Bulletin I2199 rev. A 09/05
SAFEIR Series
25TTS12PbF
PHASE CONTROL SCR
Lead-Free ("PbF" suffix)
VT
< 1.25V @ 16A
ITSM = 300A
Description/Features
The 25TTS.. SAFEIR series of silicon controlled
rectifiers are specifically designed for medium
power switching and phase control applications.
The glass passivation technology used has reliable operation up to 125°C junction temperature.
VRRM = 1200V
Typical applications are in input rectification (soft
start) and these products are designed to be used
with International Rectifier input diodes, switches
and output rectifiers which are available in identical
package outlines.
Output Current in Typical Applications
Applications
Single-phase Bridge
Three-phase Bridge
Units
18
22
A
Capacitive input filter TA = 55°C, TJ = 125°C,
common heatsink of 1°C/W
Major Ratings and Characteristics
Characteristics
Package Outline
Values
Units
16
A
25
A
VRRM/ VDRM
1200
V
ITSM
300
A
IT(AV)
Sinusoidal
waveform
IRMS
VT
1.25
V
dv/dt
500
V/µs
di/dt
150
A/µs
- 40 to 125
°C
T
@ 16 A, TJ = 25°C
J
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TO-220
1
25TTS12PbF SAFEIR Series
Bulletin I2199 rev. A 09/05
Voltage Ratings
VRRM, maximum
VDRM , maximum
IRRM/IDRM
Part Number
peak reverse voltage
V
peak direct voltage
V
125°C
mA
25TTS12PbF
1200
1200
10
Absolute Maximum Ratings
Parameters
Values
Units
A
IT(AV) Max. Average On-state Current
16
IRMS
Max. RMS On-state Current
25
ITSM
Max. Peak One Cycle Non-Repetitive
300
Surge Current
350
2
I t
2
Max. I t for fusing
450
10ms Sine pulse, no voltage reapplied
2
A s
Max. I2√t for fusing
6300
A2√s
VTM
Max. On-state Voltage Drop
1.25
V
rt
On-state slope resistance
12.0
mΩ
VT(TO) Threshold Voltage
1.0
V
IRM/IDM Max.Reverse and Direct
0.5
mA
Leakage Current
10
Holding Current
Typ. Max.
IL
100
@ 16A, TJ = 25°C
TJ = 125°C
TJ = 25 °C
VR = rated VRRM/ VDRM
Anode Supply = 6V, Resistive load, Initial IT=1A
mA
200
mA
dv/dt Max. Rate of Rise of off-state Volt.
500
V/µs
di/dt
150
A/µs
2
t = 0.1 to 10ms, no voltage reapplied
TJ = 125 °C
Max. Latching Current
Max. Rate of Rise of turned-on Curr.
10ms Sine pulse, rated VRRM applied
10ms Sine pulse, no voltage reapplied
I2√t
--
@ TC = 93° C, 180° conduction half sine wave
10ms Sine pulse, rated VRRM applied
630
IH
Conditions
Anode Supply = 6V, Resistive load
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25TTS12PbF SAFEIR Series
Bulletin I2199 rev. A 09/05
Triggering
Parameters
PGM
Max. peak Gate Power
Values
Units
8.0
W
Conditions
PG(AV) Max. average Gate Power
2.0
+ IGM Max. paek positive Gate Current
1.5
A
- VGM Max. paek negative Gate Voltage
10
V
IGT
Max. required DC Gate Current
60
mA
to trigger
45
Anode supply = 6V, resistive load, TJ = 25°C
20
Anode supply = 6V, resistive load, TJ = 125°C
VGT
V
Anode supply = 6V, resistive load, TJ = - 10°C
Max. required DC Gate Voltage
2.5
to trigger
2.0
Anode supply = 6V, resistive load, TJ = 25°C
1.0
Anode supply = 6V, resistive load, TJ = 125°C
VGD
Max. DC Gate Voltage not to trigger
0.25
IGD
Max. DC Gate Current not to trigger
2.0
mA
Values
Units
0.9
µs
Anode supply = 6V, resistive load, TJ = - 10°C
TJ = 125°C, VDRM = rated value
TJ = 125°C, VDRM = rated value
Switching
Parameters
tgt
Typical turn-on time
trr
Typical reverse recovery time
tq
Typical turn-off time
4
Conditions
TJ = 25°C
TJ = 125°C
110
Thermal-Mechanical Specifications
Parameters
Values
Units
°C
TJ
Max. Junction Temperature Range
- 40 to 125
Tstg
Max. Storage Temperature Range
- 40 to 125
RthJC Max. Thermal Resistance Junction
1.1
to Case
Max. Thermal Resistance Junction
62
RthJA
°C/W
Conditions
DC operation
to Ambient
RthCS Typ. Thermal Resistance Case
to Heatsink
wt
Approximate Weight
T
Mounting Torque
Case Style
Marking Device
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0.5
Mounting surface, smooth and greased
2 (0.07)
g (oz.)
Min.
6 (5)
Max.
