IRF IRLR3802PBF

PD - 95089A
IRLR3802PbF
IRLU3802PbF
Applications
l High Frequency 3.3V and 5V input Pointof-Load Synchronous Buck Converters
l Power Management for Netcom,
Computing and Portable Applications.
l Lead-Free
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on)
l Fully Characterized Avalanche Voltage
and Current
HEXFET® Power MOSFET
VDSS
RDS(on) max
Qg
8.5mΩ
27nC
12V
D-Pak
IRLR3802
I-Pak
IRLU3802
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
Units
12
± 12
84 „
60„
320
88
44
0.59
-55 to + 175
V
V
A
W
W
mW/°C
°C
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
–––
1.7
40
110
°C/W
Notes  through „ are on page 9
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1
12/7/04
IRLR/U3802PbF
Static @ TJ = 25°C (unless otherwise specified)
BVDSS
∆ΒVDSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
∆VGS(th)/∆TJ
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
IDSS
Drain-to-Source Leakage Current
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-Source Charge
Post-Vth Gate-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
12
–––
–––
–––
0.6
–––
–––
–––
–––
–––
31
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.009
6.5
–––
–––
-3.2
–––
–––
–––
–––
–––
27
3.6
2.0
10
11
12
28
11
14
21
17
2490
2150
530
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, I D = 1mA ƒ
8.5
VGS = 4.5V, ID = 15A ƒ
mΩ
30
VGS = 2.8V, ID = 12A
1.9
V
VDS = VGS, ID = 250µA
––– mV/°C
100
VDS = 9.6V, VGS = 0V
µA
250
VDS = 9.6V, VGS = 0V, TJ = 125°C
200
VGS = 12V
nA
-200
VGS = -12V
–––
S
VDS = 6.0V, ID = 12A
41
–––
VDS = 6.0V
–––
VGS = 5.0V
–––
nC ID = 6.0A
–––
See Fig.16
–––
–––
nC
VDS = 10V, VGS = 0V
–––
VDD = 6.0V, VGS = 4.5Vƒ
–––
ns
ID = 12A
–––
Clamped Inductive Load
–––
–––
VGS = 0V
–––
pF
VDS = 6.0V
–––
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche Energy‚
Avalanche Current
Typ.
Max.
Units
–––
–––
300
20
mJ
A
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
VSD
Diode Forward Voltage
trr
Qrr
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
2
Min. Typ. Max. Units
–––
–––
84„
–––
–––
320
–––
–––
–––
–––
–––
–––
0.81
0.65
52
54
50
50
1.2
–––
78
81
75
75
A
V
ns
nC
ns
nC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
TJ = 25°C, IS = 12A, VGS = 0V ƒ
TJ = 125°C, IS = 12A, VGS = 0V ƒ
TJ = 25°C, IF = 12A, VR=20V
di/dt = 100A/µs ƒ
TJ = 125°C, IF = 12A, VR=20V
di/dt = 100A/µs ƒ
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IRLR/U3802PbF
1000
1000
VGS
10V
4.5V
3.5V
2.5V
2.3V
2.0V
1.8V
BOTTOM 1.5V
100
10
1
1.5V
0.1
20µs PULSE WIDTH
Tj = 25°C
0.01
0.1
1
100
10
1.5V
1
0.1
T J = 25°C
T J = 175°C
10
1
VDS = 5.0V
20µs PULSE WIDTH
3.0
4.0
5.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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6.0
ID = 84A
VGS = 4.5V
(Normalized)
RDS(on) , Drain-to-Source On Resistance
ID, Drain-to-Source Current (Α)
1.5
2.0
10
Fig 2. Typical Output Characteristics
1000
0
1
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
20µs PULSE WIDTH
Tj = 175°C
0.1
10
VDS, Drain-to-Source Voltage (V)
1.0
VGS
10V
4.5V
3.5V
2.5V
2.3V
2.0V
1.8V
BOTTOM 1.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
1.0
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRLR/U3802PbF
100000
ID= 6.0A
VGS , Gate-to-Source Voltage (V)
Coss
C, Capacitance (pF)
12
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
= Cds + Cgd
10000
Ciss
Coss
1000
Crss
8
6
4
2
0
100
1
10
0
100
10
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000.0
100.0
