Bulletin I25177 rev. C 12/96 ST203S SERIES Stud Version INVERTER GRADE THYRISTORS Features 205A All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance Typical Applications Inverters Choppers Induction heating All types of force-commutated converters Major Ratings and Characteristics Parameters ST203S Units 205 A 85 °C 320 A @ 50Hz 5260 A @ 60Hz 5510 A @ 50Hz 138 KA2s @ 60Hz 126 KA2s 1000 to 1200 V 20 to 30 µs - 40 to 125 °C IT(AV) @ TC IT(RMS) ITSM I2t V DRM/V RRM tq range TJ www.irf.com case style TO-209AB (TO-93) 1 ST203S Series Bulletin I25177 rev. C 12/96 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage VDRM /VRRM , maximum VRSM , maximum I DRM/I RRM max. Code repetitive peak voltage non-repetitive peak voltage @ TJ = TJ max. V V mA 10 1000 1100 12 1200 1300 ST203S 40 Current Carrying Capability ITM Frequency ITM ITM o 180 el 180oel Units 100µs 50Hz 400Hz 580 570 400 380 900 940 640 650 6180 2980 4680 2150 1000Hz 520 320 930 630 1730 1200 2500Hz 370 210 780 510 890 580 Recovery voltage Vr Voltage before turn-on Vd 50 50 50 50 50 VDRM VDRM 50 V DRM A V Rise of on-state current di/dt 50 50 - - - - A/µs Case temperature 60 85 60 85 60 85 °C Equivalent values for RC circuit 47Ω / 0.22µF 47Ω / 0.22µF 47Ω / 0.22µF On-state Conduction Parameter IT(AV) Max. average on-state current @ Case temperature IT(RMS) Max. RMS on-state current ITSM ST203S Units 205 A 85 °C 320 Max. peak, one half cycle, 5260 non-repetitive surge current 5510 Maximum I2t for fusing DC @ 76°C case temperature A 2 reapplied t = 10ms 100% VRRM t = 8.3ms reapplied Sinusoidal half wave, 138 t = 10ms No voltage Initial TJ = TJ max 126 t = 8.3ms reapplied KA2s 89 Maximum I2√t for fusing No voltage t = 8.3ms 4630 98 I 2 √t 180° conduction, half sine wave t = 10ms 4420 I 2t Conditions 1380 KA2 √s t = 10ms 100% VRRM t = 8.3ms reapplied t = 0.1 to 10ms, no voltage reapplied www.irf.com ST203S Series Bulletin I25177 rev. C 12/96 On-state Conduction Parameter V TM ST203S Max. peak on-state voltage 1.72 V T(TO)1 Low level value of threshold 1.17 voltage V T(TO)2 High level value of threshold voltage rt 1 Low level value of forward slope resistance rt 2 High level value of forward slope resistance Units ITM= 600A, TJ = TJ max, t p = 10ms sine wave pulse V 0.92 mΩ Maximum holding current 600 Typical latching current 1000 mA T(AV) ), T J = TJ max. (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x I 0.87 IL (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x I 1.20 IH Conditions ), TJ = TJ max. T(AV) T J = 25°C, I T > 30A T J = 25°C, VA = 12V, Ra = 6Ω, I G = 1A Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current t t d q Typical delay time Max. turn-off time ST203S 1000 Units Conditions A/µs TJ = TJ max, VDRM = rated VDRM 0.79 Min 20 Max 30 ITM = 2 x di/dt TJ = 25°C, VDM = rated VDRM, ITM = 50A DC, tp= 1µs µs Resistive load, Gate pulse: 10V, 5Ω source TJ = TJ max, ITM = 300A, commutating di/dt = 20A/µs VR = 50V, tp = 500µs, dv/dt: see table in device code Blocking Parameter ST203S Units Conditions T J = TJ max., linear to 80% VDRM, higher value available on request dv/dt Maximum critical rate of rise of off-state voltage 500 V/µs IRRM IDRM Max. peak reverse and off-state leakage current 40 mA ST203S Units TJ = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM Maximum peak gate power PG(AV) Maximum average gate power 10 IGM Max. peak positive gate current 10 +VGM Maximum peak positive gate voltage 20 -V GM Maximum peak negative gate voltage 5 IGT Max. DC gate current required to trigger VGT Max. DC gate voltage required to trigger W TJ = TJ max, f = 50Hz, d% = 50 A TJ = TJ max, tp ≤ 5ms V T J = TJ max, tp ≤ 5ms 200 mA 3 V T J = 25°C, V A = 12V, Ra = 6Ω IGD Max. DC gate current not to trigger 20 mA VGD Max. DC gate voltage not to trigger 0.25 V www.irf.com Conditions 60 T J = TJ max, rated VDRM applied 3 ST203S