PD - 9.1098B
IRF7106
PRELIMINARY
HEXFET ® Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
Dual N and P Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
S1
G1
S2
G2
N-CHANNEL MOSFET
1
8
2
7
3
6
4
5
D1
D1
VDSS
N-Ch
P-Ch
20V
-20V
D2
RDS(on) 0.125Ω 0.20Ω
D2
P-CHANNEL MOSFET
ID
Top View
3.0A
-2.5A
Description
Fourth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized device
design for which HEXFET Power MOSFETs are well known, provides the designer
with an extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in an
application with dramatically reduced board space. The package is designed for
vapor phase, infra-red, or wave soldering techniques. Power dissipation of greater
than 0.8W is possible in a typical PCB mount application.
SO-8
Absolute Maximum Ratings
Max.
Parameter
ID @ T C = 25°C
ID @ T C = 70°C
IDM
PD @T C = 25°C
VGS
dv/dt
TJ, TSTG
Units
N-Channel
P-Channel
3.0
2.5
10
-2.5
-2.0
-10
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
W
2.0
0.016
± 20
3.0
A
-3.0
-55 to + 150
W/°C
V
V/ns
°C
Thermal Resistance
Parameter
RθJA
Junction-to-Ambient (PCB Mount)**
Min.
Typ.
Max.
Units
––––
––––
62.5
°C/W
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
69
Revision 3
IRF7106
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
RDS(ON)
Static Drain-to-Source On-Resistance
P-Ch
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
LD
LS
Internal Drain Inductace
Internal Source Inductance
Ciss
Imput Capacitance
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
20
-20
—
—
—
—
—
—
1.0
-1.0
—
—
—
—
—
—
––
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max.
—
—
—
—
0.037 —
-0.022 —
— 0.125
— 0.25
— 0.20
— 0.35
—
—
—
—
4.4 —
3.0 —
— 2.0
— -2.0
—
25
— -25
— ±100
9.1 25
11
25
1.2 —
1.6 —
2.5 —
3.5 —
5.0 15
10
40
10
20
15
40
29
50
41
90
22
50
39
60
4.0 —
6.0 —
300 —
280 —
260 —
250 —
62
—
86
—
Units
V
V/°C
Ω
V
S
µA
nA
Conditions
VGS = 0V, I D = 250µA
VGS = 0V, I D = -250µA
Reference to 25°C, I D = 1mA
Reference to 25°C, I D = -1mA
VGS = 10V, I D = 1.0A
VGS = 4.5V, I D = 0.50A
VGS = -10V, I D = -1.0A
VGS = -4.5V, I D = -0.50A
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
VDS = 15V, ID = 3.0A
VDS = -15V, ID = -3.0A
VDS = 16V, VGS = 0V
VDS = -16V, VGS = 0V
VDS = 16V, VGS = 0V, T J = 125°C
VDS = -16V, VGS = 0V, T J = 125°C
VGS = ± 20V
N-Channel
ID = 2.3A, V DS = 10V, V GS = 10V
nC
P-Channel
ID = -2.3A, V DS = -10V, V GS = -10V
N-Channel
VDD = 20V, I D = 1.0A, R G = 6.0 Ω,
RD = 20Ω
ns
P-Channel
VDD = -20V, I D = -1.0A, R G = 6.0 Ω,
RD = 20Ω
nH
Between lead tip
and center of die contact
N-Channel
VGS = 0V, V DS = 15V, ƒ = 1.0MHz
pF
P-Channel
VGS = 0V, V DS = -15V, ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 23 )
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
Min. Typ. Max. Units
Conditions
—
— 1.7
—
— -1.6
A
—
—
10
—
— -10
— 0.90 1.2
T J = 25°C, I S = 1.6A, V GS = 0V
V
— -0.90 -1.6
T J = 25°C, I S = -1.3A, V GS = 0V
—
69 100 ns
N-Channel
—
69 100
T J = 25°C, I F = 1.25A, di/dt = 100A/µs
—
58 120 nC
P-Channel
T J = 25°C, I F = -1.25A, di/dt = 100A/µs
—
91 180
Intrinsic turn-on time is neglegible (turn-on is dominated by L S+LD)
N-Channel ISD ≤ 2.3A, di/dt ≤ 100A/µs, V DD ≤ V(BR)DSS, T J ≤ 150°C
P-Channel ISD ≤ -2.3A, di/dt ≤ 50A/µs, V DD ≤ V(BR)DSS, T J ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
70
IRF7106
N-Channel
100
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
I , Drain-to-Source Current (A)
D
I , Drain-to-Source Current (A)
D
TOP
4.5V
10
1
20µs PULSE WIDTH
TJ = 25°C
0.1
0.01
0.1
1
10
A
4.5V
10
1
20µs PULSE WIDTH
TJ = 150°C
0.1
0.01
100
0.1
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.0
TJ = 25°C
TJ = 150°C
VDS = 15V
20µs PULSE WIDTH
5
6
7
8
9
10
I D = 3.0A
1.5
1.0
0.5
VGS = 10V
0.0
A
-60
VGS , Gate-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
