PD - 91343B
IRFP140N
HEXFET® Power MOSFET
l
l
l
l
l
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
D
VDSS = 100V
RDS(on) = 0.052Ω
G
ID = 33A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole.
TO-247AC
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Units
33
23
110
140
0.91
±20
300
16
14
5.0
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Min.
Typ.
Max.
Units
––––
––––
––––
––––
0.24
––––
1.1
––––
40
°C/W
1
10/5/98
IRFP140N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
∆V(BR)DSS/∆TJ
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
IGSS
Min.
100
–––
–––
2.0
11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
VGS = 0V, ID = 250µA
0.11 ––– V/°C Reference to 25°C, ID = 1mA
––– 0.052
Ω
VGS = 10V, ID = 16A
––– 4.0
V
VDS = VGS, ID = 250µA
––– –––
S
VDS = 50V, ID = 16A
––– 25
VDS = 100V, VGS = 0V
µA
––– 250
VDS = 80V, VGS = 0V, TJ = 150°C
––– 100
VGS = 20V
nA
––– -100
VGS = -20V
––– 94
ID = 16A
––– 15
nC
VDS = 80V
––– 43
VGS = 10V, See Fig. 6 and 13
8.2 –––
VDD = 50V
39 –––
ID = 16A
ns
44 –––
RG = 5.1Ω
33 –––
RD = 3.0Ω, See Fig. 10
Between lead,
–––
5.0 –––
6mm (0.25in.)
nH
from package
–––
–––
–––
13 –––
and center of die contact
––– 1400 –––
VGS = 0V
––– 330 –––
pF
VDS = 25V
––– 170 –––
ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Q rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
33
–––
–––
110
–––
–––
–––
–––
170
1.1
1.3
250
1.6
A
V
ns
µC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 16A, VGS = 0V
TJ = 25°C, IF = 16A
di/dt = 100A/µs
D
G
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 2.0mH
RG = 25Ω, IAS = 16A. (See Figure 12)
2
ISD ≤ 16A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRF540N data and test conditions.
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IRFP140N
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTO M 4.5V
I , D rain-to-Source Current (A )
D
I , D rain-to-S ourc e C urren t (A )
D
100
10
4.5V
20µ s P U LS E W ID TH
TC = 2 5°C
1
0.1
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
TOP
1
10
A
100
4.5 V
10
2 0µ s P U L S E W ID TH
T C = 17 5°C
1
0.1
100
1
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
3.0
R D S (on) , Drain-to-S ource O n Resistance
(N orm alized)
I D , D ra in -to-S ourc e C urrent (A)
1000
100
TJ = 2 5 °C
TJ = 1 75 °C
10
V DS = 5 0V
2 0µ s P U L S E W ID TH
4
5
6
7
8
9
10
V G S , G ate-to -So urce Voltag e (V)
Fig 3. Typical Transfer Characteristics
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A
100
V DS , D rain-to-S ource V oltage (V )
V D S , D rain-to-S ourc e Voltage (V)
1
10
A
I D = 2 7A
2.5
2.0
1.5
1.0
0.5
V G S = 10 V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160 180
T J , Junction T em perature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFP140N
V GS
C iss
C rs s
C iss C o ss
C , Capacitance (pF)
2000
=
=
=
=
20
0V ,
f = 1MHz
C g s + C g d , C d s S H O R TE D
C gd
C ds + C g d
V G S , G ate-to-S ource V oltage (V )
2400
I D = 16 A
V D S = 80 V
V D S = 50 V
V D S = 20 V
16
1600
12
1200
C oss
800
C rss
400
0
10
4
FO R TE S T C IR C U IT
S E E FIG U R E 1 3
0
A
1
8
100
0
V D S , D rain-to-S ourc e V oltage (V )
40
60
80
A
100
Q G , T otal G ate C harge (nC )
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
O P E R A T IO N IN T H IS A R E A L IM ITE D
B Y R D S (o n)
I D , D rain Current (A )
I S D , Reverse D rain C urrent (A)
20
100
TJ = 1 75 °C
100
10µ s
100µ s
10
1m s
T J = 2 5°C
V G S = 0V
10
0.4
0.8
1.2
1.6
V S D , S ourc e-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
A
2.0
T C = 25 °C
T J = 17 5°C
S ing le P u lse
1
1
10m s
A
10
100
1000
V D S , D rain-to-S ource V oltage (V )
Fig 8. Maximum Safe Operating Area
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IRFP140N
RD
VDS
35
VGS
30
D.U.T.
RG
+
I D , Drain Current (A)
- VDD
25
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
15
Fig 10a. Switching Time Test Circuit
VDS
10
90%
5
0
25
50
75
100
125
150
175
TC , Case Temperature ( ° C)
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
P DM
0.10
0.1
0.05
0.02
0.01
0.01
0.00001
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFP140N
L
VDS
D.U.T.
RG
+
V
- DD
IAS
10 V
tp
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
VDD
E A S , S ingle P ulse A valanche E nergy (m J)
700
TO P
600
B O TTO M
500
400
300
200
100
0
V D D = 25 V
25
VDS
ID
6 .6A
1 1A
16 A
50
A
75
100
125
150
175
S tarting T J , J unc tion T em perature (°C )
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
10 V
QGS
QGD
D.U.T.
+
V
- DS
VGS
VG
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
6
Fig 13b. Gate Charge Test Circuit
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IRFP140N
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
•
•
•
•
RG
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
P.W.
D=
Period
+
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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7
IRFP140N
Package Outline
TO-247AC Outline
Dimensions are shown in millimeters (inches)
-D -
3.65 (.1 43)
3.55 (.1 40)
1 5.90 (.62 6)
1 5.30 (.60 2)
-B-
0.25 (.0 10) M
5 .30 (.209 )
4 .70 (.185 )
D B M
2.5 0 (.08 9)
1.5 0 (.05 9)
4
-A 5 .50 (.217)
20 .30 (.800)
19 .70 (.775)
2X
1
2
N O TES :
5.50 (.21 7)
4.50 (.17 7)
1 DIM EN S IO N IN G & TO LE R AN C IN G
P ER AN S I Y1 4.5M , 1 98 2.
2 CO N TR O LL IN G DIM EN S IO N : IN CH .
3 CO N F O RM S TO JED E C O U TLINE
TO -2 47 -A C .
3
-C -
14.8 0 (.5 83)
14.2 0 (.5 59)
2.40 (.09 4)
2.00 (.07 9)
2X
5.45 (.2 15)
2X
4.3 0 (.1 70)
3.7 0 (.1 45)
0.80 (.03 1)
3X 0.40 (.01 6)
1.4 0 (.0 56)
3 X 1.0 0 (.0 39)
0.2 5 (.0 10) M
3 .40 (.133 )
3 .00 (.118 )
2.60 (.1 02)
2.20 (.0 87)
C A S
L EA D A S SIG N M E N TS
1
2
3
4
-
G A TE
D R AIN
S O UR C E
D R AIN
Part Marking Information
TO-247AC
E X A M P L E : TH IS IS A N IR F P E 3 0
W IT H A S S E M B L Y
LO T CO DE 3A1Q
A
IN TE R N A TIO N A L
R E C T IF IE R
LO G O
PAR T NU MBER
IR F P E 3 0
3A 1Q 9302
ASSEM BLY
LOT CODE
D ATE C O DE
(Y Y W W )
YY = YEAR
W W W EEK
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http://www.irf.com/
Data and specifications subject to change without notice. 8/98
8
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