ETC IL1-1

IL1/2/5
Phototransistor
Optocoupler
FEATURES
• Current Transfer Ratio at IF=10 mA
IL1, 20% Min.
IL2, 100% Min.
IL5, 50% Min.
• High Collector-Emitter Voltage
IL1 – BVCEO=50 V
IL2, IL5 – BVCEO=70 V
• Field-Effect Stable by TRansparent IOn Shield
(TRIOS)
• Double Molded Package Offers Isolation Test
Voltage 5300 VRMS
• Underwriters Lab File #E52744
V
•
VDE Approval #0884
(Available with Option 1)
Dimensions in inches (mm)
3
4
pin one ID
5
Anode 1
6
Base
Cathode 2
5
Collector
NC 3
4
Emitter
6
.335 (8.50)
.343 (8.70)
.048 (0.45)
.022 (0.55)
.039
(1.00)
Min.
.300 (7.62)
typ.
.130 (3.30)
.150 (3.81)
4°
typ.
DESCRIPTION
See Appnote 45, “How to Use Optocoupler Normalized
Curves”.
1
.248 (6.30)
.256 (6.50)
D E
The IL1/2/5 are optically coupled isolated pairs
employing GaAs infrared LEDs and silicon NPN
phototransistor. Signal information, including a DC
level, can be transmitted by the drive while maintaining a high degree of electrical isolation between
input and output. The IL1/2/5 are especially
designed for driving medium-speed logic and can
be used to eliminate troublesome ground loop and
noise problems. These couplers can be used also
to replace relays and transformers in many digital
interface applications such as CRT modulation.
2
.018 (0.45)
.022 (0.55)
18°
.031 (0.80) min. 3°–9°
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.114 (2.90)
.130 (3.0)
.010 (.25)
typ.
.300–.347
(7.62–8.81)
Maximum Ratings
Emitter
Reverse Voltage ................................................................................... 6.0 V
Forward Current ................................................................................60 mA
Surge Current.......................................................................................2.5 A
Power Dissipation............................................................................ 100 mW
Derate Linearly from 25°C........................................................ 1.33 mW/°C
Detector
Collector-Emitter Reverse Voltage
IL1 ....................................................................................................... 50 V
IL2, IL5 ................................................................................................ 70 V
Emitter-Base Reverse Voltage.............................................................. 7.0 V
Collector-Base Reverse Voltage............................................................ 70 V
Collector Current ...............................................................................50 mA
Collector Current (t<1.0 ms) ............................................................400 mA
Power Dissipation............................................................................ 200 mW
Derate Linearly from 25°C .......................................................... 2.6 mW/°C
Package
Package Power Dissipation ........................................................... 250 mW
Derate Linearly from 25°C .......................................................... 3.3 mW/°C
Isolation Test Voltage (between emitter and detector
referred to standard climate 23°C/50%RH, DIN 50014) .......... 5300 VRMS
Creepage ...................................................................................... ≥7.0 mm
Clearance...................................................................................... ≥7.0 mm
Comparative Tracking Index per
