Data Sheet, July 2009 Control integrated Power System (CIPOS™) IKCS22F60F2A IKCS22F60F2C http://www.infineon.com/cipos Power Management & Drives N e v e r s t o p t h i n k i n g . CIPOS™ IKCS22F60F2A IKCS22F60F2C Revision History: Previous Version: Page 4 10 11 2009-07 Rev.2.1 2 Subjects (major changes since last revision) Added UL certification Change VIT,HYS Revised energy units Authors: W. Frank, H. Rettinger Edition 2008-09 Published by Infineon Technologies AG 85579 Neubiberg, Germany © Infineon Technologies AG 7/28/09. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office or representatives (http://www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office or representatives. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. ® TRENCHSTOP is a registered trademark of Infineon Technologies AG. CIPOS™, CoolMOS™, CoolSET™, DuoPack™ and thinQ!™ are trademarks of Infineon Technologies AG. Data Sheet 2/18 Rev. 2.1, July 2009 CIPOS™ IKCS22F60F2A IKCS22F60F2C Table of Contents CIPOS™ Control integrated Power System ..................................................................................................4 Features........................................................................................................................................................4 Target Applications .....................................................................................................................................4 Description ...................................................................................................................................................4 System Configuration .................................................................................................................................4 Internal Electrical Schematic...........................................................................................................................5 Pin Assignment.................................................................................................................................................6 Pin Description ............................................................................................................................................6 /HIN1,2,3 and /LIN1,2,3 (Low side and high side control pins, Pin 15 - 20) ................................................6 /FLT-TEMP (temperature NTC, Pin 24) ......................................................................................................7 ITRIP (Over-current detection function, Pin 21) ..........................................................................................7 VDD, VSS (control side supply and reference, Pin 22, 23) .........................................................................7 VB1,2,3 and VS1,2,3 (High side supplies, Pin 1, 2, 4, 5, 7, 8) ....................................................................7 VRU, VRV, VRW (low side emitter, Pin 12, 13, 14) ....................................................................................7 V+ (positive bus input voltage, Pin 10) ........................................................................................................7 Absolute Maximum Ratings.............................................................................................................................8 Module Section ............................................................................................................................................8 IGBT and Diode Section..............................................................................................................................8 Control Section ............................................................................................................................................9 Recommended Operation Conditions ............................................................................................................9 Static Parameters............................................................................................................................................10 Dynamic Parameters ......................................................................................................................................12 Integrated Components .................................................................................................................................13 Typical Application .........................................................................................................................................13 Characteristics ................................................................................................................................................14 Test Circuits and Parameter Definition ........................................................................................................16 Package Outline IKCS22F60F2A ...................................................................................................................18 Package Outline IKCS22F60F2C ...................................................................................................................19 Data Sheet 3/18 Rev. 2.1, July 2009 CIPOS™ IKCS22F60F2A IKCS22F60F2C CIPOS™ Control integrated Power System Single In-Line Intelligent Power Module 3Φ-bridge 600V / 22A @ 25°C Features Description • DCB isolated Single In-Line molded module The CIPOS™ module family offers the chance for integrating various power and control components to increase reliability, optimize PCB size and system costs. • FAULT signal ® • TrenchStop IGBTs with lowest VCE(sat) • Optimal adapted antiparallel diode for low EMI • Integrated bootstrap diode and capacitor • Rugged SOI gate driver technology with stability against transient and negative voltage • Fully compliant to 3.3V and 5V microcontrollers • Temperature sense • Undervoltage lockout at all channels • Matched propagation delay for all channels • Low side emitter pins accessible for all phase current monitoring (open emitter) • Cross-conduction prevention System Configuration • Lead-free terminal plating; RoHS compliant 1 This SIL-IPM is designed to control AC motors in variable speed drives for applications like air conditioning, compressors and washing machines. The package concept is specially adapted to power applications, which need extremely good thermal conduction and electrical isolation, but also EMI-save control and overload protection. ® The features of Infineon TrenchStop IGBTs and antiparallel diodes are combined with a new optimized Infineon SOI gate driver for excellent electrical performance. The product provides a FAULT signal, which is significantly simplifying the system. ® temperature stress tests for 1000h) for target • 3 halfbridges with TrenchStop diodes applications • 3Φ SOI gate driver • Qualified according to JEDEC (high IGBT & FW- • Bootstrap diodes for high side supply Target Applications • Integrated 100nF bootstrap capacitance • Washing machines • Temperature sensor, passive components for adaptions • Consumer Fans and Consumer Compressors • Isolated heatsink • Creepage distance typ. 3.2mm Certification UL 1577 (UL file E314539) 1 J-STD-020 and JESD-022 Data Sheet 4/18 Rev. 2.1, July 2009 CIPOS™ IKCS22F60F2A IKCS22F60F2C Internal Electrical Schematic V+ (10) Tr1, U-HS D1 Cge = 390 pF Cge1 Tr3, V-HS D3 Cge5 Cge3 Tr2, U-LS D2 Tr5, W-HS D5 Tr4, V-LS D4 Tr6, W-LS D6 Cge4 Cge6 