PD- 95073A
IRFR3711PbF
IRFU3711PbF
SMPS MOSFET
Applications
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Server Processor Power Synchronous FET
l Optimized for Synchronous Buck
Converters Including Capacitive Induced
Turn-on Immunity
l 100% RG Tested
l Lead-Free
l
HEXFET® Power MOSFET
VDSS
RDS(on) max
ID
20V
6.5mΩ
110A
D-Pak
IRFR3711
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
I-Pak
IRFU3711
Absolute Maximum Ratings
Symbol
Parameter
Max
Units
20
V
VDS
Drain-Source Voltage
VGS
ID @ TC = 25°C
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
± 20
100
ID @ TC = 100°C
69
IDM
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
PD @TA = 25°C
Maximum Power Dissipation
PD @TC = 25°C
Maximum Power Dissipation
TJ, TSTG
Linear Derating Factor
Junction and Storage Temperature Range
c
f
f
A
440
g
2.5
W
120
0.96
-55 to +150
W/°C
°C
Thermal Resistance
Symbol
Parameter
h
RθJC
Junction-to-Case
RθJA
Junction-to-Ambient (PCB Mount)
RθJA
Junction-to-Ambient
h
gh
Typ
Max
–––
1.04
–––
50
–––
110
Units
°C/W
Notes through are on page 10
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1
1/7/05
IRFR/U3711PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
IGSS
Min
Typ
Max Units
20
–––
–––
–––
0.022
–––
–––
5.2
6.5
–––
6.7
8.5
V
Conditions
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
mΩ
e
e
1.0
–––
3.0
–––
–––
140
–––
–––
20
–––
–––
100
VDS = 16V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
200
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-200
Drain-to-Source Leakage Current
V
VGS = 10V, ID = 15A
VGS = 4.5V, ID = 12A
VDS = VGS, ID = 250µA
VDS = 20V, VGS = 0V
µA
nA
VDS = 16V, VGS = 0V
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min
Typ
Max Units
53
–––
–––
Conditions
gfs
Forward Transconductance
Qg
Total Gate Charge
–––
29
44
ID = 15A
Qgs
Gate-to-Source Charge
–––
7.3
–––
VDS = 10V
Qgd
Gate-to-Drain ("Miller") Charge
–––
8.9
–––
Qoss
Output Gate Charge
–––
33
–––
RG
Gate Resistance
0.3
–––
2.5
td(on)
Turn-On Delay Time
–––
12
–––
tr
Rise Time
–––
220
–––
td(off)
Turn-Off Delay Time
–––
17
–––
tf
Fall Time
–––
12
–––
VGS = 4.5V
Ciss
Input Capacitance
–––
2980
–––
VGS = 0V
Coss
Output Capacitance
–––
1770
–––
Crss
Reverse Transfer Capacitance
–––
280
–––
S
nC
VDS = 16V, ID = 30A
e
VGS = 4.5V
VGS = 0V, VDS = 10V
Ω
VDD = 10V
ns
pF
ID = 30A
RG = 1.8Ω
e
VDS = 10V
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
Parameter
Single Pulse Avalanche Energy
Typ
Max
Units
EAS
–––
460
mJ
IAR
Avalanche Current
–––
30
A
c
d
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
Min
–––
Typ
–––
(Body Diode)
110
f
c
VSD
Diode Forward Voltage
–––
–––
440
–––
0.88
1.3
–––
0.82
–––
showing the
integral reverse
V
trr
Reverse Recovery Time
–––
50
75
ns
Qrr
Reverse Recovery Charge
–––
61
92
nC
trr
Reverse Recovery Time
–––
48
72
ns
Qrr
Reverse Recovery Charge
–––
65
98
nC
2
Conditions
MOSFET symbol
A
Pulsed Source Current
(Body Diode)
Max Units
p-n junction diode.
