Bulletin I27100 rev. C 03/01 IRK.F180.. SERIES MAGN-A-pak Power Modules FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features 180 A Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate 3000 V RMS isolating voltage Industrial standard package UL E78996 approved Description These series of MAGN-A-pak modules are intended for applications such as self-commutated inverters, DC choppers, electronic welders, induction heating and others where fast switching characteristics are required. Major Ratings and Characteristics Parameters IRK.F180.. Units 180 A 85 °C 400 A @ 50Hz 7130 A @ 60Hz 7470 A @ 50Hz 255 KA 2s @ 60Hz 232 KA 2s 2550 KA 2√s tq 20 and 25 µs trr 2 µs IT(AV) @ TC IT(RMS) ITSM 2 I t I2√t VDRM / V RRM up to 1200 TJ - 40 to 125 range www.irf.com V o C 1 IRK.F180.. Series Bulletin I27100 rev. C 03/01 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number IRK.F180- Voltage VRRM/VDRM, maximum repetitive VRSM , maximum non- IRRM/I DRM max. Code peak reverse voltage repetitive peak rev. voltage @ T J = 125°C V V mA 08 800 800 12 1200 1200 50 Current Carrying Capacity ITM ITM Frequency f o 180 el ITM Units 100µs 180 el o 50Hz 370 530 565 800 2400 3150 A 400Hz 435 650 670 1000 1540 2050 A 2500Hz 290 430 490 720 610 830 A 5000Hz 240 345 390 540 390 540 A 10000Hz 170 270 290 390 - - A 50 50 50 50 50 Recovery voltage Vr 50 Voltage before turn-on Vd 80%VDRM 80%VDRM V 80%VDRM V Rise of on-state current di/dt 50 50 - - - - A/µs Case temperature 85 60 85 60 85 60 °C Equivalent values for RC circuit 10Ω/0.47µF 10Ω/0.47µF 10Ω/0.47µF On-state Conduction Parameter IT(AV) IRK.F180.. Units Conditions Maximum average on-state current 180 A @ Case temperature 85 °C 180° conduction, half sine wave IT(RMS) Maximum RMS current 400 A as AC switch ITSM Maximum peak, one-cycle, 7130 A t = 10ms No voltage non-repetitive surge current 7470 t = 8.3ms reapplied 6000 t = 10ms 100% VRRM 6280 t = 8.3ms reapplied Sinusoidal half wave, t = 10ms No voltage Initial TJ = 125°C 232 t = 8.3ms reapplied 180 t = 10ms 100% VRRM 164 t = 8.3ms reapplied I2t I2 √t Maximum I2 t for fusing Maximum I2 √t for fusing 255 2550 KA2 s KA2√s t = 0 to 10ms, no voltage reapplied 1.30 VT(TO)2 High level value of threshold voltage 1.38 r t1 Low level value of on-state slope resistance 0.90 r t2 High level value of on-state slope resistance 0.71 VTM Maximum on-state voltage drop 1.84 V IH Maximum holding current 600 mA TJ = 25°C, IT > 30 A IL Typical latching current 1000 mA TJ = 25°C, VA = 12V, Ra = 6Ω, Ig = 1A 2 V (16.7% x π x I T(AV) < I < π x I T(AV)), TJ = TJ max. VT(TO)1 Low level value of threshold voltage (I > π x IT(AV) ), TJ = TJ max. mW (16.7% x π x I T(AV) < I < π x I T(AV)), TJ = TJ max. (I > π x IT(AV) ), TJ = TJ max. Ipk = 600A, TJ = TJ max., tp = 10ms sine pulse www.irf.com IRK.F180.. Series Bulletin I27100 rev. C 03/01 Switching Parameter di/dt