KERSEMI IRFU3708PBF

PD - 95071A
IRFR3708PbF
IRFU3708PbF
SMPS MOSFET
HEXFET® Power MOSFET
Applications
l
l
l
High Frequency DC-DC Isolated Converters
with Synchronous Rectification for Telecom
and Industrial Use
VDSS
RDS(on) max
ID
30V
12.5mΩ
61A„
High Frequency Buck Converters for
Computer Processor Power
Lead-Free
Benefits
l
Ultra-Low Gate Impedance
l
Very Low RDS(on) at 4.5V VGS
l
Fully Characterized Avalanche Voltage
and Current
D-Pak
IRFR3708
I-Pak
IRFU3708
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
Junction and Storage Temperature Range
Max.
Units
30
± 12
61 „
51 „
244
87
61
0.58
-55 to + 175
V
V
A
W
W
W/°C
°C
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
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Typ.
Max.
Units
–––
–––
–––
1.73
50
110
°C/W
1
12/13/04
IRFR/U3708PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Min.
30
–––
–––
Static Drain-to-Source On-Resistance –––
–––
Gate Threshold Voltage
0.6
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ.
–––
0.028
8.5
10.0
15.0
–––
–––
–––
–––
–––
Max. Units
––– V
––– V/°C
12.5
14.0 mΩ
30.0
2.0
V
20
µA
100
200
nA
-200
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 15A ƒ
VGS = 4.5V, ID = 12A ƒ
VGS = 2.8V, ID = 7.5A ƒ
VDS = VGS, ID = 250µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 12V
VGS = -12V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
49
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
24
6.7
5.8
14
7.2
50
17.6
3.7
2417
707
52
Max. Units
Conditions
–––
S
VDS = 15V, ID = 50A
–––
ID = 24.8A
–––
nC
VDS = 15V
–––
VGS = 4.5V ƒ
21
VGS = 0V, ID = 24.8A, VDS = 15V
–––
VDD = 15V
–––
ID = 24.8A
ns
–––
RG = 0.6Ω
–––
VGS = 4.5V ƒ
–––
VGS = 0V
–––
VDS = 15V
–––
pF
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche Energy‚
Avalanche Current
Typ.
Max.
Units
–––
–––
213
62
mJ
A
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
trr
Qrr
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse
Reverse
Reverse
Reverse
Recovery
Recovery
Recovery
Recovery
Time
Charge
Time
Charge
Min. Typ. Max. Units
–––
–––
61„
–––
–––
244
––– 0.88
––– 0.80
––– 41
––– 64
––– 43
––– 70
1.3
–––
62
96
65
105
A
V
ns
nC
ns
nC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
S
TJ = 25°C, IS = 31A, VGS = 0V ƒ
TJ = 125°C, IS = 31A, VGS = 0V ƒ
TJ = 25°C, IF = 31A, VR=20V
di/dt = 100A/µs ƒ
TJ = 125°C, IF = 31A, VR=20V
di/dt = 100A/µs ƒ
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IRFR/U3708PbF
1000
VGS
TOP
10.0V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.7V
100
2.7V
10
VGS
10.0V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.7V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
1000
100
2.7V
10
20µs PULSE WIDTH
Tj = 175°C
20µs PULSE WIDTH
Tj = 25°C
1
1
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.5
TJ = 25 ° C
TJ = 175 ° C
10
2.0
V DS = 15V
20µs PULSE WIDTH
3.0
4.0
5.0
6.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
1000
100
1
VDS, Drain-to-Source Voltage (V)
ID = 61A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFR/U3708PbF
3500
10
2800
VGS , Gate-to-Source Voltage (V)
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
Ciss
2100
1400
Coss
700
Crss
0
1
10
ID = 24.8A
8
6
4
2
0
100
0
VDS , Drain-to-Source Voltage (V)
20
30
40
50
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 175 ° C
100
ID , Drain Current (A)
ISD , Reverse Drain Current (A)
10
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
TJ = 25 ° C
10
10us
100
100us
1ms
10
1
10ms
0.1
0.2
TC = 25 ° C
TJ = 175 ° C
Single Pulse
V GS = 0 V
0.8
1.4
2.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
VDS = 15V
2.6
1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFR/U3708PbF
RD
VDS
70
LIMITED BY PACKAGE
VGS
60
D.U.T.
ID , Drain Current (A)
RG
+
-VDD
50
10V
40
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
30
Fig 10a. Switching Time Test Circuit
20
VDS
90%
10
0
25
50
75
100
125
150
175
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1 D = 0.50
0.20
0.10
PDM
0.05
0.1
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
0.025
(
RDS(on), Drain-to -Source On ResistanceΩ)
RDS ( on ) , Drain-to-Source On Resistance Ω
( )
IRFR/U3708PbF
0.020
0.015
VGS = 4.5V
0.010
VGS = 10V
0.005
0
50
100
150
200
250
0.017
0.015
0.013
0.011
ID = 31A
0.009
0.007
2.0
300
ID , Drain Current ( A )
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
VGS
QGS
.3µF
D.U.T.
+
V
- DS
QGD
600
VG
EAS , Single Pulse Avalanche Energy (mJ)
50KΩ
.2µF
12V
VGS
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 14a&b. Gate Charge Test Circuit
and Waveform
15V
V(BR)DSS
tp
L
VDS
D.U.T
RG
IAS
20V
tp
I AS
DRIVER
+
- VDD
0.01Ω
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
A
ID
10A
20.7A
BOTTOM 24.8A
TOP
480
360
240
120
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature ( °C)
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
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IRFR/U3708PbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: T HIS IS AN IRFR120
WIT H ASSEMBLY
LOT CODE 1234
ASSEMBLED ON WW 16, 1999
IN THE ASSEMBLY LINE "A"
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
Note: "P" in assembly line position
indicates "Lead-Free"
IRFU120
12
916A
34
ASSEMBLY
LOT CODE
DATE CODE
YEAR 9 = 1999
WEEK 16
LINE A
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
12
ASSEMBLY
LOT CODE
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34
DATE CODE
P = DESIGNAT ES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 9 = 1999
WEEK 16
A = ASSEMBLY SIT E CODE
7
IRFR/U3708PbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
EXAMPLE: THIS IS AN IRF U120
WIT H ASS EMBLY
LOT CODE 5678
ASS EMB LED ON WW 19, 1999
IN T HE AS SEMBLY LINE "A"
INT ERNAT IONAL
RE CT IF IER
LOGO
PART NUMBER
IRFU120
919A
56
78
AS SEMBLY
LOT CODE
Note: "P" in as s embly line
pos ition indicates "Lead-Free"
DAT E CODE
YE AR 9 = 1999
WE EK 19
LINE A
OR
INT ERNAT IONAL
RECT IFIER
LOGO
PART NUMB ER
IRFU120
56
AS S EMBLY
LOT CODE
8
78
DAT E CODE
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
YEAR 9 = 1999
WEEK 19
A = AS SEMBLY SIT E CODE
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IRFR/U3708PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
TRL
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 0.7 mH
RG = 25Ω, IAS = 24.8 A.
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ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
„ Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A.
9