IRF IRFR3704PBF

PD - 95034A
IRFR3704PbF
IRFU3704PbF
SMPS MOSFET
Applications
l High Frequency DC-DC Isolated
Converters with Synchronous Rectification
for Telecom and Industrial use
HEXFET® Power MOSFET
VDSS
RDS(on) max
ID
20V
9.5mΩ
75A
High Frequency Buck Converters for
Computer Processor Power
l 100% RG Tested
l Lead-Free
Benefits
l Ultra-Low RDS(on)
l
l
Very Low Gate Impedance
l
Fully Characterized Avalanche Voltage
and Current
D-Pak
IRFR3704
I-Pak
IRFU3704
Absolute Maximum Ratings
Symbol
Max
Parameter
VDS
Drain-Source Voltage
VGS
ID @ TC = 25°C
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
± 20
75
ID @ TC = 70°C
63
IDM
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Units
20
c
Maximum Power Dissipation
Maximum Power Dissipation
TJ, TSTG
Linear Derating Factor
Junction and Storage Temperature Range
f
f
A
300
e
e
PD @TC = 25°C
PD @TA = 70°C
V
90
W
62
0.58
-55 to +175
W/°C
°C
Thermal Resistance
Symbol
Parameter
g
RθJC
Junction-to-Case
RθJA
Junction-to-Ambient (PCB Mount) *
RθJA
Junction-to-Ambient
g
g
Typ
Max
–––
1.7
–––
50
–––
110
Units
°C/W
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Notes 
through … are on page 9
www.irf.com
1
12/13/04
IRFR/U3704PbF
Static @ TJ = 25°C (unless otherwise specified)
Min
Typ
Max Units
V (BR)DSS
∆V(BR)DSS/∆TJ
Symbol
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
20
–––
–––
0.021
–––
–––
V V GS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
7.3
11
9.5
14
mΩ
V GS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
1.0
–––
–––
–––
3.0
10
Gate-to-Source Forward Leakage
–––
–––
–––
–––
100
200
Gate-to-Source Reverse Leakage
–––
–––
-200
IGSS
Parameter
V
µA
nA
Conditions
e
e
V GS = 10V, ID = 15A
V GS = 4.5V, ID = 12A
V DS = VGS, ID = 250µA
V DS = 20V, VGS = 0V
V DS = 16V, VGS = 0V, TJ = 125°C
V GS = 16V
V GS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min
Typ
Max Units
gfs
Qg
Symbol
Forward Transconductance
Total Gate Charge
42
–––
–––
19
–––
–––
S
V DS = 25V, ID = 57A
ID = 28.4A
Qgs
Qgd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
–––
–––
8.1
6.4
–––
–––
nC
QOSS
RG
Output Gate Charge
Gate Resistance
–––
0.3
16
–––
24
3.2
V DS = 10V
V GS = 4.5V
V GS = 0V, VDS = 10V
td(on)
tr
Turn-On Delay Time
Rise Time
–––
–––
8.4
98
–––
–––
td(off)
Turn-Off Delay Time
Fall Time
–––
–––
12
5.0
–––
–––
Input Capacitance
Output Capacitance
–––
–––
1996
1085
–––
–––
Reverse Transfer Capacitance
–––
155
–––
tf
Ciss
Coss
Crss
Conditions
e
Ω
V DD = 10V
ID = 28.4A
ns
pF
RG = 1.8Ω
V GS = 4.5V
e
V GS = 0V
V DS = 10V
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
E AS
IAR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
c
d
Typ
Max
Units
–––
–––
216
71
mJ
A
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
trr
Qrr
trr
Qrr
2
–––
Typ
–––
Max Units
75
f
Conditions
MOSFET symbol
A
showing the
integral reverse
–––
–––
300
Diode Forward Voltage
–––
–––
0.88
0.82
1.3
–––
V
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
38
45
57
68
ns
nC
TJ = 25°C, IF = 35.5A, V R = 20V
di/dt = 100A/µs
Reverse Recovery Time
–––
41
62
ns
Reverse Recovery Charge
–––
50
75
nC
TJ = 125°C, IF = 35.5A, VR= 20V
di/dt = 100A/µs
(Body Diode)
V SD
c
Min
p-n junction diode.
