PD- 91363E
IRLR024N
IRLU024N
HEXFET® Power MOSFET
l
l
l
l
l
l
Logic-Level Gate Drive
Surface Mount (IRLR024N)
Straight Lead (IRLU024N)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
D
VDSS = 55V
RDS(on) = 0.065Ω
G
ID = 17A
S
Description
Fifth Generation HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient device for use in
a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
D-Pak
I-Pak
IRLR024N IRLU024N
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
Units
17
12
72
45
0.3
± 16
68
11
4.5
5.0
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
Junction-to-Case
Case-to-Ambient (PCB mount)**
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
–––
3.3
50
110
°C/W
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
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1
2/10/00
IRLR/U024N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
IGSS
Min. Typ. Max. Units
Conditions
55
––– –––
V
V GS = 0V, ID = 250µA
––– 0.061 ––– V/°C Reference to 25°C, ID = 1mA
–––
––– 0.065
VGS = 10V, ID = 10A
––– ––– 0.080
Ω
VGS = 5.0V, ID = 10A
–––
––– 0.110
VGS = 4.0V, ID = 9.0A
1.0
––– 2.0
V
VDS = VGS, ID = 250µA
8.3
––– –––
S
VDS = 25V, ID = 11A
–––
––– 25
VDS = 55V, VGS = 0V
µA
–––
––– 250
VDS = 44V, VGS = 0V, TJ = 150°C
–––
––– 100
VGS = 16V
nA
–––
––– -100
VGS = -16V
–––
––– 15
ID = 11A
–––
––– 3.7
nC
VDS = 44V
–––
––– 8.5
VGS = 5.0V, See Fig. 6 and 13
–––
7.1 –––
VDD = 28V
–––
74 –––
ID = 11A
ns
–––
20 –––
RG = 12Ω, VGS = 5.0V
–––
29 –––
R D = 2.4Ω, See Fig. 10
Between lead,
–––
4.5
–––
nH
6mm (0.25in.)
G
from package
––– 7.5 –––
and center of die contact
–––
480 –––
VGS = 0V
–––
130 –––
pF
V DS = 25V
–––
61 –––
ƒ = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 17
showing the
A
G
integral reverse
––– –––
72
S
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, IS = 11A, V GS = 0V
––– 60
90
ns
TJ = 25°C, IF = 11A
––– 130 200
nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
VDD = 25V, starting TJ = 25°C, L = 790µH
RG = 25Ω, I AS = 11A. (See Figure 12)
ISD ≤ 11A, di/dt ≤ 290A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
2
Pulse width ≤ 300µs; duty cycle ≤ 2%.
This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact
Uses IRLZ24N data and test conditions.
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IRLR/U024N
100
100
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
10
1
2.5 V
20µ s P U L S E W ID T H
T J = 2 5°C
0.1
0.1
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
ID , D rain-to-S ource C urrent (A )
ID , D ra in -to-S ou rce C u rrent (A )
TOP
1
10
10
2 .5V
1
2 0µ s P U LS E W ID T H
T J = 1 75 °C
0.1
A
100
0.1
V D S , D rain-to-S ource V oltage (V )
R D S (on ) , D rain -to-S ou rc e O n R es is tan c e
(N orm a liz ed)
3.0
I D , D rain-to-So urce C urren t (A )
TJ = 2 5 °C
TJ = 1 7 5 °C
10
1
V DS = 1 5V
2 0µ s P U L S E W ID TH
3
4
5
6
7
8
9
V G S , G ate-to -So urce Voltag e (V)
Fig 3. Typical Transfer Characteristics
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A
100
Fig 2. Typical Output Characteristics
100
2
10
V D S , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics
0.1
1
10
A
I D = 17
18 AA
2.5
2.0
1.5
1.0
0.5
V G S = 1 0V
0.0
-60
-40 -20
0
20
40
60
80
A
100 120 140 160 180
T J , J unc tion T em perature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRLR/U024N
C iss
600
C , Capacitance (pF)
V GS
C is s
C rs s
C o ss
400
=
=
=
=
15
0V ,
f = 1M H z
C g s + C g d , Cd s S H O R T E D
C gd
C d s + C gd
V G S , G ate-to-S ource V oltage (V )
800
C oss
200
C rss
0
10
V D S = 4 4V
V D S = 2 8V
12
9
6
3
FO R TE S T C IRC UIT
S E E FIG U R E 1 3
0
A
1
I D = 11 A
100
0
4
V D S , D rain-to-S ourc e V oltage (V )
16
A
20
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
O P E R AT ION IN TH IS AR E A LIM ITE D
B Y R D S (on)
I D , D rain C urrent (A )
I S D , R ev ers e D rain C urre nt (A )
12
Q G , T otal G ate C harge (nC )
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
T J = 1 75 °C
T J = 25°C
10
VG S = 0V
1
0.4
0.8
1.2
1.6
V S D , S ource-to-D rain V oltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
8
A
2.0
100
1 0µ s
1 00 µ s
10
T C = 25°C
T J = 175°C
S ingle P ulse
1
1
1m s
1 0m s
10
A
100
VD S , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRLR/U024N
20
RD
VDS
I D , Drain Current (A)
VGS
15
RG
10
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
D.U.T.
