BG3123... 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stages for UHF and VHF -tuners e.g. (NTSC, PAL) • Optimized for UHF (amp. B) and VHF (amp. A) 2 • Integrated gate protection diodes 3 1 VPS05604 • High AGC-range, low noise figure, high gain • Improved cross modulation at gain reduction BG3123 6 5 BG3123R 6 AGC HF Input 5 4 B 4 B A 1 Drain R G1 A 2 3 1 2 HF Output + DC G2 G1 GND 3 VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BG3123 SOT363 1=G1* 2=G2 3=D* 4=D** 5=S 6=G1** KOs BG3123R*** SOT363 1=G1** 2=S 3=D** 4=D* 5=G2 6=G1* KRs * For amp. A; ** for amp. B *** Target Data 180° rotated tape loading orientation available Maximum Ratings Parameter Symbol Drain-source voltage VDS Continuous drain current ID Value 8 V mA amp. A 25 amp. B 20 Gate 1/ gate 2-source current ±IG1/2SM 1 Gate 1/ gate 2-source voltage ±V G1/G2S 6 Total power dissipation Ptot 200 Storage temperature Tstg -55 ... 150 Channel temperature Tch 150 1 Unit V mW °C Feb-27-2004 BG3123... Thermal Resistance Parameter Symbol Value Unit Channel - soldering point 1) Rthchs ≤ 150 K/W Values Unit Electrical Characteristics Parameter Symbol min. typ. max. V(BR)DS 12 - - Gate1-source breakdown voltage +V(BR)G1SS 6 - 15 +IG1S = 10 mA, V G2S = 0 V, VDS = 0 V Gate2-source breakdown voltage +V(BR)G2SS 6 - 15 +IG1SS - - 50 µA +IG2SS - - 50 nA IDSS - - 10 µA DC Characteristics Drain-source breakdown voltage V ID = 10 µA, VG1S = 0 V, VG2S = 0 V +IG2S = 10 mA, V G1S = 0 V, VDS = 0 V Gate1-source leakage current VG1S = 6 V, VG2S = 0 V Gate2-source leakage current VG2S = 8 V, VG1S = 0 V, VDS = 0 V Drain current VDS = 5 V, VG1S = 0 V, VG2S = 4.5 V Drain-source current mA IDSX VDS = 5 V, VG2S = 4 V, RG1 = 60 kΩ, amp. A - 14 - - 14 - VG1S(p) - 0.7 - VG2S(p) - 0.6 - VDS = 5 V, VG2S = 4 V, RG1 = 50 kΩ, amp. B Gate1-source pinch-off voltage V VDS = 5 V, VG2S = 4 V, ID = 20 µA Gate2-source pinch-off voltage VDS = 5 V, I D = 20 µA 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 Feb-27-2004 BG3123... Electrical Characteristics Parameter Symbol Values min. typ. Unit max. AC Characteristics V DS = 5V, V G2S = 4V, (ID = 14 mA) (verified by random sampling) Forward transconductance gfs mS amp. A - 30 - amp. B - 25 - Gate1 input capacitance pF Cg1ss f = 10 MHz, amp. A - 1.9 - f = 10 MHz, amp. B - 1.5 - f = 10 MHz, amp. A - 1.3 - f = 10 MHz, amp. B - 1.1 - Output capacitance Cdss Power gain Gp dB f = 800 MHz, amp. A - 25 - f = 800 MHz, amp. B - 24 - f = 45 MHz, amp. A - 32 - f = 45 MHz, amp. B - 30 - Noise figure dB F f = 800 MHz, amp. A - 1.8 - f = 800 MHz, amp. B - 1.8 - f = 45 MHz, amp. A - 1.4 - f = 45 MHz, amp. B - 1.6 - 45 - - ∆G p Gain control range VG2S = 4 ... 