ETC IRKL105/06

Bulletin I27133 rev. D 09/97
IRK.105 SERIES
NEW ADD-A-pakTM Power Modules
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
Features
Electrically isolated: DBC base plate
3500 VRMS isolating voltage
Standard JEDEC package
Simplified mechanical designs, rapid assembly
Auxiliary cathode terminals for wiring convenience
High surge capability
Wide choice of circuit configurations
Large creepage distances
UL E78996 approved
105 A
Description
These IRK series of NEW ADD-A-paks use power
diodes and thyristors in a variety of circuit configurations. The semiconductor chips are electrically
isolated from the base plate, allowing common
heatsinks and compact assemblies to be built.
They can be interconnected to form single phase or
three phase bridges or AC controllers. These
modules are intended for general purpose high
voltage applications such as high voltage regulated
power supplies, lighting circuits, and temperature
and motor speed control circuits.
Major Ratings and Characteristics
Parameters
IRK.105
Units
105
A
IO(RMS) (*)
235
A
ITSM @ 50Hz
1785
A
IT(AV) or IF(AV)
@ 85°C
IFSM @ 60Hz
1870
A
I2t
@ 50Hz
15.91
KA2s
@ 60Hz
14.52
KA2s
159.1
KA 2√s
I2√t
VRRM range
400 to 1600
V
TSTG
- 40 to 150
o
- 40 to130
o
TJ
C
C
(*) As AC switch.
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1
IRK.105 Series
Bulletin I27133 rev. D 09/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage
Code
IRK.105
VRRM , maximum
repetitive
peak reverse voltage
VRSM , maximum
VDRM , max. repetitive IRRM
non-repetitive
peak off-state voltage, IDRM
peak reverse voltage
gate open circuit
130°C
-
V
V
V
04
400
500
400
mA
06
600
700
600
08
800
900
800
10
1000
1100
1000
12
1200
1300
1200
14
1400
1500
1400
16
1600
1700
1600
20
On-state Conduction
Parameters
IT(AV)
IRK.105
current (Thyristors)
IF(AV)
Units
Conditions
Max. average on-state
180o conduction, half sine wave,
105
Max. average forward
TC = 85oC
current (Diodes)
IO(RMS) Max. continuous RMS
on-state current.
As AC switch
235
I(RMS)
A
or
ITSM
Max. peak, one cycle
1785
t=10ms
No voltage
or
non-repetitive on-state
1870
t=8.3ms
reapplied
IFSM
or forward current
1500
t=10ms
100% VRRM
1570
t=8.3ms
reapplied
2000
t=10ms
T J = 25o C,
I2t
Max. I 2t for fusing
t=8.3ms
no voltage reapplied
t=10ms
No voltage
14.52
t=8.3ms
reapplied
11.25
t=10ms
100% VRRM
KA2s
18.30
Max. I2√t for fusing (1)
159.1
VT(TO) Max. value of threshold
0.80
r
t
0.85
Max. value of on-state
2.37
slope resistance (2)
2.25
VTM
Max. peak on-state or
VFM
forward voltage
di/dt
Max. non-repetitive rate
of rise of turned on
K A2√s
Initial T J = TJ max.
t=8.3ms
reapplied
t=10ms
T J = 25o C,
t=8.3ms
no voltage reapplied
t= 0.1 to 10ms, no voltage reappl. TJ =TJ max
Low level (3)
V
mΩ
1.64
V
150
A/µs
TJ = TJ max
High level (4)
Low level (3)
TJ = TJ max
High level (4)
ITM = π x IT(AV)
TJ = 25°C
IFM = π x IF(AV)
TJ = 25o C, from 0.67 VDRM ,
ITM =π x IT(AV), I = 500mA,
g
tr < 0.5 µs, t p > 6 µs
current
IH
Max. holding current
200
IL
Max. latching current
400
TJ = 25oC, anode supply = 6V,
mA
(1) I2t for time tx = I2√t x √tx
Initial T J = TJ max.
