IL1/2/5 Phototransistor Optocoupler FEATURES • Current Transfer Ratio at IF=10 mA IL1, 20% Min. IL2, 100% Min. IL5, 50% Min. • High Collector-Emitter Voltage IL1 – BVCEO=50 V IL2, IL5 – BVCEO=70 V • Field-Effect Stable by TRansparent IOn Shield (TRIOS) • Double Molded Package Offers Isolation Test Voltage 5300 VRMS • Underwriters Lab File #E52744 V • VDE Approval #0884 (Available with Option 1) Dimensions in inches (mm) 3 4 pin one ID 5 Anode 1 6 Base Cathode 2 5 Collector NC 3 4 Emitter 6 .335 (8.50) .343 (8.70) .048 (0.45) .022 (0.55) .039 (1.00) Min. .300 (7.62) typ. .130 (3.30) .150 (3.81) 4° typ. DESCRIPTION See Appnote 45, “How to Use Optocoupler Normalized Curves”. 1 .248 (6.30) .256 (6.50) D E The IL1/2/5 are optically coupled isolated pairs employing GaAs infrared LEDs and silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the drive while maintaining a high degree of electrical isolation between input and output. The IL1/2/5 are especially designed for driving medium-speed logic and can be used to eliminate troublesome ground loop and noise problems. These couplers can be used also to replace relays and transformers in many digital interface applications such as CRT modulation. 2 .018 (0.45) .022 (0.55) 18° .031 (0.80) min. 3°–9° .031 (0.80) .035 (0.90) .100 (2.54) typ. .114 (2.90) .130 (3.0) .010 (.25) typ. .300–.347 (7.62–8.81) Maximum Ratings Emitter Reverse Voltage ................................................................................... 6.0 V Forward Current ................................................................................60 mA Surge Current.......................................................................................2.5 A Power Dissipation............................................................................ 100 mW Derate Linearly from 25°C........................................................ 1.33 mW/°C Detector Collector-Emitter Reverse Voltage IL1 ....................................................................................................... 50 V IL2, IL5 ................................................................................................ 70 V Emitter-Base Reverse Voltage.............................................................. 7.0 V Collector-Base Reverse Voltage............................................................ 70 V Collector Current ...............................................................................50 mA Collector Current (t<1.0 ms) ............................................................400 mA Power Dissipation............................................................................ 200 mW Derate Linearly from 25°C .......................................................... 2.6 mW/°C Package Package Power Dissipation ........................................................... 250 mW Derate Linearly from 25°C .......................................................... 3.3 mW/°C Isolation Test Voltage (between emitter and detector referred to standard climate 23°C/50%RH, DIN 50014) .......... 5300 VRMS Creepage ...................................................................................... ≥7.0 mm Clearance...................................................................................... ≥7.0 mm Comparative Tracking Index per DIN IEC 112/VDE 0303, part 1 ........................................................... 