TJ = 25°C, IS = 35.5A, VGS = 0V
TJ = 125°C, IS = 35.5A, VGS = 0V
e
e
e
e
www.irf.com
IRFR/U3704PbF
1000
VGS
TOP
10.0V
9.0V
8.0V
7.0V
6.0V
5.0V
4.5V
BOTTOM 3.5V
100
3.5V
10
VGS
10.0V
9.00V
8.0V
7.0V
6.0V
5.0V
4.5V
BOTTOM 3.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
1000
100
3.5V
10
20µs PULSE WIDTH
Tj = 175°C
20µs PULSE WIDTH
Tj = 25°C
1
1
0.1
1
10
100
0.1
1
VDS, Drain-to-Source Voltage (V)
10
1000
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2. Typical Output Characteristics
I D , Drain-to-Source Current (A)
Fig 1. Typical Output Characteristics
TJ = 25 ° C
TJ = 175 ° C
100
10
3.0
V DS = 15V
20µs PULSE WIDTH
4.0
5.0
6.0
7.0
8.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
100
VDS, Drain-to-Source Voltage (V)
ID = 75A
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFR/U3704PbF
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
2000
1500
Coss
1000
500
ID = 28.4A
VDS = 10V
8
6
4
2
Crss
0
1
10
0
100
0
10
VDS , Drain-to-Source Voltage (V)
30
40
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10us
I D , Drain Current (A)
100
TJ = 175 ° C
100
10
TJ = 25 ° C
100us
1ms
10
10ms
1
0.1
0.2
V GS = 0 V
0.5
0.8
1.1
1.4
1.7
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
20
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
ISD , Reverse Drain Current (A)
C, Capacitance (pF)
2500
10
VGS , Gate-to-Source Voltage (V)
3000
2.0
TC = 25 ° C
TJ = 175° C
Single Pulse
1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com
IRFR/U3704PbF
LIMITED BY PACKAGE
ID , Drain Current (A)
RD
VDS
80
VGS
D.U.T.
RG
60
+
-VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
40
Fig 10a. Switching Time Test Circuit
20
VDS
90%
0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
175
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1 D = 0.50
0.20
0.10
PDM
0.05
0.1
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
0.020
RDS(on) , Drain-to -Source On Resistance ( Ω)
RDS ( on ) , Drain-to-Source On Resistance ( Ω )
IRFR/U3704PbF
VGS = 4.5V
0.015
0.010
VGS = 10V
0.005
0
50
100
150
200
250
0.010
0.009
0.008
ID = 35.5A
0.007
0.006
300
4.0
ID , Drain Current ( A )
5.0
6.0
7.0
8.0
9.0
10.0
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
VGS
.2µF
QGS
.3µF
D.U.T.
+
V
- DS
QGD
600
EAS , Single Pulse Avalanche Energy (mJ)
50KΩ
12V
VG
VGS
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveforms
15V
V(BR)DSS
tp
L
VDS
D.U.T
RG
IAS
20V
tp
I AS
DRIVER
+
- VDD
0.01Ω
Fig 15a&b. Unclamped Inductive Test Circuit
and Waveforms
6
A
ID
11.6A
23.8A
BOTTOM 28.4A
TOP
500
400
300
200
100
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature ( °C)
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
www.irf.com
IRFR/U3704PbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: THIS IS AN IRFR120
WITH ASSEMBLY
LOT CODE 1234
AS SEMBLED ON WW 16, 1999
IN T HE ASSEMBLY LINE "A"
PART NUMBER
INTERNATIONAL
RECT IFIER
LOGO
Note: "P" in as sembly line position
indicates "Lead-Free"
IRFU120
12
916A
34
ASSEMBLY
LOT CODE
DATE CODE
YEAR 9 = 1999
WEEK 16
LINE A
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
12
ASSEMBLY
LOT CODE
www.irf.com
34
DATE CODE
P = DESIGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
YEAR 9 = 1999
WEEK 16
A = ASS EMBLY SITE CODE
7
IRFR/U3704PbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
EXAMPLE: T HIS IS AN IRF U120
WITH ASS EMBLY
LOT CODE 5678
AS SEMB LED ON WW 19, 1999
IN THE AS SEMBLY LINE "A"
INT ERNAT IONAL
RECT IFIER
LOGO
PART NUMBER
IRFU120
919A
56
78
ASS EMBLY
LOT CODE
Note: "P" in assembly line
position indicates "Lead-Free"
DATE CODE
YEAR 9 = 1999
WEEK 19
LINE A
OR
INT ERNAT IONAL
RECT IFIER
LOGO
PART NUMBER
IRF U120
56
AS SEMBLY
LOT CODE
8
78
DAT E CODE
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
YEAR 9 = 1999
WEEK 19
A = ASS EMB LY SIT E CODE
www.irf.com
IRFR/U3704PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
TRL
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 0.5 mH
RG = 25Ω, IAS = 28.4 A.
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
„ Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A
… Rθ is measured at TJ approximately 90°C
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 12/04
www.irf.com
9