Bulletin I27133 rev. D 09/97 IRK.105 SERIES NEW ADD-A-pakTM Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features Electrically isolated: DBC base plate 3500 VRMS isolating voltage Standard JEDEC package Simplified mechanical designs, rapid assembly Auxiliary cathode terminals for wiring convenience High surge capability Wide choice of circuit configurations Large creepage distances UL E78996 approved 105 A Description These IRK series of NEW ADD-A-paks use power diodes and thyristors in a variety of circuit configurations. The semiconductor chips are electrically isolated from the base plate, allowing common heatsinks and compact assemblies to be built. They can be interconnected to form single phase or three phase bridges or AC controllers. These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, and temperature and motor speed control circuits. Major Ratings and Characteristics Parameters IRK.105 Units 105 A IO(RMS) (*) 235 A ITSM @ 50Hz 1785 A IT(AV) or IF(AV) @ 85°C IFSM @ 60Hz 1870 A I2t @ 50Hz 15.91 KA2s @ 60Hz 14.52 KA2s 159.1 KA 2√s I2√t VRRM range 400 to 1600 V TSTG - 40 to 150 o - 40 to130 o TJ C C (*) As AC switch. www.irf.com 1 IRK.105 Series Bulletin I27133 rev. D 09/97 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage Code IRK.105 VRRM , maximum repetitive peak reverse voltage VRSM , maximum VDRM , max. repetitive IRRM non-repetitive peak off-state voltage, IDRM peak reverse voltage gate open circuit 130°C - V V V 04 400 500 400 mA 06 600 700 600 08 800 900 800 10 1000 1100 1000 12 1200 1300 1200 14 1400 1500 1400 16 1600 1700 1600 20 On-state Conduction Parameters IT(AV) IRK.105 current (Thyristors) IF(AV) Units Conditions Max. average on-state 180o conduction, half sine wave, 105 Max. average forward TC = 85oC current (Diodes) IO(RMS) Max. continuous RMS on-state current. As AC switch 235 I(RMS) A or ITSM Max. peak, one cycle 1785 t=10ms No voltage or non-repetitive on-state 1870 t=8.3ms reapplied IFSM or forward current 1500 t=10ms 100% VRRM 1570 t=8.3ms reapplied 2000 t=10ms T J = 25o C, I2t Max. I 2t for fusing t=8.3ms no voltage reapplied t=10ms No voltage 14.52 t=8.3ms reapplied 11.25 t=10ms 100% VRRM KA2s 18.30 Max. I2√t for fusing (1) 159.1 VT(TO) Max. value of threshold 0.80 r t 0.85 Max. value of on-state 2.37 slope resistance (2) 2.25 VTM Max. peak on-state or VFM forward voltage di/dt Max. non-repetitive rate of rise of turned on K A2√s Initial T J = TJ max. t=8.3ms reapplied t=10ms T J = 25o C, t=8.3ms no voltage reapplied t= 0.1 to 10ms, no voltage reappl. TJ =TJ max Low level (3) V mΩ 1.64 V 150 A/µs TJ = TJ max High level (4) Low level (3) TJ = TJ max High level (4) ITM = π x IT(AV) TJ = 25°C IFM = π x IF(AV) TJ = 25o C, from 0.67 VDRM , ITM =π x IT(AV), I = 500mA, g tr < 0.5 µs, t p > 6 µs current IH Max. holding current 200 IL Max. latching current 400 TJ = 25oC, anode supply = 6V, mA (1) I2t for time tx = I2√t x √tx Initial T J = TJ max. 2100 20.00 voltage (2) Sinusoidal half wave, 15.91 10.27 I2√t I(RMS) resistive load, gate open circuit TJ = 25oC, anode supply = 6V, resistive load (2) Average power = VT(TO) x IT(AV) + r t x (IT(RMS))2 (3) 16.7% x π x IAV < I < π x IAV (4) I > π x IAV 2 www.irf.com IRK.105 Series Bulletin I27133 rev. D 09/97 Triggering Parameters PGM IRK. 105 Max. peak gate power PG(AV) Max. average gate power IGM 3 Max. peak gate current 3 -VGM Max. peak negative W A Max. gate voltage 4.0 required to trigger 2.5 V VGD Max. gate current 270 required to trigger 150 Max. gate voltage T J = - 40°C mA T J = 25°C Anode supply = 6V resistive load Anode supply = 6V resistive load 80 T J = 125°C 0.25 V TJ = 125 C, rated VDRM applied 6 mA TJ = 125oC, rated VDRM applied IRK.105 Units 20 mA o that will not trigger IGD T J = - 40°C T J = 25°C T J = 125°C 1.7 IGT Conditions 10 gate voltage VGT Units 12 Max. gate current that will not trigger Blocking Parameters IRRM Max. peak reverse and IDRM off-state leakage current Conditions TJ = 130oC, gate open circuit at VRRM, VDRM VINS RMS isolation voltage 2500 (1 min) 50 Hz, circuit to base, all terminals V 3500 (1 sec) dv/dt Max. critical rate of rise of off-state voltage (5) 500 shorted V/µs TJ = 130oC, linear to 0.67 VDRM, gate open circuit (5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT105/16 S90. Thermal and Mechanical Specifications Parameters IRK.105 TJ Junction operating temperature range - 40 to 130 Tstg Storage temp. range - 40 to 150 Units Conditions °C RthJC Max. internal thermal resistance, junction 0.135 to case K/W RthCS Typical thermal resistance case to heatsink T Mounting torque ± 10% to heatsink busbar wt Approximate weight Case style www.irf.com Per module, DC operation Mounting surface flat, smooth and greased. Flatness < 0.03 mm; roughness < 0.02 mm 0.1 5 Nm 3 83 (3) TO-240AA A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound g (oz) JEDEC 3 IRK.105 Series Bulletin I27133 rev. D 09/97 ∆R Conduction (per Junction) (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) Devices IRK.105 Sine half wave conduction Rect. wave conduction 180 o 120o 90 o 60 o 30 o 180o 120 o 90 o 60 o 30 o 0.04 0.05 0.06 0.08 0.12 0.03 0.05 0.06 0.08 0.12 Units °C/W Outlines Table IRKT105/.. (*) IRKH105/.. (*) Faston tab. 2.8 x 0.8 6.1 ± 0.3 30 ± 0.1 (1.18 ± 0.04) Pitch 4.0 ± 0.2 (0.16 ± 0.01) 3 1 4 5 2 (0.24 ± 0.01) 24 ± 0.5 (0.94 ± 0.02) 29 ± 0.5 (1.13 ± 0.02) 30 ± 0.1 (1.18 ± 0.04) 30 ± 0.5 (1.18 ± 0.02) 20.5 ± 0.75 (0.81 ± 0.03) 76 3 1 4 5 2 6.3 ± 0.3 (0.25 ± 0.01) 20 ± 0.5 (0.79 ± 0.02) 20 ± 0.5 (0.79 ± 0.02) 20 ± 0.5 (0.79 ± 0.02) 20 ± 0.5 (0.79 ± 0.02) 15 ± 0.5 (0.59 ± 0.02) 15.5 ± 0.5 (0.61 ± 0.02) (0.11 x 0. 