IRF IRL3713

PD - 94184D
IRL3713
IRL3713S
IRL3713L
SMPS MOSFET
Applications
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
l 100% RG Tested
HEXFET® Power MOSFET
l
VDSS
30V
RDS(on) max (mW)
ID
3.0@VGS = 10V
260A†
Benefits
l
l
l
Ultra-Low Gate Impedance
Very Low RDS(on) at 4.5V VGS
Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRL3713
D2Pak
IRL3713S
TO-262
IRL3713L
Absolute Maximum Ratings
Max
Units
VDS
Symbol
Drain-Source Voltage
Parameter
30
V
VGS
Gate-to-Source Voltage
± 20
V
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
h
180h
1040h
260
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
PD @TC = 25°C
Maximum Power Dissipation
330
PD @Tc = 100°C
Maximum Power Dissipation
170
TJ, TSTG
Linear Derating Factor
Junction and Storage Temperature Range
c
A
W
W/°C
°C
2.2
-55 to +175
Thermal Resistance
Symbol
Parameter
i
RθJC
Junction-to-Case
RqCS
Case-to-Sink, Flat, Greased Surface
RθJA
Junction-to-Ambient
RθJA
Junction-to-Ambient (PCB Mount)
Notes 
fi
f
gi
Typ
Max
–––
0.45
0.50
–––
–––
62
–––
40
Units
°C/W
through ‡ are on page 11
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1
11/12/03
IRL3713/S/L
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
IGSS
Min
Typ
Max Units
30
–––
–––
–––
0.027
–––
–––
2.6
3.0
–––
3.3
4.0
1.0
–––
2.5
–––
50
–––
–––
20
–––
–––
100
Gate-to-Source Forward Leakage
–––
–––
200
Gate-to-Source Reverse Leakage
–––
–––
-200
Conditions
VGS = 0V, I D = 250µA
V/°C Reference to 25°C, I D = 1mA
mΩ
–––
Drain-to-Source Leakage Current
V
V
VGS = 10V, ID = 38A
VGS = 4.5V, I D = 30A
e
e
VDS = VGS, ID = 250µA
VDS = 30V, VGS = 0V
µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Min
Typ
Max Units
gfs
Qg
Symbol
Forward Transconductance
Parameter
76
–––
–––
Total Gate Charge
–––
75
110
Qgs
Gate-to-Source Charge
–––
24
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
37
–––
VGS = 4.5V
QOSS
Output Gate Charge
61
92
VGS = 0V, VDS = 15V
S
Conditions
VDS = 15V, ID = 30A
I D = 30A
nC
VDS = 15V
f
Ω
RG
Gate Resistance
0.5
–––
3.4
td(on)
Turn-On Delay Time
–––
16
–––
tr
Rise Time
–––
160
–––
td(off)
Turn-Off Delay Time
–––
40
–––
tf
Fall Time
–––
57
–––
VGS = 4.5V
Ciss
Input Capacitance
–––
5890
–––
VGS = 0V
Coss
Output Capacitance
–––
3130
–––
Crss
Reverse Transfer Capacitance
–––
630
–––
VDD = 15V
ns
pF
I D = 30A
RG = 1.8Ω
e
VDS = 15V
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
IAR
Avalanche Current
c
d
Typ
Max
Units
–––
1530
mJ
–––
46
A
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
Min
–––
Typ
–––
Max Units
260
(Body Diode)
Pulsed Source Current
ch
h
showing the
h
–––
––– 1040
–––
0.80
1.3
–––
0.68
–––
(Body Diode)
A
integral reverse
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
–––
75
110
ns
Qrr
Reverse Recovery Charge
–––
140
210
nC
trr
Reverse Recovery Time
–––
78
120
ns
Qrr
Reverse Recovery Charge
–––
160
240
nC
2
Conditions
MOSFET symbol
V
p-n junction diode.