Series Bulletin I25177 rev. C 12/96 Thermal and Mechanical Specifications Parameter ST203S Units TJ Max. junction operating temperature range -40 to 125 Tstg Max. storage temperature range -40 to 150 RthJC Max. thermal resistance, junction to case 0.105 RthCS Max. thermal resistance, case to heatsink 0.04 T Mounting torque, ± 10% wt Case style °C DC operation K/W 31 Nm (275) (Ibf-in) 24.5 Nm (210) (Ibf-in) 280 g Approximate weight Conditions TO-209AB (TO-93) Mounting surface, smooth, flat and greased Non lubricated threads Lubricated threads See Outline Table ∆RthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units 180° 0.016 0.012 120° 0.019 0.020 90° 0.025 0.027 60° 0.036 0.037 30° 0.060 0.060 K/W Conditions TJ = TJ max. Ordering Information Table Device Code ST 20 3 S 12 P F J 0 1 2 3 4 5 6 7 8 9 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn off 4 - S = Compression bonding Stud 5 - Voltage code: Code x 100 = VRRM (See Voltage Ratings table) 6 - P = Stud base 3/4" 16UNF-2A 7 - Reapplied dv/dt code (for t q test condition) 8 - t q code - 0 = Eyelet terminals (Gate and Aux. Cathode Leads) 10 M = Stud base metric threads M16/ x 1.5 9 1 = Fast-on terminals (Gate and Aux. Cathode Leads) 2 = Flag terminals (For Cathode and Gate Terminals) 10 - Critical dv/dt: dv/dt - tq combinations available dv/dt (V/µs) 20 20 CK tq(µs) 25 CJ 30 CH 50 DK DJ DH 100 EK EJ EH 200 -FJ * FH 400 --HH *Standard part number. All other types available only on request. None = 500V/µsec (Standard value) L 4 = 1000V/µsec (Special selection) www.irf.com ST203S Series Bulletin I25177 rev. C 12/96 Outline Table CERAMIC HOUSING 19 (0.75) MAX. MI N. 4 (0.16) MAX. 7) 8.5 (0.33) DIA. .86 )M IN . 9 .5 (0 .3 4.3 (0.17) DIA. 22 (0.039 s.i.) RED SILICON RUBBER Fast-on Terminals 10 (0.39) C.S. 0.4mm 2 RED CATHODE AMP. 280000-1 REF-250 (0.0006 s.i.) WHITE GATE 220 (8.66) +- 10 (0.39) WHITE SHRINK MAX. 27.5 (1.08) MAX. DIA. 27.5 (1.08) M AX. 16 (0.63) MAX. RED SHRINK 38.5 (1 .52) 90 (3.54) MIN. +I 210 (8.26) (0 FLEXIBLE LEAD C.S. 25mm 2 SW 32 Case Style TO-209AB (TO-93) 3/4"-16UNF-2A * All dimensions in millimeters (inches) 35 (1.38) MAX. * FOR METRIC DEVICE : M16 x 1.5 - LENGHT 21 (0.83) MAX. CERAMIC HOUSING 22 (0.89) FLAG TERMINALS DIA. 6.5 (0.25) Case Style TO-209AB (TO-93) Flag All dimensions in millimeters (inches) DIA. 27.5 (1.08) MAX. 16 (0.63) MAX. 38.5 (1.52) MAX. 1.5 (0.06) DIA. 27.5 (1.08) MAX. 80 ( 3.15) MAX. 13 (0.51) 14 (0.55) SW 32 3/4"-16UNF-2A* *FOR METRIC DEVICE. M16 X 1.5 - LENGHT 21 (0.83) MAX. 3 (0.12) www.irf.com 5 ST203S Series Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) Bulletin I25177 rev. C 12/96 130 ST203S Series R thJC (DC) = 0.105 K/W 120 110 Conduction Angle 100 30° 60° 90° 120° 90 180° 80 0 40 80 120 160 200 240 130 ST203S Series R thJC (DC) = 0.105 K/W 120 110 Conduction Period 100 90 30° 80 90° 120° 180° 70 0 50 100 150 200 250 DC 300 350 Average On-state Current (A) Average On-state Current (A) Fig. 2 - Current Ratings Characteristics Fig. 1 - Current Ratings Characteristics 350 W K/ ST203S Series TJ = 125°C R K /W Conduction Angle 0.8 50 a el t -D K/ W 0. 5 100 8 0. 0 K/ W 0. 4 150 = K/ W 0. 3 RMS Limit SA R th 0. 2 W K/ 200 W K/ 250 0.1 180° 120° 90° 60° 30° 300 16 0. Maximum Average On-state Power Loss (W) 60° K/W 1.2 K/ W 0 0 40 80 120 160 200 240 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Average On-state Current (A) 500 DC 180° 120° 90° 60° 30° 450 350 300 R 0. 1 0 .1 A 400 S th Maximum Average On-state Power Loss (W) Fig. 3 - On-state Power Loss Characteristics K/ 6K 0.2 250 W = 0. 