10.0
T J = 25°C
OPERATION IN THIS AREA
LIMITED BY RDS (on)
1.5
2.0
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
2.5
100µsec
10
1
0.1
1.0
50
1msec
VGS = 0V
0.5
40
100
T J = 175°C
0.0
30
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1.0
20
Q G Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
4
VDS = 12V
10
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
0
1
10
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRLR/U3802PbF
LD
VDS
100
LIMITED BY PACKAGE
VDD
ID , Drain Current (A)
80
D.U.T
VGS
60
Pulse Width < 1µs
Duty Factor < 0.1%
40
Fig 10a. Switching Time Test Circuit
20
VDS
90%
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tf
td(off)
tr
Fig 10b. Switching Time Waveforms
Thermal Response ( Z thJC )
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRLR/U3802PbF
D.U.T
RG
VGS
20V
DRIVER
L
VDS
+
V
- DD
IAS
A
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
EAS, Single Pulse Avalanche Energy (mJ)
5000
15V
TOP
BOTTOM
4000
ID
8.0A
14A
20A
3000
2000
1000
0
tp
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
VGS(th) Gate threshold Voltage (V)
1.4
50KΩ
1.2
12V
.2µF
.3µF
ID = 250µA
1.0
D.U.T.
0.8
+
V
- DS
VGS
3mA
0.6
IG
0.4
ID
Current Sampling Resistors
Fig 14. Gate Charge Test Circuit
0.2
-75
-50
-25
0
25
50
75
100 125 150 175
T J , Temperature ( °C )
Fig 13. Threshold Voltage Vs. Temperature
6
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IRLR/U3802PbF
D.U.T
Driver Gate Drive
ƒ
+
‚
„
•
•
•
•
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
V DD
P.W.
Period
*

RG
D=
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
Period
P.W.
+
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 16. Gate Charge Waveform
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7
IRLR/U3802PbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: T HIS IS AN IRFR120
WIT H ASS EMBLY
LOT CODE 1234
ASS EMBLED ON WW 16, 1999
IN T HE AS S EMBLY LINE "A"
PART NUMBER
INT ERNAT IONAL
RECT IFIER
LOGO
Note: "P" in as sembly line pos ition
indicates "Lead-Free"
IRFU120
12
916A
34
AS S EMBLY
LOT CODE
DAT E CODE
YEAR 9 = 1999
WEEK 16
LINE A
OR
INT ERNAT IONAL
RECT IFIER
LOGO
PART NUMBER
IRFU120
12
AS S EMBLY
LOT CODE
8
34
DAT E CODE
P = DES IGNATES LEAD-FREE
PRODUCT (OPT IONAL)
YEAR 9 = 1999
WEEK 16
A = AS S EMBLY S IT E CODE
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IRLR/U3802PbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
EXAMPLE: T HIS IS AN IRFU120
WIT H AS S EMBLY
LOT CODE 5678
AS S EMBLED ON WW 19, 1999
IN T HE AS S EMBLY LINE "A"
INT ERNAT IONAL
RECT IFIER
LOGO
PART NUMBER
IRF U120
919A
56
78
AS S EMBLY
LOT CODE
Note: "P" in assembly line
position indicates "Lead-Free"
DAT E CODE
YEAR 9 = 1999
WEEK 19
LINE A
OR
INT ERNAT IONAL
RECT IFIER
LOGO
PART NUMBER
IRFU120
56
AS S EMBLY
LOT CODE
www.irf.com
78
DAT E CODE
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
YEAR 9 = 1999
WEEK 19
A = AS S EMBLY S IT E CODE
9
IRLR/U3802PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Notes:
 Repetitive rating; pulse width limited by
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ Calculated continuous current based on maximum allowable
‚ Starting TJ = 25°C, L = 1.4mH
junction temperature. Package limitation current is 30A.
max. junction temperature.
RG = 25Ω, IAS = 20A.
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrialmarket.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/04
10
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