Cge2 VRU (12) VRV (13) VRW (14) U, VS1 (8) V, VS2 (5) W, VS3 (2) RH1 RL1 RH2 RL2 RH3 RL3 VB3 (1) VB2 (4) VB1 (7) CbsH1 CbsH2 CbsH3 Dbs1Dbs3 Rbs VDD (22) VCC /HIN1 (15) /HIN2 (16) /HIN3 (17) /HIN1 /HIN2 /HIN3 /LIN1 (18) /LIN2 (19) /LIN3 (20) /LIN1 /LIN2 /LIN3 Driver-IC R2-R8 ITRIP (21) R1 /FLTTEMP (24) VSS (23) RTS C1 Dz C2 Figure 1: Internal Schematic Data Sheet 5/18 Rev. 2.1, July 2009 CIPOS™ IKCS22F60F2A IKCS22F60F2C Pin Assignment Pin Number Pin Name Pin Description 1 VB3 high side floating IC supply voltage 2 W,VS3 motor output W, high side floating IC supply offset voltage 3 n.a. None 4 VB2 high side floating IC supply voltage 5 V,VS2 motor output V, high side floating IC supply offset voltage 6 n.a. None 7 VB1 high side floating IC supply voltage 8 U,VS1 motor output U, high side floating IC supply offset voltage 9 n.a. None 10 V+ positive bus input voltage 11 n.a. None 12 VRU low side emitter 13 VRV low side emitter 14 VRW low side emitter 15 /HIN1 input gate driver high side 1/U 16 /HIN2 input gate driver high side 2/V 17 /HIN3 input gate driver high side 3/W 18 /LIN1 input gate driver low side 1/U 19 /LIN2 input gate driver low side 2/V 20 /LIN3 input gate driver low side 3/W 21 ITRIP input overcurrent shutdown 22 VDD module control supply 23 VSS module negative supply 24 /FLT-TEMP Fault indication and temperature monitoring Pin Description /HIN1,2,3 and /LIN1,2,3 (Low side and high side control pins, Pin 15 - 20) These pins are active low and they are responsible for the control of the integrated IGBT The Schmitt-trigger input threshold of them are such to guarantee LSTTL and CMOS compatibility down to 3.3V controller outputs. The maximum voltage at these pins is 6V and therefore fully compliant to 3.3V-microcontrollers. Pull-up resistor of about 75 kΩ is internally provided to pre-bias inputs during supply start-up and a zener clamp is provided for pin protection purposes. Input schmitt-trigger and noise filter provide beneficial noise rejection to short input pulses. It is recommended for proper work of CIPOS™ not to provide an input pulse-width and PWM deadtimes lower than 1us. The integrated gate drive provides additionally a shoot through prevention capability which avoids the simultaneous on-state of two gate drivers of the same leg (i.e. HO1 and LO1, HO2 and LO2, HO3 and LO3). Figure 2: Input pin structure Data Sheet 6/18 Rev. 2.1, July 2009 CIPOS™ IKCS22F60F2A IKCS22F60F2C A minimum dead time insertion of typ 380ns is also provided, in order to reduce cross-conduction of the external power switches. /FLT-TEMP (temperature NTC, Pin 24) The TEMP terminal provides direct access to the NTC, which is referenced to VSS. An external pullup resistor connected to +5V ensures, that the resulting voltage can be directly connected to the microcontroller. VDDUV- = 10.4 V. This prevents the external power switches from critically low gate voltage levels during on-state and therefore from excessive power dissipation. VB1,2,3 and VS1,2,3 (High side supplies, Pin 1, 2, 4, 5, 7, 8) VB to VS is the high side supply voltage. The high side circuit can float with respect to VSS following the external high side power device emitter/source voltage. Due to the low power consumption, the floating driver stage is supplied by an integrated bootstrap circuit connected to VDD. This includes also integrated bootstrap capacitors of 100 nF at each floating supply, which are located very close to the Figure 3: Internal Circuit at pin TEMP The same pin indicates a module failure in case of under voltage at pin VDD or in case of triggered over current detection at ITRIP. A pull-up resistor is externally required to bias the NTC. No temperature information is available during