Smart High-Side Power Switch BTS640S2G Smart Sense High-Side Power Switch Product Summary Operating voltage On-state resistance Load current (ISO) Current limitation Features 5.0 ... 34 V 30 mΩ 12.6 A 24 A Vbb(on) RON IL(ISO) IL(SCr) • Short circuit protection • Current limitation • Proportional load current sense • CMOS compatible input Package • Open drain diagnostic output • Fast demagnetization of inductive loads TO220-7-11 TO263-7-2 TO220-7-12 • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Overload protection • Thermal shutdown 1 1 1 Standard (staggered) SMD Straight • Overvoltage protection including load dump (with external GND-resistor) • AEC qualified • Reverse battery protection (with external GND-resistor) • Green product (RoHS compliant) • Loss of ground and loss of Vbb protection • Electrostatic discharge (ESD) protection Application • µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads • All types of resistive, inductive and capacitve loads • Replaces electromechanical relays, fuses and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, proportional sense of load current, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Block Diagram 9 EE 9ROWDJH 2YHUYROWDJH &XUUHQW *DWH VRXUFH SURWHFWLRQ OLPLW SURWHFWLRQ 9 /RJLF ,1 67 9ROWDJH &KDUJHSXPS VHQVRU /HYHOVKLIWHU 5HFWLILHU (6' /RJLF /LPLWIRU XQFODPSHG LQGORDGV 2XWSXW 9ROWDJH GHWHFWLRQ 7HPSHUDWXUH VHQVRU ,6 , ,6 5 ,/ &XUUHQW 6HQVH /RDG 5 2 *1' 352)(7 *1' ,6 287 /RDG*1' 6LJQDO*1' Data Sheet 1 V1.1, 2008-19-08 Smart High-Side Power Switch BTS640S2G Pin Symbol 1 ST Function Diagnostic feedback: open drain, invers to input level 2 GND Logic ground 3 IN Input, activates the power switch in case of logical high signal 4 Vbb 5 IS Positive power supply voltage, the tab is shorted to this pin Sense current output, proportional to the load current, zero in the case of current limitation of load current 6&7 OUT (Load, L) Output, protected high-side power output to the load. Both output pins have to be connected in parallel for operation according this spec (e.g. kILIS). Design the wiring for the max. short circuit current Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection Symbol Vbb Vbb Values 43 34 Unit V V 60 V self-limited -40 ...+150 -55 ...+150 85 A °C 0,41 3,5 1.0 4.0 8.0 J Tj Start=-40 ...+150°C Load dump protection1) VLoadDump = VA + Vs, VA = 13.5V VLoad dump3) Load current (Short circuit current, see page 5) Operating temperature range Storage temperature range Power dissipation (DC), TC ≤ 25 °C Inductive load switch-off energy dissipation, single pulse IL Tj Tstg Ptot RI2)= 2 Ω, RL= 1 Ω, td= 200 ms, IN= low or high Vbb = 12V, Tj,start = 150°C, TC = 150°C const. IL = 12.6 A, ZL = 4,2 mH, 0 Ω: EAS IL = 4 A, ZL = 330 mH, 0 Ω: EAS Electrostatic discharge capability (ESD) IN: VESD (Human Body Model) ST, IS: out to all other pins shorted: W kV acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 R=1.5kΩ; C=100pF VIN IIN IST IIS Input voltage (DC) Current through input pin (DC) Current through status pin (DC) Current through current sense pin (DC) -10 ... +16 ±2.0 ±5.0 ±14 V mA see internal circuit diagrams page 8 1) 2) 3) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150 Ω resistor in the GND connection is recommended). RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator according to ISO 7637-1 and