IRK.F180.. Maximum non-repetitive rate of rise 800 Units Conditions A/µs Gate drive 20V, 20Ω, tr ≤ 1ms, VD= 80% VDRM T J = 25°C trr Maximum recovery time tq Maximum turn-off time 2 µs K J 20 25 ITM = 350A, di/dt = -25A/µs, VR = 50V, TJ = 25°C ITM = 750A, T J = 125°C, di/dt = -25A/µs, µs VR = 50V, dv/dt = 400V/µs linear to 80% V DRM Blocking Parameter dv/dt IRK.F180.. Maximum critical rate of rise of off-state 1000 Units Conditions V/µs TJ = 125°C., exponential to = 67% VDRM 3000 V 50 Hz, circuit to base, TJ = 25°C, t = 1 s 50 mA voltage VINS RMS isolation voltage IRRM Maximum peak reverse and off-state IDRM leakage current TJ = 125°C, rated VDRM/VRRM applied Triggering Parameter IRK.F180.. Units Conditions P GM Maximum peak gate power 60 W f = 50 Hz, d% = 50 P G(AV) Maximum peak average gate power 10 W TJ = 125°C, f = 50Hz, d% = 50 IGM Maximum peak positive gate current 10 A TJ = 125°C, tp < 5ms - VGM Maximum peak negative gate voltage 5 V IGT Max. DC gate current required to trigger 200 mA V GT DC gate voltage required to trigger 3 V IGD DC gate current not to trigger 20 mA V GD DC gate voltage not to trigger 0.25 V TJ = 25°C, Vak 12V, Ra = 6 TJ = 125°C, rated VDRM applied Thermal and Mechanical Specifications Parameter IRK.F180.. TJ Max. junction operating temperature range - 40 to 125 T stg Max. storage temperature range - 40 to 150 R thJC Max. thermal resistance, junction to Units Conditions °C 0.125 K/W Per junction, DC operation 0.02 K/W Mounting surface flat and greased case R thC-hs Max. thermal resistance, case to heatsink Per module T Mounting torque ± 10% MAP to heatsink wt Approximate weight busbar to MAP www.irf.com 4 - 6 (35 - 53) 4 - 6 (35 - 53) 500 (17.8) A mounting compound is recommended. The torque should be rechecked after a period of 3 hours to allow (lb*in) for the spread of the compound. Use of cable lugs is not recommendd, busbars should be used and restrained during tightening. Threads must be g (oz) lubricated with a compound Nm 3 IRK.F180.. Series Bulletin I27100 rev. C 03/01 ∆RthJC Conduction (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction 180° 0.009 0.006 120° 0.010 0.011 90° 0.014 0.015 60° 0.020 0.020 30° 0.032 0.033 Units Conditions K/W TJ = 125°C Ordering Information Table Device Code IRK T F 180 1 2 3 4 - 12 H K 5 6 7 1 - Module type 2 - Circuit configuration 3 - Fast SCR 4 - Current rating: IT(AV) x 10 rounded 5 - Voltage code: Code x 100 = VRRM (See Voltage Ratings Table) 6 - dv/dt code: H ≤ 400V/µs 7 - tq code: K ≤ 20µs J ≤ 25µs NOTE: To order the Optional Hardware see Bulletin I27900 4 www.irf.com IRK.F180.. Series Bulletin I27100 rev. C 03/01 Outline Table - All dimensions in millimeters (inches) - Dimensions are nominal - Full engineering drawings are available on request - UL identification number for gate and cathode wire: UL 1385 - UL identification number for package: UL 94V0 M a xim um A llo w a ble C ase Tem pera ture ( C ) 130 IRKLF.. IRKUF.. IR K.F180.. Series R thJC (D C ) = 0.12 5 K/W 120 110 C o n d u ctio n A n g le 100 90 30 80 60 90 120 70 180 60 0 40 80 120 160 200 IRKVF.. M ax im um Allow a ble C ase Tem pera ture ( C ) IRKHF.. IRKTF.. IRKKF.. 