INFINEON IKCS22F60B2A

Data Sheet, July 2009
Control integrated Power
System (CIPOS™)
IKCS22F60B2A
IKCS22F60B2C
http://www.infineon.com/cipos
Power Management & Drives
N e v e r
s t o p
t h i n k i n g .
CIPOS™ IKCS22F60B2A
IKCS22F60B2C
Revision History:
Previous Version:
Page
4
10
11
2009-07
Rev.2.3
2.2
Subjects (major changes since last revision)
Added UL certification
Change VIT,HYS
Revised energy units
Authors: W. Frank, H. Rettinger
Edition 2008-11
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© Infineon Technologies AG 7/28/09.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office or representatives (http://www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office or representatives.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of
the user or other persons may be endangered.
®
TrenchStop is a registered trademark of Infineon Technologies AG.
CIPOS™, CoolMOS™, CoolSET™, DuoPack™ and thinQ!™ are trademarks of Infineon Technologies AG.
Data Sheet
2/18
Rev. 2.3, July 2009
CIPOS™ IKCS22F60B2A
IKCS22F60B2C
Table of Contents
CIPOS™ Control integrated Power System ..................................................................................................4
Features........................................................................................................................................................4
Target Applications .....................................................................................................................................4
Description ...................................................................................................................................................4
System Configuration .................................................................................................................................4
Internal Electrical Schematic...........................................................................................................................5
Pin Assignment.................................................................................................................................................6
Pin Description ............................................................................................................................................6
/HIN1,2,3 and /LIN1,2,3 (Low side and high side control pins, Pin 15 - 20) ................................................6
TEMP (temperature NTC, Pin 24) ...............................................................................................................7
ITRIP (Over-current detection function, Pin 21) ..........................................................................................7
VDD, VSS (control side supply and reference, Pin 22, 23) .........................................................................7
VB1,2,3 and VS1,2,3 (High side supplies, Pin 1, 2, 4, 5, 7, 8) ....................................................................7
VRU, VRV, VRW (low side emitter, Pin 12, 13, 14) ....................................................................................7
V+ (positive bus input voltage, Pin 10) ........................................................................................................7
Absolute Maximum Ratings.............................................................................................................................8
Module Section ............................................................................................................................................8
IGBT and Diode Section..............................................................................................................................8
Control Section ............................................................................................................................................9
Recommended Operation Conditions ............................................................................................................9
Static Characteristics .....................................................................................................................................10
Dynamic Characteristics ................................................................................................................................11
Integrated Components .................................................................................................................................12
Characteristics ................................................................................................................................................13
Test Circuits ....................................................................................................................................................15
Package Outline IKCS22F60B2A...................................................................................................................17
Package Outline IKCS22F60B2C...................................................................................................................18
Data Sheet
3/18
Rev. 2.3, July 2009
CIPOS™ IKCS22F60B2A
IKCS22F60B2C
CIPOS™
Control integrated Power System
Single In-Line Intelligent Power Module
3Φ-bridge 600V / 22A @ 25°C
Features
Description
• Fully compliant to 3.3V and 5V microcontrollers
The CIPOS™ module family offers the chance for
integrating various power and control components
to increase reliability, optimize PCB size and
system costs.
• Fully isolated Single In-Line moulded module
®
• Infineon TrenchStop IGBTs with lowest VCE(sat)
• Optimally adapted diode for low EMI
• bootstrap diode and capacitor are integrated
• Rugged SOI gate driver technology with
stability against transient and negative voltage
• Temperature sense
• Undervoltage lockout at all channels
• Matched propagation delay for all channels
• Low side emitter pins accessible for all phase
current monitoring (open emitter)
• Cross-conduction prevention
• Lead-free terminal plating; RoHS compliant
• Qualified
according
to
JEDEC
1
(high
temperature stress tests for 1000h) for target
applications
This SIL-IPM is designed to control AC motors in
variable speed drives for applications like air
conditioning, compressors and washing machines.
The package concept is specially adapted to
power applications, which need extremely good
thermal conduction and electrical isolation, but
also EMI-save control and overload protection.
®
The features of Infineon TrenchStop IGBTs and
freewheeling diodes are combined with a new
optimized Infineon SOI gate driver for excellent
electrical performance. The integrated pull up
structure ensures safe operation even without
external pull up resistors.
