PD -93799A IRF7324 HEXFET® Power MOSFET ● ● ● ● ● ● Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile (<1.1mm) Available in Tape & Reel 2.5V Rated S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 4 5 VDSS = -20V D2 D2 RDS(on) = 0.018Ω T o p V ie w Description New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications. SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. Units -20 -9.0 -7.1 -71 2.0 1.3 16 ± 12 -55 to + 150 V A W W mW/°C V °C Thermal Resistance Parameter RθJA www.irf.com Max. Maximum Junction-to-Ambient Units 62.5 °C/W 1 6/26/00 IRF7324 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -20 ––– ––– ––– -0.45 19 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– -0.02 ––– ––– ––– ––– ––– ––– ––– ––– 42 7.1 12 17 36 170 190 2940 630 420 Max. Units Conditions ––– V VGS = 0V, ID = -250µA ––– V/°C Reference to 25°C, ID = -1mA 0.018 VGS = -4.5V, ID = -9.0A Ω 0.026 VGS = -2.5V, ID = -7.7A -1.0 V VDS = VGS, ID = -250µA ––– S VDS = -10V, ID = -9.0A -1.0 VDS = -16V, VGS = 0V µA -25 VDS = -16V, VGS = 0V, TJ = 125°C -100 VGS = -12V nA 100 VGS = 12V 63 ID = -9.0A 11 nC VDS = -16V 18 VGS = -5.0V ––– VDD = -10V ––– ID = -1.0A ns ––– RG = 6.0Ω ––– RD = 10Ω ––– VGS = 0V ––– pF VDS = -15V ––– ƒ = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units ––– ––– -2.0 ––– ––– -71 ––– ––– ––– ––– 180 300 -1.2 270 450 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -2.0A, VGS = 0V TJ = 25°C, I F = -2.0A di/dt = -100A/µs D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 300µs; duty cycle ≤ 2%. Surface mounted on FR-4 board, t ≤ 10sec. 2 www.irf.com IRF7324 1000 1000 VGS -4.5V -3.5V -2.5V -2.0V -1.5V -1.3V -1.0V BOTTOM -0.75V 100 100 10 1 0.1 -0.75V 20µs PULSE WIDTH TJ = 25 ° C 0.01 0.1 1 10 10 1 -0.75V 0.1 100 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) T J = 150 ° C 10 TJ = 25 ° C 1 V DS = -15V 20µs PULSE WIDTH 2.0 2.5 3.0 3.5 -VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 100 1.5 1 -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1.0 20µs PULSE WIDTH TJ = 150 °C 0.01 0.1 -VDS , Drain-to-Source Voltage (V) 0.1 0.5 VGS -4.5V -3.5V -2.5V -2.0V -1.5V -1.3V -1.0V BOTTOM -0.75V TOP -I D, Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) TOP ID = -9.0A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7324 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 4000 Ciss 3000 2000 1000 Coss Crss 10 ID = -9.0A VDS = -16V -VGS , Gate-to-Source Voltage (V) 5000 0 8 6 4 2 0 1 10 100 0 10 -VDS , Drain-to-Source Voltage (V) 20 30 40 50 60 QG , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 TJ = 150 ° C -II D , Drain Current (A) -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 100 10 TJ = 25 ° C 1 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 1.6 10us 100us 10 1ms TC = 25 ° C TJ = 150 ° C Single Pulse 1 0.1 10ms 1 10 100 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7324 10.0 RD VDS VGS -I D , Drain Current (A) 8.0 D.U.T. RG + VDD 6.0 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 4.0 Fig 10a. Switching Time Test Circuit 2.0 td(on) tr t d(off) tf VGS 10% 0.0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 P DM 0.02 1 0.01 t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 0.025 R DS (on) , Drain-to-Source On Resistance ( Ω) R DS(on) , Drain-to -Source On Resistance ( Ω ) IRF7324 0.020 ID = -9.0A 0.015 0.010 2.0 2.5 3.0 3.5 4.0 4.5 0.10 0.08 0.06 0.04 VGS = -2.5V 0.02 VGS = -4.5V 0.00 0 10 VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage 20 30 40 50 60 -I D , Drain Current (A) Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50KΩ QG 12V .3µF VGS QGS QGD D.U.T. +VDS VGS VG -3mA Charge Fig 14a. Basic Gate Charge Waveform 6 .2µF IG ID Current Sampling Resistors Fig 14b. Gate Charge Test Circuit www.irf.com IRF7324 SO-8 Package Details D IM D -B - 5 8 E -A - 1 7 2 5 A 6 3 e 6X 5 H 0 .2 5 (.0 1 0 ) 4 M A M θ e1 K x 4 5° -C - 0 .1 0 (.0 0 4 ) B 8X 0 .2 5 (.0 1 0 ) A1 L 8X 6 C 8X M C A S B S NOTES: 1 . D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y 1 4 .5 M -1 9 8 2 . 2 . C O N T R O L L IN G D IM E N S IO N : IN C H . 3 . D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 4 . O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S -0 1 2 A A . 5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 (.0 0 6 ). 6 D IM E N S IO N S IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S T R A T E .. M IN M AX .05 32 .06 88 1.3 5 1.75 .00 40 .00 98 0.1 0 0.25 B .01 4 .01 8 0.3 6 0.46 C .00 75 .009 8 0.19 0.25 D .18 9 .196 4.80 4.98 E .15 0 .15 7 3.8 1 3.99 e1 A M ILLIM E T E R S M AX A1 e θ IN C H E S M IN .05 0 B A S IC 1.27 B A S IC .02 5 B A S IC 0 .635 B A S IC H .22 84 .244 0 K .01 1 .01 9 0.2 8 5.8 0 0.48 6.20 L 0.16 .05 0 0.4 1 1.27 θ 0° 8° 0° 8° R E C O M M E N D E D F O O T P R IN T 0 .7 2 (.0 2 8 ) 8X 6 .4 6 ( .2 5 5 ) 1 .7 8 (.0 7 0 ) 8X 1 .2 7 ( .0 5 0 ) 3X Part Marking www.irf.com 7 IRF7324 Tape and Reel T E R M IN A L N U M B E R 1 1 2 .3 ( .4 8 4 ) 1 1 .7 ( .4 6 1 ) 8 .1 ( .3 1 8 ) 7 .9 ( .3 1 2 ) F E E D D IR E C T IO N N O TES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . 3 3 0 .0 0 (1 2 .9 9 2 ) MAX. 1 4 .4 0 ( .5 66 ) 1 2 .4 0 ( .4 88 ) N O TE S : 1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data and specifications subject to change without notice. 2/00 8 www.irf.com