2100
20.00
voltage (2)
Sinusoidal
half wave,
15.91
10.27
I2√t
I(RMS)
resistive load, gate open circuit
TJ = 25oC, anode supply = 6V, resistive load
(2) Average power = VT(TO) x IT(AV) + r t x (IT(RMS))2
(3) 16.7% x π x IAV < I < π x IAV
(4) I > π x IAV
2
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IRK.105 Series
Bulletin I27133 rev. D 09/97
Triggering
Parameters
PGM
IRK. 105
Max. peak gate power
PG(AV) Max. average gate power
IGM
3
Max. peak gate current
3
-VGM Max. peak negative
W
A
Max. gate voltage
4.0
required to trigger
2.5
V
VGD
Max. gate current
270
required to trigger
150
Max. gate voltage
T J = - 40°C
mA
T J = 25°C
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
80
T J = 125°C
0.25
V
TJ = 125 C,
rated VDRM applied
6
mA
TJ = 125oC,
rated VDRM applied
IRK.105
Units
20
mA
o
that will not trigger
IGD
T J = - 40°C
T J = 25°C
T J = 125°C
1.7
IGT
Conditions
10
gate voltage
VGT
Units
12
Max. gate current
that will not trigger
Blocking
Parameters
IRRM
Max. peak reverse and
IDRM
off-state leakage current
Conditions
TJ = 130oC, gate open circuit
at VRRM, VDRM
VINS
RMS isolation voltage
2500 (1 min)
50 Hz, circuit to base, all terminals
V
3500 (1 sec)
dv/dt Max. critical rate of rise
of off-state voltage (5)
500
shorted
V/µs
TJ = 130oC, linear to 0.67 VDRM,
gate open circuit
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT105/16 S90.
Thermal and Mechanical Specifications
Parameters
IRK.105
TJ
Junction operating
temperature range
- 40 to 130
Tstg
Storage temp. range
- 40 to 150
Units
Conditions
°C
RthJC Max. internal thermal
resistance, junction
0.135
to case
K/W
RthCS Typical thermal resistance
case to heatsink
T
Mounting torque ± 10%
to heatsink
busbar
wt
Approximate weight
Case style
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Per module, DC operation
Mounting surface flat, smooth and greased.
Flatness < 0.03 mm; roughness < 0.02 mm
0.1
5
Nm
3
83 (3)
TO-240AA
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound
g (oz)
JEDEC
3
IRK.105 Series
Bulletin I27133 rev. D 09/97
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Devices
IRK.105
Sine half wave conduction
Rect. wave conduction
180 o
120o
90 o
60 o
30 o
180o
120 o
90 o
60 o
30 o
0.04
0.05
0.06
0.08
0.12
0.03
0.05
0.06
0.08
0.12
Units
°C/W
Outlines Table
IRKT105/.. (*)
IRKH105/.. (*)
Faston tab. 2.8 x 0.8
6.1 ± 0.3
30 ± 0.1
(1.18 ± 0.04)
Pitch 4.0 ± 0.2
(0.16 ± 0.01)
3
1
4 5
2
(0.24 ± 0.01)
24 ± 0.5
(0.94 ± 0.02)
29 ± 0.5
(1.13 ± 0.02)
30 ± 0.1
(1.18 ± 0.04)
30 ± 0.5
(1.18 ± 0.02)
20.5 ± 0.75
(0.81 ± 0.03)
76
3
1
4 5
2
6.3 ± 0.3
(0.25 ± 0.01)
20 ± 0.5
(0.79 ± 0.02)
20 ± 0.5
(0.79 ± 0.02)
20 ± 0.5
(0.79 ± 0.02)
20 ± 0.5
(0.79 ± 0.02)
15 ± 0.5
(0.59 ± 0.02)
15.5 ± 0.5
(0.61 ± 0.02)
(0.11 x 0. 03)
Pitch 4.0 ± 0.2
(0.16 ± 0.01)
6.1 ± 0.3
6.3 ± 0.3
(0.25 ± 0.01)
20.5 ± 0.75
(0.81 ± 0.03)
