
78
ID = 51A
18
nC
VDS = 10V
30
VGS = 4.5V, See Fig. 6 „…
–––
VDD = 10V
–––
ID = 51A
ns
–––
RG = 5.0Ω, VGS = 4.5V
–––
RD = 0.19Ω, „…
Between lead,
nH
––– 7.5 –––
and center of die contact
––– 3300 –––
VGS = 0V
––– 1400 –––
pF
VDS = 15V
––– 510 –––
ƒ = 1.0MHz, See Fig. 5…
Source-Drain Ratings and Characteristics
IS
I SM
V SD
t rr
Q rr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) …
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
85
––– –––
showing the
A
G
integral reverse
––– ––– 340
S
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, IS = 51A, VGS = 0V „
––– 72 110
ns
TJ = 25°C, IF = 51A
––– 160 240
nC di/dt = 100A/µs „…
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.
‚ Starting TJ = 25°C, L = 0.55 mH
RG = 25Ω, IAS =51A.
ƒ ISD ≤ 51A, di/dt ≤ 82A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
… Uses IRL3402 data and test conditions
† Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
** When mounted on FR-4 board using minimum recommended footprint.
For recommended footprint and soldering techniques refer to application note #AN-994.
IRL3402S
1000
1000
VGS
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
BOTTOM 2.25V
100
100
2.25V
2.25V
20µs PULSE WIDTH
TJ = 25 °C
10
0.1
1
10
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
TJ = 25 ° C
TJ = 150 ° C
1
V DS = 50V
20µs PULSE WIDTH
2
3
4
5
V GS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
10
100
Fig 2. Typical Output Characteristics
1000
10
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
20µs PULSE WIDTH
TJ = 150 °C
10
0.1
100
V DS, Drain-to-Source Voltage (V)
I D , Drain-to-Source Current (A)
VGS
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
BOTTOM 2.25V
TOP
I D, Drain-to-Source Current (A)
I D, Drain-to-Source Current (A)
TOP
6
I D = 85A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 4.5V
10V
0
20
40
60
80 100 120 140 160
T J, Junction Temperature ( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRL3402S
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
5000
4000
Ciss
3000
C oss
2000
1000
Crss
15
VGS, Gate-to-Source Voltage (V)
6000
0
1
10
ID = 85 A
VDS = 16V
10
5
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
0
VDS , Drain-to-Source Voltage (V)
40
60
80
100
120
Q G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
10000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 150 ° C
100
1000
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
20
TJ = 25 ° C
10
1
10us
100us
100
1ms
10ms
10
0.1
0.2
VGS = 0 V
0.6
1.0
1.4
1.8
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
TC = 25 °C
TJ = 150 °C
Single Pulse
1
2.2
1
10
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
100
IRL3402S
600
EAS , Single Pulse Avalanche Energy (mJ)
100
LIMITED BY PACKAGE
I D , Drain Current (A)
80
60
40
20
0
25
50
75
100
T C , Case Temperature
125
150
( ° C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
TOP
500
BOTTOM
ID
23A
32A
51A
400
300
200
100
0
25
50
75
100
125
150
Starting T J, Junction Temperature ( °C)
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
Thermal Response
(Z thJC )
10
1
D = 0.50
0.20
PDM
0.10
0.1
0.05
0.02
0.01
0.01
0.00001
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1
(Ω)
0.020
0.015
VGS = 4.5V
0.010
VGS = 7.0V
0.005
0
50
100
150
200
250
300
I D , Drain Current (A)
Fig 12. On-Resistance Vs. Drain Current
350
R DS (on), Drain-to-Source On Resistance
R DS (on), Drain-to-Source On Resistance
(Ω)
IRL3402S
0.012
0.011
0.010
0.009
ID = 85A
0.008
0.007
0.006
2
3
4
5
6
7
VGS , Gate-to-Source Voltage (V)
Fig 13. On-Resistance Vs. Gate Voltage
8
IRL3402S
D2Pak Package Outline
10.54 (.415)
10.29 (.405)
1.40 (.055)
MAX.
-A-
1.32 (.052)
1.22 (.048)
2
1.78 (.070)
1.27 (.050)
1
10.16 (.400)
RE F.
-B-
4.69 ( .185)
4.20 ( .165)
6.47 (.255)
6.18 (.243)
3
15.49 (.610)
14.73 (.580)
2.79 (.110)
2.29 (.090)
2.61 (.103)
2.32 (.091)
5.28 ( .208)
4.78 ( .188)
3X
1.40 ( .055)
1.14 ( .045)
5.08 ( .200)
0.55 (.022)
0.46 (.018)
0.93 ( .037)
3X
0.69 ( .027)
0.25 ( .010)
M
8.89 (.350)
REF .
1.39 ( .055)
1.14 ( .045)
B A M
M INIMUM RECO MME NDED FO O TP RINT
11.43 (.450)
NO TE S:
1 DIM ENS IONS AF T ER SO LDER D IP .
2 DIM ENS IONING & T OLE RA NCING P ER A NSI Y 14.5M, 1982.
3 CO NT ROLLING DIME NSIO N : INCH.
4 HE AT SINK & LEA D DIME NSIO NS DO N OT INCLUDE BURRS .
LEA D A SSIG NME NTS
1 - G ATE
2 - DRAIN
3 - SO URCE
8.89 (.350)
17.78 (.700)
3.81 (.150)
2.08 (.082)
2X
Part Marking Information
D2Pak
IN TER NATION AL
REC TIFIER
L OGO
AS SEMBLY
LOT CODE
A
PART NU MBER
F53 0S
9246
9B
1M
DATE CODE
(YYW W )
YY = YEAR
W W = W EE K
2.54 (.100)
2X
IRL3402S
Tape & Reel Information
D2Pak
TR R
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
4 .1 0 (.1 6 1)
3 .9 0 (.1 5 3)
F E E D D IR E C TIO N 1 .8 5 (.0 7 3 )
1 .6 5 (.0 6 5 )
1 .6 0 (.0 6 3)
1 .5 0 (.0 5 9)
11 .6 0 (. 45 7 )
11 .4 0 (. 44 9 )
0 .3 68 (.0 14 5 )
0 .3 42 (.0 13 5 )
15 .4 2 (.60 9 )
15 .2 2 (.60 1 )
2 4 .30 (.9 5 7)
2 3 .90 (.9 4 1)
TR L
1 0. 90 (.4 29 )
1 0. 70 (.4 21 )
1. 75 (.0 69 )
1. 25 (.0 49 )
4 .7 2 (.1 3 6)
4 .5 2 (.1 7 8)
1 6. 10 (.6 34 )
1 5. 90 (.6 26 )
FE E D D IR E C TIO N
1 3.5 0 (. 532 )
1 2.8 0 (. 504 )
2 7.4 0 (1 .079 )
2 3.9 0 (.9 41)
4
33 0.0 0
(14. 17 3)
M AX .
N O T ES :
1. C O M F O R M S T O EIA -418 .
2. C O N T R O LLIN G D IM EN SIO N : M ILLIM E T ER .
3. D IM E N S IO N M EA S U R E D @ H U B .
4. IN C LU D E S F L AN G E D IS T O R T IO N @ O U T E R ED G E.
6 0.0 0 (2 .36 2)
M IN .
26 .40 (1. 03 9)
24 .40 (.9 61 )
3
3 0.4 0 (1 .19 7)
MA X .
4
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
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IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
10/97