175 Isolation Resistance VIO=500 V, TA=25°C ................................................................... ≥1012 Ω VIO=500 V, TA=100°C ................................................................. ≥1011 Ω Storage Temperature ........................................................ –40°C to +150°C Operating Temperature .................................................... –40°C to +100°C Junction Temperature......................................................................... 100°C Soldering Temperature (2.0 mm from case bottom) .......................... 260°C 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA www.infineon.com/opto • 1-888-Infineon (1-888-463-4636) 2–85 March 17. 2000-13 Characteristics Symbol Min Typ Max Unit Condition Forward Voltage VF — 1.25 1.65 V IF=60 mA Breakdown Voltage VBR 6.0 30 — Reverse Current IR — 0.01 10 µA VR=6.0 V Capacitance CO — 40 — pF VR=0 V, f=1.0 MHz Thermal Resistance Junction to Lead RTHJL — 750 — K/W — CCE — 6.8 8.5 11 — pF VCE=5.0 V, f=1.0 MHz VCB=5.0 V, f=1.0 MHz VEB=5.0 V, f=1.0 MHz Emitter IR=10 µA Detector Capacitance CCB CEB Collector-Emitter Leakage Current ICEO — 5.0 50 nA VCE=10 V Collector-Emitter Saturation Voltage VCESAT — 0.25 — V ICE=1.0 mA, IB=20 µA Base-Emitter Voltage VBE — 0.65 — V VCE=10 V, IB=20 µA DC Forward Current Gain HFE 200 650 1800 — VCE=10 V, IB=20 µA Saturated DC Forward Current Gain HFESAT 120 400 600 — VCE=0.4 V, IB=20 µA Thermal Resistance Junction to Lead RTHJL — 500 — K/W — Saturated Current Transfer Ratio (Collector-Emitter) CTRCESAT — 75 — % IF=10 mA, VCE=0.4 V Current Transfer Ratio (Collector-Emitter) CTRCE 20 80 300 IF=10 mA, VCE=10 V Current Transfer Ratio (Collector-Base) CTRCB — 0.25 — IF=10 mA, VCB=9.3 V Saturated Current Transfer Ratio (Collector-Emitter) CTRCESAT — 170 — Current Transfer Ratio (Collector-Emitter) CTRCE 100 200 500 IF=10 mA, VCE=10 V Current Transfer Ratio CTRCB — 0.25 — IF=10 mA, VCB=9.3 V Saturated Current Transfer Ratio (Collector-Emitter) CTRCESAT — 100 — Current Transfer Ratio (Collector-Emitter) CTRCE 50 130 400 IF=10 mA, VCE=10 V Current Transfer Ratio CTRCB — 0.25 — IF=10 mA, VCB=9.3 V Common Mode Rejection Output High CMH — 5000 — Common Mode Rejection Output Low CML — Common Mode Coupling Capacitance CCM — 0.01 — Package Capacitance CI-O — 0.6 — Package Transfer Characteristics IL1 IL2 % IF=10 mA, VCE=0.4 V IL5 % IF=10 mA, VCE=0.4 V Isolation and Insulation Insulation Resistance RS V/µs VCM=50 VP-P, RL=1 kΩ, IF=10 mA pF — — — 10 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA www.infineon.com/opto • 1-888-Infineon (1-888-463-4636) 14 — VI-O=0 V, f=1.0 MHz Ω VI-O=500 V IL1/2/5 2–86 March 17. 2000-13 Switching Times Figure 3. Non-saturated switching timing IF Figure 1. Non-saturated switching timing VCC=5 V IF=10 mA VO F=10 KHz DF=50% tPHL RL=75 Ω tPLH V0 tS 50% Figure 2. Saturated switching timing tD VCC=5 V F=10 KHz DF=50% RL Figure 4. Saturated switching timing VO IF=10 mA tF tR IF VO tD tR tPLH tPHL tS VTH=1.5 V tF Non-Saturated Switching Time Table—Typical Characteristic Sym IL1 IF=20 mA IL2 IF=5.0 mA IL5 IF=10 mA Unit Test Condition Delay TD 0.8 1.7 1.7 µs — Rise Time tr 1.9 2.6 2.6 VCC=5.0 V Storage tS 0.2 0.4 0.4 RL=75 Ω Fall Time tf 1.4 2.2 2.2 — Propagation H-L tPHL 0.7 1.2 1.1 tp measured at 50% of output Propagation L-H tPLH 1.4 2.3 2.5 — IL2 IF=5.0 mA IL5 IF=10 mA Unit Test Condition IF=20 mA µs — Saturated Switching Time Table—Typical Characteristic Sym IL1 Delay TD 0.8 1.0 1.7 Rise Time tr 1.2 2.0 7.0 VCL=5.0 V Storage tS 7.4 5.4 4.6 VCE=0.4 Fall Time tf 7.6 13.5 20 RL=1.0 K Propagation H-L tPHL 1.6 5.4 2.6 VTH=1.5 V Propagation L-H tPLH 8.6 7.4 7.2 — 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA www.infineon.com/opto • 1-888-Infineon (1-888-463-4636) IL1/2/5 2–87 March 17. 