Chip position 0.6 0.4 2.2 1.9 5.4 4.9 4.5 4.3 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 BPW 33 0.8 0.6 Silizium-Fotodiode Silicon Photodiode 0.6 0.4 0.8 0.6 0.35 0.2 0.5 0.3 0.6 0.4 0 ... 5˚ Photosensitive area 2.65 mm x 2.65 mm Approx. weight 0.1 g feo06643 1.8 1.4 5.08 mm spacing GEO06643 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale ● Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm ● Sperrstromarm (typ. 20 pA) ● DIL-Plastikbauform mit hoher Packungsdichte Features ● Especially suitable for applications from 350 nm to 1100 nm ● Low reverse current (typ. 20 pA) ● DIL plastic package with high packing density Anwendungen ● Belichtungsmesser ● Farbanalyse Typ Type Bestellnummer Ordering Code BPW 33 Q62702-P76 Semiconductor Group Applications ● Exposure meters ● Color analysis 1 1997-11-19 BPW 33 Grenzwerte Maximum Ratings Bezeichnung Description Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg – 40 ... + 85 °C Sperrspannung Reverse voltage VR 7 V Verlustleistung, TA = 25 °C Total power dissipation Ptot 150 mW Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K) Characteristics (TA = 25 °C, standard light A, T = 2856 K) Bezeichnung Description Symbol Symbol Wert Value Einheit Unit Fotoempfindlichkeit, VR = 5 V Spectral sensitivity S 75 (≥ 35) nA/Ix Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity λS max 800 nm Spektraler Bereich der Fotoempfindlichkeit λ 350 ... 1100 nm Bestrahlungsempfindliche Fläche Radiant sensitive area A 7.34 mm2 Abmessung der bestrahlungsempfindlichen Fläche Dimensions of radiant sensitive area L×B 2.71 × 2.71 mm × mm Abstand Chipoberfläche zu Gehäuseoberfläche Distance chip front to case surface H 0.5 mm Halbwinkel Half angle ϕ ± 60 Grad deg. Dunkelstrom, VR = 1 V Dark current IR 20 (≤ 100) pA Nullpunktsteilheit, E = 0 Zero crossover S0 ≤ 2.5 pA/mV Semiconductor Group 2 S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax L×W 1997-11-19 BPW 33 Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K) Characteristics (TA = 25 °C, standard light A, T = 2856 K) (cont’d) Bezeichnung Description Symbol Symbol Wert Value Einheit Unit Spektrale Fotoempfindlichkeit, λ = 850 nm Spectral sensitivity Sλ 0.59 A/W Quantenausbeute, λ = 850 nm Quantum yield η 0.86 Electrons Photon Leerlaufspannung, Ev = 1000 Ix Open-circuit voltage VO 440 (≥ 375) mV Kurzschlußstrom, Ev = 1000 Ix Short-circuit current ISC 72 µA Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 1 kΩ; VR = 5 V; λ = 850 nm; Ip = 70 µA tr, tf 1.5 µs Durchlaßspannung, IF = 100 mA, E = 0 Forward voltage VF 1.3 V Kapazität, VR = 0 V, f = 1 MHz, E = 0 Capacitance C0 630 pF Temperaturkoeffizient von VO Temperature coefficient of VO TCV – 2.6 mV/K Temperaturkoeffizient von ISC Temperature coefficient of ISC TCI 0.2 %/K Rauschäquivalente Strahlungsleistung Noise equivalent power VR = 1 V, λ = 850 nm NEP 4.3 × 10– 15 W √Hz Nachweisgrenze, VR = 1 V, λ = 850 nm Detection limit D* 6.3 × 1013 cm · √Hz W Semiconductor Group 3 1997-11-19 BPW 33 Relative spectral sensitivity Srel = f (λ) Photocurrent IP = f (Ev), VR = 5 V Open-circuit voltage VO = f (Ev) OHF00062 100 OHF01064 10 3 ΙP S rel % 80 Total power dissipation Ptot = f (TA) µA 10 4 mV 10 2 10 3 VO OHF00958 160 mW Ptot 140 120 VO 100 60 10 1 10 2 80 ΙP 40 60 10 0 10 1 40 20 20 0 400 600 800 10 -1 0 10 1000 nm 1200 λ 10 2 10 lx 10 4 10 3 Capacitance C = f (VR), f = 1 MHz, E = 0 OHF00073 80 0 0 20 40 60 Ee Dark current IR = f (VR), E = 0 ΙR 10 1 0 C pA Dark current IR = f (TA), VR = 1 V, E = 0 OHF01065 1000 80 ˚C 100 TA ΙR pF 800 OHF00075 10 4 pA 10 3 60 700 600 40 10 2 500 400 300 10 1 20 200 100 0 0 1 2 3 4 5 6 7 8 0 -2 10 V 10 10 -1 10 0 10 1 V 10 2 VR VR 10 0 0 20 40 60 80 ˚C 100 TA Directional characteristics Srel = f (ϕ) 40 30 20 10 ϕ 0 OHF01402 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 0.8 0.6 Semiconductor Group 0.4 0 20 40 60 80 4 100 120 1997-11-19