DIN IEC 112/VDE 0303, part 1 ........................................................... 175
Isolation Resistance
VIO=500 V, TA=25°C ................................................................... ≥1012 Ω
VIO=500 V, TA=100°C ................................................................. ≥1011 Ω
Storage Temperature ........................................................ –40°C to +150°C
Operating Temperature .................................................... –40°C to +100°C
Junction Temperature......................................................................... 100°C
Soldering Temperature (2.0 mm from case bottom) .......................... 260°C
 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–85
March 17. 2000-13
Characteristics
Symbol
Min
Typ
Max
Unit
Condition
Forward Voltage
VF
—
1.25
1.65
V
IF=60 mA
Breakdown Voltage
VBR
6.0
30
—
Reverse Current
IR
—
0.01
10
µA
VR=6.0 V
Capacitance
CO
—
40
—
pF
VR=0 V, f=1.0 MHz
Thermal Resistance Junction to Lead
RTHJL
—
750
—
K/W
—
CCE
—
6.8
8.5
11
—
pF
VCE=5.0 V, f=1.0 MHz
VCB=5.0 V, f=1.0 MHz
VEB=5.0 V, f=1.0 MHz
Emitter
IR=10 µA
Detector
Capacitance
CCB
CEB
Collector-Emitter Leakage Current
ICEO
—
5.0
50
nA
VCE=10 V
Collector-Emitter Saturation Voltage
VCESAT
—
0.25
—
V
ICE=1.0 mA, IB=20 µA
Base-Emitter Voltage
VBE
—
0.65
—
V
VCE=10 V, IB=20 µA
DC Forward Current Gain
HFE
200
650
1800
—
VCE=10 V, IB=20 µA
Saturated DC Forward Current Gain
HFESAT
120
400
600
—
VCE=0.4 V, IB=20 µA
Thermal Resistance Junction to Lead
RTHJL
—
500
—
K/W
—
Saturated Current Transfer Ratio
(Collector-Emitter)
CTRCESAT
—
75
—
%
IF=10 mA, VCE=0.4 V
Current Transfer Ratio
(Collector-Emitter)
CTRCE
20
80
300
IF=10 mA, VCE=10 V
Current Transfer Ratio
(Collector-Base)
CTRCB
—
0.25
—
IF=10 mA, VCB=9.3 V
Saturated Current Transfer Ratio
(Collector-Emitter)
CTRCESAT
—
170
—
Current Transfer Ratio
(Collector-Emitter)
CTRCE
100
200
500
IF=10 mA, VCE=10 V
Current Transfer Ratio
CTRCB
—
0.25
—
IF=10 mA, VCB=9.3 V
Saturated Current Transfer Ratio
(Collector-Emitter)
CTRCESAT
—
100
—
Current Transfer Ratio
(Collector-Emitter)
CTRCE
50
130
400
IF=10 mA, VCE=10 V
Current Transfer Ratio
CTRCB
—
0.25
—
IF=10 mA, VCB=9.3 V
Common Mode Rejection Output High
CMH
—
5000
—
Common Mode Rejection Output Low
CML
—
Common Mode Coupling Capacitance
CCM
—
0.01
—
Package Capacitance
CI-O
—
0.6
—
Package Transfer Characteristics
IL1
IL2
%
IF=10 mA, VCE=0.4 V
IL5
%
IF=10 mA, VCE=0.4 V
Isolation and Insulation
Insulation Resistance
RS
V/µs
VCM=50 VP-P, RL=1 kΩ, IF=10 mA
pF
—
—
—
10
 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
14
—
VI-O=0 V, f=1.0 MHz
Ω
VI-O=500 V
IL1/2/5
2–86
March 17. 2000-13
Switching Times
Figure 3. Non-saturated switching timing
IF
Figure 1. Non-saturated switching timing
VCC=5 V
IF=10 mA
VO
F=10 KHz
DF=50%
tPHL
RL=75 Ω
tPLH
V0
tS
50%
Figure 2. Saturated switching timing
tD
VCC=5 V
F=10 KHz
DF=50%
RL
Figure 4. Saturated switching timing
VO
IF=10 mA
tF
tR
IF
VO
tD
tR
tPLH
tPHL
tS
VTH=1.5 V
tF
Non-Saturated Switching Time Table—Typical
Characteristic
Sym
IL1
IF=20 mA
IL2
IF=5.0 mA
IL5
IF=10 mA
Unit
Test Condition
Delay
TD
0.8
1.7
1.7
µs
—
Rise Time
tr
1.9
2.6
2.6
VCC=5.0 V
Storage
tS
0.2
0.4
0.4
RL=75 Ω
Fall Time
tf
1.4
2.2
2.2
—
Propagation H-L
tPHL
0.7
1.2
1.1
tp measured at 50% of output
Propagation L-H
tPLH
1.4
2.3
2.5
—
IL2
IF=5.0 mA
IL5
IF=10 mA
Unit
Test Condition
IF=20 mA
µs
—