fault. ITRIP (Over-current detection function, Pin 21) CIPOS™ provides an over-current detection function by connecting the ITRIP input with the motor current feedback. The ITRIP comparator threshold (typ 0.46V) is referenced to VSS ground. A input noise filter (typ: tITRIPMIN = 220ns) prevents the driver to detect false over-current events. Over-current detection generates a hard shut down of all outputs of the gate driver after the shutdown propagation delay of typically 900ns. The fault-clear time is set to typically to 4.7ms. Figure 4: Input filter timing diagram gate drive circuit. The under-voltage detection operates with a rising supply threshold of typical VBSUV+ = 12.1 V and a falling threshold of VDDUV- = 10.4 V according to Figure 4. VS1,2,3 provide a high robustness against negative voltage in respect of VSS of -50 V. This ensures very stable designs even under rough conditions. VRU, VRV, VRW (low side emitter, Pin 12, 13, VDD, VSS (control side supply and reference, Pin 22, 23) VDD is the low side supply and it provides power both to input logic and to low side output power stage. Input logic is referenced to VSS ground as well as the under-voltage detection circuit. 14) The low side emitters are available for current measurements of each phase leg. It is recommended to keep the connection to pin VSS as short as possible in order to avoid unnecessary inductive voltage drops. The under-voltage circuit enables the device to operate at power on when a supply voltage of at least a typical voltage of VDDUV+ = 12.1 V is at least present. V+ (positive bus input voltage, Pin 10) The high side IGBT are connected to the bus voltage. It is recommended, that the bus voltage does not exceed 500 V. The IC shuts down all the gate drivers power outputs, when the VCC supply voltage is below Data Sheet 7/18 Rev. 2.1, July 2009 CIPOS™ IKCS22F60F2A IKCS22F60F2C Absolute Maximum Ratings (Tc = 25°C, if not stated otherwise) Module Section Description Condition Symbol Value Min Storage temperature range 1 Operating temperature control PCB Unit max Tstg -40 125 °C TPCB - 125 °C Tsol - 260 °C Solder temperature Wave soldering, 1.6mm (0.063in.) from case for 10s Insulation test voltage RMS, f=50Hz, t =1min VISOL 2500 - V Mounting torque M3 screw and washer MS - 0.6 Nm Mounting pressure on surface Package flat on mounting surface NMC - 150 N/mm² dS 3.1 - mm 90 W Creepage distance Max. peak power of bootstrap resistor tp = 100µs Tc= 100°C PBRpeak IGBT and Diode Section Description Condition Unit max VCES 600 - V Tc = 25°C,TvJ <150°C Tc = 80°C,TvJ <150°C Iu, Iv, Iw -22 -14 22 14 A Tp limited by TvJmax Iu, Iv, Iw -45 45 A Short circuit withstand time VDD=15V, VDC= 400V, TvJ = 150°C tsc - 5 µs Power dissipation per IGBT Tc = 25°C Ptot - 59 W Operating junction temperature range IGBT Diode TvjI TvjD -40 -40 150 150 °C DC output current Repetitive peak collector current 2 2 Value min Max. Blocking Voltage 1 Symbol Monitored by pin 24 Allowed number of short circuits: <1000; time between short circuits: >1s. Data Sheet 8/18 Rev. 2.1, July 2009 CIPOS™ IKCS22F60F2A IKCS22F60F2C Description Condition Value Symbol min typ Unit max Single IGBT thermal resistance, junction-case RthJC - - 2.1 Single diode thermal resistance, junction-case RthJCD - - 2.7 K/W Control Section Description Condition Value Symbol Unit min max Module supply voltage VDD -1 20 High side floating supply voltage (VB vs. VS) VBS -1 20 VDD-VBS-6 VDD-VBS-50 600 High side floating IC supply offset voltage tp < 500ns VS1,2,3 V ITRIP input voltage VIN,ITRIP -1 10 /FLT-TEMP Input voltage VIN,FLT -1 20 VIN - 5.5 IIN,FLT - 5 mA Operating junction temperature TJ,IC - 125 °C Max. switching frequency fPWM - 20 kHz /HIN, /LIN Input voltage