ILD621/621GB QUAD CHANNEL ILQ621/621GB DUAL CHANNEL MULTI-CHANNEL PHOTOTRANSISTOR OPTOCOUPLER FEATURES • Alternate Source to TLP621-2/-4 and TLP621GB-2/-4 • Current Transfer Ratio (CTR) at IF= 5 mA ILD/Q621: 50% Min. ILD/Q621GB: 100% Min. • Saturated Current Transfer Ratio (CTRSAT) at IF=1 mA ILD/Q621: 60% Typ. ILD/Q621GB: 30% Min. • High Collector-Emitter Voltage, BVCEO=70 V • Dual and Quad Packages Feature: - Reduced Board Space - Lower Pin and Parts Count - Better Channel to Channel CTR Match - Improved Common Mode Rejection • Field-Effect Stable by TRIOS (TRansparent IOn Shield) • Isolation Test Voltage from Double Molded Package, 5300 VACRMS • Underwriters Lab File #E52744 • VDE 0884 Available with Option 1 Dimensions in inches (mm) 4 2 3 1 Pin One I.D. .268 (6.81) .255 (6.48) 5 7 6 8 .390 (9.91) .379 (9.63) Anode 1 8 Emitter Cathode 2 7 Collector Cathode 3 6 Collector Anode 4 5 Emitter .305 typ. (7.75) typ. .045 (1.14) .030 (.76) .150 (3.81) .130 (3.30) 4° Typ. .040 (1.02) .030 (.76 ) .022 (.56) .018 (.46) .100 (2.54) Typ. 3°–9° .012 (.30) .008 (.20) Pin One I.D. Anode 1 .268 (6.81) .255 (6.48) Maximum Ratings (Each Channel) Emitter Reverse Voltage .................................................6 V Forward Current ...........................................60 mA Surge Current .................................................1.5 A Power Dissipation.......................................100 mW Derate from 25°C ................................1.33 mW/°C Detector Collector-Emitter Reverse Voltage ...................70 V Collector Current .......................................... 50 mA Collector Current (t <1 ms)..........................100 mA Power Dissipation.......................................150 mW Derate from 25°C .................................... –2 mW/°C Package Isolation Test Voltage (t=1 sec.) ......................................... 7500 VACPK (t=1 min.) ....................................... 5300 VACRMS Package Dissipation ILD620/GB............... 400 mW Derate from 25°C ...............................5.33 mW/°C Package Dissipation ILQ620/GB ..............500 mW Derate from 25°C ...............................6.67 mW/°C Creepage ............................................... 7 mm min. Clearance............................................... 7 min min. Isolation Resistance VIO=500 V, TA=25°C ............................... ≥1012 Ω VIO=500 V, TA=100°C ............................. ≥1011 Ω Storage Temperature................... –55°C to +150°C Operating Temperature ................–55°C to +100°C Junction Temperature.................................... 100°C Soldering Temperature (2 mm from case bottom) .......................... 260°C .135 (3.43) .115 (2.92) 10° Typ. .790 (20.07) .779 (19.77 ) 16 Emitter Cathode 2 15 Collector Cathode 3 14 Collector Anode 4 13 Emitter Anode 5 12 Emitter Cathode 6 11 Collector Cathode 10 Collector 7 Anode 8 9 .305 typ. (7.75) typ. .045 (1.14) .030 (.76) .150 (3.81) .130 (3.30) 4° Typ. .040 (1.02) .030 (.76 ) .022 (.56) .018 (.46) .100 (2.54) Typ. Emitter 10° Typ. .135 (3.43) .115 (2.92) 3°–9° .012 (.30) .008 (.20) DESCRIPTION The ILD/Q621 and ILD/Q621GB are multi-channel phototransistor optocouplers that use GaAs IRLED emitters and high gain NPN silicon phototransistors. These devices are constructed using over/under leadframe optical coupling and double molded insulation technology. This assembly process offers a withstand test voltage of 7500 VDC. The ILD/Q621GB is well suited for CMOS interfacing given the CTRCEsat of 30% minimum at IF of 1 mA. High gain linear operation is guaranteed by a minimum CTRCE of 100% at 5 mA. The ILD/Q621 has a guaranteed CTRCE of 50% minimum at 5 mA. The TRansparent IOn Shield insures stable DC gain in applications such as power supply feedback circuits, where constant DC VIO voltages are present. 