PD - 94184D IRL3713 IRL3713S IRL3713L SMPS MOSFET Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l 100% RG Tested HEXFET® Power MOSFET l VDSS 30V RDS(on) max (mW) ID 3.0@VGS = 10V 260A Benefits l l l Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current TO-220AB IRL3713 D2Pak IRL3713S TO-262 IRL3713L Absolute Maximum Ratings Max Units VDS Symbol Drain-Source Voltage Parameter 30 V VGS Gate-to-Source Voltage ± 20 V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V h 180h 1040h 260 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation 330 PD @Tc = 100°C Maximum Power Dissipation 170 TJ, TSTG Linear Derating Factor Junction and Storage Temperature Range c A W W/°C °C 2.2 -55 to +175 Thermal Resistance Symbol Parameter i RθJC Junction-to-Case RqCS Case-to-Sink, Flat, Greased Surface RθJA Junction-to-Ambient RθJA Junction-to-Ambient (PCB Mount) Notes fi f gi Typ Max ––– 0.45 0.50 ––– ––– 62 ––– 40 Units °C/W through are on page 11 www.irf.com 1 11/12/03 IRL3713/S/L Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS IGSS Min Typ Max Units 30 ––– ––– ––– 0.027 ––– ––– 2.6 3.0 ––– 3.3 4.0 1.0 ––– 2.5 ––– 50 ––– ––– 20 ––– ––– 100 Gate-to-Source Forward Leakage ––– ––– 200 Gate-to-Source Reverse Leakage ––– ––– -200 Conditions VGS = 0V, I D = 250µA V/°C Reference to 25°C, I D = 1mA mΩ ––– Drain-to-Source Leakage Current V V VGS = 10V, ID = 38A VGS = 4.5V, I D = 30A e e VDS = VGS, ID = 250µA VDS = 30V, VGS = 0V µA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V Dynamic @ TJ = 25°C (unless otherwise specified) Min Typ Max Units gfs Qg Symbol Forward Transconductance Parameter 76 ––– ––– Total Gate Charge ––– 75 110 Qgs Gate-to-Source Charge ––– 24 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 37 ––– VGS = 4.5V QOSS Output Gate Charge 61 92 VGS = 0V, VDS = 15V S Conditions VDS = 15V, ID = 30A I D = 30A nC VDS = 15V f Ω RG Gate Resistance 0.5 ––– 3.4 td(on) Turn-On Delay Time ––– 16 ––– tr Rise Time ––– 160 ––– td(off) Turn-Off Delay Time ––– 40 ––– tf Fall Time ––– 57 ––– VGS = 4.5V Ciss Input Capacitance ––– 5890 ––– VGS = 0V Coss Output Capacitance ––– 3130 ––– Crss Reverse Transfer Capacitance ––– 630 ––– VDD = 15V ns pF I D = 30A RG = 1.8Ω e VDS = 15V ƒ = 1.0MHz Avalanche Characteristics Symbol EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c d Typ Max Units ––– 1530 mJ ––– 46 A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current Min ––– Typ ––– Max Units 260 (Body Diode) Pulsed Source Current ch h showing the h ––– ––– 1040 ––– 0.80 1.3 ––– 0.68 ––– (Body Diode) A integral reverse VSD Diode Forward Voltage trr Reverse Recovery Time ––– 75 110 ns Qrr Reverse Recovery Charge ––– 140 210 nC trr Reverse Recovery Time ––– 78 120 ns Qrr Reverse Recovery Charge ––– 160 240 nC 2 Conditions MOSFET symbol V p-n junction diode. TJ = 25°C, IS = 30A, VGS = 0V e e TJ = 125°C, I S = 30A, VGS = 0V TJ = 25°C, IF = 30A, VR = 0V di/dt = 100A/µs e TJ = 125°C, I F = 30A, VR = 20V di/dt = 100A/µs e www.irf.com IRL3713/S/L 1000 1000 VGS 10V 8.0V 6.0V 4.5V 4.0V 3.3V 2.8V BOTTOM 2.5V 100 10 1 2.5V 20µs PULSE WIDTH TJ = 25 °C 0.1 0.1 1 10 100 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 175 ° C 100 10 TJ = 25 ° C V DS = 15V 20µs PULSE WIDTH 4.0 Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 2.0 3.5 1 VDS , Drain-to-Source Voltage (V) 1000 3.0 20µs PULSE WIDTH TJ = 175 °C 1 0.1 100 Fig 1. Typical Output Characteristics VGS , Gate-to-Source Voltage (V) 2.5V 10 VDS , Drain-to-Source Voltage (V) 1 2.5 VGS 10V 8.0V 6.0V 4.5V 4.0V 3.3V 2.8V BOTTOM 2.5V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 