INFINEON BG3130

BG3130...
4
DUAL N-Channel MOSFET Tetrode
5
6
• Two gain controlled input stage for UHF
and VHF -tuners e.g. (NTSC, PAL)
• Two AGC amplifiers in one single package
3
2
• Integrated gate protection diodes
1
VPS05604
• High AGC-range, low noise figure, high gain
• Improved cross modulation at gain reduction
BG3130
6
BG3130R
6
5
4
Drain
AGC
HF
Input
4
5
A
B
A
1
R G1
B
2
1
3
2
HF Output
+ DC
G2
G1
GND
3
VGG
EHA07461
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Package
Pin Configuration
Marking
BG3130
SOT363
1=G1
2=G2
3=D
4=D
5=S
6=G1
KAs
BG3130R
SOT363
1=G1
2=S
3=D
4=D
5=G2
6=G1
KHs
180° rotated tape loading orientation available
Maximum Ratings
Parameter
Symbol
Drain-source voltage
VDS
8
V
Continuous drain current
ID
25
mA
Gate 1/ gate 2-source current
±IG1/2SM
1
Gate 1/ gate 2-source voltage
±V G1/G2S
6
Total power dissipation
Ptot
200
Storage temperature
Tstg
-55 ... 150
Channel temperature
Tch
150
Value
Unit
V
mW
°C
Thermal Resistance
Parameter
Symbol
Value
Unit
Channel - soldering point1)
Rthchs
≤ 280
K/W
1For calculation of R
thJA please refer to Application Note Thermal Resistance
1
Feb-27-2004
BG3130...
Electrical Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)DS
12
-
-
+V(BR)G1SS
6
-
15
+V(BR)G2SS
6
-
15
+IG1SS
-
-
50
µA
+IG2SS
-
-
50
nA
IDSS
-
-
10
µA
IDSX
-
10
-
mA
VG1S(p)
-
0.7
-
V
VG2S(p)
-
0.6
-
DC Characteristics
Drain-source breakdown voltage
V
ID = 10 µA, VG1S = 0 V, VG2S = 0 V
Gate1-source breakdown voltage
+IG1S = 10 mA, V G2S = 0 V, VDS = 0 V
Gate2-source breakdown voltage
+IG2S = 10 mA, V G1S = 0 V, VDS = 0 V
Gate1-source leakage current
VG1S = 6 V, V G2S = 0 V
Gate2-source leakage current
VG2S = 8 V, V G1S = 0 V, VDS = 0 V
Drain current
VDS = 5 V, VG1S = 0 V, VG2S = 4.5 V
Drain-source current
VDS = 5 V, VG2S = 4 V, RG1 = 120 kΩ
Gate1-source pinch-off voltage
VDS = 5 V, VG2S = 4 V, ID = 20 µA
Gate2-source pinch-off voltage
VDS = 5 V, I D = 20 µA
2
Feb-27-2004
BG3130...
Electrical Characteristics
Parameter
Symbol
Values
min.
typ.
Unit
max.
AC Characteristics V DS = 5V, V G2S = 4V, (ID = 14 mA) (verified by random sampling)
Forward transconductance
gfs
-
33
-
mS
Gate1 input capacitance
Cg1ss
-
1.9
-
pF
Cdss
-
1.1
-
f = 10 MHz
Output capacitance
f = 10 MHz
Power gain
Gp
dB
f = 800 MHz
-
24
-
f = 45 MHz
-
31
-
Noise figure
dB
F
f = 800 MHz
-
1.3
-
f = 45 MHz
-
1.7
-
45
-
-
∆Gp
Gain control range
VG2S = 4 ... 0 V, f = 800 MHz
Cross-modulation k=1%, fw=50MHz, funw=60MHz Xmod
-
AGC = 0 dB
90
-
-
AGC = 10 dB
-
87
-
AGC = 40 dB
96
100
-
3
Feb-27-2004
BG3130...
Total power dissipation Ptot = ƒ(TS)
amp. A = amp. B
Drain current ID = ƒ(I G1)
VG2S = 4V
amp. A = amp. B
300
30
mA
200
20
ID
P tot
mW
150
15
100
10
50
5
0
0
20
40
60
80
100
120 °C
0
0
150
10
20
30
40
50
60
70
80 µA
100
IG1
TS
Output characteristics ID = ƒ(V DS)
amp. A = amp. B
Gate 1 current IG1 = ƒ(VG1S)
VDS = 5V, VG2S = Parameter
amp. A = amp. B
225
22
mA
1.3V
µA
18
14
VG1S
ID
175
1.2V
16
4V
1.1V
3.5V
150
125
12
3V
1V
10
100
8
75
2.5V
6
50
0.8V
4
2V
25
2
0
0
2
4
6
8
10
V
0
0
14
VDS
0.4
0.8
1.2
1.6
2
2.4
V
3.2
IG1
4
Feb-27-2004
BG3130...
Drain current ID = ƒ(V G1S)
VDS = 5V, VG2S = Parameter
Gate 1 forward transconductance
g fs = ƒ(ID), VDS = 5V, VG2S = Parameter
amp. A = amp. B
amp. A = amp. B
40
32
4V
µA
mS
3V
4V
30
24
2.5V
25
ID
g fs
3.5V
20
3V
20
16
2V
15
12
2.5V
2V
10
8
1.5V
5
0
0
4
4
8
12
16
20
24
28 mA
0
0
36
0.2 0.4 0.6 0.8
1.2 1.4 1.6 V
1
ID
VG1S
Drain current ID = ƒ(VGG ) amp.A=amp.B
Drain current ID = ƒ(VGG)
VDS = 5V, VG2S = 4V, RG1 = 120kΩ
VG2S = 4V, RG1 = Parameter in kΩ
(connected to VGG, VGG =gate1 supply voltage)
amp. A = amp. B
13
mA
22
70
mA
80
11
18
10
100
16
ID
9
ID
2
8
7
12
6
10
5
120
14
8
4
6
3
4
2
2
1
0
0
0.5
1
1.5
2
2.5
3
3.5
4
V
0
0
5
VGG
1
2
3
4
5
V
7
VGG=VDS
5
Feb-27-2004
BG3130...
Crossmodulation Vunw = (AGC)
VDS = 5 V, Rg1 = 68 kΩ
120
V unw
dBµV
100
90
80
0
10
20
30
dB
50
AGC
Cossmodulation test circuit
VAGC
VDS
4n7
R1
10 kOhm
2.2 µH
4n7
4n7
RL
50 Ohm
4n7
RGEN
50 Ohm
RG1
50 Ohm
VGG
6
Feb-27-2004