TJ = 25°C, IS = 30A, VGS = 0V
TJ = 125°C, IS = 30A, VGS = 0V
e
e
TJ = 25°C, IF = 16A, VR = 10V
di/dt = 100A/µs
e
TJ = 125°C, IF = 16A, VR = 10V
di/dt = 100A/µs
e
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IRFR/U3711PbF
1000
1000
VGS
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
VGS
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
100
2.7V
100
2.7V
20µs PULSE WIDTH
TJ = 25 °C
10
0.1
1
10
10
0.1
100
Fig 1. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.0
TJ = 25 ° C
TJ = 150 ° C
100
V DS = 25V
20µs PULSE WIDTH
4.0
5.0
6.0
7.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
1000
3.0
1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
10
2.0
20µs PULSE WIDTH
TJ = 150 ° C
8.0
ID = 110A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFR/U3711PbF
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
C, Capacitance(pF)
Coss = Cds + Cgd
10000
Ciss
Coss
1000
Crss
VGS , Gate-to-Source Voltage (V)
10
100000
ID = 30A
VDS = 16V
VDS = 10V
8
6
4
2
100
1
10
100
0
VDS , Drain-to-Source Voltage (V)
0
10
20
30
40
50
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
1000
1000
TJ = 150 ° C
10
TJ = 25 ° C
1
0.1
0.2
V GS = 0 V
0.8
1.4
2.0
VSD,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
2.6
100
100µsec
1msec
10
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
1
1
10
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFR/U3711PbF
120
V DS
LIMITED BY PACKAGE
VGS
ID , Drain Current (A)
100
RD
D.U.T.
RG
+
-VDD
80
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
60
40
Fig 10a. Switching Time Test Circuit
VDS
20
90%
0
25
50
75
100
TC , Case Temperature
125
150
( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
PDM
0.10
0.1
t1
0.05
0.02
0.01
0.01
0.00001
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFR/U3711PbF
EAS , Single Pulse Avalanche Energy (mJ)
1400
15V
TOP
1200
L
VDS
DRIVER
BOTTOM
ID
13A
19A
30A
1000
D.U.T
RG
+
V
- DD
IAS
20V
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
A
800
600
400
200
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
VGS
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
6
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRFR/U3711PbF
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D.U.T
+
-
-
+
RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
P.W.
Period
D=
+
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7
IRFR/U3711PbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: T HIS IS AN IRF R120
WIT H ASS EMBLY
LOT CODE 1234
ASS EMBLED ON WW 16, 1999
IN T HE AS S EMBLY LINE "A"
PART NUMBER
INT ERNATIONAL
RECTIF IER
LOGO
Note: "P" in as s embly line position
indicates "Lead-F ree"
IRFU120
12
916A
34
AS S EMBLY
LOT CODE
DAT E CODE
YEAR 9 = 1999
WEEK 16
LINE A
OR
PART NUMBER
INTERNAT IONAL
RECTIFIER
LOGO
IRFU120
12
AS S EMBLY
LOT CODE
8
34
DAT E CODE
P = DESIGNAT ES LEAD-F REE
PRODUCT (OPTIONAL)
YEAR 9 = 1999
WEEK 16
A = AS SEMBLY SIT E CODE
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IRFR/U3711PbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
EXAMPLE: T HIS IS AN IRFU120
WIT H AS SEMBLY
LOT CODE 5678
ASS EMBLED ON WW 19, 1999
IN T HE AS SEMBLY LINE "A"
INT ERNAT IONAL
RECT IFIER
LOGO
PART NUMBER
IRF U120
919A
56
78
ASSEMBLY
LOT CODE
Note: "P" in assembly line
position indicates "Lead-Free"
DAT E CODE
YEAR 9 = 1999
WEEK 19
LINE A
OR
INT ERNAT IONAL
RECT IFIER
LOGO
PART NUMBER
IRFU120
56
AS SEMBLY
LOT CODE
www.irf.com
78
DAT E CODE
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
YEAR 9 = 1999
WEEK 19
A = AS SEMBLY SIT E CODE
9
IRFR/U3711PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 1.0mH
RG = 25Ω, IAS = 30A.
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to
application note #AN-994
Rθ is measured at TJ approximately at 90°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A.
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 1/05
10
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/