5–1 Characteristics Symbol Min. Typ. Max. Unit Condition VF 1 1.15 1.3 V IF=10 mA 10 Emitter Forward Voltage Reverse Current IR 0.01 µA VR=6 V Capacitance CO 40 pF VF=0 V, f=1 MHz Thermal Resistance, Junction to Lead RTHJL 750 °C/W Detector Capacitance CCE 6.8 pF VCE=5 V, f=1 MHz Collector-Emitter Leakage Current ICEO 10 100 nA VCE=24 V Collector-Emitter Leakage Current ICEO 2 50 µA TA=85°C, VCE=24 V Thermal Resistance, Junction to Lead RTHJL 500 °C/W Package Transfer Characteristics Channel/Channel CTR Match CTRX/CTRY 1 to 1 3 to 1 IF=5 mA, VCE=5 V ILD/Q621 Saturated Current Transfer Ratio CTRCEsat Current Transfer Ratio CTRCE Collector-Emitter Saturation Voltage VCEsat 60 50 80 % IF=1 mA, VCE=0.4 V 600 % IF=5 mA, VCE=5 V 0.4 V IF=8 mA, ICE=2.4 mA % IF=1 mA, VCE=0.4 V 600 % IF=5 mA, VCE=5 V 0.4 V IF=8 mA, ICE=0.2 mA ILD/Q621GB Saturated Current Transfer Ratio CTRCEsat 30 Current Transfer Ratio (Collector-Emitter) CTRCE 100 Collector-Emitter Saturation Voltage VCEsat 200 Isolation and Insulation Common Mode Rejection, Output High CMH 5000 V/µs VCM=50 VP-P, RL=1 kΩ, IF=0 mA Common Mode Rejection, Output Low CML 5000 V/µs VCM=50 VP-P, RL=1 kΩ, IF=10 mA Common Mode Coupling Capacitance CCM 0.01 pF Package Capacitance CI-O 0.8 pF VIO=0 V, f=1 MHz Insulation Resistance RS 1012 Ω VIO=500 V, TA=25°C 500 VAC Channel to Channel Insulation Switching Times Figure 2. Non-saturated switching timing Figure 1. Non-saturated switching timing IF VCC=5 V IF=10 mA VO F=10 KHz, DF=50 % V0 RL=75 Ω tPHL Characteristic Symbol Typ. Unit Test Condition tS On Time TON 3.0 µs IF=± 10 mA Rise Time tR 20 µs VCC=5 V Off Time tOFF 2.3 µs RL=75 Ω Fall Time tF 2.0 µs 50% of VPP Propagation H-L tPHL 1.1 µs Propagation L-H tPLH 2.5 µs tPLH 50% tD tR tF ILD/Q621/GB 5–2 Figure 6. Maximum LED power dissipation Figure 3. Saturated switching timing 200 PLED - LED Power - mW IF tD tR VO tPLH tS tPHL VTH=1.5 V tF 150 100 50 0 --60 -40 -20 0 20 40 60 80 Ta - Ambient Temperature - °C 100 Figure 4. Saturated switching timing Figure 7. Forward voltage versus forward current VCC=5 V F=10 KHz, DF=50% 1.4 VF - Forward Voltage - V RL VO IF=10 mA Symbol Typ. Unit Test Condition On Time TON 4.3 µs IF=± 10 mA Rise Time tR 2.8 µs VCC=5 V Off Time tOFF 2.5 µs RL=1 Ω Fall Time tF 11 µs VTH=1.5 V Propagation H-L tPHL 2.6 µs Propagation L-H tPLH 7.2 µs IF - Maximum LED Current - mA 1.2 Ta = 25°C 1.1 1.0 0.9 Ta = 85°C 0.8 0.7 1 10 IF - Forward Current - mA 100 Figure 8. Collector-emitter current versus temperature and LED current 35 Figure 5. Maximum LED current versus ambient temperature 120 100 80 60 TJ (MAX)=100°C 40 Ta = -55°C .1 Ice - Collector Current - mA Characteristic 1.3 30 25 50°C 20 15 70°C 25°C 85°C 10 5 0 0 10 20 30 40 IF - LED Current - mA 50 60 20 0 --60 -40 -20 0 20 40 60 80 Ta - Ambient Temperature - °C 100 ILD/Q621/GB 5–3 Figure 9. Collector-emitter leakage versus temperature 10 2.0 3 10 2 10 Vce = 10V 1 TYPICAL 10 0 10 -1 10 -2 -20 2.5 Ta = 25°C, IF = 10mA Vcc = 5 V,Vth = 1.5 tpHL V 2.0 1.5 10 tpLH 1 .1 NCTRce(sat) 0.5 Ta = 50°C 1.0 1 10 100 RL - Collector Load Resistor - KΩ Figure 11. Maximum detector power dissipation 200 1 10 IF - LED Current - mA 100 Figure 14. Normalization factor for non-saturated and saturated CTR TA=70°C versus If 2.0 Normalized to: Vce = 10V, IF = 5mA, Ta = 25°C CTRce(sat) Vce = 0.4V CTRNF - Normalized CTR Factor 100 NCTRce 1.0 0.0 .1 tpHL - Propagation Delay - µs 1000 Normalized to: Vce = 10V, IF = 5mA, Ta = 25°C CTRce(sat) Vce = 0.4V 1.5 0 20 40 60 80 100 Ta - Ambient Temperature - °C Figure 10. Propagation delay versus collector load resistor tpLH - Propagation Delay - µs Figure 13. Normalization factor for non-saturated and saturated CTR TA=50°C versus If CTRNF - Normalized CTR Factor Iceo - Collector-Emitter - nA 5 10 10 4 1.5 NCTRce 1.0 NCTRce(sat) 0.5 Ta = 70°C 0.0 .1 1 10 IF - LED Current - mA 100 Figure 15. Normalization factor for non-saturated and saturated CTR TA=100°C versus If P - Detector Power - mW DET 2.0 CTRNF - Normalized CTR Factor 150 Normalized to: Vce = 10V, IF = 5mA, Ta = 25°C CTRce(sat) Vce = 0.4V 1.5 100 1.0 50 0 -60 NCTRce 0.5 -40 -20 0 20 40 60 Ta - Ambient Temperature - °C 80 Ta = 100°C 0.0 .1 100 Figure 12. Maximum collector current versus collector voltage NCTRce(sat) 1 10 IF - LED Current - mA 100 Figure 16. Peak LED current versus pulse duration, Tau 10000 1000 τ 100 Rth = 500°C/W 10 25°C 50°C 75°C 1 .1 .1 If(pk) - Peak LED Current - mA Ice - Collector Current - mA Duty Factor 90°C 1 10 Vce - Collector-Emitter Voltage - V 1000 t τ DF = /t .05 .1 .2 100 10 -6 10 100 .005 .01 .02 .5 10-5 10-4 10-3 10 -2 10-1 10 0 10 1 t - LED Pulse Duration - s ILD/Q621/GB 5–4