DIN 40839 Data Sheet 2 V1.1, 2008-19-08 Smart High-Side Power Switch BTS640S2G Thermal Characteristics Parameter and Conditions Thermal resistance Symbol chip - case: RthJC junction - ambient (free air): RthJA SMD version, device on PCB4): min ---- Values typ max -- 1.47 -75 33 -- Unit K/W Electrical Characteristics Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 12 V unless otherwise specified Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 4 to 6&7) Tj=25 °C: RON Tj=150 °C: -- 27 54 30 60 mΩ -- 50 -- mV 11.4 12.6 -- A IL(NOM) IL(GNDhigh) 4.0 -- 4.5 -- -8 A mA 9; not subject to production test, specified by design Turn-on time IN to 90% VOUT: Turn-off time IN to 10% VOUT: RL = 12 Ω, Tj =-40...+150°C ton toff 25 25 70 80 150 200 µs Slew rate on dV /dton 0.1 -- 1 V/µs -dV/dtoff 0.1 -- 1 V/µs IL = 5 A Output voltage drop limitation at small load currents (pin 4 to 6&7), see page 14 IL = 0.5 A VON(NL) Tj =-40...+150°C: Nominal load current, ISO Norm (pin 4 to 6&7) IL(ISO) VON = 0.5 V, TC = 85 °C Nominal load current, device on PCB4) TA = 85 °C, Tj ≤ 150 °C VON ≤ 0.5 V, Output current (pin 6&7) while GND disconnected or GND pulled up, Vbb=30 V, VIN= 0, see diagram page 10 to 30% VOUT, RL = 12 Ω, Tj =-40...+150°C Slew rate off 70 to 40% VOUT, RL = 12 Ω, Tj =-40...+150°C 4) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. Data Sheet 3 V1.1, 2008-19-08 Smart High-Side Power Switch BTS640S2G Parameter and Conditions at Tj = 25 °C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Operating Parameters Operating voltage 5) Undervoltage shutdown Undervoltage restart 5.0 3.2 -- --4.5 34 5.0 5.5 6.0 V V V ---- 4.7 -0.5 6.5 7.0 -- V 34 33 -41 43 --1 -47 43 ---52 V V V V ---- 4 12 -- 15 25 10 µA -- 1.2 3 mA Vbb(on) Tj =-40...+150°C: Vbb(under) Tj =-40...+25°C: Vbb(u rst) Tj =+150°C: Undervoltage restart of charge pump see diagram page 13 Tj =-40...+25°C: Vbb(ucp) Tj =25...150°C: Undervoltage hysteresis ∆Vbb(under) Tj =-40...+150°C: Unit V ∆Vbb(under) = Vbb(u rst) - Vbb(under) Overvoltage shutdown Overvoltage restart Overvoltage hysteresis Overvoltage protection6) Ibb=40 mA Vbb(over) Tj =-40...+150°C: Vbb(o rst) Tj =-40...+150°C: ∆Vbb(over) Tj =-40°C: Vbb(AZ) Tj =+25...+150°C Tj =-40...+150°C: Standby current (pin 4) Tj=-40...+25°C: Ibb(off) Tj= 150°C: IL(off) Off state output current (included in Ibb(off)) VIN=0 VIN=0, Operating current (Pin 2)7), VIN=5 V 5) 6) 7) µA Tj =-40...+150°C: IGND At supply voltage increase up to Vbb= 4.7 V typ without charge pump, VOUT ≈Vbb - 2 V Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150 Ω resistor in the GND connection is recommended). See also VON(CL) in table of protection functions and circuit diagram page 9. Add IST, if IST > 0, add IIN, if VIN>5.5 V Data Sheet 4 V1.1, 2008-19-08 Smart High-Side Power Switch BTS640S2G Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 12 V unless otherwise specified Protection Functions8) Initial peak short circuit current limit (pin 4 to 6&7) IL(SCp) Tj =-40°C: Tj =25°C: Tj =+150°C: Repetitive short circuit shutdown current limit IL(SCr) Tj = Tjt (see timing diagrams, page 12) Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL); IL= 40 mA, Tj =-40°C: Tj =+25..