VIN = float /FLT-TEMP Input current 1 Recommended Operation Conditions All voltages are absolute voltages referenced to VSS -Potential unless otherwise specified. Description Value Symbol Unit min max High side floating supply offset voltage VS -3 500 High side floating supply voltage (VB vs. VS) VBS 12.5 17.5 Low side power supply VDD 12.5 17.5 Logic input voltages LIN, HIN, ITRIP VIN 0 5 1 V Monitored by pin 24 Data Sheet 9/18 Rev. 2.1, July 2009 CIPOS™ IKCS22F60F2A IKCS22F60F2C Static Parameters (Tc = 25°C, VDD = 15V, if not stated otherwise) Description Condition Value Symbol min Collector-Emitter breakdown voltage VIN = 5V, IC = 0.25mA V(BR)CES Collector-Emitter saturation voltage Iout = +/- 15A TvJ = 25°C TvJ = 150°C VCE(sat) VIN = 5V, Iout = +/- 15A TvJ = 25°C TvJ = 150°C VF VCE = 600V, VIN = 5V TvJ = 25°C TvJ = 150°C ICES tSC ≤ 5µs VCC = 400V, TvJ = 150°C IC(SC) Diode forward voltage Zero gate voltage collector current of IGBT 1 Short circuit collector current typ Unit max 600 V V - 1.65 1.9 2.1 - 1.7 1.6 2.05 - - 40 1000 - 95 - A V µA 2 Logic "0" input voltage (LIN,HIN) VIH 1.7 2.1 2.4 V Logic "1" input voltage (LIN,HIN) VIL 0.7 0.9 1.1 V ITRIP positive going threshold VIT,TH+ 360 460 540 mV ITRIP input hysteresis VIT,HYS 45 75 - mV VDD and VBS supply undervoltage positive going threshold VDDUV+ 2 VBSUV+ 11.0 12.1 12.8 V VDD and VBS supply undervoltage negative going threshold VDDUV2 VBSUV- 9.5 10.4 11.0 V VCC and VBS supply undervoltage lockout hysteresis VDDUVH 2 VBSUVH 1.2 1.7 - V Input clamp voltage (/HIN, /LIN) IIN = 4mA VINCLAMP 9.0 10.4 13.0 V Input clamp voltage (ITRIP) IIN = 4mA VINCLAMP2 9.0 10.6 13.0 V Quiescent VBx supply current (VBx only) VHIN = low IQB - 300 550 µA Quiescent VDD supply current (VDD only) VIN = float IQDD - 2.4 3.4 mA Input bias current VIN = 5V IIN+ - 55 100 µA Input bias current VIN = 0V IIN- - 220 400 µA ITRIP Input bias current VITRIP = 5V IITRIP+ - 75 120 µA Leakage current of high side Tj,IC = 125°C ILVS - 30 - µA FAULT low on resistance of the pull down transistors VFLT = 0.5V, VITRIP = 1V Ron,FLT - 56 - Ω 2 1 Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Test is not subject of product test, verified by characterisation Data Sheet 10/18 Rev. 2.1, July 2009 CIPOS™ IKCS22F60F2A IKCS22F60F2C Dynamic Parameters (Tc = 25°C, VDD = 15V, if not stated otherwise) Description Condition Value Symbol Unit min typ max Turn-on propagation delay High side or low side VLIN,HIN = 0V; Iout = 15A, VDC = 300V td(on) - 718 - Turn-on rise time High side or low side VLIN,HIN = 5V, Iout = 15A, VDC = 300V tr - 61 - Turn-off propagation delay High side or low side VLIN,HIN = 5V; Iout = 15A, VDC = 300V td(off) - 937 - Turn-off fall time High side or low side VLIN,HIN = 0V, Iout = 15A, VDC = 300V tf - 74 - Shutdown propagation delay ITRIP VITRIP = 1V, Iu, Iv, Iw =15A tITRIP - 1100 - Input filter time ITRIP VITRIP = 1V tITRIPmin 155 210 380 Propagation delay ITRIP to FAULT VITRIP = 1V tFLT Input filter time at LIN for turn on and off and input filter time at HIN for turn on only VLIN,HIN = 0 V & 5V tFILIN 120 270 - Input filter time at HIN for turn off VHIN = 5V tFILIN1 - 220 - Input filter time at HIN for turn off VHIN = 5 V tFILIN2 - 400 - Fault clear time after ITRIP-fault VLIN,HIN = 0 V & 5V VITRIP = 0 V tFLTCLR - 4.7 - ms Min. deadtime between low side and high side DTPWM - 1.5 - µs Deadtime of gate drive circuit DTIC - 380 - ns - 0.69 0.93 - - 0.27 0.37 - - 0.07 0.17 - IGBT Turn-on Energy (includes reverse recovery of diode) Iout = 15A, VDC = 300V TvJ = 25°C TvJ = 150°C Eon IGBT Turn-off Energy Iout = 15A, VDC = 300V TvJ = 25°C TvJ = 150°C Eoff Iout = 15A, VDC = 300V TvJ = 25°C TvJ = 150°C Erec Diode recovery Energy Data Sheet 11/18 