4.5 ID = 260A 1.5 1.0 0.5 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRL3713/S/L VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd C, Capacitance(pF) Coss = Cds + Cgd 10000 Ciss Coss Crss 1000 VGS , Gate-to-Source Voltage (V) 14 100000 ID = 30A 12 10 8 6 4 2 100 0 1 10 0 100 40 120 160 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 10000 OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 175 ° C 100 1000 ID , Drain Current (A) ISD , Reverse Drain Current (A) 80 QG , Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 10 TJ = 25 ° C 10us 100us 100 1 1ms T C = 25 ° C T J = 175° C 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 VDS = 24V VDS = 15V VDS = 6V 1.6 10ms Single Pulse 10 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRL3713/S/L 300 V DS LIMITED BY PACKAGE VGS I D , Drain Current (A) 250 RD D.U.T. RG + -VDD 200 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 150 100 Fig 10a. Switching Time Test Circuit VDS 50 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM 0.01 t1 t2 0.001 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRL3713/S/L EAS , Single Pulse Avalanche Energy (mJ) 3000 15V TOP 2500 DRIVER L VDS BOTTOM ID 30A 38A 46A 2000 D.U.T RG + V - DD IAS 20V VGS tp A 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 1500 1000 500 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 10 V 50KΩ 12V .2µF .3µF QGS QGD D.U.T. VG + V - DS VGS 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRL3713/S/L Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + RG • • • • Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRL3713/S/L TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 3 14.09 (.555) 13.47 (.530) 4.06 (.160) 3.55 (.140) 3X 1.40 (.055) 3X 1.15 (.045) 0.93 (.037) 0.69 (.027) 0.36 (.014) 3X M B A M 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN THE AS S EMBLY LINE "C" INTERNATIONAL RECTIFIER LOGO AS S EMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C For GB Production EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN THE AS S E MBLY LINE "C" INTERNATIONAL RECTIFIER LOGO LOT CODE 8 PART NUMBER DATE CODE www.irf.com IRL3713/S/L D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF530S WIT H LOT CODE 8024 ASS EMBLED ON WW 02, 2000 IN T HE ASS EMBLY LINE "L" INT ERNAT IONAL RECT IFIER LOGO PART NUMBER F 530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L ASS EMBLY LOT CODE For GB Production T HIS IS AN IRF530S WIT H LOT CODE 8024 ASS EMBLED ON WW 02, 2000 IN T HE ASS EMBLY LINE "L" INT ERNAT IONAL RECT IFIER LOGO LOT CODE www.irf.com PART NUMBER F 530S DAT E CODE 9 IRL3713/S/L TO-262 Package Outline Dimensions are shown in millimeters (inches) IGBT 1- GATE 2- COLLECTOR TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 ASS EMBLED ON WW 19, 1997 IN THE ASS EMBLY LINE "C" INT ERNATIONAL RECTIFIER LOGO AS SEMBLY LOT CODE 10 PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C www.irf.com IRL3713/S/L D2Pak Tape & Reel Information TRR 1.60 (.063) 1.50 (.059) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 11.60 (.457) 11.40 (.449) 1.65 (.065) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 1.75 (.069) 1.25 (.049) 10.90 (.429) 10.70 (.421) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400µs; duty cycle ≤ 2%. This is only applied to TO-220A package Starting TJ = 25°C, L = 1.4mH RG = 25Ω, IAS = 46A,VGS=10V This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. Rθ is measured at TJ approximately 90°C Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 11/03 www.irf.com 11