Saturated Switching Time Table—Typical
Characteristic
Sym
IL1
Delay
TD
0.8
1.0
1.7
Rise Time
tr
1.2
2.0
7.0
VCL=5.0 V
Storage
tS
7.4
5.4
4.6
VCE=0.4
Fall Time
tf
7.6
13.5
20
RL=1.0 K
Propagation H-L
tPHL
1.6
5.4
2.6
VTH=1.5 V
Propagation L-H
tPLH
8.6
7.4
7.2
—
 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
IL1/2/5
2–87
March 17. 2000-13
Figure 5. Forward voltage versus forward current
1.5
1.3
NCTR - Normalized CTR
VF - Forward Voltage - V
1.4
Figure 9. Normalized non-saturated and saturated
CTR at TA=100°C versus LED current
TA = -55°C
1.2
TA = 25°C
1.1
1.0
0.9
TA = 100°C
0.8
0.7
1
10
IF - Forward Current - mA
100
NCTR - Normalized CTR
Figure 6. Normalized non-saturated and saturated
CTR at TA=25°C versus LED current
1.5
0.5
NCTR(SAT)
NCTR
0.0
.1
1
10
IF - LED Current - mA
100
Figure 7. Normalized non-saturated and saturated
CTR at TA=50°C versus LED current
NCTR(SAT)
NCTR
1
10
IF - LED Current - mA
NCTR - Normalized CTR
100
Normalized to:
VCE=10 V, IF=10 mA
TA=25°C
CTRce(sat) VCE = 0.4V
TA=70°C
0.5
NCTR(SAT)
NCTR
1
10
IF - LED Current - mA
50°C
20
15
70°C
25°C
100°C
10
5
0
0
10
20
30
40
IF - LED Current - mA
50
60
105
104
Worst
Case
103
102
VCE = 10 V
101
Typical
100
10-1
10-2
-20
0
20
40
60
80
100
TA - Ambient Temperature - °C
1.5
.1
25
100
Figure 8. Normalized non-saturated and saturated
CTR at TA=70°C versus LED current
0.0
1
10
IF - LED Current - mA
30
ICEO - Collector-Emitter - nA
0.5
100
Figure 12. Normalized CTRcb versus LED current
and temperature
NCTRcb - Normalized CTRcb
NCTR - Normalized CTR
TA = 50°C
1.0
NCTR(SAT)
NCTR
Figure 11. Collector-emitter leakage current versus
temperature
Normalized to:
VCE=10 V, IF=10 mA, TA=25°C
CTRce(sat) VCE = 0.4 V
0.0
.1
0.5
Figure 10. Collector-emitter current versus
temperature and LED current
1.5
1.0
TA=100°C
35
Normalized to:
VCE = 10 V, IF = 10 mA
TA = 25°C
CTRce(sat) VCE = 0.4 V
1.0
1.0
0.0
.1
Ice - Collector Current - mA
.1
Normalized to:
VCE=10 V, IF=10 mA, TA=25°C
CTRce(sat) VCE=0.4 V
1.5
Normalized to:
IF =10 mA
Vcb = 9.3 V
Ta = 25°C
1.0
0.5
25°C
50°C
70°C
0.0
.1
 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
1
10
IF - LED Current - mA
100
IL1/2/5
2–88
March 17. 2000-13
Figure 13. Collector base photocurrent versus
LED current
Figure 16. Normalized saturated HFE versus base
current and temperature
1000
1.5
100
NHFE(sat) - Normalized
Saturated HFE
Icb = 1.0357 *IF ^1.3631
10
1
.1
1.0
Normalized to:
VCE = 10 V
IB = 20 µA
TA = 25°C
0.5
VCE = 0.4 V
0.0
.01
1
10
IF - LED Current - mA
Figure 14. Normalized photocurrent versus IF and
temperature
10
Normalized to:
IF = 10 mA, TA = 25¡C
1
NIB-TA=-20¡C
NIb,TA=25¡C
NIb,TA=50¡C
NIb,TA=70¡C
.1
1
100
1000
1
10
IF -LED Current- mA
1000
2.5
Ta = 25°C, IF = 10mA
Vcc = 5 V, Vth = 1.5 V
tpHL
100
2.0
1.5
10
tpLH
1
.01
.1
10
100
IB - Base Current - (µA)
Figure 17. Propagation delay versus collector load resistor
tp – Propagatio Delay - µs
.1
Normalized Photocurrent
70°C
50°C
25°C
-20°C
1.0
.1
1
10
RL - Collector Load Resistor - KΩ
tpHL - Propagation Delay - µs
Icb - Collector Base
Photocurrent - µA
Ta = 25°C
100
100
Figure 15. Normalized non-saturated HFE versus
base current and temperature
NHFE - Normalized HFE
1.2
70°C
50°C
1.0
25°C
Normalized to:
Ib = 20µA
Vce = 10 V
Ta = 25°C
-20°C
0.8
0.6
0.4
1
10
100
Ib - Base Current - µA
1000
 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
IL1/2/5
2–89
March 17. 2000-13