+150°C: Thermal overload trip temperature Thermal hysteresis Reverse battery (pin 4 to 2) 9) VON(CL) Tjt ∆Tjt -Vbb Reverse battery voltage drop (Vout > Vbb) IL = -5 A Tj=150 °C: -VON(rev) Values min typ max Unit 48 40 31 56 50 37 65 58 45 A -- 24 -- A 41 43 150 --- -47 -10 -- -52 --32 V °C K V -- 600 -- mV 4550 3300 5000 5000 6000 8000 4550 4000 5000 5000 5550 6500 5.4 6.1 6.9 V 0 0 0 ---- 1 15 10 µA Diagnostic Characteristics Current sense ratio10), static on-condition, VIS = 0...5 V, Vbb(on) = 6.511)...27V, Tj = -40°C, IL = 5 A: kILIS = IL / IIS kILIS Tj= -40°C, IL= 0.5 A: Tj= 25...+150°C, IL= 5 A: , Tj= 25...+150°C, IL = 0.5 A: Current sense output voltage limitation Tj = -40 ...+150°C IIS = 0, IL = 5 A: VIS(lim) Current sense leakage/offset current Tj = -40 ...+150°C VIN=0, VIS = 0, IL = 0: IIS(LL) VIN=5 V, VIS = 0, IL = 0: IIS(LH) VIN=5 V, VIS = 0, VOUT = 0 (short circuit): IIS(SH)12 ) 8) 9) 10) 11) 12) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 9). This range for the current sense ratio refers to all devices. The accuracy of the kILIS can be raised at least by a factor of two by matching the value of kILIS for every single device. In the case of current limitation the sense current IIS is zero and the diagnostic feedback potential VST is High. See figure 2b, page 11. Valid if Vbb(u rst) was exceeded before. not subject to production test, specified by design Data Sheet 5 V1.1, 2008-19-08 Smart High-Side Power Switch BTS640S2G BTS 640 S2 Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 12 V unless otherwise specified Current sense settling time to IIS static±10% after 5 A, positive input slope13) , IL = 0 Values min typ max Unit tson(IS) -- -- 300 µs Current sense settling time to 10% of IIS static after negative input slope13) , IL = 5 0A, tsoff(IS) -- 30 100 µs -- 10 -- µs 2 3 4 V 5 15 40 kΩ 3,0 4,5 7,0 kΩ -1.5 -- --0.5 3.5 --- V V V 1 -- 50 µA 20 50 90 µA td(ST OL3) -- 400 -- µs tdon(ST) -- 13 -- µs tdoff(ST) -- 1 -- µs 5.4 ---- 6.1 ---- 6.9 0.4 0.7 2 V Tj= -40...+150°C Tj= -40...+150°C Current sense rise time (60% to 90%) after change of load current13) , IL = 2.5 5A tslc(IS) Open load detection voltage14) (off-condition) VOUT(OL) Tj=-40..150°C: Internal output pull down RO (pin 6 to 2), VOUT=5 V, Tj=-40..150°C Input and Status Feedback15) Input resistance RI see circuit page 8 Input turn-on threshold voltage Tj =-40..+150°C: VIN(T+) Input turn-off threshold voltage Tj =-40..+150°C: VIN(T-) Input threshold hysteresis ∆ VIN(T) Off state input current (pin 3), VIN = 0.4 V Tj =-40..+150°C IIN(off) On state input current (pin 3), VIN = 5 V Tj =-40..+150°C IIN(on) Delay time for status with open load after Input neg. slope (see diagram page 13) Status delay after positive input slope13) Tj=-40 ... +150°C: Status delay after negative input slope13) Tj=-40 ... +150°C: Status output (open drain) Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA: VST(high) Tj =-40...+25°C, IST = +1.6 mA: VST(low) ST low voltage Tj = +150°C, IST = +1.6 mA: Status leakage current, VST = 5 V, Tj=25 ... +150°C: IST(high) µA 13) not subject to production test, specified by design External pull up resistor required for open load detection in off state. 15) If a ground resistor R GND is used, add the voltage drop across this resistor. 