PD - 91402A
IRFR/U5305
HEXFET® Power MOSFET
l
l
l
l
l
l
Ultra Low On-Resistance
Surface Mount (IRFR5305)
Straight Lead (IRFU5305)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
D
VDSS = -55V
RDS(on) = 0.065Ω
G
ID = -31A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET® Power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device
for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
D-Pak
IRFR5305
I-Pak
IRFU5305
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
Units
-31
-22
-110
110
0.71
± 20
280
-16
11
-5.0
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient**
Typ.
Max.
Units
–––
–––
–––
1.4
50
110
°C/W
10/23/00
IRFR/U5305
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
V(BR)DSS
IDSS
Drain-to-Source Leakage Current
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
IGSS
Min. Typ. Max. Units
Conditions
-55
––– –––
V
VGS = 0V, ID = -250µA
––– -0.034 ––– V/°C Reference to 25°C, ID = -1mA
–––
––– 0.065
Ω
VGS = -10V, ID = -16A
-2.0
––– -4.0
V
VDS = VGS, ID = -250µA
8.0
––– –––
S
VDS = -25V, ID = -16A
–––
––– -25
VDS = -55V, VGS = 0V
µA
–––
––– -250
VDS = -44V, VGS = 0V, TJ = 150°C
–––
––– 100
VGS = 20V
nA
–––
––– -100
VGS = -20V
–––
–––
63
ID = -16A
–––
–––
13
nC
VDS = -44V
–––
–––
29
VGS = -10V, See Fig. 6 and 13
–––
14
–––
VDD = -28V
–––
66
–––
ID = -16A
ns
–––
39
–––
RG = 6.8Ω
–––
63
–––
RD = 1.6Ω, See Fig. 10
D
Between lead,
4.5 –––
–––
6mm (0.25in.)
nH
G
from package
–––
7.5 –––
and center of die contact
S
––– 1200 –––
VGS = 0V
–––
520 –––
pF
VDS = -25V
–––
250 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
-31
A
–––
–––
-110
–––
–––
–––
–––
71
170
-1.3
110
250
V
ns
nC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
S
TJ = 25°C, IS = -16A, VGS = 0V
TJ = 25°C, IF = -16A
di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
VDD = -25V, starting TJ = 25°C, L = 2.1mH
RG = 25Ω, IAS = -16A. (See Figure 12)
ISD ≤ -16A, di/dt ≤ -280A/µs, VDD ≤ V(BR)DSS,
Pulse width ≤ 300µs; duty cycle ≤ 2%.
This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact.
Uses IRF5305 data and test conditions.
TJ ≤ 175°C
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
** Uses typical socket mount.
2
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IRFR/U5305
1000
1000
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOT TOM - 4.5V
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
TOP
-ID , D rain-to-S ourc e C urrent (A )
-ID , D rain-to-S ou rc e C urre nt (A )
TO P
100
10
-4.5 V
2 0µ s P U LS E W ID TH
T cJ = 2 5°C
A
1
0.1
1
10
100
10
-4 .5 V
20 µ s P U L S E W ID T H
TCJ = 17 5°C
1
0.1
100
1
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
R D S (on) , Drain-to-S ource O n Resistance
(N orm alized)
-I D , D rain-to -So urc e C urre nt (A )
100
TJ = 2 5°C
TJ = 17 5 °C
10
V DS = -2 5 V
2 0µ s P U L S E W ID TH
4
5
6
7
8
9
-V G S , G ate -to-Source Volta ge (V )
Fig 3. Typical Transfer Characteristics
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A
100
-VD S , D rain-to-S ource V oltage (V )
-VD S , D rain-to-S ourc e V oltage (V )
1
10
10
A
I D = -27 A
1.5
1.0
0.5
V G S = -10 V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160 180
T J , Junction T em perature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFR/U5305
C, C apacitanc e (pF )
2000
C iss
V GS
C iss
C rs s
C o ss
=
=
=
=
20
0V ,
f = 1MHz
C g s + C g d , C d s S H O R TE D
C gd
C ds + C g d
-V G S , G ate -to-S ou rc e V oltage (V )
2500
V D S = -4 4V
V D S = -2 8V
16
C oss
1500
I D = -1 6A
12
1000
C rss
500
0
10
4
FO R TE S T C IR C U IT
S E E FIG U R E 1 3
0
A
1
8
100
0
-V D S , D rain-to-S ourc e V oltage (V )
30
40
50
A
60
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
O P E R A TIO N IN TH IS A R E A L IM ITE D
B Y R D S (o n)
-ID , D rain C urrent (A )
-IS D , R everse Drain C urrent (A )
20
Q G , Total G ate C harge (nC )
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
TJ = 17 5 °C
TJ = 25 °C
V G S = 0V
10
0.4
0.8
1.2
1.6
-VS D , S ourc e-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10
A
2.0
100
100µ s
10
1m s
10m s
T C = 25 °C
T J = 17 5°C
S ing le P u lse
1
1
10
100
-VD S , D rain-to-S ourc e V oltage (V )
Fig 8. Maximum Safe Operating Area
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A
IRFR/U5305
RD
VDS
35
VGS
30
D.U.T.
RG
-
-ID , Drain Current (A)
+
VDD
25
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
Fig 10a. Switching Time Test Circuit
15
10
td(on)
tr
t d(off)
tf
VGS
5
10%
0
25
50
75
100
125
150
175
TC , Case Temperature ( ° C)
90%
VDS
Fig 10b. Switching Time Waveforms
Fig 9. Maximum Drain Current Vs.
