IRF IRLU3714PBF

PD - 95554A
IRLR3714PbF
IRLU3714PbF
SMPS MOSFET
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
l Lead-Free
Benefits
Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
HEXFET® Power MOSFET
VDSS
RDS(on) max
ID
20V
20mΩ
36A
l
D-Pak
IRLR3714
I-Pak
IRLU3714
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TC
ID @ TC
I DM
PD @TC
PD @TC
= 25°C
= 70°C
= 25°C
= 70°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation ƒ
Maximum Power Dissipation ƒ
Linear Derating Factor
Junction and Storage Temperature Range
Max.
Units
20
± 20
36 …
31
140
47
33
0.31
-55 to + 175
V
V
A
W
W
W/°C
°C
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient (PCB mount) „
Typ.
Max.
Units
–––
–––
–––
3.2
50
110
°C/W
Notes  through … are on page 10
www.irf.com
1
1/11/05
IRLR/U3714PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Min.
20
–––
Static Drain-to-Source On-Resistance –––
–––
Gate Threshold Voltage
1.0
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ. Max. Units
–––
––– V
0.022 ––– V/°C
15
20
mΩ
21
28
–––
3.0
V
–––
20
µA
–––
100
–––
200
nA
––– -200
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 18A ƒ
VGS = 4.5V, ID = 14A ƒ
VDS = VGS, ID = 250µA
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
VGS = 16V
VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
17
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
6.5
1.8
2.9
7.1
8.7
78
10
4.5
670
470
68
Max. Units
Conditions
–––
S
VDS = 10V, ID = 14A
9.7
ID = 14A
–––
nC VDS = 10V
–––
VGS = 4.5V
–––
VGS = 0V, VDS = 10V
–––
VDD = 10V
–––
ID = 14A
ns
–––
RG = 1.8Ω
–––
VGS = 4.5V ƒ
–––
VGS = 0V
–––
VDS = 10V
–––
pF
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche Energy‚
Avalanche Current
Typ.
Max.
Units
–––
–––
72
14
mJ
A
Diode Characteristics
Symbol
IS
I SM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
VSD
Diode Forward Voltage
trr
Q rr
trr
Q rr
Reverse
Reverse
Reverse
Reverse
2
Recovery
Recovery
Recovery
Recovery
Time
Charge
Time
Charge
Min. Typ. Max. Units
––– 36…
A
––– 140
–––
–––
–––
–––
–––
–––
––– 1.3
0.88 –––
35
53
34
51
35
53
35
53
V
ns
nC
ns
nC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
TJ = 25°C, IS = 18A, VGS = 0V ƒ
TJ = 125°C, IS = 18A, VGS = 0V ƒ
TJ = 25°C, IF = 18A, VR=10V
di/dt = 100A/µs ƒ
TJ = 125°C, IF = 18A, VR=10V
di/dt = 100A/µs ƒ
www.irf.com
IRLR/U3714PbF
10000
1000
VGS
15V
10V
4.5V
3.0V
2.7V
2.5V
2.2V
BOTTOM 2.0V
VGS
15V
10V
4.5V
3.0V
2.7V
2.5V
2.2V
BOTTOM 2.0V
TOP
1000
100
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
10
1
2.0V
0.1
100
10
2.0V
1
20µs PULSE WIDTH
Tj = 175°C
20µs PULSE WIDTH
Tj = 25°C
0.1
0.01
0.1
1
10
0.1
100
1
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
1000.00
I D = 36A
100.00
T J = 175°C
10.00
VDS = 15V
20µs PULSE WIDTH
1.00
2.0
4.0
6.0
8.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
10.0
(Normalized)
2.0
T J = 25°C
RDS(on) , Drain-to-Source On Resistance
ID, Drain-to-Source Current (Α)
10
1.5
1.0
0.5
V GS = 10V
0.0
-60
-40
-20
0
20
40
60
80
TJ , Junction Temperature
100 120 140 160 180
( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRLR/U3714PbF
15
10000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
ID = 14A
VDS = 16V
VDS = 10V
12
VGS , Gate-to-Source Voltage (V)
C, Capacitance(pF)
Coss = Cds + Cgd
1000
Ciss
Coss
100
Crss
10
9
6
3
0
1
10
0
100
4
8
12
16
20
QG, Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000.00
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
T J = 175°C
100.00
100
10.00
T J = 25°C
1.00
100µsec
10
1msec
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
0.1
0.10
0.0
1.0
2.0
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10msec
1
3.0
1
10
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com
IRLR/U3714PbF
40
RD
V DS
LIMITED BY PACKAGE
I D , Drain Current (A)
V GS
D.U.T.