14) Data Sheet 6 V1.1, 2008-19-08 Smart High-Side Power Switch BTS640S2G Truth Table Normal operation Currentlimitation Short circuit to GND Overtemperature Short circuit to Vbb Open load Undervoltage Overvoltage Negative output voltage clamp L = "Low" Level H = "High" Level 16) 17) 18) 19) 20) Input Output Status Current Sense level level level IIS L H L H L H L H L H L H L H L H L L H L H L L16) L L H H H L H H H H H H L17) L H (L20)) L H L H L H 0 nominal 0 0 0 0 0 0 0 <nominal 18) 0 0 0 0 0 0 0 L19) H L L L L L X = don't care Z = high impedance, potential depends on external circuit Status signal after the time delay shown in the diagrams (see fig 5. page 12...13) The voltage drop over the power transistor is Vbb-VOUT>typ.3V. Under this condition the sense current IIS is zero An external short of output to Vbb, in the off state, causes an internal current from output to ground. If RGND is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious. Low ohmic short to Vbb may reduce the output current IL and therefore also the sense current IIS. Power Transistor off, high impedance with external resistor between pin 4 and pin 6&7 Data Sheet 7 V1.1, 2008-19-08 Smart High-Side Power Switch BTS640S2G Status output Terms 9 9 EE , ,1 , 67 9 ,1 , ,6 ,EE 921 9EE ,1 287 5 6721 ,/ 67 352)(7 67 287 ,6 967 9 ,6 *1' 5 *1' 9 (6' =' *1' 287 , *1' ESD-Zener diode: 6.1 V typ., max 5 mA; RST(ON) < 440 Ω at 1.6 mA, The use of ESD zener diodes as voltage clamp at DC conditions is not recommended. Input circuit (ESD protection) ,1 5 Current sense output , (6'=' , , 9 ,6 , ,6 , ,6 *1' (6'=' The use of ESD zener diodes as voltage clamp at DC conditions is not recommended. 5 ,6 *1' ESD-Zener diode: 6.1 V typ., max 14 mA; RIS = 1 kΩ nominal Inductive and overvoltage output clamp 9 EE 9 = 921 287 *1' 352)(7 VON clamped to 47 V typ. Data Sheet 8 V1.1, 2008-19-08 Smart High-Side Power Switch BTS640S2G Overvoltage protection of logic part GND disconnect 9 9 EE 5 67 9 5, ,1 9 EE = 67 /RJLF ,6 59 9 5 ,6 ,EE ,1 9EE 67 352)(7 287 287 ,6 *1' = 9 9 9 ,1 67 ,6 *1' 5 *1' 9 *1' Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) . 6LJQDO*1' Due to VGND >0, no VST = low signal available. VZ1 = 6.1 V typ., VZ2 = 47 V typ., RI= 4 kΩ typ, RGND= 150 Ω, RST= 15 kΩ, RIS= 1 kΩ, RV= 15 kΩ, GND disconnect with GND pull up Reverse battery protection 9 9EE 5 67 5, ,1 /RJLF 67 9EE 67 352)(7 287 287 ,6 *1' 9= ,6 ,1 287 9 EE 3RZHU ,QYHUVH 'LRGH 59 5 ,6 9 *1' Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. *1' 5/ 5*1' 3RZHU*1' 6LJQDO*1' 9 9679 ,1 ,6 Vbb disconnect with energized inductive load The load RL is inverse on, temperature protection is not active RGND= 150 Ω, RI= 4 kΩ typ, RST≥ 500 Ω, RIS≥ 200 Ω, RV≥ 500 Ω, KLJK Open-load detection 5 67 352)(7 287 287 ,6 *1' 9 EE EE (;7 9EE OFF-state diagnostic condition: VOUT > 3 V typ.; IN low 9 ,1 Normal load current can be handled by the PROFET itself. 2)) 2XW 67 /RJLF 5 9 287 2 6LJQDO*1' Data Sheet 9 V1.1, 2008-19-08 Smart High-Side Power Switch BTS640S2G Vbb disconnect with charged external inductive load KLJK 9EE ,1 287 67 352)(7 ' 287 ,6 *1' 5/ / 9 EE If other external inductive loads L are connected to the PROFET, additional elements like D are necessary. Inductive Load switch-off energy dissipation ( EE ( $6 9EE ,1 67 ,6 ( /RDG 9EE 287 352)(7 287 (/ *1' (5 Energy stored in load inductance: EL = 1/ ·L·I 2 2 L While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= VON(CL)·iL(t) dt, with an approximate solution for RL > 0 Ω: EAS= Data Sheet IL· L ·(Vbb + |VOUT(CL)|)· 2·RL OQ(1+ |V IL·RL OUT(CL)| ) 10 V1.1, 2008-19-08 Smart High-Side Power Switch BTS640S2G Figure 2a: Switching a lamp Timing diagrams ,1 Figure 1a: Switching a resistive load, change of load current in on-condition: 67 ,1 67 9 W don(ST) 9287 W on ,/ W off Wslc(IS) ,/ 287 W doff(ST) W slc(IS) , ,6 /RDG ,,6 W son(IS) W /RDG W soff(IS) W Figure 2b: Switching a lamp with current limit: ,1 The sense signal is not valid during settling time after turn or change of load current. 