System Configuration
®
• 3 halfbridges with TrenchStop
diodes
IGBT & FW-
• 3Φ SOI gate driver
• Bootstrap diodes for high side supply
Target Applications
• Integrated 100nF bootstrap capacitance
• Washing machines
• Temperature sensor, passive components for
adaptions
• Consumer Fans and Consumer Compressors
• Isolated heatsink
• Creepage distance typ. 3.2mm
Certification
UL 1577 (UL file E314539)
1
J-STD-020 and JESD-022
Data Sheet
4/18
Rev. 2.3, July 2009
CIPOS™ IKCS22F60B2A
IKCS22F60B2C
Internal Electrical Schematic
V+ (10)
Tr1, U-HS
D1
Cge = 390 pF
Tr3, V-HS
D3
Cge1
Cge5
Cge3
Tr2, U-LS
D2
Cge2
Tr5, W-HS
D5
Tr4, V-LS
D4
Tr6, W-LS
D6
Cge4
Cge6
VRU (12)
VRV (13)
VRW (14)
U, VS1 (8)
V, VS2 (5)
W, VS3 (2)
RH1
RL1
RH2
RL2
RH3
RL3
VB3 (1)
VB2 (4)
VB1 (7)
CbsH1
CbsH2
CbsH3
Dbs1Dbs3
Rbs
VDD (22)
VCC
/HIN1 (15)
/HIN2 (16)
/HIN3 (17)
/HIN1
/HIN2
/HIN3
/LIN1 (18)
/LIN2 (19)
/LIN3 (20)
/LIN1
/LIN2
/LIN3
Driver-IC
R2-R8
ITRIP (21)
RTS
R1
TEMP (24)
VSS (23)
C1
Dz
C2
Figure 1: Internal Schematic
Data Sheet
5/18
Rev. 2.3, July 2009
CIPOS™ IKCS22F60B2A
IKCS22F60B2C
Pin Assignment
Pin Number
Pin Name
Pin Description
1
VB3
high side floating IC supply voltage
2
W,VS3
motor output W, high side floating IC supply offset voltage
3
n.a.
None
4
VB2
high side floating IC supply voltage
5
V,VS2
motor output V, high side floating IC supply offset voltage
6
n.a.
None
7
VB1
high side floating IC supply voltage
8
U,VS1
motor output U, high side floating IC supply offset voltage
9
n.a.
None
10
V+
positive bus input voltage
11
n.a.
None
12
VRU
low side emitter
13
VRV
low side emitter
14
VRW
low side emitter
15
/HIN1
input gate driver high side 1/U
16
/HIN2
input gate driver high side 2/V
17
/HIN3
input gate driver high side 3/W
18
/LIN1
input gate driver low side 1/U
19
/LIN2
input gate driver low side 2/V
20
/LIN3
input gate driver low side 3/W
21
ITRIP
input overcurrent shutdown
22
VDD
module control supply
23
VSS
module negative supply
24
TEMP
temperature monitoring
Pin Description
/HIN1,2,3 and /LIN1,2,3 (Low side and high side
control pins, Pin 15 - 20)
These pins are active low and they are
responsible for the control of the integrated IGBT
The Schmitt-trigger input threshold of them are
such to guarantee LSTTL and CMOS compatibility
down to 3.3V controller outputs. The maximum
voltage at these pins is 5.5V and therefore fully
compliant to 3.3V-microcontrollers. Pull-up resistor
of about 75 kΩ is internally provided to pre-bias
inputs during supply start-up and a zener clamp is
provided for pin protection purposes. Input
schmitt-trigger and noise filter provide beneficial
noise rejection to short input pulses.
It is recommended for proper work of CIPOS™
not to provide input pulse-width lower than 1us.
The integrated gate drive provides additionally a
shoot through prevention capability which avoids
the simultaneous on-state of two gate drivers of
the same leg (i.e. HO1 and LO1, HO2 and LO2,
HO3 and LO3).
