PD -94335
IRF1407S
IRF1407L
Benefits
●
●
●
●
●
●
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Description
Advanced HEXFET® Power MOSFETs from International
HEXFET® Power MOSFET
D
VDSS = 75V
RDS(on) = 0.0078Ω
G
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
ID = 100AV
S
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D2Pak is suitable for
high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF1407L) is available for lowprofile applications.
D2Pak
IRF1407S
TO-262
IRF1407L
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 10VX
Continuous Drain Current, VGS @ 10VX
Pulsed Drain Current QX
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche EnergyRX
Avalanche CurrentQ
Repetitive Avalanche EnergyW
Peak Diode Recovery dv/dt SX
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
100V
70V
520
3.8
200
1.3
± 20
390
See Fig.12a, 12b, 15, 16
Units
4.6
-55 to + 175
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient(PCB Mounted,steady-state)**
Typ.
Max.
Units
–––
–––
0.75
40
°C/W
**When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer
to application note #AN-994.
www.irf.com
1
10/05/01
IRF1407S/IRF1407L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
75
–––
–––
2.0
74
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.09
–––
–––
–––
–––
–––
–––
–––
160
35
54
11
150
150
140
Max.
–––
–––
0.0078
4.0
–––
20
250
200
-200
250
52
81
–––
–––
–––
–––
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
4.5
–––
LS
Internal Source Inductance
–––
7.5
–––
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance U
–––
–––
–––
–––
–––
–––
5600
890
190
5800
560
1100
–––
–––
–––
–––
–––
–––
V(BR)DSS
∆V(BR)DSS/∆TJ
IGSS
Units
V
V/°C
Ω
V
S
µA
nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA X
VGS = 10V, ID = 78A T
VDS = 10V, ID = 250µA
VDS = 25V, ID = 78A X
VDS = 75V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 78A
VDS = 60V
VGS = 10VTX
VDD = 38V
ID = 78A
RG = 2.5Ω
VGS = 10V TX
D
Between lead,
6mm (0.25in.)
G
from package
and center of die contact
S
VGS = 0V
VDS = 25V
ƒ = 1.0KHz, See Fig. 5 X
VGS = 0V, VDS = 1.0V, ƒ = 1.0KHz
VGS = 0V, VDS = 60V, ƒ = 1.0KHz
VGS = 0V, VDS = 0V to 60V
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) Q
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Notes:
Q Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
R Starting TJ = 25°C, L = 0.13mH
RG = 25Ω, IAS = 78A. (See Figure 12).
S ISD ≤ 78A, di/dt ≤ 320A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
T Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 100V
showing the
A
G
integral reverse
––– ––– 520
S
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, IS = 78A, VGS = 0VT
––– 110 170
ns
TJ = 25°C, IF = 78A
––– 390 590
nC di/dt = 100A/µs TX
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
U Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
VCalculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
WLimited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
XUses IRF1407 data and test conditions.
www.irf.com
IRF1407S/IRF1407L
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
ID , Drain-to-Source Current (A)
ID , Drain-to-Source Current (A)
TOP
4.5V
10
100
4.5V
10
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 175°C
1
1
0.1
1
10
100
0.1
1
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000.00
3.0
5.0
7.0
9.0
11.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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13.0
2.0
(Normalized)
R DS(on) , Drain-to-Source On Resistance
ID , Drain-to-Source Current (Α )
2.5
VDS = 15V
20µs PULSE WIDTH
3.0
I D = 130A
TJ = 175°C
100.00
10.00
100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
T J = 25°C
10
1.5
1.0
0.5
V GS = 10V
0.0
-60
-40
-20
0
20
40
60
80
TJ , Junction Temperature
100 120 140 160 180
( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF1407S/IRF1407L
100000
15
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
C, Capacitance(pF)
V DS = 37V
VGS, Gate-to-Source Voltage (V)
Ciss
Coss
1000
Crss
V DS = 15V
9
6
3
100
0
1
10
0
100
1000.00
120
160
200
10000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
80
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100.00
40
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
TJ = 175°C
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1000
100
10.00
T J = 25°C
1.00
100µsec
10
1msec
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
10msec
1
0.10
0.0
1.0
2.0
VSD , Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
V DS = 60V
12
Coss = Cds + Cgd
10000
ID = 78A
3.0
1
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com
IRF1407S/IRF1407L
120
LIMITED BY PACKAGE
RD
VDS
VGS
100
D.U.T.
RG
+
-VDD
I D , Drain Current (A)
80
10V
60
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
40
Fig 10a. Switching Time Test Circuit
VDS
20
90%
0
25
50
75
100
125
TC , Case Temperature
150
175
( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
1
(Z thJC)
D = 0.50
Thermal Response
0.20
0.1
0.10
P DM
0.05
t1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D =
2. Peak T
0.01
0.00001
0.0001
0.001
0.01
t1/ t
2
J = P DM x Z thJC
+T C
0.1
1
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF1407S/IRF1407L
650
1 5V
ID
TOP
32A
55A
+
V
- DD
IA S
20V
0 .0 1 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS
tp
A
EAS , Single Pulse Avalanche Energy (mJ)
D .U .T
RG
520
D R IV E R
L
VDS
BOTTOM
78A
390
260
130
0
25
50
75
100
125
Starting T , Junction
Temperature
J
150
175
( °C)
IAS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGD
3.5
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
.3µF
D.U.T.