+
-VDD
5V
Fig 10a. Switching Time Test Circuit
5
VDS
90%
0
25
50
75
100
125
150
175
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Therm al R esponse (Z thJ C )
10
D = 0 .5 0
1
0 .2 0
0 .1 0
0 .0 5
PD M
0 .0 2
0 .0 1
0.1
t
S IN G L E P U L S E
(T H E R M A L R E S P O N S E )
1
t2
N ote s:
1 . D u ty fac tor D = t
1
/ t
2
2. P e a k TJ = P D M x Z th JC + T C
0.01
0.00001
0.0001
0.001
0.01
0.1
A
1
t 1 , R e ctan g ula r P ulse D u ratio n (sec )
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRLR/U024N
1 5V
L
VDS
D .U .T
RG
IA S
20V
D R IV E R
+
V
- DD
0 .0 1 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
A
E A S , S ingle Pulse Avalanc he E nergy (m J)
140
TO P
120
B OTTOM
ID
4 .5 A
7.8 A
1 1A
100
80
60
40
20
0
V D D = 25 V
25
50
A
75
100
125
150
175
S tarting T J , J unc tion T em perature (°C )
V (B R )D SS
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF
.3µF
10 V
QGS
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
D.U.T.
QGD
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRLR/U024N
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
•
•
•
•
RG
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
P.W.
D=
Period
+
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® MOSFETs
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IRLR/U024N
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
2 .3 8 (.0 9 4 )
2 .1 9 (.0 8 6 )
6 .7 3 (.2 6 5 )
6 .3 5 (.2 5 0 )
-A 1 .2 7 (.0 5 0 )
0 .8 8 (.0 3 5 )
5 .4 6 (.2 1 5 )
5 .2 1 (.2 0 5 )
1 .1 4 (.0 4 5 )
0 .8 9 (.0 3 5 )
0 .5 8 (.0 2 3 )
0 .4 6 (.0 1 8 )
4
6 .4 5 (.2 4 5 )
5 .6 8 (.2 2 4 )
6 .2 2 (.2 4 5 )
5 .9 7 (.2 3 5 )
1.0 2 (.0 4 0 )
1.6 4 (.0 2 5 )
1
2
1 0 .4 2 (.4 1 0 )
9 .4 0 (.3 7 0 )
0 .5 1 (.0 2 0 )
M IN .
-B 1 .5 2 (.0 6 0 )
1 .1 5 (.0 4 5 )
2X
1 .1 4 (.0 4 5 )
0 .7 6 (.0 3 0 )
L E A D A S S IG N M E N T S
1 - GATE
3
2 - D R A IN
3 - S OU R CE
4 - D R A IN
0 .8 9 (.0 3 5 )
3X
0 .6 4 (.0 2 5 )
0 .2 5 ( .0 1 0 )
0 .5 8 (.0 2 3 )
0 .4 6 (.0 1 8 )
M A M B
N O TE S :
2 .2 8 ( .0 9 0 )
1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 .
4 .5 7 ( .1 8 0 )
2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 C O N F O R M S T O J E D E C O U T L IN E T O -2 5 2 A A .
4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP ,
S O L D E R D IP M A X. + 0 .1 6 (.0 0 6 ) .
D-Pak (TO-252AA) Part Marking Information
8
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IRLR/U024N
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
6 .7 3 (.26 5 )
6 .3 5 (.25 0 )
2 .3 8 (.0 9 4 )
2 .1 9 (.0 8 6 )
-A 1 .2 7 (.0 5 0 )
0 .8 8 (.0 3 5 )
5 .4 6 (.2 1 5 )
5 .2 1 (.2 0 5 )
0 .5 8 (.0 2 3 )
0 .4 6 (.0 1 8 )
4
6 .4 5 (.2 4 5 )
5 .6 8 (.2 2 4 )
6 .2 2 (.2 4 5 )
5 .9 7 (.2 3 5 )
1 .5 2 (.0 6 0 )
1 .1 5 (.0 4 5 )
1
2
L E A D A S S IG N M E N T S
1 - G A TE
2 - D R A IN
3 - S OUR C E
4 - D R A IN
3
-B -
N O TE S :
1 D IM E N S IO N IN G & TO L E R A N C IN G P E R A N S I Y 1 4 .5 M , 19 8 2 .
2.2 8 (.0 9 0)
1.9 1 (.0 7 5)
2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 C O N F O R M S T O J E D E C O U TL IN E T O -2 5 2 A A .
9 .6 5 (.3 8 0 )
8 .8 9 (.3 5 0 )
4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP ,
S O L D E R D IP M A X . + 0 .1 6 (.0 0 6 ).
3X
1 .1 4 (.0 45 )
0 .7 6 (.0 30 )
2 .2 8 (.0 9 0 )
2X
3X
1 .1 4 (.0 4 5 )
0 .8 9 (.0 3 5 )
0 .8 9 ( .0 3 5 )
0 .6 4 ( .0 2 5 )
0 .2 5 (.0 1 0 )
M A M B
0 .58 (.0 2 3 )
0 .46 (.0 1 8 )
I-Pak (TO-251AA) Part Marking Information
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9
IRLR/U024N
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
1 6.3 ( .641 )
1 5.7 ( .619 )
12 .1 ( .4 76 )
11 .9 ( .4 69 )
F E E D D IR E C T IO N
TRL
16 .3 ( .641 )
15 .7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
F E E D D IR E C T IO N
NO T ES :
1. C O N T R O LL IN G D IM E N S IO N : M ILLIM E T E R .
2. A LL D IM E N S IO N S A R E S H O W N IN M ILL IM E T E R S ( IN C H E S ).
3. O U T L IN E C O N F O R M S T O E IA -4 81 & E IA -54 1.
13 IN C H
16 m m
NOTES :
1. O U T LIN E C O N F O R M S T O E IA -481 .
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
Data and specifications subject to change without notice.
2/10
10
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