03) Pitch 4.0 ± 0.2 (0.16 ± 0.01) 6.1 ± 0.3 6.3 ± 0.3 (0.25 ± 0.01) 20.5 ± 0.75 (0.81 ± 0.03) 18 R EF. (0.71) Screws M5 x 0.8 Faston tab. 2.8 x 0.8 (0.11 x 0.03) 29 ± 0.5 (1.13 ± 0.02) 30 ± 0.5 (1.18 ± 0.02) 15.5 ± 0.5 (0.61 ± 0.02) (0.24 ± 0.01) 24 ± 0.5 5.8 ± 0.25 (0.94 ± 0.02) (0.23 ± 0.01) 18 REF. (0.71) Screws M5 x 0.8 15 ± 0.5 (0.59 ± 0.02) 80 ± 0.3 (3.15 ± 0.01) 80 ± 0.3 (3.15 ± 0.01) 92 ± 0.5 (3.62 ± 0.02) 92 ± 0.5 (3.62 ± 0.02) IRKL105/.. (*) 18 REF. (0.71) Screws M5 x 0.8 15.5 ± 0.5 (0.61 ± 0.02) Faston tab. 2.8 x 0.8 30 ± 0.1 (1.18 ± 0.04) Pitch 4.0 ± 0.2 (0.16 ± 0.01) 76 3 2 1 20.5 ± 0.75 (0.81 ± 0.03) 6.1 ± 0.3 6.3 ± 0.3 (0.25 ± 0.01) (0.24 ± 0.01) 24 ± 0.5 (0.94 ± 0.02) 29 ± 0.5 (1.13 ± 0.02) 30 ± 0.5 (1.18 ± 0.02) (0.11 x 0.03) 20 ± 0.5 (0.79 ± 0.02) 20 ± 0.5 (0.79 ± 0.02) 15 ± 0.5 (0.59 ± 0.02) 80 ± 0.3 (3.15 ± 0.01) 92 ± 0.5 (3.62 ± 0.02) All dimensions in millimeters (inches) (*) For terminals connections, see Circuit configurations Table NOTE: To order the Optional Hardware see Bulletin I27900 4 www.irf.com IRK.105 Series Bulletin I27133 rev. D 09/97 Circuit Configurations Table IRKT IRKH IRKL (1) ~ (1) ~ (1) ~ + (2) + (2) + (2) (3) (3) (3) G1 K1 (4) (5) K2 G2 (7) (6) G1 K1 (4) (5) K2 G2 (7) (6) Ordering Information Table Device Code T 105 1 2 3 / IRK.106 types With no auxiliary cathode 16 S90 6 IRK 5 13.8 (0.53) 4 4 1 - Module type 2 - Circuit configuration (See Circuit Configuration table) 3 - Current code * * 4 - Voltage code (See Voltage Ratings table) To specify change: dv/dt code: e.g. : IRKT106/16 etc. 5 - * * Available with no auxiliary cathode. S90 = dv/dt 1000 V/µs 105 to 106 130 IRK.105.. Series R thJC (DC) = 0.27 K/W 120 110 Conduction Angle 100 90 30° 60° 90° 80 120° 180° 70 0 20 40 60 80 100 120 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics www.irf.com Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) No letter = dv/dt 500 Vµs 130 IRK.105.. Series R (DC) = 0.27 K/W thJC 120 110 Conduction Period 100 90 30° 60° 90° 80 120° 180° DC 70 0 20 40 60 80 100 120 140 160 180 Average On-state Current (A) Fig. 2 - Current Ratings Characteristics 5 IRK.105 Series 180° 120° 90° 60° 30° 140 120 100 RMS Limit 80 60 Conduction Angle 40 IRK.105.. Series Per Junction T J = 130°C 20 0 0 20 40 60 80 100 200 Maximum Average On-state Power Loss (W) 160 120 DC 180° 120° 90° 60° 30° 180 160 140 120 100 RMS Limit 80 Conduction Period 60 IRK.105.. Series Per Junction T J = 130°C 40 20 0 0 20 40 60 80 100 120 140 160 180 Average On-state Current (A) Average On-state Current (A) Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics 1600 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J= 130°C 1500 1400 @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1300 1200 1100 1000 900 IRK.105.. Series Per Junction 800 700 1 10 1800 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) Maximum Average On-state Power Loss (W) Bulletin I27133 rev. D 09/97 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J = 130°C No Voltage Reapplied Rated VRRMReapplied 1600 1400 1200 1000 800 IRK.105.. Series Per Junction 600 0.01 100 1 0.1 Number Of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current K/ W R 0 .7 Conduction Angle 1K 100 IRK.105.. Series Per Module T J = 130°C 50 a elt -D 0.5 150 W 0. 