2000-13 Figure 5. Forward voltage versus forward current 1.5 1.3 NCTR - Normalized CTR VF - Forward Voltage - V 1.4 Figure 9. Normalized non-saturated and saturated CTR at TA=100°C versus LED current TA = -55°C 1.2 TA = 25°C 1.1 1.0 0.9 TA = 100°C 0.8 0.7 1 10 IF - Forward Current - mA 100 NCTR - Normalized CTR Figure 6. Normalized non-saturated and saturated CTR at TA=25°C versus LED current 1.5 0.5 NCTR(SAT) NCTR 0.0 .1 1 10 IF - LED Current - mA 100 Figure 7. Normalized non-saturated and saturated CTR at TA=50°C versus LED current NCTR(SAT) NCTR 1 10 IF - LED Current - mA NCTR - Normalized CTR 100 Normalized to: VCE=10 V, IF=10 mA TA=25°C CTRce(sat) VCE = 0.4V TA=70°C 0.5 NCTR(SAT) NCTR 1 10 IF - LED Current - mA 50°C 20 15 70°C 25°C 100°C 10 5 0 0 10 20 30 40 IF - LED Current - mA 50 60 105 104 Worst Case 103 102 VCE = 10 V 101 Typical 100 10-1 10-2 -20 0 20 40 60 80 100 TA - Ambient Temperature - °C 1.5 .1 25 100 Figure 8. Normalized non-saturated and saturated CTR at TA=70°C versus LED current 0.0 1 10 IF - LED Current - mA 30 ICEO - Collector-Emitter - nA 0.5 100 Figure 12. Normalized CTRcb versus LED current and temperature NCTRcb - Normalized CTRcb NCTR - Normalized CTR TA = 50°C 1.0 NCTR(SAT) NCTR Figure 11. Collector-emitter leakage current versus temperature Normalized to: VCE=10 V, IF=10 mA, TA=25°C CTRce(sat) VCE = 0.4 V 0.0 .1 0.5 Figure 10. Collector-emitter current versus temperature and LED current 1.5 1.0 TA=100°C 35 Normalized to: VCE = 10 V, IF = 10 mA TA = 25°C CTRce(sat) VCE = 0.4 V 1.0 1.0 0.0 .1 Ice - Collector Current - mA .1 Normalized to: VCE=10 V, IF=10 mA, TA=25°C CTRce(sat) VCE=0.4 V 1.5 Normalized to: IF =10 mA Vcb = 9.3 V Ta = 25°C 1.0 0.5 25°C 50°C 70°C 0.0 .1 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA www.infineon.com/opto • 1-888-Infineon (1-888-463-4636) 1 10 IF - LED Current - mA 100 IL1/2/5 2–88 March 17. 2000-13 Figure 13. Collector base photocurrent versus LED current Figure 16. Normalized saturated HFE versus base current and temperature 1000 1.5 100 NHFE(sat) - Normalized Saturated HFE Icb = 1.0357 *IF ^1.3631 10 1 .1 1.0 Normalized to: VCE = 10 V IB = 20 µA TA = 25°C 0.5 VCE = 0.4 V 0.0 .01 1 10 IF - LED Current - mA Figure 14. Normalized photocurrent versus IF and temperature 10 Normalized to: IF = 10 mA, TA = 25¡C 1 NIB-TA=-20¡C NIb,TA=25¡C NIb,TA=50¡C NIb,TA=70¡C .1 1 100 1000 1 10 IF -LED Current- mA 1000 2.5 Ta = 25°C, IF = 10mA Vcc = 5 V, Vth = 1.5 V tpHL 100 2.0 1.5 10 tpLH 1 .01 .1 10 100 IB - Base Current - (µA) Figure 17. Propagation delay versus collector load resistor tp – Propagatio Delay - µs .1 Normalized Photocurrent 70°C 50°C 25°C -20°C 1.0 .1 1 10 RL - Collector Load Resistor - KΩ tpHL - Propagation Delay - µs Icb - Collector Base Photocurrent - µA Ta = 25°C 100 100 Figure 15. Normalized non-saturated HFE versus base current and temperature NHFE - Normalized HFE 1.2 70°C 50°C 1.0 25°C Normalized to: Ib = 20µA Vce = 10 V Ta = 25°C -20°C 0.8 0.6 0.4 1 10 100 Ib - Base Current - µA 1000 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA www.infineon.com/opto • 1-888-Infineon (1-888-463-4636) IL1/2/5 2–89 March 17. 2000-13