0 V , f = 800 MHz Cross-modulation k=1%, fw=50MHz, funw=60MHz Xmod amp.A , AGC = 0 dB 90 96 - amp. B, AGC = 0 dB 90 97 - amp. A , AGC = 10 dB - 91 - amp. B , AGC = 10 dB - 94 - amp. A, AGC = 40 dB 98 103 - amp. B, AGC = 40 dB 98 104 - 3 - Feb-27-2004 BG3123... Total power dissipation Ptot = ƒ(TS) amp. A Total power dissipation Ptot = ƒ(TS) amp. B 300 300 mW 200 P tot P tot mW 200 150 150 100 100 50 50 0 0 20 40 60 80 100 120 °C 0 0 150 20 40 60 80 100 TS 150 TS Drain current ID = ƒ(IG1) Drain current ID = ƒ(IG1) VG2S = 4V VG2S = 4V amp. A amp. B 16 16 mA mA 12 12 10 10 ID ID 120 °C 8 8 6 6 4 4 2 2 0 0 10 20 30 40 50 µA 0 0 70 IG1 10 20 30 40 50 µA 70 IG1 4 Feb-27-2004 BG3123... Output characteristics ID = ƒ(V DS) VG2S = 4V, VG1S = Parameter in V Output characteristics ID = ƒ(V DS) VG2S = 4V, VG1S = Parameter in V amp. A amp. B 18 18 mA 1.7 mA 1.5 14 14 1.6 12 1.5 1.4 ID ID 12 1.3 10 10 8 8 1.2 1.3 6 6 4 4 2 2 0 0 2 4 6 8 V 10 0 0 14 1.0 2 4 6 8 V 10 VDS 14 VDS Gate 1 current IG1 = ƒ(V G1S) Gate 1 current IG1 = ƒ(V G1S) VDS = 5V, VG2S = Parameter in V VDS = 5V, VG2S = Parameter in V amp. A amp. B 120 120 4 µA µA 80 IG1 IG1 3 4 3.5 2.5 3 60 80 60 2.5 40 2 40 2 20 0 0 20 0.4 0.8 1.2 V 0 0 2 VG1S 0.4 0.8 1.2 V 2 VG1S 5 Feb-27-2004 BG3123... Gate 1 forward transconductance Gate 1 forward transconductance g fs = ƒ(ID), VDS = 5V, VG2S = Parameter amp. A g fs = ƒ(ID), VDS = 5V, VG2S = Parameter amp. B 25 32 4V mS 4V mS 3V 3V 2.5V 20 g fs g fs 24 2.5V 15 2V 16 10 12 8 2V 5 4 0 0 4 8 12 mA 0 0 20 4 mA 8 16 ID ID Drain current ID = ƒ(VG1S) VDS = 5V, VG2S = Parameter Drain current ID = ƒ(V G1S) VDS = 5V, VG2S = Parameter amp. A amp. B 28 16 4V mA 4V mA 3V 3V 12 ID ID 20 10 2V 16 8 12 2V 6 8 4 1.5V 4 0 0 1.5V 2 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 V 0 0 2 VG1S 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 V 2 VG1S 6 Feb-27-2004 BG3123... Drain current ID = ƒ(VGG ) amp. A VDS = 5V, VG2S = 4V, RG1 = 60kΩ Drain current ID = ƒ(V GG) amp. B VDS = 5V, VG2S = 4V, RG1 = 50kΩ (connected to VGG, VGG =gate1 supply voltage) (connected to VGG, V GG=gate1 supply voltage) 18 18 mA mA 12 12 ID 14 ID 14 10 10 8 8 6 6 4 4 2 2 0 0 1 2 3 4 V 5 0 0 7 1 2 3 4 V 5 VGG 7 VGG Drain current ID = ƒ(VGG) Drain current ID = ƒ(VGG) VG2S = 4V, RG1 = Parameter in kΩ VG2S = 4V, RG1 = Parameter in kΩ amp. A amp. B 18 18 50 mA mA 40 60 14 14 50 12 60 ID ID 12 80 10 10 70 100 8 8 6 6 4 4 2 2 0 0 1 2 3 4 5 V 0 0 7 VGG=VDS 1 2 3 4 5 V 7 VGG=VDS 7 Feb-27-2004 BG3123... Crossmodulation Vunw = (AGC) Crossmodulation Vunw = (AGC) VDS = 5 V, Rg1 = 68 kΩ VDS = 5 V, Rg1 = 56 kΩ amp.A amp.B 120 120 V unw dBµV V unw dBµV 100 100 90 90 80 0 10 20 30 dB 80 0 50 10 AGC 20 30 dB 50 AGC Cossmodulation test circuit VAGC VDS 4n7 R1 10 kOhm 2.2 µH 4n7 4n7 RL 50 Ohm 4n7 RGEN 50 Ohm RG1 50 Ohm VGG 8 Feb-27-2004