IRF 25TTS12FP

Bulletin I2135 rev. D 03/99
SAFEIR Series
25TTS..FP
PHASE CONTROL SCR
TO-220 FULLPAK
Description/Features
The 25TTS..FP SAFE IR series of silicon
controlled rectifiers are specifically designed for
medium power switching and phase control
applications. The glass passivation technology
used has reliable operation up to 125° C junction
temperature.
VT
< 1.25V @ 16A
ITSM
= 300A
VRRM 800 to 1600V
Typical applications are in input rectification (soft
start) and these products are designed to be used
with International Rectifier input diodes, switches
and output rectifiers which are available in identical
package outlines.
Fully isolated package (VINS = 2500 VRMS)
UL E78996 approved
Output Current in Typical Applications
Applications
Single-phase Bridge
Three-phase Bridge
Units
18
22
A
Capacitive input filterTA = 55°C,T J = 125°C,
common heatsink of 1°C/W
Major Ratings and Characteristics
Characteristics
IT(AV)
Sinusoidal
Package Outline
25TTS..FP Units
16
A
waveform
IRMS
25
A
up to 1600
V
300
A
1.25
V
dv/dt
500
V/µs
di/dt
150
A/µs
- 40 to 125
°C
VRRM/ VDRM
ITSM
VT
@ 16 A, TJ = 25°C
T
J
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TO-220 FULLPAK
1
25TTS..FP SAFEIR Series
Bulletin I2135 rev. D 03/99
Voltage Ratings
VRRM, maximum
VDRM , maximum
IRRM/IDRM
peak reverse voltage
peak direct voltage
125°C
V
V
mA
25TTS08FP
800
800
10
25TTS12FP
1200
1200
25TTS16FP
1600
1600
Part Number
Absolute Maximum Ratings
Parameters
Max. Average On-state Current
16
IRMS
Max. RMS On-state Current
25
ITSM
Max.Peak One Cycle Non-Repetitive
300
A
Surge Current
350
Max. I2t for fusing
450
10ms Sine pulse, no voltage reapplied
I √t
Max. I √t for fusing
6300
VTM
Max. On-state Voltage Drop
1.25
V
rt
On-state slope resistance
12.0
mΩ
VT(TO) Threshold Voltage
1.0
V
IRM/IDM Max.Reverse and Direct
0.5
mA
Leakage Current
10
A 2s
630
IH
IL
2
Holding Current
10ms Sine pulse, rated VRRMapplied
10ms Sine pulse, no voltage reapplied
A √s
2
t = 0.1 to 10ms, no voltage reapplied
@ 16A, TJ = 25°C
TJ = 125°C
TJ = 25 °C
TJ = 125 °C
Typ.
Max.
--
100
100
150
VR = rated VRRM/ VDRM
Anode Supply = 6V, Resistive load, Initial I T=1A
mA
25TTS08FP, 25TTS12FP
25TTS16FP
200
mA
dv/dt Max. Rate of Rise of off-state Voltage
500
V/µs
di/dt Max. Rate of Rise of turned-on Current
150
A/µs
2
Max. Latching Current
@ TC = 85° C, 180° conduction half sine wave
10ms Sine pulse, rated VRRMapplied
I2t
2
Conditions
25TTS..FP Units
IT(AV)
Anode Supply = 6V, Resistive load
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25TTS..FP SAFEIR Series
Bulletin I2135 rev. D 03/99
Triggering
Parameters
PGM
8.0
W
PG(AV) Max. average Gate Power
2.0
+ IGM Max. paek positive Gate Current
1.5
A
- VGM Max. paek negative Gate Voltage
10
V
IGT
60
mA
Max. required DC Gate Current
to trigger
VGT
Conditions
25TTS..FP Units
Max. peak Gate Power
Max. required DC Gate Voltage
45
Anode supply = 6V, resistive load, TJ = 25°C
20
Anode supply = 6V, resistive load, TJ = 125°C
2.5
to trigger
Anode supply = 6V, resistive load, TJ = - 10°C
V
Anode supply = 6V, resistive load, TJ = - 10°C
2.0
Anode supply = 6V, resistive load, TJ = 25°C
1.0
Anode supply = 6V, resistive load, TJ = 125°C
VGD
Max. DC Gate Voltage not to trigger
0.25
IGD
Max. DC Gate Current not to trigger
2.0
TJ = 125°C, VDRM = rated value
mA
TJ = 125°C, VDRM = rated value
Switching
Parameters
Conditions
25TTS..FP Units
tgt
Typical turn-on time
trr
Typical reverse recovery time
tq
Typical turn-off time
0.9
µs
4
TJ = 25°C
TJ = 125°C
110
Thermal-Mechanical Specifications
Parameters
Conditions
25TTS..FP Units
TJ
Max. Junction Temperature Range
- 40 to 125
T stg
Max. Storage Temperature Range
- 40 to 125
RthJC Max. Thermal Resistance Junction
1.5
to Case
RthJA Max. Thermal Resistance Junction
62
°C
°C/W
DC operation
to Ambient
RthCS Typ. Thermal Resistance Case
to Heatsink
wt
Approximate Weight
T
Mounting Torque
Case Style
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1.5
Mounting surface, smooth and greased
2 (0.07)
g (oz.)