18 R EF.
(0.71)
Screws M5 x 0.8
Faston tab. 2.8 x 0.8
(0.11 x 0.03)
29 ± 0.5
(1.13 ± 0.02)
30 ± 0.5
(1.18 ± 0.02)
15.5 ± 0.5
(0.61 ± 0.02)
(0.24 ± 0.01)
24 ± 0.5
5.8 ± 0.25
(0.94 ± 0.02)
(0.23 ± 0.01)
18 REF.
(0.71)
Screws M5 x 0.8
15 ± 0.5
(0.59 ± 0.02)
80 ± 0.3
(3.15 ± 0.01)
80 ± 0.3
(3.15 ± 0.01)
92 ± 0.5
(3.62 ± 0.02)
92 ± 0.5
(3.62 ± 0.02)
IRKL105/.. (*)
18 REF.
(0.71)
Screws M5 x 0.8
15.5 ± 0.5
(0.61 ± 0.02)
Faston tab. 2.8 x 0.8
30 ± 0.1
(1.18 ± 0.04)
Pitch 4.0 ± 0.2
(0.16 ± 0.01)
76
3
2
1
20.5 ± 0.75
(0.81 ± 0.03)
6.1 ± 0.3
6.3 ± 0.3
(0.25 ± 0.01)
(0.24 ± 0.01)
24 ± 0.5
(0.94 ± 0.02)
29 ± 0.5
(1.13 ± 0.02)
30 ± 0.5
(1.18 ± 0.02)
(0.11 x 0.03)
20 ± 0.5
(0.79 ± 0.02)
20 ± 0.5
(0.79 ± 0.02)
15 ± 0.5
(0.59 ± 0.02)
80 ± 0.3
(3.15 ± 0.01)
92 ± 0.5
(3.62 ± 0.02)
All dimensions in millimeters (inches)
(*) For terminals connections, see Circuit configurations Table
NOTE: To order the Optional Hardware see Bulletin I27900
4
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IRK.105 Series
Bulletin I27133 rev. D 09/97
Circuit Configurations Table
IRKT
IRKH
IRKL
(1)
~
(1)
~
(1)
~
+
(2)
+
(2)
+
(2)
(3)
(3)
(3)
G1 K1
(4) (5)
K2 G2
(7) (6)
G1 K1
(4) (5)
K2 G2
(7) (6)
Ordering Information Table
Device Code
T
105
1
2
3
/
IRK.106 types
With no auxiliary cathode
16 S90
6
IRK
5
13.8 (0.53)
4
4
1
-
Module type
2
-
Circuit configuration (See Circuit Configuration table)
3
-
Current code * *
4
-
Voltage code (See Voltage Ratings table)
To specify change:
dv/dt code:
e.g. : IRKT106/16 etc.
5
-
* * Available with no auxiliary cathode.
S90 = dv/dt 1000 V/µs
105 to 106
130
IRK.105.. Series
R thJC (DC) = 0.27 K/W
120
110
Conduction Angle
100
90
30°
60°
90°
80
120°
180°
70
0
20
40
60
80
100
120
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
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Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
No letter = dv/dt 500 Vµs
130
IRK.105.. Series
R
(DC) = 0.27 K/W
thJC
120
110
Conduction Period
100
90
30°
60°
90°
80
120°
180°
DC
70
0
20
40
60
80 100 120 140 160 180
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
5
IRK.105 Series
180°
120°
90°
60°
30°
140
120
100
RMS Limit
80
60
Conduction Angle
40
IRK.105.. Series
Per Junction
T J = 130°C
20
0
0
20
40
60
80
100
200
Maximum Average On-state Power Loss (W)
160
120
DC
180°
120°
90°
60°
30°
180
160
140
120
100 RMS Limit
80
Conduction Period
60
IRK.105.. Series
Per Junction
T J = 130°C
40
20
0
0
20
40
60
80 100 120 140 160 180
Average On-state Current (A)
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
1600
At Any Rated Load Condition And With
Rated V RRM Applied Following Surge.
