IRF IRL2203S

PRELIMINARY
PD 9.1091A
IRL2203S
HEXFET® Power MOSFET
Logic-Level Gate Drive
l Surface Mount
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
D
l
VDSS = 30V
RDS(on) = 0.007Ω
G
ID = 100A…
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
D2Pak
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 10V†
Continuous Drain Current, VGS @ 10V†
Pulsed Drain Current †
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚†
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dtĠ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
100…
71
400
3.8
130
0.83
± 20
390
60
13
1.2
-55 to + 175
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
Max.
Units
–––
–––
1.2
40
°C/W
IRL2203S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Qg
Q gs
Q gd
t d(on)
tr
t d(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
30
–––
–––
–––
1.0
47
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
LS
Internal Source Inductance
–––
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
V(BR)DSS
I GSS
Typ.
–––
0.035
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
15
210
29
54
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, I D = 1mA†
0.007
VGS = 10V, ID = 60A „
0.01
VGS = 4.5V, ID = 50A „
2.5
V
VDS = VGS, ID = 250µA
–––
S
VDS = 25V, I D = 60A†
25
VDS = 30V, VGS = 0V
µA
250
VDS = 24V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
110
I D = 60A
31
nC VDS = 24V
57
VGS = 4.5V, See Fig. 6 and 13 „†
–––
VDD = 15V
–––
I D = 60A
ns
–––
RG = 1.8Ω, VGS = 4.5V
–––
RD = 0.25Ω, See Fig. 10 „†
Between
lead,
7.5
nH
–––
and center of die contact
3500 –––
VGS = 0V
1400 –––
pF
VDS = 25V
690 –––
ƒ = 1.0MHz, See Fig. 5†
Source-Drain Ratings and Characteristics
IS
ISM
VSD
t rr
Q rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
––– 100…
–––
–––
400
–––
–––
–––
–––
94
280
1.3
140
410
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 60A, VGS = 0V „
TJ = 25°C, IF = 60A
di/dt = 100A/µs „†
D
S
Notes:
 Repetitive rating; pulse width limited by
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
‚ VDD = 15V, starting TJ = 25°C, L = 220µH
RG = 25Ω, IAS = 60A. (See Figure 12)
ƒ ISD ≤ 60A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS ,
TJ ≤ 175°C
… Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
† Uses IRL2203N data and test conditions.
** When mounted on FR-4 board using minimum recommended footprint.
For recommended footprint and soldering techniques refer to application note #AN-994.
IRL2203S
1000
1000
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
ID , D ra in -to -S o u rce C u rre n t (A )
ID , D ra in -to -S o u rce C u rre n t (A )
100
10
2.5 V
2 0µ s PU L SE W ID TH
T J = 2 5°C
1
0.1
1
10
100
0.1
100
R DS (on ) , Drain-to-S ource O n Resistance
( Norm alized)
I D , D r ain- to-S ourc e C urre nt (A )
T J = 2 5 °C
T J = 1 75 °C
10
V DS = 1 5 V
2 0 µ s P U L SE W ID TH
4.0
5.0
6.0
7.0
8.0
V G S , Ga te-to-S o urce V oltage (V )
Fig 3. Typical Transfer Characteristics
10
A
100
Fig 2. Typical Output Characteristics,
T J = 175oC
2.0
3.0
1
V D S , Drain-to-S ource Voltage (V )
1000
1
2 0µ s PU L SE W ID TH
T J = 1 75 °C
1
A
Fig 1. Typical Output Characteristics,
TJ = 25oC
100
2 .5V
10
V D S , Drain-to-S ource Voltage (V )
2.0
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
TOP
9.0
A
I D = 100 A
1.5
1.0
0.5
V G S = 10V
0.0
-60 -40 -20
0
20
40
60
80
A
100 120 140 160 180
T J , Junction Tem perature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature
IRL2203S
V GS
C is s
C rs s
C o ss
6000
15
= 0 V,
f = 1M H z
= C gs + C gd , Cds SH O RTE D
= C gd
= C ds + C g d
V G S , Gate-to-Source Voltage ( V)
C , C a p a c ita n c e (p F )
8000
C os s
4000
C rs s
2000
0
9
6
3
FOR TE ST CIR C UIT
SEE FIGU RE 1 3
0
A
10
V D S = 24 V
V D S = 15 V
12
C is s
1
I D = 60A
A
0
100
60
90
120
150
Q G , T otal G ate Charge (nC)
V D S , Drain-to-Source V oltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
O PER ATIO N IN TH IS AR EA L IM ITED
BY R DS (o n)
10 µs
I D , D ra in C u rre n t (A )
I S D , R e v e rse D ra in C u rre n t (A )
30
TJ = 25 °C
TJ = 17 5°C
100
VG S = 0 V
10
0.5
1.0
1.5
2.0
2.5
3.0
V S D , S ource-to-Drain Voltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
3.5
100
10 0µs
1m s
10
10m s
T C = 25 °C
T J = 17 5°C
S ing le Pulse
1
1
A
10
100
V D S , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
IRL2203S
RD
VDS
100
VGS
L IM ITED BY PAC KA GE
D.U.T.