Min.
6 (5)
Max.
12 (10)
Kg-cm
(Ibf-in)
TO-220 FULLPAK
(94/V0)
3
25TTS..FP SAFEIR Series
130
25TTS.. Series
R thJC (DC) = 1.5 °C/W
120
110
Conduction Angle
100
30°
90
60°
90°
120°
180°
80
70
0
5
10
15
20
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
Bulletin I2135 rev. D 03/99
130
25TTS.. Series
R thJC (DC) = 1.5 °C/W
120
110
Conduction Period
100
90
30°
80
0
5
Maximum Average On-state Power Loss (W)
Maximum Average On-state Power Loss (W)
180°
120°
90°
60°
30°
RMS Limit
10
Conduction Angle
25TTS.. Series
T J = 125°C
0
0
4
8
12
16
25
200
25TTS.. Series
150
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
4
30
20
RMS Limit
15
Conduction Period
10
25TTS.. Series
T J = 125°C
5
0
0
5
10
15
20
25
30
Fig. 4 - On-state Power Loss Characteristics
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
250
10
25
Average On-state Current (A)
At Any Rated Load Condition And With
Rated V RRM Applied Following Surge.
Initial T J = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1
20
DC
180°
120°
90°
60°
30°
30
20
Fig. 3 - On-state Power Loss Characteristics
300
15
35
Average On-state Current (A)
350
10
Fig. 2 - Current Rating Characteristics
25
5
DC
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
15
180°
70
Average On-state Current (A)
20
60°
90°
120°
400
350
300
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial TJ = 125°C
No Voltage Reapplied
Rated VRRM Reapplied
250
200
150
25TTS.. Series
100
0.01
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
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25TTS..FP SAFEIR Series
Bulletin I2135 rev. D 03/99
Instantaneous On-state Current (A)
1000
100
TJ = 25°C
T J= 125°C
10
25TTS.. Series
1
0
1
2
3
4
5
Instantaneous On-state Voltage (V)
Transient T hermal Impedance Z thJC (°C/W)
Fig. 7 - On-state Voltage Drop Characteristics
10
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Steady State Value
(DC Operation)
0.1
Single Pulse
25TTS.. Series
0.01
0. 0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
10
Rectangular gate pulse
a)Recommended load line for
rated di/dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30% rated di/dt: 10 V, 65 ohms
tr = 1 µs, tp >= 6 µs
(1) PGM = 40 W, tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
(a)
(b)
VGD
IGD
0.1
0.001
TJ = -10 °C
TJ = 125 °C
1
TJ = 25 °C
Instantaneous Gate Voltage (V)
100
(4)
25TTS.. Series
0.01
0.1
(3)
(2)
(1)
Frequency Limited by PG(AV)
1
10
100
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
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25TTS..FP SAFEIR Series
Bulletin I2135 rev. D 03/99
Outline Table
10.6
H OLE ø 3.4
10.4
3.1
16.4
15.4
16.0
15.8
7.1
6.7
3.7
3 .2
2.8
2.6
13.7
13.5
3.3
3.1
10°
0.9
0.7
2.54 TYP.
2.54
TYP.
0.48
0.44
2.85
2.65
1.4
1.3
1.15
TYP.
1.05
R0.7 (2 PLACES)
4.8
4.6
R 0.5
Dimensions in millimeters (and inches)
5°± 0.5°
5°± 0.5°
Ordering Information Table
Device Code
25
T
T
S
16
FP
1
2
3
4
5
6
1
-
Current Rating, RMS value
2
-
Circuit Configuration:
3
-
Package:
2
(A)
1 (K) (G) 3
T = Single Thyristor
T = TO-220AC
6
4
-
Type of Silicon:
S = Converter Grade
08 = 800V
5
-
Voltage code: Code x 100 = V RRM
12 = 1200V
6
-
TO-220 FULLPAK
16 = 1600V
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25TTS..FP SAFEIR Series
Bulletin I2135 rev. D 03/99
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Data and specifications subject to change without notice.
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