+
V
- DS
VGS(th) Gate threshold Voltage (V)
QGS
3.0
ID = 250µA
2.5
2.0
1.5
VGS
-75 -50 -25
0
25
50
75 100 125 150 175 200
T J , Temperature ( °C )
3mA
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
Fig 14. Threshold Voltage Vs. Temperature
www.irf.com
IRF1407S/IRF1407L
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆ Tj = 25°C due to
avalanche losses
0.01
100
0.05
0.10
10
1
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
EAR , Avalanche Energy (mJ)
400
TOP
Single Pulse
BOTTOM 10% Duty Cycle
ID = 78A
300
200
100
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy
Vs. Temperature
www.irf.com
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
t av = Average time in avalanche.
175
D = Duty cycle in avalanche = t av ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = ∆T/ ZthJC
∆T/ [1.3·BV·Zth]
Iav = 2∆
EAS (AR) = PD (ave)·tav
7
IRF1407S/IRF1407L
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T*
S
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
R
-
-
T
+
Q
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
RG
VGS
*
+
-
VDD
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
[ ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 17. For N-channel HEXFET® power MOSFETs
8
www.irf.com
IRF1407S/IRF1407L
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
1 0.54 (.415 )
1 0.29 (.405 )
1.4 0 (.055 )
M AX.
-A-
1.3 2 (.05 2)
1.2 2 (.04 8)
2
1.7 8 (.07 0)
1.2 7 (.05 0)
1
10 .1 6 (.4 00 )
R E F.
-B-
4 .6 9 (.18 5)
4 .2 0 (.16 5)
6.47 (.2 55 )
6.18 (.2 43 )
3
1 5.49 (.6 10)
1 4.73 (.5 80)
2.7 9 (.110 )
2.2 9 (.090 )
2.61 (.1 03 )
2.32 (.0 91 )
5.28 (.2 08 )
4.78 (.1 88 )
3X
1.40 (.0 55)
1.14 (.0 45)
5 .08 (.20 0)
0.55 (.0 22)
0.46 (.0 18)
0.9 3 (.0 37 )
3X
0.6 9 (.0 27 )
0.25 (.0 10 )
M
8.8 9 (.3 50 )
R E F.
1.3 9 (.0 55 )
1.1 4 (.0 45 )
B A M
M IN IM U M R EC O M M E ND E D F O O TP R IN T
1 1.43 (.4 50 )
NO TE S:
1 D IM EN S IO N S A FTER SO LD E R D IP .
2 D IM EN S IO N IN G & TO LE R AN C IN G P ER AN S I Y1 4.5M , 19 82 .
3 C O N TRO L LIN G D IM EN S IO N : IN C H.
4 H E ATSINK & L EA D D IM E N SIO N S DO N O T IN C LU D E B U R RS .
8 .89 (.35 0)
LE AD AS SIG N M E N TS
1 - G ATE
2 - D RA IN
3 - SO U R C E
17 .78 (.70 0)
3.81 (.1 5 0)
2.0 8 (.08 2)
2X
2.5 4 (.100 )
2X
D2Pak Part Marking Information
THIS IS AN IRF530S WITH
LOT CODE 8024
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
www.irf.com
PART NUMBER
F530S
DATE CODE
YEAR 0 = 2000
WEEK 02
LINE L
9
IRF1407S/IRF1407L
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
EXAMPLE:
THIS IS AN IRL3103L
LOT CODE 1789
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
10
PART NUMBER
DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C
www.irf.com
IRF1407S/IRF1407L
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR R
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
4.1 0 (.16 1 )
3.9 0 (.15 3 )
F EE D D IRE C TIO N 1 .8 5 (.0 7 3 )
1 .6 5 (.0 6 5 )
1 .6 0 (.06 3)
1 .5 0 (.05 9)
1 1.60 (.45 7)
1 1.40 (.44 9)
0 .3 68 (.0 14 5)
0 .3 42 (.0 13 5)
1 5.42 (.6 09)
1 5.22 (.6 01)
24.30 (.95 7)
23.90 (.94 1)
TR L
10.90 (.42 9)
10.70 (.42 1)
1 .7 5 (.069 )
1 .2 5 (.049 )
4.7 2 (.13 6)
4.5 2 (.17 8)
1 6.10 (.6 34 )
1 5.90 (.6 26 )
F E ED D IRE C T IO N
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
M AX.
NO TES :
1. CO MF OR MS TO EIA-418.
2. CO NT RO LLING D IM EN SIO N: M ILLIM ETER .
3. DIM ENS ION M EASUR ED @ HU B.
4. INC LUD ES F LANG E DIST ORT IO N @ O UT ER EDG E.
60.00 (2.362)
M IN.
30.40 (1.197)
MA X.
26.40 (1.039)
24.40 (.961)
4
3
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/01
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11