67 Figure 1b: Vbb turn on: ,1 9287 9EE ,/ , / ,,6 W , ,6 67 W t Data Sheet d ll diti 11 V1.1, 2008-19-08 Smart High-Side Power Switch BTS640S2G Figure 4a: Overtemperature: Reset if Tj <Tjt Figure 2c: Switching an inductive load: ,1 ,1 67 67 9287 ,/ ,/ , ,6 ,,6 7W W Figure 3a: Short circuit: shut down by overtempertature, reset by cooling Figure 5a: Open load: detection in ON-state, open load occurs in on-state ,1 ,/ ,1 ,/6&S , 67 /6&U 9287 , ,6 ,/ 67 RSHQ QRUPDO W ,,6 Heating up may require several milliseconds, depending on external conditions IL(SCp) = 50 A typ. increases with decreasing temperature. Data Sheet QRUPDO 12 W V1.1, 2008-19-08 Smart High-Side Power Switch BTS640S2G Figure 6b: Undervoltage restart of charge pump Figure 5b: Open load: detection in ON- and OFF-state (with REXT), turn on/off to open load 921&/ 9 RQ ,1 RQVWDWH RIIVWDWH 67 9 RIIVWDWH WG672/ EERYHU 9 287 9 9 EEXUVW 9 , / 9 RSHQORDG EERUVW EEXFS EEXQGHU 9 EE , ,6 W charge pump starts at Vbb(ucp) =4.7 V typ. Figure 7a: Overvoltage: Figure 6a: Undervoltage: ,1 ,1 67 QRWGHILQHG 67 9bb VON(CL) V bb(over) V bb(o rst) 9 EE V bb(under) , Vbb(u cp) 9bb(u rst) ,/ / , ,,6 Data Sheet ,6 W W 13 V1.1, 2008-19-08 Smart High-Side Power Switch BTS640S2G Figure 8b: Current sense ratio21: Figure 8a: Current sense versus load current: >P$@ N ,/,6 , ,6 ,/ >$@ , / >$@ Figure 9a: Output voltage drop versus load current: 921 >9@ 521 9211/ ,/ 21 Data Sheet 14 >$@ This range for the current sense ratio refers to all devices. The accuracy of the kILIS can be raised at least by a factor of two by matching the value of kILIS for every single device. V1.1, 2008-19-08 Smart High-Side Power Switch BTS640S2G Package Outlines 4.4 7.5 B 0.05 6.5 4.7 ±0.5 1±0.3 6.6 9.2 ±0.2 (14.9) 10.2 ±0.15 1.3 +0.1 -0.02 A 2.7 ±0.5 9.9 1) 0.1 17 0...0.15 7x 2.4 0.5 ±0.15 0.6 +0.1 -0.03 6 x 1.27 8° M AX. 0.25 M AB 0.1 B 1) Shear and punch direction no burrs this surface Back side, heatsink contour All metal sufaces tin plated, except area of cut . Figure 1 PG-TO-263-7-2 (Plastic Dual Small Outline Package) (RoHS-compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pbfree finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). Please specify the package needed (e.g. green package) when placing an order You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. Data Sheet 15 Dimensions in mm V1.1, 2008-19-08 Smart High-Side Power Switch BTS640S2G Revision History Version V1.1 Data Sheet Date Changes 2008-19-08 Creation of the green datasheet. First page : Adding the green logo and the AEC qualified Adding the bullet AEC qualified and the RoHS compliant features Package page Modification of the package to be green. 16 V1.1, 2008-19-08 Edition 2008-19-08 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 8/19/08. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. 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