Figure 2: Input pin structure
Data Sheet
6/18
Rev. 2.3, July 2009
CIPOS™ IKCS22F60B2A
IKCS22F60B2C
A minimum deadtime insertion of typ 380ns is also
provided, in order to reduce cross-conduction of
the external power switches.
switches from critically low gate voltage levels
during on-state and therefore from excessive
power dissipation.
TEMP (temperature NTC, Pin 24)
The TEMP terminal provides direct access to the
NTC, which is referenced to VSS. An external pullup resistor connected to +5V ensures, that the
resulting voltage can be directly connected to the
microcontroller.
VB1,2,3 and VS1,2,3 (High side supplies, Pin 1,
TEMP
2, 4, 5, 7, 8)
VB to VS is the high side supply voltage. The high
side circuit can float with respect to VSS following
the external high side power device emitter/source
voltage.
Due to the low power consumption, the floating
driver stage is supplied by an integrated bootstrap
circuit connected to VDD. This includes also
integrated bootstrap capacitors of 100 nF at each
floating supply, which are located very close to the
gate drive circuit.
RNTC
VSS
CIPOS™
Figure 3: Internal Circuit at pin TEMP
ITRIP (Over-current detection function, Pin 21)
CIPOS™ provides an over-current detection
function by connecting the ITRIP input with the
motor current feedback. The ITRIP comparator
threshold (typ 0.46V) is referenced to VSS ground.
A input noise filter (typ: tITRIPMIN = 220ns) prevents
the driver to detect false over-current events.
Over-current detection generates a hard shut
down of all outputs of the gate driver after the
shutdown propagation delay of typically 1100ns.
The fault-clear time is set to typically to 4.7ms.
VDD, VSS (control side supply and reference,
Pin 22, 23)
VDD is the low side supply and it provides power
both to input logic and to low side output power
stage. Input logic is referenced to VSS ground as
well as the under-voltage detection circuit.
The under-voltage circuit enables the device to
operate at power on when a supply voltage of at
least a typical voltage of VDDUV+ = 12.1 V is at least
present.
The IC shuts down all the gate drivers power
outputs, when the VCC supply voltage is below
VDDUV- = 10.4 V. This prevents the external power
Data Sheet
7/18
Figure 4: Operating states
The under-voltage detection operates with a rising
supply threshold of typical VBSUV+ = 12.1 V and a
falling threshold of VDDUV- = 10.4 V according to
Figure 4.
VS1,2,3 provide a high robustness against
negative voltage in respect of VSS of -50 V. This
ensures very stable designs even under rough
conditions.
VRU, VRV, VRW (low side emitter, Pin 12, 13,
14)
The low side emitters are available for current
measurements of each phase leg. It is
recommended to keep the connection to pin VSS
as short as possible in order to avoid unnecessary
inductive voltage drops.
V+ (positive bus input voltage, Pin 10)
The high side IGBT are connected to the bus
voltage. It is recommended, that the bus voltage
does not exceed 500 V.
Rev. 2.3, July 2009
CIPOS™ IKCS22F60B2A
IKCS22F60B2C
Absolute Maximum Ratings
(Tc = 25°C, VDD = 15V, if not stated otherwise)
Module Section
Description
Condition
Storage temperature range
1
Operating temperature control PCB
Symbol
Value
Unit
min
max
Tstg
-40
125
°C
TPCB
-
125
°C
Tsol
-
260
°C
2500
-
V
Solder temperature
Wave soldering,
1.6mm (0.063in.)
from case for 10s
Insulation test voltage
RMS, f=50Hz, t =1min VISOL
Mounting torque
M3 screw and washer MS
-
0.6
Nm
Mounting pressure on surface
Package flat on
mounting surface
-
150
N/mm²
3.1
-
mm
Creepage distance
NMC
dS
Max. peak power of bootstrap
resistor
tp = 100µs
Tc= 100°C
90
PBRpeak
W
IGBT and Diode Section
Description
Condition
Unit
max
VCES
600
-
V
Tc = 25°C,TvJ <150°C
Tc = 80°C,TvJ <150°C
Iu, Iv, Iw
-22
-14
22
14
A
Tp limited by TvJmax
Iu, Iv, Iw
-45
45
A
Short circuit withstand time
VDD = 15V,VDC = 400V,
TvJ = 150°C
tsc
-
5
µs
Power dissipation per IGBT
Tc = 25°C
Ptot
-
59
W
Operating junction temperature range
IGBT
Diode
TvjI
TvjD
-40
-40
150
150
°C
DC output current
Repetitive peak collector current
2
2
Value
min
Max. Blocking Voltage
1
Symbol
Monitored by pin 24
Allowed number of short circuits: <1000; time between short circuits: >1s.