130 IRKNF.. IR K.F1 8 0 .. Se ries R thJC (D C ) = 0 .1 2 5 K /W 120 110 C o n d u c tio n Pe rio d 100 90 30 60 80 90 120 70 1 80 DC 60 0 50 100 150 200 250 Averag e O n -state C urren t (A ) Averag e O n-state C urren t (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics www.irf.com 300 5 IRK.F180.. Series 1 80 1 20 90 60 30 300 250 200 RM S Lim it 150 C ond uctio n An gle 100 IRK.F1 80 .. Series Per Ju n ction T J = 1 25 C 50 0 0 20 40 60 80 100 120 140 160 180 M axim um Av erag e O n-state Po w e r Loss (W ) 350 450 DC 180 120 90 60 30 400 350 300 250 200 RM S Lim it 150 C on d u c tio n Pe riod 100 IRK.F18 0.. Series Per Junction T J = 12 5 C 50 0 0 50 200 250 300 A verag e O n-sta te C urre n t (A ) Fig. 4 - On-state Power Loss Characteristics 6500 A t A ny Rate d Loa d C o nd itio n A nd W ith Rate d V R RM A p plie d Fo llo w ing Surg e . In itial T J = 125 C @ 60 H z 0.0083 s @ 50 H z 0.0100 s 6000 5500 5000 4500 4000 3500 IRK.F18 0.. S eries Pe r Jun ctio n 3000 10 100 7500 M a xim um No n Rep etitiv e Surg e C urrent V ers us Pulse Tra in D ura tio n . C ontro l O f C o nduction May Not Be Maintained. In itial T J = 125 C N o V o lta g e R e a p p lie d Ra te d V RR MR e a pp lie d 7000 6500 6000 5500 5000 4500 4000 3500 3000 IRK.F180.. Series Pe r Jun ctio n 2500 0.01 Fig. 5 - Maximum Non-Repetitive Surge Current 1000 T J = 25 C T J = 12 5 C IR K.F1 80.. Series Per Ju n ctio n 100 1 2 3 4 5 6 7 In sta n ta n e o us O n -sta te V olta g e (V ) Fig. 7 - On-state Voltage Drop Characteristics 1 Fig. 6 - Maximum Non-Repetitive Surge Current Transient Therm al Im pedanc e Z thJC (K/W ) 10000 0.1 Pu ls e Train D uration (s) Nu m b er O f E qu a l Am plitu d e Half C yc le C u r re nt Pu lse s (N) Instan ta neous O n -state C urren t (A ) 150 Fig. 3 - On-state Power Loss Characteristics 1 6 100 A ve ra g e O n-sta te C urre n t (A) Pe a k H alf Sin e W av e O n-state C urre n t (A ) Pea k Ha lf Sine W a ve O n -state C urren t (A) M axim um Ave rag e O n -state Pow er Lo ss (W ) Bulletin I27100 rev. C 03/01 1 Ste a dy Sta te V a lue: R thJ C = 0.125 K/W (D C O p eratio n) 0.1 0.01 IRK.F180 .. Series Per Junctio n 0.001 0.001 0.01 0.1 1 10 100 Sq u are W a ve Pulse D ura tio n (s) Fig. 8 - Thermal Impedance ZthJC Characteristics www.irf.com IRK.F180.. Series 320 M axim um Re verse Rec o very C urre nt - Irr (A) M axim u m Re verse Rec ove ry C h arg e - Q rr ( C ) Bulletin I27100 rev. C 03/01 I TM = 1000 A 500 A 300 A 200 A 100 A 300 280 260 240 220 200 180 160 140 120 IRK.F 180.. Se ries T J = 125 C 100 80 10 20 30 40 50 60 70 80 90 