BG3130... 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stage for UHF and VHF -tuners e.g. (NTSC, PAL) • Two AGC amplifiers in one single package 3 2 • Integrated gate protection diodes 1 VPS05604 • High AGC-range, low noise figure, high gain • Improved cross modulation at gain reduction BG3130 6 BG3130R 6 5 4 Drain AGC HF Input 4 5 A B A 1 R G1 B 2 1 3 2 HF Output + DC G2 G1 GND 3 VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BG3130 SOT363 1=G1 2=G2 3=D 4=D 5=S 6=G1 KAs BG3130R SOT363 1=G1 2=S 3=D 4=D 5=G2 6=G1 KHs 180° rotated tape loading orientation available Maximum Ratings Parameter Symbol Drain-source voltage VDS 8 V Continuous drain current ID 25 mA Gate 1/ gate 2-source current ±IG1/2SM 1 Gate 1/ gate 2-source voltage ±V G1/G2S 6 Total power dissipation Ptot 200 Storage temperature Tstg -55 ... 150 Channel temperature Tch 150 Value Unit V mW °C Thermal Resistance Parameter Symbol Value Unit Channel - soldering point1) Rthchs ≤ 280 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Feb-27-2004 BG3130... Electrical Characteristics Parameter Symbol Values Unit min. typ. max. V(BR)DS 12 - - +V(BR)G1SS 6 - 15 +V(BR)G2SS 6 - 15 +IG1SS - - 50 µA +IG2SS - - 50 nA IDSS - - 10 µA IDSX - 10 - mA VG1S(p) - 0.7 - V VG2S(p) - 0.6 - DC Characteristics Drain-source breakdown voltage V ID = 10 µA, VG1S = 0 V, VG2S = 0 V Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 V, VDS = 0 V Gate2-source breakdown voltage +IG2S = 10 mA, V G1S = 0 V, VDS = 0 V Gate1-source leakage current VG1S = 6 V, V G2S = 0 V Gate2-source leakage current VG2S = 8 V, V G1S = 0 V, VDS = 0 V Drain current VDS = 5 V, VG1S = 0 V, VG2S = 4.5 V Drain-source current VDS = 5 V, VG2S = 4 V, RG1 = 120 kΩ Gate1-source pinch-off voltage VDS = 5 V, VG2S = 4 V, ID = 20 µA Gate2-source pinch-off voltage VDS = 5 V, I D = 20 µA 2 Feb-27-2004 BG3130... Electrical Characteristics Parameter Symbol Values min. typ. Unit max. AC Characteristics V DS = 5V, V G2S = 4V, (ID = 14 mA) (verified by random sampling) Forward transconductance gfs - 33 - mS Gate1 input capacitance Cg1ss - 1.9 - pF Cdss - 1.1 - f = 10 MHz Output capacitance f = 10 MHz Power gain Gp dB f = 800 MHz - 24 - f = 45 MHz - 31 - Noise figure dB F f = 800 MHz - 1.3 - f = 45 MHz - 1.7 - 45 - - ∆Gp Gain control range VG2S = 4 ... 0 V, f = 800 MHz Cross-modulation k=1%, fw=50MHz, funw=60MHz Xmod - AGC = 0 dB 90 - - AGC = 10 dB - 87 - AGC = 40 dB 96 100 - 3 Feb-27-2004 BG3130... Total power dissipation Ptot = ƒ(TS) amp. A = amp. B Drain current ID = ƒ(I G1) VG2S = 4V amp. A = amp. B 300 30 mA 200 20 ID P tot mW 150 15 100 10 50 5 0 0 20 40 60 80 100 120 °C 0 0 150 10 20 30 40 50 60 70 80 µA 100 IG1 TS Output characteristics ID = ƒ(V DS) amp. A = amp. B Gate 1 current IG1 = ƒ(VG1S) VDS = 5V, VG2S = Parameter amp. A = amp. B 225 22 mA 1.3V µA 18 14 VG1S ID 175 1.2V 16 4V 1.1V 3.5V 150 125 12 3V 1V 10 100 8 75 2.5V 6 50 0.8V 4 2V 25 2 0 0 2 4 6 8 10 V 0 0 14 VDS 0.4 0.8 1.2 1.6 2 2.4 V 3.2 IG1 4 Feb-27-2004 BG3130... Drain current ID = ƒ(V G1S) VDS = 5V, VG2S = Parameter Gate 1 forward transconductance g fs = ƒ(ID), VDS = 5V, VG2S = Parameter amp. A = amp. B amp. A = amp. B 40 32 4V µA mS 3V 4V 30 24 2.5V 25 ID g fs 3.5V 20 3V 20 16 2V 15 12 2.5V 2V 10 8 1.5V 5 0 0 4 4 8 12 16 20 24 28 mA 0 0 36 0.2 0.4 0.6 0.8 1.2 1.4 1.6 V 1 ID VG1S Drain current ID = ƒ(VGG ) amp.A=amp.B Drain current ID = ƒ(VGG) VDS = 5V, VG2S = 4V, RG1 = 120kΩ VG2S = 4V, RG1 = Parameter in kΩ (connected to VGG, VGG =gate1 supply voltage) amp. A = amp. B 13 mA 22 70 mA 80 11 18 10 100 16 ID 9 ID 2 8 7 12 6 10 5 120 14 8 4 6 3 4 2 2 1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V 0 0 5 VGG 1 2 3 4 5 V 7 VGG=VDS 5 Feb-27-2004 BG3130... Crossmodulation Vunw = (AGC) VDS = 5 V, Rg1 = 68 kΩ 120 V unw dBµV 100 90 80 0 10 20 30 dB 50 AGC Cossmodulation test circuit VAGC VDS 4n7 R1 10 kOhm 2.2 µH 4n7 4n7 RL 50 Ohm 4n7 RGEN 50 Ohm RG1 50 Ohm VGG 6 Feb-27-2004