TJ = 25°C, IS = 30A, VGS = 0V
e
e
TJ = 125°C, I S = 30A, VGS = 0V
TJ = 25°C, IF = 30A, VR = 0V
di/dt = 100A/µs
e
TJ = 125°C, I F = 30A, VR = 20V
di/dt = 100A/µs
e
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IRL3713/S/L
1000
1000
VGS
10V
8.0V
6.0V
4.5V
4.0V
3.3V
2.8V
BOTTOM 2.5V
100
10
1
2.5V
20µs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 175 ° C
100
10
TJ = 25 ° C
V DS = 15V
20µs PULSE WIDTH
4.0
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
2.0
3.5
1
VDS , Drain-to-Source Voltage (V)
1000
3.0
20µs PULSE WIDTH
TJ = 175 °C
1
0.1
100
Fig 1. Typical Output Characteristics
VGS , Gate-to-Source Voltage (V)
2.5V
10
VDS , Drain-to-Source Voltage (V)
1
2.5
VGS
10V
8.0V
6.0V
4.5V
4.0V
3.3V
2.8V
BOTTOM 2.5V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
4.5
ID = 260A
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRL3713/S/L
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
C, Capacitance(pF)
Coss = Cds + Cgd
10000
Ciss
Coss
Crss
1000
VGS , Gate-to-Source Voltage (V)
14
100000
ID = 30A
12
10
8
6
4
2
100
0
1
10
0
100
40
120
160
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
10000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 175 ° C
100
1000
ID , Drain Current (A)
ISD , Reverse Drain Current (A)
80
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
10
TJ = 25 ° C
10us
100us
100
1
1ms
T C = 25 ° C
T J = 175° C
0.1
0.2
V GS = 0 V
0.4
0.6
0.8
1.0
1.2
1.4
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
VDS = 24V
VDS = 15V
VDS = 6V
1.6
10ms
Single Pulse
10
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRL3713/S/L
300
V DS
LIMITED BY PACKAGE
VGS
I D , Drain Current (A)
250
RD
D.U.T.
RG
+
-VDD
200
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
150
100
Fig 10a. Switching Time Test Circuit
VDS
50
90%
0
25
50
75
100
125
150
175
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
PDM
0.01
t1
t2
0.001
0.00001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRL3713/S/L
EAS , Single Pulse Avalanche Energy (mJ)
3000
15V
TOP
2500
DRIVER
L
VDS
BOTTOM
ID
30A
38A
46A
2000
D.U.T
RG
+
V
- DD
IAS
20V
VGS
tp
A
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
1500
1000
500
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
10 V
50KΩ
12V
.2µF
.3µF
QGS
QGD
D.U.T.
VG
+
V
- DS
VGS
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRL3713/S/L
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
ƒ
+
‚
-
-
„
+

RG
•
•
•
•
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7
IRL3713/S/L
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
2.87 (.113)
2.62 (.103)
-B-
3.78 (.149)
3.54 (.139)
4.69 (.185)
4.20 (.165)
-A-
1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
1.15 (.045)
MIN
1
2
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
3
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
3X
1.40 (.055)
3X
1.15 (.045)
0.93 (.037)
0.69 (.027)
0.36 (.014)
3X
M
B A M
0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
EXAMPLE: THIS IS AN IRF1010
LOT CODE 1789
AS S EMBLED ON WW 19, 1997
IN THE AS S EMBLY LINE "C"
INTERNATIONAL
RECTIFIER
LOGO
AS S EMBLY
LOT CODE
PART NUMBER
DAT E CODE
YEAR 7 = 1997
WEEK 19
LINE C
For GB Production
EXAMPLE: THIS IS AN IRF1010
LOT CODE 1789
AS S EMBLED ON WW 19, 1997
IN THE AS S E MBLY LINE "C"
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE
8
PART NUMBER
DATE CODE
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IRL3713/S/L
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
T HIS IS AN IRF530S WIT H
LOT CODE 8024
ASS EMBLED ON WW 02, 2000
IN T HE ASS EMBLY LINE "L"
INT ERNAT IONAL
RECT IFIER
LOGO
PART NUMBER
F 530S
DAT E CODE
YEAR 0 = 2000
WEEK 02
LINE L
ASS EMBLY
LOT CODE
For GB Production
T HIS IS AN IRF530S WIT H
LOT CODE 8024
ASS EMBLED ON WW 02, 2000
IN T HE ASS EMBLY LINE "L"
INT ERNAT IONAL
RECT IFIER
LOGO
LOT CODE
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PART NUMBER
F 530S
DAT E CODE
9
IRL3713/S/L
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
IGBT
1- GATE
2- COLLECTOR
TO-262 Part Marking Information
EXAMPLE: T HIS IS AN IRL3103L
LOT CODE 1789
ASS EMBLED ON WW 19, 1997
IN THE ASS EMBLY LINE "C"
INT ERNATIONAL
RECTIFIER
LOGO
AS SEMBLY
LOT CODE
10
PART NUMBER
DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C
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IRL3713/S/L
D2Pak Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
11.60 (.457)
11.40 (.449)
1.65 (.065)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ This is only applied to TO-220A package
‚ Starting TJ = 25°C, L = 1.4mH
RG = 25Ω, IAS = 46A,VGS=10V
… This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
† Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
‡ Rθ is measured at TJ approximately 90°C
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 11/03
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11