Data Sheet
8/18
Rev. 2.3, July 2009
CIPOS™ IKCS22F60B2A
IKCS22F60B2C
Description
Condition
Value
Symbol
Unit
min
typ
max
Single IGBT thermal resistance,
junction-case
RthJC
-
-
2.1
Single diode thermal resistance,
junction-case
RthJCD
-
-
2.7
K/W
Control Section
Description
Condition
Symbol
Unit
Value
min
max
V
Module supply voltage
VDD
-1
20
High side floating supply voltage
(VB vs. VS)
VBS
-1
20
VDD-VBS-6
VDD-VBS-50
600
VIN,ITRIP
-1
10
VIN
-1
5.5
Operating junction temperature
TJ,IC
-
125
°C
Max. switching frequency
fPWM
-
20
kHz
High side floating IC supply offset
voltage
tp < 500ns
ITRIP Input voltage
/HIN, /LIN Input voltage
VIN = float
1
VS1,2,3
Recommended Operation Conditions
All voltages are absolute voltages referenced to VSS -Potential unless otherwise specified.
Description
Value
Symbol
Unit
min
max
High side floating supply offset voltage
VS
-3
500
High side floating supply voltage (VB vs. VS)
VBS
12.5
17.5
High side output voltage (VHO vs. VS)
VHO
0
VBS
Low side power supply
VDD
12.5
17.5
Logic input voltages LIN, HIN, ITRIP
VIN
0
5
1
V
Monitored by pin 24
Data Sheet
9/18
Rev. 2.3, July 2009
CIPOS™ IKCS22F60B2A
IKCS22F60B2C
Static Characteristics
(Tc = 25°C, VDD = 15V, if not stated otherwise)
Description
Condition
Collector-Emitter breakdown
voltage
VIN = 5V, IC = 0.25mA
V(BR)CES
Collector-Emitter saturation voltage
Iout = +/- 15A
TvJ = 25°C
TvJ = 150°C
VCE(sat)
VIN = 5V, Iout = +/- 15A
TvJ = 25°C
TvJ = 150°C
VF
VCE = 600V, VIN = 5V
TvJ = 25°C
TvJ = 150°C
tSC ≤ 5µs
VCC = 400V, TvJ = 150°C
ICES
Diode forward voltage
Zero gate voltage collector current
1
Short circuit collector current
Value
Symbol
Unit
min
Typ
max
600
-
-
-
1.65
1.9
2.1
-
1.7
1.6
2.05
-
-
40
1000
-
95
-
A
V
V
V
IC(SC)
µA
2
Logic "0" input voltage (LIN,HIN)
VIH
1.7
2.1
2.4
V
Logic "1" input voltage (LIN,HIN)
VIL
0.7
0.9
1.1
V
ITRIP positive going threshold
VIT,TH+
360
460
540
mV
ITRIP input hysteresis
VIT,HYS
45
75
-
mV
VDD and VBS supply undervoltage
positive going threshold
VDDUV+
2
VBSUV+
11.0
12.1
12.8
V
VDD and VBS supply undervoltage
negative going threshold
VDDUV2
VBSUV-
9.5
10.4
11.0
V
VCC and VBS supply undervoltage
lockout hysteresis
VDDUVH
2
VBSUVH
1.2
1.7
-
V
Input clamp voltage (/HIN, /LIN)
IIN = 4 mA
VINCLAMP
-
10.4
13
V
Input clamp voltage (ITRIP)
IIN = 4 mA
VINCLAMP
9
10.6
13
V
Quiescent VBx supply current (VBx
only)
VHIN = low
IQB
-
300
550
µA
Quiescent VDD supply current
(VDD only)
VIN = float
IQDD
-
2.4
3.4
mA
Input bias current
VIN = 5V
IIN+
-
55
100
µA
Input bias current
VIN = 0V
IIN-
-
220
400
µA
ITRIP Input bias current
VITRIP = 5V
IITRIP+
-
75
120
µA
Leakage current of high side
Tj,IC = 125°C
ILVS
-
30
-
µA
2
1
Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Test is not subject of product test, verified by characterisation
Data Sheet
10/18
Rev. 2.3, July 2009
CIPOS™ IKCS22F60B2A
IKCS22F60B2C
Dynamic Characteristics
(Tc = 25°C, VDD = 15V, if not stated otherwise)
Description
Condition
Value
Symbol
Unit
min
typ
max
Turn-on propagation delay
VLIN,HIN = 0V; Iout = 15A,
VDC = 300V
td(on)
-
718
-
ns
Turn-on rise time
VLIN,HIN = 5V, Iout = 15A,
VDC = 300V
tr
-
61
-
ns
Turn-off propagation delay
VLIN,HIN = 5V; Iout = 15A,
VDC = 300V
td(off)
-
937
-
ns
Turn-off fall time
VLIN,HIN = 0V, Iout = 15A,
VDC = 300V
tf
-
74
-
ns
Shutdown propagation delay ITRIP
VITRIP = 1V, Iu, Iv, Iw =15A
tITRIP
-
1100
-
ns
Input filter time ITRIP
VITRIP = 1V
tITRIPmin
155
210
380
ns
Input filter time at LIN for turn on
and off and input filter time at HIN
for turn on only
VLIN,HIN = 0 V & 5V
tFILIN
120
270
-
ns
Input filter time at HIN for turn off
VHIN = 5V
tFILIN1
-
220
-
ns
Input filter time at HIN for turn off
VHIN = 5 V
tFILIN2
-
400
-
ns
Fault clear time after ITRIP-fault
VLIN,HIN = 0 V & 5V
VITRIP = 0 V
tFLTCLR
-
4.7
-
ms
Min. deadtime between low side
and high side
DTPWM
-
1.5
-
µs
Deadtime of gate drive circuit
DTIC
IGBT Turn-on Energy (includes
reverse recovery of diode)
Iout = 15A, VDC = 300V
TvJ = 25°C
TvJ = 150°C
Eon
IGBT Turn-off Energy
Iout = 15A, VDC = 300V
TvJ = 25°C
TvJ = 150°C
Eoff
Iout = 15A, VDC = 300V
TvJ = 25°C
TvJ = 150°C
Erec
Diode recovery Energy
Data Sheet
11/18
380
ns
mJ
-
0.69
0.93
-
-
0.27
0.37
-
-
0.07
0.17
-
mJ
mJ
Rev. 2.3, July 2009
CIPOS™ IKCS22F60B2A
IKCS22F60B2C
Integrated Components
Description
Condition
Resistor (Tol.: ± 5 %)
1
1
Symbol
Value
Unit
min
typ
max
Rbs
-
10
-
Ω
NTC Resistor (Tol.: ± 5 %)
TNTC = 25°C
RTS
-
100
-
kΩ
B-Constant of NTC (Tol.: 3%)
TNTC = 25°C
B25
-
4250
-
K
Bootstrap diode forward voltage
IFDbs = 100mA
VFDbs
-
1.8
-
V
Capacitor
C1
-
100
-
nF
Capacitor
Cgex
-
1.2
-
Bootstrap Capacitor
CbsHx
-
100
-
Symbols according to Figure 1
Data Sheet
12/18
Rev. 2.3, July 2009
CIPOS™ IKCS22F60B2A
IKCS22F60B2C
Characteristics
(TC = 25°C, VDD = 15V, if not stated otherwise)
40A
40A
VGE=25°C
35A
125°C
150°C
30A
IF, forward CURRENT
IC, COLLECTOR CURRENT
35A
25A
20A
15A
30A
25A
20A
15A
10A
10A
5A
5A
0A
VGE=25°C
125°C
150°C
0A
0V
1V
2V
3V
0V
VCE, COLLECTOR EMITTER VOLTAGE
2V
VF FORWARD VOLTAGE
Figure 6. Typical diode forward current as a
function of forward voltage
Figure 5. Typical IGBT output characteristic
(VDD = 15V)
td(off)
1000ns
1V
td(off)
1000ns
td(on)
tr
t, SWITCHING TIMES
t, SWITCHING TIMES
td(on)
100ns
tf
tf
100ns
tr
10ns
0A
10A
20A
30A
40A
IC, COLLECTOR CURRENT
50°C
75°C
100°C
125°C
TvJ, JUNCTION TEMPERATURE