3 K/ 200 W K/ 250 1 0. 180° 120° 90° 60° 30° = SA R th 300 2 0. Maximum Total On-state Power Loss (W) 350 K/ W K /W /W 2 K/W 0 0 40 80 120 160 200 Total RMS Output Current (A) 240 0 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (°C) Fig. 7 - On-state Power Loss Characteristics 6 www.irf.com IRK.105 Series Bulletin I27133 rev. D 09/97 hS R t 180° (Sine) 180° (Rect) 1 0. -D ta el 0. 2K W K/ 400 = 500 A /W R Maximum Total Power Loss (W) 600 0. 300 200 2 x IRK.105.. Series Single Phase Bridge Connected T J = 130°C 100 3K /W 0. 5 K/W 0 .7 K/ W 1 K/ W 2 K/W 0 0 40 80 120 0 200 160 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (°C) Total Output Current (A) Fig. 8 - On-state Power Loss Characteristics 800 R SA th Maximum Total Power Loss (W) 900 700 = 0. 1 600 120° (Rect) 500 0. 2 400 0. 3 300 3 x IRK.105.. Series Three Phase Bridge Connected T J = 130°C 200 100 0 .5 K/ W -D el ta K/ W R K/W K/W 1 K/W 0 0 40 80 120 160 200 240 0 280 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (°C) Total Output Current (A) Fig. 9 - On-state Power Loss Characteristics Instantaneous On-state Current (A) 1000 100 T J= 25°C T J= 130°C 10 IRK.105.. Series Per Junction 1 0 0.5 1 1.5 2 2.5 3 3.5 Instantaneous On-state Voltage (V) Fig. 10 - On-state Voltage Drop Characteristics www.irf.com 7 IRK.105 Series Maximum Reverse Recovery Current - Irr (A) Maximum Reverse Recovery Charge - Qrr (µC) Bulletin I27133 rev. D 09/97 700 I TM = 200 A IRK.105.. Series T J= 125 °C 600 100 A 500 50 A 400 20 A 300 10 A 200 100 10 20 30 40 50 60 70 80 90 100 140 120 J 100 A 100 50 A 80 20 A 10 A 60 40 20 10 Rate Of Fall Of On-state Current - di/dt (A/µs) 20 30 40 50 60 70 80 90 100 Rate Of Fall Of Forward Current - di/dt (A/µs) Fig. 12 - Recovery Current Characteristics Fig. 11 - Recovery Charge Characteristics Transient Thermal Impedance Z thJC (K/W) I TM = 200 A IRK.105.. Series T = 125 °C 1 Steady State Value: R thJC = 0.27 K/W (DC Operation) 0.1 IRK.105.. Series Per Junction 0.01 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 13 - Thermal Impedance ZthJC Characteristics Rectangular gate pulse a)Recommended load line for rated di/dt: 20 V, 20 ohms tr = 0.5 µs, tp >= 6 µs b)Recommended load line for <= 30% rated di/dt: 15 V, 40 ohms tr = 1 µs, tp >= 6 µs 10 (1) (2) (3) (4) TJ = -40 °C TJ = 125 °C 1 PGM = 200 W, tp = 300 µs PGM = 60 W, tp = 1 ms PGM = 30 W, tp = 2 ms PGM = 12 W, tp = 5 ms (a) (b) TJ = 25 °C Instantaneous Gate Voltage (V) 100 (4) (3) (2) (1) VGD IGD 0.1 0.001 0.01 IRK.105.. Series 0.1 1 Frequency Limited by PG(AV) 10 100 1000 Instantaneous Gate Current (A) Fig. 14- Gate Characteristics 8 www.irf.com