30
RG
20
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+
-V DD
4.5V
Fig 10a. Switching Time Test Circuit
VDS
10
90%
0
25
50
75
100
TC , Case Temperature
125
150
( °C)
175
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
(Z thJC)
10
D = 0.50
1
Thermal Response
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P DM
0.1
t1
t2
Notes:
1. Duty factor D =
2. Peak T
0.01
0.00001
0.0001
0.001
0.01
t1/ t 2
J = P DM x Z thJC
+TC
0.1
1
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRLR/U3714PbF
150
ID
15V
D.U.T
RG
+
V
- DD
IAS
20V
tp
A
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
E AS , Single Pulse Avalanche Energy (mJ)
VDS
120
DRIVER
L
TOP
5.9A
BOTTOM
10A
14A
90
60
30
0
25
50
75
100
125
150
175
( °C)
Starting T , Junction
Temperature
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
4.5 V
50KΩ
12V
.2µF
.3µF
QGS
QGD
D.U.T.
VG
+
V
- DS
VGS
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com
IRLR/U3714PbF
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D.U.T
ƒ
+
‚
-
-
„
+

RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
P.W.
Period
D=
+
-
V DD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
*
ISD
VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
www.irf.com
7
IRLR/U3714PbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
E XAMPLE: T HIS IS AN IRFR120
WIT H AS S E MBLY
LOT CODE 1234
AS S EMBL ED ON WW 16, 1999
IN T HE AS S EMBLY LINE "A"
PART NUMBE R
INTE RNAT IONAL
RE CT IF IER
LOGO
Note: "P" in ass embly line pos ition
indicates "L ead-F ree"
IRF U120
12
916A
34
AS S EMB LY
LOT CODE
DAT E CODE
YEAR 9 = 1999
WEE K 16
LINE A
OR
PART NUMB ER
INT ERNAT IONAL
RE CTIF IER
LOGO
IRF U120
12
AS S E MB LY
LOT CODE
8
34
DAT E CODE
P = DE S IGNAT ES L EAD-FREE
PRODUCT (OPT IONAL)
YE AR 9 = 1999
WEE K 16
A = AS S E MB LY S ITE CODE
www.irf.com
IRLR/U3714PbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
EXAMPLE: THIS IS AN IRF U120
WITH ASSEMBLY
LOT CODE 5678
ASSEMBLED ON WW 19, 1999
IN THE ASSEMBLY LINE "A"
PART NUMBER
INT ERNAT IONAL
RECT IFIER
LOGO
IRFU120
919A
56
78
ASSEMBLY
LOT CODE
Note: "P" in as s embly line
pos ition indicates "Lead-Free"
DAT E CODE
YEAR 9 = 1999
WEEK 19
LINE A
OR
PART NUMBE R
INT ERNAT IONAL
RECTIF IER
LOGO
IRFU120
56
AS SEMBLY
LOT CODE
www.irf.com
78
DATE CODE
P = DES IGNAT ES LEAD-F REE
PRODUCT (OPTIONAL)
YEAR 9 = 1999
WE EK 19
A = ASS EMBLY SIT E CODE
9
IRLR/U3714PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Notes:
 Repetitive rating; pulse width limited by
„ When mounted on 1" square PCB ( FR-4 or G-10
Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
max. junction temperature.
‚ Starting TJ = 25°C, L = 0.69 mH
RG = 25Ω, IAS = 14A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
… Calculated continuous current based on maximum
allowable junction temperature; Package limitation
current is 30A
Data and specifications subject to change without notice.
These products have been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.01/05
10
www.irf.com
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/