20
600
C oss
Ciss
200
Crss
0
10
0
20
40
60
80
A
100 120 140 160
I D = 2.3A
VDS = 10V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 11
0
A
1
-20
Fig 4. Normalized On-Resistance
Vs. Temperature
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
400
-40
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
800
A
100
Fig 2. Typical Output Characteristics,
T J = 150oC
100
4
10
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics,
TJ = 25oC
10
1
0
100
2
4
6
8
10
12
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
71
14
A
IRF7106
N-Channel
100
OPERATION IN THIS AREA LIMITED
BY R DS(on)
10
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
100
TJ = 150°C
TJ = 25°C
1
10
1ms
10ms
1
100ms
VGS = 0V
0.1
0.4
0.6
0.8
1.0
1.2
A
0.1
1.4
T A = 25°C
T J = 150°C
Single Pulse
0.1
A
1
10
100
VDS , Drain-to-Source Voltage (V)
VSD , Source-to-Drain Voltage (V)
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
3.0
ID, Drain Current (Amps)
2.5
2.0
1.5
1.0
Fig 10a. Switching Time Test Circuit
0.5
A
0.0
25
50
75
100
125
150
TA , Ambient Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
Fig 10b. Switching Time Waveforms
Fig 11b. Basic Gate Charge Waveform
Fig 11a. Gate Charge Test Circuit
72
IRF7106
P-Channel
100
100
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
TOP
-I D , Drain-to-Source Current (A)
-ID , Drain-to-Source Current (A)
TOP
10
-4.5V
1
20µs PULSE WIDTH
TJ = 25°C
A
0.1
0.1
1
10
10
-4.5V
1
20µs PULSE WIDTH
TJ = 150°C
0.1
0.1
100
1
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
-ID , Drain-to-Source Current (A)
100
TJ = 25°C
TJ = 150°C
10
VDS = -15V
20µs PULSE WIDTH
4
6
8
10
I D = -2.5A
1.5
1.0
0.5
0.0
-60
A
20
-VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
600
Coss
Ciss
Crss
200
0
A
1
10
-20
0
20
40
60
80
A
100 120 140 160
Fig 15. Normalized On-Resistance
Vs. Temperature
Fig 14. Typical Transfer Characteristics
400
VGS = -10V
-40
TJ , Junction Temperature (°C)
-VGS , Gate-to-Source Voltage (V)
800
A
100
Fig 13. Typical Output Characteristics,
TJ = 150oC
Fig 12. Typical Output Characteristics,
TJ = 25oC
1
10
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
I D = -2.3A
VDS = -10V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 22
0
100
0
-VDS , Drain-to-Source Voltage (V)
4
8
12
16
20
Q G , Total Gate Charge (nC)
Fig 16. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 17. Typical Gate Charge Vs.
Gate-to-Source Voltage
73
A
IRF7106
P-Channel
100
OPERATION IN THIS AREA LIMITED
BY R DS(on)
TJ = 150°C
-I D , Drain Current (A)
-ISD , Reverse Drain Current (A)
10
TJ = 25°C
1
10
1ms
10ms
1
100ms
VGS = 0V
0.1
0.0
1.0
2.0
A
0.1
TA = 25°C
TJ = 150°C
Single Pulse
0.1
3.0
A
1
10
100
-V DS , Drain-to-Source Voltage (V)
-VSD , Source-to-Drain Voltage (V)
Fig 19. Maximum Safe Operating Area
Fig 18. Typical Source-Drain Diode
Forward Voltage
2.5
-ID, Drain Current (Amps)
2.0
1.5
1.0
Fig 21a. Switching Time Test Circuit
0.5
A
0.0
25
50
75
100
125
150
TA , Ambient Temperature (°C)
Fig 20. Maximum Drain Current Vs.
Ambient Temperature
Fig 21b. Switching Time Waveforms
Fig 22b. Basic Gate Charge Waveform
Fig 22a. Gate Charge Test Circuit
74
IRF7106
N-P Channel
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
PD M
0.02
1
t
0.01
0.1
0.00001
1
t
SINGLE PULSE
(THERMAL RESPONSE)
N o te s:
1 . D u ty fa c to r D = t
1
/ t
2
2
2 . P e a k TJ = P D M x Z th J A + T A
0.0001
0.001
0.01
0.1
1
10
100
t 1 , Rectangular Pulse Duration (sec)
Fig 23. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Refer to the Appendix Section for the following:
Appendix A:
Figure 24, Peak Diode Recovery dv/dt Test Circuit — See page 329.
Appendix B:
Package Outline Mechanical Drawing — See page 332.
Appendix C:
Part Marking Information — See page 332.
Appendix D:
Tape and Reel Information — See page 336.
75
A
1000