ns 370 mJ Rev. 2.1, July 2009 CIPOS™ IKCS22F60F2A IKCS22F60F2C Integrated Components Description Condition Resistor 1 Symbol Value Unit min typ max Rbs - 10 - Ω Resistor TNTC = 25°C RTS - 100 - kΩ B-Constant of NTC (Negative Temperature Coefficient) TNTC = 25°C B25 - 4250 - K Bootstrap diode forward voltage IFDbs = 100mA VFDbs - 1.9 2.05 V Capacitor C1 - 100 - nF Capacitor Cgex Bootstrap Capacitor CbsHx 0.39 - 100 - Typical Application 1 Symbols according to Figure 1 Data Sheet 12/18 Rev. 2.1, July 2009 CIPOS™ IKCS22F60F2A IKCS22F60F2C Characteristics (TC = 25°C, VDD = 15V, if not stated otherwise) 40A 40A VGE=25°C 35A 125°C 150°C 30A IF, forward CURRENT IC, COLLECTOR CURRENT 35A 25A 20A 15A 30A 25A 20A 15A 10A 10A 5A 5A 0A VGE=25°C 125°C 150°C 0A 0V 1V 2V 3V 0V VCE, COLLECTOR EMITTER VOLTAGE 2V VF FORWARD VOLTAGE Figure 6. Typical diode forward current as a function of forward voltage Figure 5. Typical IGBT output characteristic td(off) 1000ns 1V td(off) 1000ns td(on) tr t, SWITCHING TIMES t, SWITCHING TIMES td(on) 100ns tf tf 100ns tr 10ns 0A 10A 20A 30A 40A IC, COLLECTOR CURRENT 50°C 75°C 100°C 125°C TvJ, JUNCTION TEMPERATURE Figure 8. Typical switching times as a function of junction temperature (inductive load, VCE = 300V, IC = 15A Dynamic test circuit in Figure A) Figure 7. Typical switching times as a function of collector current (inductive load, TJ=150°C, VCE = 300V Dynamic test circuit in Figure A) Data Sheet 25°C 13/18 Rev. 2.1, July 2009 CIPOS™ IKCS22F60F2A IKCS22F60F2C 7.00mJ 0.90mJ 0.70mJ E, SWITCHING ENERGY E, SWITCHING ENERGY 5.00mJ 4.00mJ 3.00mJ 2.00mJ 0.60mJ 0.50mJ Eoff 0.40mJ 0.30mJ 0.20mJ Eoff Erec 0.10mJ 1.00mJ Erec 0.00mJ 25°C 0.00mJ 0A 5A 10A 15A 20A 25A 30A 35A 40A IC, COLLECTOR CURRENT 75°C 100°C 125°C Figure 10. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 300V, IC = 15A Dynamic test circuit in Figure A) ZthJC, TRANSIENT THERMAL RESISTANCE 1000kOhm 100kOhm 10kOhm min typ max 1kOhm 50°C TvJ, JUNCTION TEMPERATURE Figure 9. Typical switching energy losses as a function of collector current (inductive load, TJ = 150°C, VCE = 300V Dynamic test circuit in Figure A) RTS, NTC resistance Eon 0.80mJ Eon 6.00mJ 0 10 K/W Single Pulse IGBT Diode -1 10 K/W -2 -25°C 0°C 25°C 50°C 75°C 100°C TNTC, NTC TEMPERATURE 10µs 100µs 1ms 10ms 100ms tP, PULSE WIDTH Figure 11. Characteristic of NTC as a function of NTC temperature Data Sheet 10 K/W 100ns 1µs Figure 12. Transient thermal impedance as a function of pulse width (D=tP/T) 14/18 Rev. 2.1, July 2009 CIPOS™ IKCS22F60F2A IKCS22F60F2C Test Circuits and Parameter Definition t Erec Erec = ∫ vD ⋅i F dt 0 Figure A: Dynamic test circuit Leakage inductance Lσ =180nH Stray capacitance C σ =39pF Figure B: Definition of diodes switching characteristics Figure C: Definition of ITIRP propagation delay LIN1,2,3 HIN1,2,3 2.1V 0.9V td(off) td(on) tf iCU, iCV, iCW 90% vCEU, vCEV, vCEW 10% 90% 10% 2% tEoff t Eoff Eoff = tr ∫v CEx ⋅i Cx dt 0 10% 2% tEon t Eon Eon = ∫ vCEx ⋅i Cx dt 0 Figure D: Switching times definition and switching energy definition Data Sheet 15/18 Rev. 2.1, July 2009 CIPOS™ IKCS22F60F2A IKCS22F60F2C tFILIN tFILIN LIN HIN LIN on off on off high HO LO LO low Figure E: Short Pulse suppression Data Sheet 16/18 Rev. 2.1, July 2009 CIPOS™ IKCS22F60F2A IKCS22F60F2C Package Outline IKCS22F60F2A Note: There may occur discolourations on the copper surface without any effect of the thermal properties. Data Sheet 17/18 Rev. 2.1, July 2009 CIPOS™ IKCS22F60F2A IKCS22F60F2C Package Outline IKCS22F60F2C Description Condition Weight Symbol mP Unit Value min typ max - 17 - g Note: There may occur discolourations on the copper surface without any effect of the thermal properties. Data Sheet 18/18 Rev. 2.1, July 2009