IRF 16TTS08

Bulletin I2115 rev. D 12/98
SAFEIR Series
16TTS..
PHASE CONTROL SCR
VT
< 1.4V @ 10A
ITSM = 200A
Description/Features
The 16TTS.. SAFEIR series of silicon controlled
rectifiers are specifically designed for medium
power switching and phase control applications.
The glass passivation technology used has reliable operation up to 125° C junction temperature.
VRRM = 800 to 1600V
Typical applications are in input rectification (soft
start) and these products are designed to be used
with International Rectifier input diodes, switches
and output rectifiers which are available in identical
package outlines.
Output Current in Typical Applications
Applications
Single-phase Bridge
Capacitive input filter TA = 55°C, TJ = 125°C,
Three-phase Bridge Units
13.5
17
A
common heatsink of 1°C/W
Major Ratings and Characteristics
Characteristics
IT(AV)
Sinusoidal
Package Outline
16TTS..
Units
10
A
16
A
up to 1600
V
200
A
1.4
V
500
V/µs
150
A/µs
- 40 to 125
°C
waveform
IRMS
VRRM/VDRM
ITSM
VT
@ 10 A, TJ = 25°C
dv/dt
di/dt
TJ
range
TO-220AC
Also available in SMD-220 package (series 16TTS..S)
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1
16TTS.. SAFEIR Series
Bulletin I2115 rev. D 12/98
Voltage Ratings
VRRM, maximum
VDRM , maximum
IRRM/IDRM
peak reverse voltage
peak direct voltage
125°C
V
V
mA
16TTS08
800
800
10
16TTS12
1200
1200
16TTS16
1600
1600
Part Number
Absolute Maximum Ratings
Parameters
16TTS..
10
IRMS
Max. RMS On-state Current
16
ITSM
Max.Peak One Cycle Non-Repetitive
170
Surge Current
200
I2 t
Max. I2 t for fusing
144
A
I √t
Max. I √t for fusing
VTM
Max. On-state Voltage Drop
1.4
V
rt
On-state slope resistance
24.0
mΩ
VT(TO) Threshold Voltage
1.1
V
IRM/IDM Max.Reverse and Direct
0.5
mA
Leakage Current
10
IH
IL
2
Holding Current
10ms Sine pulse, no voltage reapplied
A2 s
10ms Sine pulse, rated VRRMapplied
10ms Sine pulse, no voltage reapplied
2000
A √s
2
t = 0.1 to 10ms, no voltage reapplied
@ 10A, TJ = 25°C
TJ = 125°C
TJ = 25 °C
TJ = 125 °C
Typ.
Max.
--
100
100
150
VR = rated VRRM/ VDRM
Anode Supply = 6V, Resistive load, Initial IT =1A
mA
16TTS08, 16TTS12
16TTS16
200
mA
dv/dt Max. Rate of Rise of off-state Voltage
500
V/µs
di/dt Max. Rate of Rise of turned-on Current
150
A/µs
2
Max. Latching Current
@ TC = 98° C, 180° conduction half sine wave
10ms Sine pulse, rated VRRMapplied
200
2
Conditions
Units
IT(AV) Max. Average On-state Current
Anode Supply = 6V, Resistive load
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16TTS.. SAFEIR Series
Bulletin I2115 rev. D 12/98
Triggering
Parameters
PGM
16TTS..
Units
8.0
W
Max. peak Gate Power
PG(AV) Max. average Gate Power
2.0
+ IGM Max. paek positive Gate Current
1.5
A
- VGM Max. paek negative Gate Voltage
10
V
IGT
90
mA
Max. required DC Gate Current
to trigger
VGT
Max. required DC Gate Voltage
Anode supply = 6V, resistive load, TJ = - 65°C
60
Anode supply = 6V, resistive load, TJ = 25°C
35
Anode supply = 6V, resistive load, TJ = 125°C
3.0
to trigger
Conditions
V
Anode supply = 6V, resistive load, TJ = - 65°C
2.0
Anode supply = 6V, resistive load, TJ = 25°C
1.0
Anode supply = 6V, resistive load, TJ = 125°C
VGD
Max. DC Gate Voltage not to trigger
0.2
IGD
Max. DC Gate Current not to trigger
2.0
mA
TJ = 125°C, VDRM = rated value
16TTS..
Units
0.9
µs
TJ = 125°C, VDRM = rated value
Switching
Parameters
tgt
Typical turn-on time
trr
Typical reverse recovery time
tq
Typical turn-off time
4
Conditions
TJ = 25°C
TJ = 125°C
110
Thermal-Mechanical Specifications
Parameters
16TTS..