RG
+
-VDD
I D , D ra in C u rre n t (A m p s)
80
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
60
Fig 10a. Switching Time Test Circuit
40
VDS
90%
20
A
0
25
50
75
100
125
150
175
10%
VGS
TC , C ase T em perature (°C )
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
T her m al R e spon se ( Z th J C )
10
1
D = 0.50
0.20
P
0.10
0.1
DM
0.05
t
Notes :
1. D uty fac tor D = t
S INGLE PULS E
( THER MAL R ESP ONS E)
0.01
0.00001
1
t2
0.02
0.01
0.0001
1
/ t
2
2. P ea k TJ = P D M x Z thJ C + T C
0.001
0.01
0.1
1
t 1 , R ectan gular P ulse D u ration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
A
10
IRL2203S
1 5V
D R IV E R
L
VD S
D .U .T
R G
IA S
5.0 V
20 V
tp
+
- VDD
A
0 .0 1 Ω
Fig 12a. Unclamped Inductive Test Circuit
V (BR )D SS
tp
E A S , S in g le P u lse A va la n c h e E n e rg y (m J )
1000
TO P
B OTTO M
800
ID
24 A
4 2A
60 A
600
400
200
VD D = 1 5V
0
25
50
A
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
5.0 V
QGS
QGD
D.U.T.
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
IRL2203S
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
ƒ
+
‚
-
-
„
+

•
•
•
•
RG
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
VDD
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
ISD
*
IRL2203S
Package Outline — D2Pak
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
1.40 ( .055)
M AX.
-A-
1.32 ( .052)
1.22 ( .048)
2
1.78 (.070)
1.27 (.050)
1
10.16 (.400)
RE F .
-B-
4.69 (.185)
4.20 (.165)
6.47 (.255)
6.18 (.243)
3
15.49 (.610)
14.73 (.580)
2.79 (.110)
2.29 (.090)
2.61 (.103)
2.32 (.091)
5.28 ( .208)
4.78 ( .188)
3X
1.40 (.055)
1.14 (.045)
5.08 (.200)
0.55 (.022)
0.46 (.018)
0.93 (.037)
3X
0.69 (.027)
0.25 (.010)
M
8.89 (.350)
RE F.
1.39 (.055)
1.14 (.045)
MINIM UM RE CO MM ENDED F OO TP RINT
B A M
11.43 (.450)
NO TE S:
1 DIM ENSIO NS AF T ER S OLDE R DIP.
2 DIM ENSIO NING & TO LERAN CING PER ANS I Y14.5M, 1982.
3 CO NTRO LLING DIME NS IO N : INC H.
4 HE AT SINK & LE AD D IM ENS IONS DO NO T INCLUDE B UR RS .
LEA D AS SIG NMEN TS
1 - GA TE
2 - DRAIN
3 - SO URCE
8.89 ( .350)
17.78 ( .700)
3.81 (.150)
2.08 (.082)
2X
2.54 (.100)
2X
Part Marking
E X AM PL E : T H IS I S A N IR F1 010
E X A M P L E : TH
IRLY
F 5 30 S
W ITISH IS
A S SA ENMB
LWOT
ITHCOADSES E9MB1M
B LY
L O T C O D E 9B 1 M
A
I NT E RN A TIO N AL
IN TE R N A TIO N A L
R E C TIF IE R
IRF 10 10
RLOG
E C TOIF IE R
F 53 0 S
9246
LOG O
9B 1 M9 2 4 6
A SS E MB LY
9B
1M
LOT
C
OD
E
A S S EM BL Y
LOT
CO DE
P AR T NU M BE R
A
P A RT N U MB E R
D A TE DCAOD
TEE C O D E
(Y YW W )
(Y Y W W )
Y Y = YE A R
YY = YE AR
W W = W EE K
W W = W E EK
IRL2203S
Tape & Reel — D2Pak
Dimensions are shown in millimeters (inches)
TR R
1 .60 (.063 )
1 .50 (.059 )
4.10 ( .16 1)
3.90 ( .15 3)
F E E D D IR E C T IO N
1 .85 ( .07 3)
1 .65 ( .06 5)
1 . 6 0 (. 0 6 3 )
1 . 5 0 (. 0 5 9 )
1 1 . 6 0 (. 4 5 7 )
1 1 . 4 0 (. 4 4 9 )
0 .3 6 8 (.0 1 4 5 )
0 .3 4 2 (.0 1 3 5 )
1 5 . 4 2 (. 6 0 9 )
1 5 . 2 2 (. 6 0 1 )
2 4 . 3 0 (. 9 5 7 )
2 3 . 9 0 (. 9 4 1 )
TR L
1 0 .9 0 (.4 2 9 )
1 0 .7 0 (.4 2 1 )
1 .7 5 (.0 6 9 )
1 .2 5 (.0 4 9 )
4 .7 2 (.1 3 6 )
4 .5 2 (.1 7 8 )
1 6 .1 0 (.6 3 4 )
1 5 .9 0 (.6 2 6 )
F E E D D IR E C T IO N
1 3 . 50 (.5 3 2 )
1 2 . 80 (.5 0 4 )
2 7 .4 0 (1 . 07 9 )
2 3 .9 0 (. 9 41 )
4
330.00
(14.173)
MAX.
NOTES :
1. C O M F O R M S T O E IA -4 1 8.
2. C O N T R O L LI N G D I M E N S IO N : M IL L IM E T E R .
3. D IM E N S I O N M E A S U R E D @ H U B .
4. IN C L U D E S F L A N G E D IS T O R T IO N @ O U T E R E D G E .
60 .0 0 (2. 3 6 2)
M IN .
26.40 (1.039)
24.40 (.961)
3 0 . 40 (1 .1 9 7)
MAX.
4
3
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http://www.irf.com/
Data and specifications subject to change without notice.
7/96