SPN04N60C2 Final data Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best RDS(on) in SOT 223 VDS 600 V • Ultra low gate charge RDS(on) 0.95 Ω • Extreme dv/dt rated ID 0.8 A • Ultra low effective capacitances SOT-223 • Improved noise immunity 4 3 2 1 Type Package Ordering Code Marking SPN04N60C2 SOT-223 Q67040-S4308 04N60C2 VPS05163 D,2/4 G,1 S,3 Maximum Ratings, at TA = 25°C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TA = 25 °C 0.8 TA = 70 °C 0.65 Pulsed drain current, tp limited by Tjmax ID puls 3 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation, TA = 25°C Ptot 1.8 W Operating and storage temperature Tj , Tstg -55... +150 °C V/ns IS =0.8A, VDS < VDD , di/dt=100A/µs, Tjmax=150°C Page 1 2002-07-29 SPN04N60C2 Final data Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - 20 - @ min. footprint - 110 - @ 6 cm2 cooling area 1) - - 70 Linear derating factor - 0.05 - - - 260 °C V Characteristics Thermal resistance, junction - soldering point RthJS SMD version, device on PCB: RthJA Soldering temperature, Tsold K/W W/K 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Static Characteristics Drain-source breakdown voltage V(BR)DSS 600 - - VGS(th) 3.5 4.5 5.5 VGS =0V, ID =0.25mA Gate threshold voltage, VGS = VDS ID =200µA Zero gate voltage drain current µA IDSS VDS = 600 V, VGS = 0 V, Tj = 25 °C - 0.1 1 VDS = 600 V, VGS = 0 V, Tj = 150 °C - - 50 IGSS - - 100 nA RDS(on) - 0.8 0.95 Ω RG - 0.95 - Gate-source leakage current VGS =20V, VDS=0V Drain-source on-state resistance VGS =10V, ID=0.65A, Tj=25°C Gate input resistance f = 1 MHz, open drain 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2002-07-29 SPN04N60C2 Final data Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. - 1 - S pF Characteristics Transconductance g fs V DS≥2*I D*R DS(on)max, ID=0.65A Input capacitance Ciss V GS=0V, V DS=25V, - 600 - Output capacitance Coss f=1MHz - 325 - Reverse transfer capacitance Crss - 15 - - 20 - - 35 - Effective output capacitance, 1) Co(er) V GS=0V, energy related V DS=0V to 480V Effective output capacitance, 2) Co(tr) time related Turn-on delay time t d(on) V DD=380V, V GS=0/13V, - 10 - Rise time tr ID=0.8A, RG=18Ω, - 30 - Turn-off delay time t d(off) Tj=125°C - 60 - Fall time tf - 30 - - 4.1 - - 9.2 - - 17 - - 7.5 - pF ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =350V, ID =0.8A VDD =350V, ID =0.8A, nC VGS =0 to 10V Gate plateau voltage V(plateau) VDD =350V, ID =0.8A V 1C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS . 2Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Page 3 2002-07-29 SPN04N60C2 Final data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. - - 0.8 - - 3 Characteristics Inverse diode continuous IS TA=25°C A forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD V GS=0V, I F=IS - 0.85 1.05 V Reverse recovery time trr V R=350V, I F=I S , - 200 - ns Reverse recovery charge Qrr diF/dt=100A/µs - 1.2 - µC Page 4 2002-07-29 SPN04N60C2 Final data 1 Power dissipation 2 Drain current Ptot = f (TA ) ID = f (TA ) parameter: VGS ≥ 10 V 1.9 SPN04N60C2 0.9 W SPN04N60C2 A 1.6 0.7 0.6 1.2 ID Ptot 1.4 0.5 1 0.4 0.8 0.3 0.6 0.4 0.2 0.2 0.1 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 TA 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJS = f (tp ) parameter : D = 0 , TA =25°C parameter : D = tp /T 1 SPN04N60C2 10 2 /I D A = R on K/W tp = 11.0µs S ) 10 1 100 µs ID 10 0 ( DS V D SPN04N60C2 Z thJA 10 160 °C TA 1 ms 10 -1 10 ms 10 0 D = 0.50 0.20 0.10 single pulse 10 -2 0.05 10 -1 0.02 0.01 DC 10 -3 0 10 10 1 10 2 V 10 3 VDS 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 tp Page 5 2002-07-29 4 SPN04N60C2 Final data 5 Typ. output characteristic 6 Typ. output characteristic ID = f (VDS ); Tj=25°C ID = f (VDS ); Tj=150°C parameter: tp = 10 µs, VGS parameter: tp = 10 µs, VGS 8 14 A 20V 12V 10V 20V 12V 10V 9.5V A 9V 9V 8.5V ID 8 ID 10 9.5V 8V 4 8.5V 7.5V 6 8V 7V 4 2 7.5V 6.5V 7V 2 6V 6.5V 0 0 5 10 15 0 0 25 V 5 10 15 25 V VDS VDS 7 Typ. drain-source on resistance 8 Drain-source on-state resistance RDS(on) =f(ID ) RDS(on) = f (Tj ) parameter: Tj =150°C, VGS parameter : ID = 0.65 A, VGS = 10 V 5 5.5 SPN04N60C2 Ω Ω 4 RDS(on) R DS(on) 4.5 3.5 4 3.5 3 3 20V 12V 10V 9V 8.5V 8V 7.5V 7V 6.5V 6V 2.5 2 1.5 1 0 1 2 3 4 5 6 7 A 2.5 2 1.5 98% 1 typ 0.5 8.5 ID 0 -60 -20 20 60 100 °C 180 Tj Page 6 2002-07-29 SPN04N60C2 Final data 9 Typ. transfer characteristics 10 Gate threshold voltage ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max VGS(th) = f (Tj) parameter: tp = 10 µs parameter: VGS = VDS , ID = 200 µA 7 16 A V 10 VGS(th) ID 12 25 °C 150 °C 5 max. 4 8 typ. 3 6 min. 2 4 1 2 0 0 2 4 6 8 10 12 14 16 0 -60 V 20 VGS -20 20 60 100 °C 180 Tj 11 Typ. gate charge 12 Forward characteristics of body diode VGS = f (QGate ) IF = f (VSD ) parameter: ID = 0.8 A pulsed parameter: Tj , tp = 10 µs 16 10 1 SPN04N60C2 V A 12 0,2 VDS max 0,8 VDS max 10 0 IF V GS SPN04N60C2 10 8 6 10 -1 Tj = 25 °C typ 4 Tj = 150 °C typ Tj = 25 °C (98%) 2 0 0 Tj = 150 °C (98%) 4 8 12 16 20 nC 28 QGate 10 -2 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 7 2002-07-29 SPN04N60C2 Final data 13 Drain-source breakdown voltage 14 Typ. capacitances V(BR)DSS = f (Tj ) C = f (VDS) parameter: VGS =0V, f=1 MHz 10 4 SPN04N60C2 720 pF 680 10 3 Ciss 660 C V(BR)DSS V 640 10 2 620 Coss 600 10 1 580 Crss 560 540 -60 -20 20 60 100 °C 180 10 0 0 100 200 300 400 V 600 VDS Tj 15 Typ. Coss stored energy Eoss=f(VDS ) 3.5 E oss µJ 2.5 2 1.5 1 0.5 0 0 100 200 300 400 V 600 VDS Page 8 2002-07-29 SPN04N60C2 Final data Definition of diodes switching characteristics SOT223 1.6 ±0.1 6.5 ±0.2 0.1 max +0.2 acc. to DIN 6784 1 2 3 3.5 ±0.2 4 0.5 min B 7 ±0.3 3 ±0.1 15˚max A 0.28 ±0.04 2.3 0.7 ±0.1 4.6 0.25 M A 0.25 Page 9 M B 2002-07-29 Final data SPN04N60C2 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 10 2002-07-29