100 180 I TM = 1000A 5 00A 3 00A 2 00A 1 00A 160 140 120 100 80 60 IRK.F180.. Series T J = 125 C 40 20 10 20 30 40 50 60 70 80 90 100 Ra te O f Fa ll O f Fo rw a rd C urre n t - d i/d t (A/ s) Rate O f Fall O f Fo rw a rd C urren t - d i/dt (A/ s) Fig. 9 - Reverse Recovery Charge Characteristics Fig. 10 - Reverse Recovery Current Characteristics P eak On-state C urre nt ( A) 1E4 40 0 150 1E3 1000 50 H z 150 50 H z 1000 400 2 50 0 2 50 0 5 00 0 5 00 0 1E2 Snub b er circuit R s = 10 ohm s C s = 0.47 F V D = 80% V D R M IRK .F180.. Serie s Sinuso id a l p ulse T C= 85 C tp 1E1 1E1 1E2 tp 1E4 1E4 1E1 1E1 1E3 Snub b e r circ uit R s = 10 ohm s C s = 0.47 F V D = 80% V D RM IRK .F 180.. Series Sinusoid a l pulse T C= 60 C 1E2 Pulse Ba sewid th ( s) 1E3 1E4 Pulse Ba sewid th ( s) Fig. 11 - Frequency Characteristics Pea k On -sta te C urrent (A ) 1E4 50 H z 50 H z 150 1E3 1 00 0 150 40 0 400 1 00 0 2 50 0 2 50 0 5000 5 00 0 1E2 tp 1E1 1E1 IRK .F180.. Series Tra p ezo id a l p ulse T C = 8 5 C d i/d t 50A/ s 1E2 Snub b er circuit R s = 10 ohm s C s = 0.47 F V D = 80% V D R M 1E3 tp Snub b er circuit R s = 10 ohm s C s = 0.47 F V D= 80% V D RM IRK .F180.. Series Tra p ezoid a l p ulse T C = 85 C d i/d t 100A/ s 1E4 1E1 1E4 E1 Pulse Base w id th ( s) 1E2 1E3 1E4 Pulse Base w idth ( s) Fig. 12 - Frequency Characteristics www.irf.com 7 IRK.F180.. Series Bulletin I27100 rev. C 03/01 P eak O n -sta te C urren t (A ) 1E4 50 H z 50 H z 1 50 150 40 0 1E3 400 1 00 0 1 00 0 2 50 0 2 50 0 5 00 0 5000 1E2 tp Snub b er circuit R s = 10 ohm s C s = 0.47 F V D = 80% V D R M IRK .F1 80.. Se rie s Tra p ezoid a l p ulse T C = 60 C d i/d t 50A/ s 1E1 1E1 1E2 tp 1E1 1E4 1E4 E1 1E3 Snub b e r circuit R s = 10 ohm s C s = 0.47 F V D = 80% V D R M IRK .F 180.. Series Tra p ezoid a l p ulse T C = 60 C d i/d t 100A/ s 1E2 1E3 1E4 Pulse Ba se w idth ( s) Pulse Basewidth ( s) Fig. 13 - Frequency Characteristics 1E4 10 jou les p er p u lse 5 10 jou les p er p ulse 5 1 2 .5 0 .5 1 0 .2 5 1E3 0 .5 0 .1 0 .25 0 .1 0 .0 5 0 .0 5 1E2 tp IRK.F 180.. Series Sinuso id a l p ulse tp 1E1 1E1 1E2 IRK.F180.. Series Tra p ezo id a l p ulse d i/d t 50A / s 1E4 1E1 1E4 E1 1E3 1E2 1E3 1E4 Pulse Ba se w idth ( s) Pulse Base w id th ( s) Fig. 14 - Maximum On-state Energy Power Loss Characteristics 100 Recta n g u lar g a te p u lse a ) R eco m m en d ed lo a d lin e fo r ra ted d i/d t : 1 0V , 1 0o hm s b ) Reco m m en d ed lo a d line fo r <= 3 0% ra ted d i/d t : 1 0V , 20 o h m s (1) (2) (3) (4) PG M PG M PG M PG M = = = = 8W , tp = 25m s 20W , tp = 1m s 40W , tp = 5m s 80W , tp = 2.5m s 10 (a ) Tj=25 C 1 Tj=-40 C (b ) Tj=125 C Instantaneo us G ate Voltage (V) P ea k O n -state C urre n t ( A) 2 .5 (1) (2) (3) (4) VGD IG D 0.1 0.01 IRK.F180.. Serie s 0.1 Fre que ncy Lim ite d by PG (AV) 1 10 100 Instantaneo us G ate C urre nt (A) Fig. 15 - Gate Characteristics 8 www.irf.com