Case Temperature
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
P DM
0.05
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFR/U5305
L
VDS
+
-
D .U .T
RG
IA S
-2 0 V
tp
VD D
A
D R IV E R
0 .0 1 Ω
15V
Fig 12a. Unclamped Inductive Test
Circuit
IAS
E A S , S ingle Pulse Avalanc he E nergy (m J)
700
TO P
600
BOTTOM
ID
-6.6 A
-11 A
-1 6A
500
400
300
200
100
0
V D D = -2 5V
25
50
A
75
100
125
150
175
S tarting T J , J unc tion T em perature (°C )
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V (BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
-10V
QGS
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRFR/U5305
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
**
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
RG
VGS*
+
-
*
VDD
*
Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
D=
Period
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
[ ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For P-Channel HEXFETS
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7
IRFR/U5305
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
2 .3 8 (.0 9 4 )
2 .1 9 (.0 8 6 )
6 .7 3 (.2 6 5 )
6 .3 5 (.2 5 0 )
-A 1 .2 7 (.0 5 0 )
0 .8 8 (.0 3 5 )
5 .4 6 (.2 1 5 )
5 .2 1 (.2 0 5 )
1 .1 4 (.0 4 5 )
0 .8 9 (.0 3 5 )
0 .5 8 (.0 2 3 )
0 .4 6 (.0 1 8 )
4
6 .4 5 (.2 4 5 )
5 .6 8 (.2 2 4 )
6 .2 2 (.2 4 5 )
5 .9 7 (.2 3 5 )
1.0 2 (.0 4 0 )
1.6 4 (.0 2 5 )
1
2
1 0 .4 2 (.4 1 0 )
9 .4 0 (.3 7 0 )
0 .5 1 (.0 2 0 )
M IN .
-B 1 .5 2 (.0 6 0 )
1 .1 5 (.0 4 5 )
2X
1 .1 4 (.0 4 5 )
0 .7 6 (.0 3 0 )
L E A D A S S IG N M E N T S
1 - GATE
3
2 - D R A IN
3 - S OU R CE
4 - D R A IN
0 .8 9 (.0 3 5 )
3X
0 .6 4 (.0 2 5 )
0 .2 5 ( .0 1 0 )
0 .5 8 (.0 2 3 )
0 .4 6 (.0 1 8 )
M A M B
N O TE S :
2 .2 8 ( .0 9 0 )
1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 .
4 .5 7 ( .1 8 0 )
2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 C O N F O R M S T O J E D E C O U T L IN E T O -2 5 2 A A .
4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP ,
S O L D E R D IP M A X. + 0 .1 6 (.0 0 6 ) .
D-Pak (TO-252AA) Part Marking Information
8
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IRFR/U5305
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
6 .7 3 (.26 5 )
6 .3 5 (.25 0 )
2 .3 8 (.0 9 4 )
2 .1 9 (.0 8 6 )
-A 1 .2 7 ( .0 5 0 )
0 .8 8 ( .0 3 5 )
5 .4 6 (.2 1 5 )
5 .2 1 (.2 0 5 )
0 .5 8 (.0 2 3 )
0 .4 6 (.0 1 8 )
L E A D A S S IG N M E N T S
4
6 .4 5 (.2 4 5 )
5 .6 8 (.2 2 4 )
6 .2 2 ( .2 4 5 )
5 .9 7 ( .2 3 5 )
1 .5 2 (.0 6 0 )
1 .1 5 (.0 4 5 )
1
2
2.2 8 (.0 9 0)
1.9 1 (.0 7 5)
1 .1 4 (.0 45 )
0 .7 6 (.0 30 )
2 .28 (.0 9 0 )
2X
3 - SOURCE
4 - D R A IN
3
-B -
3X
1 - GATE
2 - D R A IN
3X
9 .6 5 ( .3 8 0 )
8 .8 9 ( .3 5 0 )
N O TE S :
1 D IM E N S IO N IN G & TO L E R A N C IN G P E R A N S I Y 1 4 .5M , 19 8 2 .
2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 C O N F O R MS TO J E D E C O U T L IN E TO -2 5 2 A A .
4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP ,
S O L D E R D IP M A X. + 0.1 6 (.0 0 6 ).
0 .8 9 (.0 35 )
0 .6 4 (.0 25 )
1 .1 4 ( .0 4 5 )
0 .8 9 ( .0 3 5 )
0 .2 5 (.0 1 0 )
M A M B
0 .5 8 (.0 2 3 )
0 .4 6 (.0 1 8 )
I-Pak (TO-251AA) Part Marking Information
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9
IRFR/U5305
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
1 6 .3 ( .6 4 1 )
1 5 .7 ( .6 1 9 )
1 2 .1 ( .4 7 6 )
1 1 .9 ( .4 6 9 )
FE E D D IR E C TIO N
TR L
1 6 .3 ( .64 1 )
1 5 .7 ( .61 9 )
8 .1 ( .3 18 )
7 .9 ( .3 12 )
FE E D D IR E C T IO N
N O T ES :
1 . C O N T R O L L IN G D IM EN S IO N : M IL L IM ET E R .
2 . AL L D IM EN SIO N S AR E SH O W N IN M IL L IM ET E R S ( IN C H E S ).
3 . O U TL IN E C O N F O R M S T O E IA -4 81 & E IA -54 1 .
1 3 IN C H
16 m m
N O T ES :
1 . O U TL IN E C O N F O R M S T O E IA-4 8 1 .
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 10/00
10
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