08 /W K/W K/ W -D el ta R 0.3 K 200 RMS Limit 0 .4 Conduction Period 150 ST203S Series TJ = 125°C 100 50 /W K/W 0.5 K/W 0 .8 K/ W 1.2 K/W 0 0 50 100 150 200 250 300 Average On-state Current (A) 350 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 4 - On-state Power Loss Characteristics 6 www.irf.com ST203S Series Bulletin I25177 rev. C 12/96 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 4500 4000 3500 3000 ST203S Series 2500 2000 1 10 5500 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) 5000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control 5000 Of Conduction May Not Be Maintained. Initial TJ = 125°C 4500 No Voltage Reapplied Rated VRRM Reapplied 4000 3500 3000 2500 ST203S Series 2000 0.01 100 Fig. 5 - Maximum Non-repetitive Surge Current ST203S Series 1000 TJ = 25°C TJ = 125°C 100 1 1.5 2 2.5 3 3.5 4 1 Steady State Value R thJC = 0.105 K/W (DC Operation) 0.1 0.01 ST203S Series 0.001 0.001 ITM = 500 A 300 A 200 A 100 A 100 50 A 50 0 0 20 40 60 80 100 Rate Of Fall Of On-state Current - di/dt (A/µs) Fig. 9 - Reverse Recovered Charge Characteristics www.irf.com Maximum Reverse Recovery Current - Irr (A) Maximum Reverse Recovery Charge - Qrr (µC) 250 150 0.1 1 10 Fig. 8 - Thermal Impedance ZthJC Characteristic Fig. 7 - On-state Voltage Drop Characteristics ST203S Series TJ = 125 °C 0.01 Square Wave Pulse Duration (s) Instantaneous On-state Voltage (V) 200 1 Fig. 6 - Maximum Non-repetitive Surge Current Transient Thermal Impedance Z thJC (K/W) Instantaneous On-state Current (A) 10000 0.1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cycle Current Pulses (N) 160 ITM = 500 A 300 A 200 A 100 A 50 A 140 120 100 80 60 40 ST203S Series TJ = 125 °C 20 0 0 20 40 60 80 100 Rate Of Fall Of On-state Current - di/dt (A/µs) Fig. 10 - Reverse Recovery Current Characteristics 7 ST203S Series Bulletin I25177 rev. C 12/96 Peak On-state Current (A) 1E4 Snubber circuit R s = 47 ohms Cs = 0.22 µF V D = 80% V DRM 1000 1500 1E3 500 400 200 100 Snubber circuit R s = 47 ohms C s = 0.22 µF V D = 80% V DRM 50 Hz 500 1000 2500 200 400 100 50 Hz 1500 3000 2500 5000 3000 ST203S Series Sinusoidal pulse TC = 60°C tp 1E2 1E1 1E2 5000 tp 1E1 1E41E1 1E4 1E3 1E2 ST203S Series Sinusoidal pulse T C = 85°C 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 11 - Frequency Characteristics Peak On-state Current (A) 1E4 Snubber circuit R s = 47 ohms C s = 0.22 µF V D = 80% V DRM Snubber circuit R s = 47 ohms C s = 0.22 µF V D = 80% VDRM 1E3 1500 2500 1000 100 400 200 500 50 Hz 500 50 Hz 1500 3000 ST203S Series Trapezoidal pulse TC = 60°C di/dt = 50A/µs 5000 1E2 1E1 400 200 100 1000 1E2 1E3 2500 ST203S Series Trapezoidal pulse TC = 85°C di/dt = 50A/µs 3000 5000 1E1 1E4 1E41E1 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 12 - Frequency Characteristics Peak On-state Current (A) 1E4 Snubber circuit R s = 47 ohms C s = 0.22 µF V D = 80% VDRM Snubber circuit R s = 47 ohms C s = 0.22 µF V D = 80% VDRM 500 1E3 400 tp 50 Hz 200 100 400 1000 50 Hz 200 100 500 1500 1000 2500 1500 3000 ST203S Series Trapezoidal pulse TC = 60°C di/dt = 100A/µs tp 1E2 1E1 ST203S Series Trapezoidal pulse TC = 85°C di/dt = 100A/µs 1E2 1E3 2500 3000 1E1 1E41E1 1E4 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 13 - Frequency Characteristics 8 www.irf.com ST203S Series Bulletin I25177 rev. C 12/96 1E5 tp di/dt = 50A/µs 1E4 20 joules per pulse 0.4 1E3 1 4 2 20 joules per pulse 7.5 2 5 10 1 0.2 0.5 0.1 0.3 0.2 0.1 1E2 ST203S Series Sinusoidal pulse tp 1E1 1E1 1E2 1E41E1 1E4 1E1 1E3 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 14 - Maximum On-state Energy Power Loss Characteristics 100 Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 µs b) Recommended load line for <=30% rated di/dt : 10V, 10ohms 10 tr<=1 µs (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, tp = 20ms tp = 10ms tp = 5ms tp = 3.3ms (a) (b) Tj=25 °C 1 Tj=-40 °C Tj=125 °C Instantaneous Gate Voltage (V) Peak On-state Current (A) ST203S Series Rectangular pulse (1) (2) (3) (4) VGD IGD 0.1 0.001 0.01 Device: ST203S Series 0.1 Frequency Limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Fig. 15 - Gate Characteristics www.irf.com 9