Units
°C
TJ
Max. Junction Temperature Range
- 40 to 125
T stg
Max. Storage Temperature Range
- 40 to 125
RthJC Max. Thermal Resistance Junction
1.3
to Case
RthJA Max. Thermal Resistance Junction
62
°C/W
Conditions
DCoperation
to Ambient
RthCS Typ. Thermal Resistance Case
to Heatsink
wt
Approximate Weight
T
Mounting Torque
Case Style
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0.5
Mountingsurface,smoothandgreased
2 (0.07)
g (oz.)
Min.
6 (5)
Max.
12 (10)
Kg-cm
(Ibf-in)
TO-220AC
3
16TTS.. SAFEIR Series
125
16TTS.. Series
R thJC (DC) = 1.3 °C/W
120
115
Conduction Angle
110
105
100
30°
60°
95
90°
120°
180°
90
0
2
4
6
8
10
12
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
Bulletin I2115 rev. D 12/98
125
16TTS.. Series
R thJC(DC) = 1.3 °C/W
120
115
Conduction Period
110
105
100
30°
90°
120°
0
2
RMS Limit
8
Conduction Angle
6
16TTS.. Series
T J = 125°C
4
2
0
0
1
2
3
4
5
6
7
8
9
10 11
Max imum Average On-state Power Loss (W)
Maximum Average On-state Power Loss (W)
180°
120°
90°
60°
30°
10
120
100
16TTS..Series
80
10
100
Number Of Equal Amplitude Half C ycle Current Pulses (N)
Fig. 6 - Maximum Non-Repetitive Surge Current
4
12
14
16
DC
180°
120°
90°
60°
30°
20
15
RMS Limit
10
Conduction Period
5
16TTS.. Series
T J = 125°C
0
0
2
4
6
8
10
12
14
16
18
Fig. 4 - On-state Power Loss Characteristics
Peak Half Sine Wave Forward Current (A)
Peak Half Sine Wave On-state Current (A)
140
1
10
Average On-state Current (A)
At Any Rated Load Condition And With
Rated V RRMApplied Following Surge.
Initial T J = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
160
8
25
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
180
6
Fig. 2 - Current Rating Characteristics
18
12
4
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
14
180° DC
90
Average On-state Current (A)
16
60°
95
200
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial T J = 125°C
No Voltage Reapplied
Rated VRRM Reapplied
180
160
140
120
100
16TTS.. Series
80
0.01
0.1
1
Pulse Train Duration (s)
Fig. 7 - Maximum Non-Repetitive Surge Current
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16TTS.. SAFEIR Series
Bulletin I2115 rev. D 12/98
Instantaneous On-state Current (A)
1000
16TTS.. Series
100
10
T = 25°C
J
T J= 125°C
1
0
1
2
3
4
5
Instantaneous On-st ate Voltage (V)
Transient Thermal Impedance Z thJC (°C/W)
Fig. 7 - On-state Voltage Drop Characteristics
10
Steady State Value
(DC Operation)
1
D=
D=
D=
D=
D=
0.50
0.33
0.25
0.17
0.08
0.1
Single Pulse
16TTS.. Series
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
Rectangular gate pulse
a)Recommended load line for
rated di/dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30% rated di/dt: 10 V, 65 ohms
10
tr = 1 µs, tp >= 6 µs
(1) PGM = 40 , tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
(a)
(b)
VGD
IGD
0.1
0.001
TJ = -10 °C
TJ = 125 °C
1
TJ = 25 °C
Instantaneous Gate Voltage (V)
100
(4)
16TTS.. Series
0.01
0.1
(3)
(2)
(1)
Frequency Limited by PG(AV)
1
10
100
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
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16TTS.. SAFEIR Series
Bulletin I2115 rev. D 12/98
Outline Table
10.54 (0.41)
2
1.32 (0.05)
MAX.
3.78 (0.15)
1.22 (0.05)
DIA.
3.54 (0.14)
6.48 (0.25)
6.23 (0.24)
2.92 (0.11)
15.24 (0.60)
2.54 (0.10)
TERM 2
14.84 (0.58)
2°
1 2 3
14.09 (0.55)
3.96 (0.16)
13.47 (0.53)
3.55 (0.14)
0.10 (0.004)
2.04 (0.080) MAX.
2.89 (0.11)
1.40 (0.05)
1.15 (0.04)
2.84 (0.10)
0.94 (0.04)
0.69 (0.03)
1 2 3
0.61 (0.02) MAX.
4.57 (0.18)
4.32 (0.17)
Dimensions in millimeters (and inches)
5.08 (0.20) REF.
Ordering Information Table
Device Code
16
T
T
S
16
1
2
3
4
5
2
(A)
1
-
Current Rating
2
-
Circuit Configuration:
3
-
Package:
4
-
Type of Silicon:
S = Converter Grade
08 = 800V
5
-
Voltage code: Code x 100 = VRRM
12 = 1200V
1 (K) (G) 3
T = Single Thyristor
T = TO-220AC
16 = 1600V
6
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16TTS.. SAFEIR Series
Bulletin I2115 rev. D 12/98
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Data and specifications subject to change without notice.
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