Initial T J= 130°C
1500
1400
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1300
1200
1100
1000
900
IRK.105.. Series
Per Junction
800
700
1
10
1800
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
Maximum Average On-state Power Loss (W)
Bulletin I27133 rev. D 09/97
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T J = 130°C
No Voltage Reapplied
Rated VRRMReapplied
1600
1400
1200
1000
800
IRK.105.. Series
Per Junction
600
0.01
100
1
0.1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Pulse Train Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
K/
W
R
0 .7
Conduction Angle
1K
100
IRK.105.. Series
Per Module
T J = 130°C
50
a
elt
-D
0.5
150
W
0.
3
K/
200
W
K/
250
1
0.
180°
120°
90°
60°
30°
=
SA
R th
300
2
0.
Maximum Total On-state Power Loss (W)
350
K/
W
K /W
/W
2 K/W
0
0
40
80
120
160
200
Total RMS Output Current (A)
240
0
20
40
60
80
100
120
140
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - On-state Power Loss Characteristics
6
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IRK.105 Series
Bulletin I27133 rev. D 09/97
hS
R t
180°
(Sine)
180°
(Rect)
1
0.
-D
ta
el
0.
2K
W
K/
400
=
500
A
/W
R
Maximum Total Power Loss (W)
600
0.
300
200
2 x IRK.105.. Series
Single Phase Bridge
Connected
T J = 130°C
100
3K
/W
0. 5
K/W
0 .7
K/ W
1 K/ W
2 K/W
0
0
40
80
120
0
200
160
20
40
60
80
100
120
140
Maximum Allowable Ambient Temperature (°C)
Total Output Current (A)
Fig. 8 - On-state Power Loss Characteristics
800
R
SA
th
Maximum Total Power Loss (W)
900
700
=
0.
1
600
120°
(Rect)
500
0. 2
400
0. 3
300
3 x IRK.105.. Series
Three Phase Bridge
Connected
T J = 130°C
200
100
0 .5
K/
W
-D
el
ta
K/
W
R
K/W
K/W
1 K/W
0
0
40
80
120
160
200
240
0
280
20
40
60
80
100
120
140
Maximum Allowable Ambient Temperature (°C)
Total Output Current (A)
Fig. 9 - On-state Power Loss Characteristics
Instantaneous On-state Current (A)
1000
100
T J= 25°C
T J= 130°C
10
IRK.105.. Series
Per Junction
1
0
0.5
1
1.5
2
2.5
3
3.5
Instantaneous On-state Voltage (V)
Fig. 10 - On-state Voltage Drop Characteristics
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7
IRK.105 Series
Maximum Reverse Recovery Current - Irr (A)
Maximum Reverse Recovery Charge - Qrr (µC)
Bulletin I27133 rev. D 09/97
700
I TM = 200 A
IRK.105.. Series
T J= 125 °C
600
100 A
500
50 A
400
20 A
300
10 A
200
100
10
20
30
40
50
60
70
80
90 100
140
120
J
100 A
100
50 A
80
20 A
10 A
60
40
20
10
Rate Of Fall Of On-state Current - di/dt (A/µs)
20
30
40
50
60
70
80
90 100
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 12 - Recovery Current Characteristics
Fig. 11 - Recovery Charge Characteristics
Transient Thermal Impedance Z thJC (K/W)
I TM = 200 A
IRK.105.. Series
T = 125 °C
1
Steady State Value:
R thJC = 0.27 K/W
(DC Operation)
0.1
IRK.105.. Series
Per Junction
0.01
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 13 - Thermal Impedance ZthJC Characteristics
Rectangular gate pulse
a)Recommended load line for
rated di/dt: 20 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30% rated di/dt: 15 V, 40 ohms
tr = 1 µs, tp >= 6 µs
10
(1)
(2)
(3)
(4)
TJ = -40 °C
TJ = 125 °C
1
PGM = 200 W, tp = 300 µs
PGM = 60 W, tp = 1 ms
PGM = 30 W, tp = 2 ms
PGM = 12 W, tp = 5 ms
(a)
(b)
TJ = 25 °C
Instantaneous Gate Voltage (V)
100
(4)
(3) (2)
(1)
VGD
IGD
0.1
0.001
0.01
IRK.105.. Series
0.1
1
Frequency Limited by PG(AV)
10
100
1000
Instantaneous Gate Current (A)
Fig. 14- Gate Characteristics
8
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