Figure 8. Typical switching times as a
function of junction temperature
(inductive load, VCE = 300V, IC = 15A
Dynamic test circuit in Figure A)
Figure 7. Typical switching times as a
function of collector current
(inductive load, TJ=150°C,
VCE = 300V
Dynamic test circuit in Figure A)
Data Sheet
25°C
13/18
Rev. 2.3, July 2009
CIPOS™ IKCS22F60B2A
IKCS22F60B2C
7.00mJ
0.90mJ
0.70mJ
E, SWITCHING ENERGY
E, SWITCHING ENERGY
5.00mJ
4.00mJ
3.00mJ
2.00mJ
0.60mJ
0.50mJ
Eoff
0.40mJ
0.30mJ
0.20mJ
Eoff
Erec
0.10mJ
1.00mJ
Erec
0.00mJ
25°C
0.00mJ
0A
5A 10A 15A 20A 25A 30A 35A 40A
IC, COLLECTOR CURRENT
75°C
100°C
125°C
Figure 10. Typical switching energy losses as
a function of junction temperature
(inductive load, VCE = 300V, IC = 15A
Dynamic test circuit in Figure A)
ZthJC, TRANSIENT THERMAL RESISTANCE
1000kOhm
100kOhm
10kOhm
min
typ
max
1kOhm
50°C
TvJ, JUNCTION TEMPERATURE
Figure 9. Typical switching energy losses
as a function of collector current
(inductive load, TJ = 150°C,
VCE = 300V
Dynamic test circuit in Figure A)
RTS, NTC resistance
Eon
0.80mJ
Eon
6.00mJ
0
10 K/W
Single Pulse
IGBT
Diode
-1
10 K/W
-2
-25°C
0°C
25°C
50°C
75°C
100°C
TNTC, NTC TEMPERATURE
10µs 100µs 1ms 10ms 100ms
tP, PULSE WIDTH
Figure 11. Characteristic of NTC as a
function of NTC temperature
Data Sheet
10 K/W
100ns 1µs
Figure 12. Transient thermal impedance as a
function of pulse width
(D=tP/T)
14/18
Rev. 2.3, July 2009
CIPOS™ IKCS22F60B2A
IKCS22F60B2C
Test Circuits
t Erec
Erec = ∫ vD ⋅i F dt
0
Figure B: Definition of diodes switching characteristics
Figure A: Dynamic test circuit
Leakage inductance Lσ =180nH
Stray capacitance C σ =39pF
Figure C: Definition of ITIRP propagation delay
t Eoff
Eoff =
t Eon
∫ vCEx ⋅i Cx dt
Eon = ∫ vCEx ⋅i Cx dt
0
0
Figure D: Switching times definition and switching energy definition
Data Sheet
15/18
Rev. 2.3, July 2009
CIPOS™ IKCS22F60B2A
IKCS22F60B2C
tFILIN
tFILIN
LIN
HIN
LIN
on
off
on
off
high
HO
LO
LO
low
Figure E: Short Pulse suppression
Note: There may occur discolourations on the copper surface without any effect of the thermal properties.
Data Sheet
16/18
Rev. 2.3, July 2009
CIPOS™ IKCS22F60B2A
IKCS22F60B2C
Package Outline IKCS22F60B2A
Description
Condition
Weight
Value
Symbol
mP
Unit
min
typ
max
-
17
-
G
Note: There may occur discolourations on the copper surface without any effect of the thermal properties.
Data Sheet
17/18
Rev. 2.3, July 2009
CIPOS™ IKCS22F60B2A
IKCS22F60B2C
Package Outline IKCS22F60B2C
Description
Condition
Weight
Symbol
mP
Unit
Value
min
typ
max
-
17
-
g
Note: There may occur discolourations on the copper surface without any effect of the thermal properties.
Data Sheet
18/18
Rev. 2.3, July 2009