IRF IRF520N

PD - 91339A
IRF520N
HEXFET® Power MOSFET
l
l
l
l
l
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
D
VDSS = 100V
RDS(on) = 0.20Ω
G
Description
ID = 9.7A
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
9.7
6.8
38
48
0.32
± 20
91
5.7
4.8
5.0
-55 to + 175
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
Max.
Units
–––
0.50
–––
3.1
–––
62
°C/W
5/13/98
IRF520N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
100
–––
–––
2.0
2.7
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
LS
Internal Source Inductance
–––
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
V(BR)DSS
∆V(BR)DSS/∆TJ
IGSS
Typ.
–––
0.11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.5
23
32
23
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.20
Ω
VGS = 10V, ID = 5.7A „
4.0
V
VDS = V GS, ID = 250µA
–––
S
VDS = 50V, ID = 5.7A
25
VDS = 100V, VGS = 0V
µA
250
VDS = 80V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
25
ID = 5.7A
4.8
nC
VDS = 80V
11
VGS = 10V, See Fig. 6 and 13 „
–––
VDD = 50V
–––
ID = 5.7A
ns
–––
RG = 22Ω
–––
RD = 8.6Ω, See Fig. 10 „
Between lead,
4.5 –––
6mm (0.25in.)
nH
G
from package
7.5 –––
and center of die contact
330 –––
VGS = 0V
92 –––
pF
VDS = 25V
54 –––
ƒ = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
9.7
–––
–––
38
–––
–––
–––
–––
99
390
1.3
150
580
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 5.7A, VGS = 0V „
TJ = 25°C, I F = 5.7A
di/dt = 100A/µs „
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L = 4.7mH
RG = 25Ω, IAS = 5.7A. (See Figure 12)
ƒ ISD ≤ 5.7A, di/dt ≤ 240A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
D
S
IRF520N
100
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
I , D rain-to-Source Current (A )
D
I , D rain-to-Source Current (A )
D
10
4.5 V
20 µ s P U LS E W ID TH
TC = 2 5°C
1
0.1
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
TOP
1
10
10
4 .5V
2 0µ s P U L S E W ID TH
T C = 17 5°C
1
A
0.1
100
3.0
R D S (on) , D ra in-to -S o urc e O n R e s is ta nc e
(N o rm alize d)
I D , D ra in -to-S ourc e C urrent (A)
100
TJ = 25 °C
TJ = 17 5 °C
V DS= 50V
2 0 µ s P U LS E W ID TH
4
5
6
7
8
9
A
100
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1
10
V DS , D rain-to-S ource V oltage (V )
V D S , D rain-to-S ourc e V oltage (V )
10
1
10
V G S , G ate-to -Source Volta ge (V )
Fig 3. Typical Transfer Characteristics
A
I D = 9.5 A
2.5
2.0
1.5
1.0
0.5
V G S = 1 0V
0.0
-60
-40 -20
0
20
40
60
80
A
100 120 140 160 180
T J , J unc tion T em perature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature
IRF520N
V GS
C is s
C rs s
C o ss
500
C , Capacitance (pF)
C iss
=
=
=
=
20
0V ,
f = 1MHz
C g s + C g d , C d s S H O R TE D
C gd
C ds + C gd
V G S , G ate-to-S ource V oltage (V )
600
I D = 5.7 A
16
400
12
C oss
300
200
C rss
100
0
10
8
4
FO R TE S T C IR C U IT
S E E FIG U R E 1 3
0
A
1
100
0
V D S , D rain-to -S ource V oltage (V )
5
10
15
20
A
25
Q G , T otal G ate C harge (nC )
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
100
O P E R A TIO N IN TH IS A R E A LIM ITE D
B Y R D S (o n)
10µs
I D , Drain C urrent (A )
I SD , Reverse D rain C urrent (A)
V D S = 80 V
V D S = 50 V
V D S = 20 V
TJ = 17 5°C
10
TJ = 2 5°C
V G S = 0V
1
0.4
0.6
0.8
1.0
1.2
V S D , S ourc e-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
1.4
10
100µ s
1m s
1
10m s
T C = 25 °C
T J = 17 5°C
S ing le P u lse
0.1
1
10
100
A
1000
V D S , D rain-to-S ource V oltage (V )
Fig 8. Maximum Safe Operating Area
IRF520N
RD
VDS
10.0
VGS
D.U.T.
RG
+
- VDD
I D , Drain Current (A)
8.0
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6.0
Fig 10a. Switching Time Test Circuit
4.0
VDS
90%
2.0
0.0
25
50
75
100
125
150
10%
VGS
175
TC , Case Temperature ( °C)
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Fig 9. Maximum Drain Current Vs.
Case Temperature
Thermal Response (Z thJC )
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.01
0.00001
0.02
0.01
P DM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.1
IRF520N
L
VDS
D.U.T.
RG
+
V
- DD
IAS
10 V
tp
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
VDD
E A S , S ingle P ulse A valanche E nergy (m J)
200
TO P
B O TTO M
160
120
80
40
0
V D D = 25 V
25
VDS
ID
2 .3 A
4.0 A
5 .7A
50
A
75
100
125
150
175
S tarting T J , J unc tion T em perature (°C )
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
10 V
QGS
QGD
D.U.T.
VGS
VG
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
+
V
- DS
IRF520N
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
ƒ
+
‚
-
-
„
+

•
•
•
•
RG
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
P.W.
D=
Period
+
-
VDD
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
ISD
*
IRF520N
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
2.87 (.11 3)
2.62 (.10 3)
10 .54 (.4 15)
10 .29 (.4 05)
-B -
3 .7 8 (.149 )
3 .5 4 (.139 )
4.69 ( .18 5 )
4.20 ( .16 5 )
-A -
1 .32 (.05 2)
1 .22 (.04 8)
6.47 (.25 5)
6.10 (.24 0)
4
1 5.24 (.60 0)
1 4.84 (.58 4)
1.15 (.04 5)
M IN
1
2
1 4.09 (.55 5)
1 3.47 (.53 0)
4.06 (.16 0)
3.55 (.14 0)
3X
3X
L E A D A S S IG NM E NT S
1 - GATE
2 - D R A IN
3 - S O U RC E
4 - D R A IN
3
1 .4 0 (.0 55 )
1 .1 5 (.0 45 )
0.93 (.03 7)
0.69 (.02 7)
0 .3 6 (.01 4)
3X
M
B A M
0.55 (.02 2)
0.46 (.01 8)
2 .92 (.11 5)
2 .64 (.10 4)
2.54 (.10 0)
2X
N O TE S :
1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82.
2 C O N TR O L LIN G D IM E N S IO N : IN C H
3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 -A B .
4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S .
Part Marking Information
TO-220AB
E X A M P L E : TH IS IS A N IR F 1 0 1 0
W ITH A S S E M B L Y
L O T C O D E 9 B 1M
A
IN TE R N A T IO N A L
R E C TIFIE R
LOGO
ASSEMBLY
L OT C O D E
PART NU MBER
IR F 1 0 10
9246
9B
1M
D A TE C O D E
(Y Y W W )
YY = YEAR
W W = W EEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
5/98