IPU14N03L Preliminary data OptiMOSâ Power-Transistor Buck converter series Product Summary Feature N-Channel Logic Level Low on-resistance RDS(on) Excellent Gate Charge x RDS(on) product (FOM) VDS 30 RDS(on) ID V m 14.4 30 A P-TO251 Superior thermal resistance 175°C operating temperature dv/dt rated Ideal for fast switching buck converter Ideal for fast switching buck converter Type Package Ordering Code Marking IPU14N03L P-TO251 Q67042-S4115 14N03L Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TC=25°C 30 TC=100°C 30 ID puls 120 EAS 20 mJ dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation Ptot 60 W -55... +175 °C Pulsed drain current TC=25°C Avalanche energy, single pulse ID =20A, VDD =25V, RGS =25 Reverse diode dv/dt IS =30A, VDS =-V, di/dt=200A/µs, Tjmax =175°C TC=25°C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 55/175/56 Page 1 2002-03-04 IPU14N03L Preliminary data Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 2.5 Thermal resistance, junction - ambient, leaded RthJA - - 100 SMD version, device on PCB: RthJA - - 75 - - 50 @ min. footprint @ 6 cm 2 cooling area 1) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 30 - - VGS(th) 1.2 1.6 2 Static Characteristics Drain-source breakdown voltage V VGS =0V, ID =1mA Gate threshold voltage, VGS = VDS ID = 30 µA Zero gate voltage drain current µA IDSS VDS =30V, VGS =0V, Tj=25°C - 0.01 1 VDS =30V, VGS =0V, Tj=125°C - 10 100 IGSS - 1 100 nA RDS(on) - 16.7 20.9 m RDS(on) - 11.5 14.4 Gate-source leakage current VGS =20V, VDS=0V Drain-source on-state resistance VGS =4.5V, ID=20A Drain-source on-state resistance VGS =10V, ID =20A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2002-03-04 IPU14N03L Preliminary data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 24 48 - S pF Dynamic Characteristics Transconductance gfs VDS 2*ID *RDS(on)max , ID =20A Input capacitance Ciss VGS =0V, VDS =25V, - 770 1025 Output capacitance Coss f=1MHz - 280 370 Reverse transfer capacitance Crss - 74 111 Gate resistance RG - 1.5 - Turn-on delay time td(on) - 5.9 8.9 ns Rise time tr - 30.4 45.6 Turn-off delay time td(off) - 26.6 39.9 Fall time tf - 14.4 21.6 - 2.5 3.1 - 6.2 9.3 - 10.6 13.3 - 10.24 12.8 V(plateau) VDD =15V, ID=15A - 3.4 - V IS - - 30 A - - 120 VDD =15V, VGS=10V, ID =15A, RG =8.5 Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =15V, ID =15A VDD =15V, ID =15A, nC VGS =0 to 5V Output charge Qoss VDS =15V, ID =15A, VGS =0V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS =0V, IF =30A - 0.9 1.2 V Reverse recovery time trr VR =-V, IF=lS, - 23 29 ns Reverse recovery charge Qrr diF /dt=100A/µs - 15 19 nC Page 3 2002-03-04 IPU14N03L Preliminary data 1 Power dissipation 2 Drain current Ptot = f (TC ) ID = f (TC ) 65 parameter: VGS 10 V IPU14N03L 32 IPU14N03L W A 55 50 24 ID Ptot 45 40 20 35 16 30 25 12 20 8 15 10 4 5 0 0 20 40 60 80 0 0 100 120 140 160 °C 190 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJC = f (tp ) parameter : D = 0 , TC = 25 °C parameter : D = tp /T 10 10 1 3 IPU14N03L IPU14N03L K/W A 10 0 D Z thJC tp = 5.7µs /I 10 2 DS ( on ) = V ID DS 10 µs R 10 -1 100 µs D = 0.50 0.20 10 1 0.10 1 ms 10 -2 0.05 single pulse 0.02 0.01 10 ms DC 10 0 10 -1 10 0 10 1 V 10 2 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp VDS Page 4 2002-03-04 IPU14N03L Preliminary data 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ); Tj=25°C RDS(on) = f (ID ) parameter: tp = 80 µs parameter: VGS IPU14N03L A 50 Ptot = 60W k 60 j ID 55 50 45 i 40 35 f g h i j 40 2.8 c 3.0 d 3.2 e 3.4 f 3.6 g 3.8 h 4.0 4.2 j 4.5 k 10.0 g 25 2.6 b h i 30 35 30 25 20 15 20 f 15 k 10 e 10 d 5 c 5 0 0 IPU14N03L VGS [V] a RDS(on) 75 a 1 2 3 VGS [V] = f 3.6 g 3.8 h i 4.0 4.2 10 20 j 4.5 k 10.0 b V 4 0 0 6 30 40 A 50 65 ID VDS 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 µs gfs = f(ID ); Tj=25°C parameter: gfs 100 70 S A 60 80 55 50 g fs ID 70 60 45 40 50 35 30 40 25 30 20 20 15 10 10 0 0 5 1 2 3 4 5.5 V VGS Page 5 0 0 20 40 60 80 120 A ID 2002-03-04 IPU14N03L Preliminary data 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj) parameter : ID = 20 A, VGS = 10 V parameter: VGS = VDS 34 IPU14N03L 2.5 V V GS(th) RDS(on) 28 24 20 max 1.5 typ 98% 16 1 typ 12 min 8 0.5 4 0 -60 -20 20 60 100 °C 140 0 -60 200 -20 20 60 100 180 °C Tj Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS =0V, f=1 MHz parameter: Tj , tp = 80 µs 10 4 10 3 pF IPU14N03L A Ciss 10 2 C IF 10 3 Coss Crss 10 2 10 1 Tj = 25 °C typ Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 10 1 0 5 10 15 20 V 30 10 0 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD VDS Page 6 2002-03-04 IPU14N03L Preliminary data 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (Tj ) VGS = f (QGate ) par.: ID = 20 A, VDD = 25 V, RGS = 25 parameter: ID = 15 A pulsed 20 16 mJ IPU14N03L V 16 VGS E AS 12 14 12 10 0.2 VDS max 10 8 8 6 0.5 VDS max 0.8 VDS max 6 4 4 2 2 0 25 45 65 85 105 125 145 °C 185 Tj 0 0 4 8 12 16 20 24 nC 30 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) parameter: ID=10 mA 36 IPU14N03L V (BR)DSS V 34 33 32 31 30 29 28 27 -60 -20 20 60 100 140 °C 200 Tj Page 7 2002-03-04 Preliminary data IPU14N03L Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2002-03-04