12 (10)
Kg-cm
(Ibf-in)
TO-220
25TTS12
3
25TTS12PbF SAFEIR Series
130
Maximum Allowable Case Tempe rature (°C)
Maximum Allowab le Case Temperature (°C)
Bulletin I2199 rev. A 09/05
25TTS.. Series
R thJC (DC) = 1.1 °C/ W
120
Conduc tion Angle
110
30°
60°
100
90°
120°
180°
90
0
5
10
15
20
130
25TTS.. Series
R thJC (DC) = 1.1 °C/ W
120
110
Conduc tion Period
100
90
60°
30°
80
0
5
Average On-state Current (A)
Maximum Average On-state Power Loss (W)
Maximum Average On-sta te Power Loss (W)
180°
120°
90°
60°
30°
RMSLimit
10
Conduc tion Angle
25TTS.. Series
TJ= 125°C
5
0
0
4
8
12
16
25
200
25TTS.. Series
150
100
Number Of Equal Amplitude Half Cyc le Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
4
30
20
RMSLimit
15
Conduction Period
10
25TTS.. Series
T J = 125°C
5
0
0
5
10
15
20
25
30
Fig. 4 - On-state Power Loss Characteristics
400
Peak Half Sine Wa ve On-sta te Current (A)
Pea k Half Sine Wave On-sta te Current (A)
250
10
25
Avera ge On-sta te Current (A)
At Any Rated Load Condition And With
Rated V RRM Applied Following Surge.
Initia l TJ = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1
20
DC
180°
120°
90°
60°
30°
30
20
Fig. 3 - On-state Power Loss Characteristics
300
15
35
Average On-state Current (A)
350
10
DC
Fig. 2 - Current Rating Characteristics
25
15
180°
Avera ge On-sta te Current (A)
Fig. 1 - Current Rating Characteristics
20
90°
120°
350
300
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Cond uc tion Ma y Not Be Ma inta ined.
Initia l TJ = 125°C
No Voltage Rea pp lied
Rated VRRM Reapp lied
250
200
150
100
0.01
25TTS.. Series
0.1
1
Pulse Tra in Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
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25TTS12PbF SAFEIR Series
Bulletin I2199 rev. A 09/05
Insta ntaneous On-state Current (A)
1000
100
TJ= 25°C
TJ= 125°C
10
25TTS.. Series
1
0
1
2
3
4
5
Instantaneous On-state Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics
Rec tangular gate pulse
a)Recommended load line for
rated di/ dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30% rated d i/ dt: 10 V, 65 ohms
10
tr = 1 µs, tp >= 6 µs
(1) PGM = 40 W, tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
(b )
VGD
IGD
0.1
0.001
(a )
TJ = -10 °C
TJ = 125 °C
1
TJ = 25 °C
Instantaneous Gate Voltage (V)
100
(4)
0.1
(2)
(1)
Frequenc y Limited by PG(AV)
25TTS.. Series
0.01
(3)
1
10
100
Instantaneous Ga te Current (A)
Tra nsient Thermal Imp ed ance Z thJC (°C/W)
Fig. 8 - Gate Characteristics
10
Steady State Value
(DC Opera tion)
1
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single Pulse
25TTS.. Series
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 9 - Thermal Impedance ZthJC Characteristics
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5
25TTS12PbF SAFEIR Series
Bulletin I2199 rev. A 09/05
Outline Table
10.54 (0.41)
MAX.
3.78 (0.15)
3.54 (0.14)
1.32 (0.05)
2.92 (0.11)
2.54 (0.10)
TERM 2
15.24 (0.60)
14.84 (0.58)
1.22 (0.05)
DIA.
6.48 (0.25)
6.23 (0.24)
1 2 3
14.09 (0.55)
3.96 (0.16)
13.47 (0.53)
3.55 (0.14)
2°
0.10 (0.004)
2.04 (0.080) MAX.
1.40 (0.05)
2.89 (0.11)
1.15 (0.04)
2.64 (0.10)
0.94 (0.04)
0.69 (0.03)
1 2 3
0.61 (0.02) MAX.
4.57 (0.18)
4.32 (0.17)
5.08 (0.20) REF.
Conform to JEDEC outline TO-220AB
Dimensions in millimeters and (inches)
Part Marking Information
IRMX Assembly Line
EXAMPLE: THIS IS A 25TTS12
LOT CODE 1789
ASSEMBLED ON WW 19, 2001
6
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
PART NUMBER
DATE CODE
YEAR 1 = 2001
WEEK 19
P = LEAD-FREE
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25TTS12PbF SAFEIR Series
Bulletin I2199 rev. A 09/05
Ordering Information Table
Device Code
25
T
T
S
12
PbF
1
2
3
4
5
6
1
-
Current Rating (25 = 25A)
2
-
Circuit Configuration
2
(A)
1 (K) (G) 3
T = Single Thyristor
3
-
Package
4
-
Type of Silicon
5
-
Voltage Rating (12 = 1200V)
6
-
y none = Standard Production
T = TO-220AC
S = Standard Recovery Rectifier
y PbF = Lead-Free
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level and Lead-Free.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 09/05
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7