INFINEON PTMA210452FL

PTMA210452EL
PTMA210452FL
Confidential, Limited Internal Distribution
Wideband RF LDMOS Integrated Power Amplifier
45 W, 1900 – 2200 MHz
Description
PTMA210452EL
Package H-33265-8
The PTMA210452EL and PTMA210452FL are wideband, 45-watt,
2-stage, LDMOS integrated amplifiers intended for use in all typical
modulation formats from 1900 to 2200 MHz. These devices are offered
in thermally-enhanced ceramic packages with solder-friendly plating
for cool and reliable operation.
PTMA210452FL
Package H-34265-8
Features
Broadband Performance
VDD = 28 V, IDQ1 = 200 mA, IDQ1 = 400 mA,
fixture tuned for 2110 – 2140 MHz
Gain (dB)
30
Gain
•
Typical two-carrier WCDMA performance at
2140 MHz, 28 V
- Average output power = 3.2 W
- Linear Gain = 28 dB
- Efficiency = 10.5%
- IMD3 = –47 dBc
•
Typical two-tone performance, 2140 MHz, 28 V
- Output power (PEP) = 45 W at IM3 = –30 dBc
- Efficiency = 32%
•
Capable of handling 10:1 VSWR @ 28 V, 45 W
(CW) output power
•
Integrated ESD protection. Meets HBM Class 1B
(minimum), per JESD22-A114F
•
Thermally-enhanced packages, Pb-free and
RoHS compliant, with solder-friendly plating
-5
25
-10
20
-15
15
-20
10
-25
5
Designed for wide RF and modulation bandwidths
and low memory effects
0
Return Loss
Return Loss (dB)
35
•
-30
0
-35
1700 1800 1900 2000 2100 2200 2300 2400 2500
Frequency (MHz)
RF Characteristics
Two-carrier WCDMA Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ1 = 200 mA (tuned for linearity), IDQ2 = 450 mA (tuned for linearity & efficiency), POUT = 3.2 W average,
ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol
Min
Typ
Max
Unit
Input Return Loss
IRL
—
–16
–10
dB
Gain
Gps
26.5
28
—
dB
Drain Efficiency
ηD
9
10.5
—
%
Intermodulation Distortion, 2-channel WCDMA
IMD
–43
–47
—
dBc
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 06, 2009-09-01
PTMA210452EL
PTMA210452FL
Confidential, Limited Internal Distribution
RF Characteristics
Small-signal CW Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ1 = 200 mA, IDQ2 = 450 mA, POUT = 1 W, ƒ = 2140 MHz
Characteristic
Conditions
Symbol
Min
Typ
Max
Unit
Gain Flatness
1 W / 30 MHz
∆G
—
0.10
0.5
dB
—
–1
+0.6
+1
º/60 MHz
td
—
2.16
—
ns
Phase Linearity
Group Delay
ƒ = 2140 MHz
DC Characteristics
Characteristic
Conditions
Symbol
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VGS = 0 V, IDS = 10 mA
V(BR)DSS
65
—
—
V
Drain Leakage Current
VDS = 28 V, V GS = 0 V
IDSS
—
—
1.0
µA
VDS = 63 V, V GS = 0 V
IDSS
—
—
10.0
µA
RDS(on)1
—
3.5
—
Ω
RDS(on)2
—
0.56
—
Ω
VGS
2.0
2.5
3.0
V
IGSS
—
—
1.0
µA
Final Stage On-state Resistance
Operating Gate Voltage
VGS = 10 V, V DS = 0.1 V
VDS = 28 V, IDQ1 = 200 mA,
IDQ2 = 450 mA
Gate Leakage Current
VGS = 10 V, V DS = 0 V
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
V
Gate-Source Voltage
VGS
–0.5 to +12
V
Junction Temperature
TJ
200
°C
Input Power
PIN
25
dBm
Total Device Dissipation
PD
135
W
0.8
W/°C
Above 25°C derate by
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (TCASE = 70°C) Stage 1
RθJC
3.5
°C/W
Stage 2
RθJC
1.3
°C/W
Data Sheet
2 of 11
Rev. 06, 2009-09-01
PTMA210452EL
PTMA210452FL
Confidential, Limited Internal Distribution
Ordering Information
Type and Version
Package Outline
Package Description
Shipping
Marking
PTMA210452EL
V1
H-33265-8
Thermally-enhanced slotted flange
Tray
PTMA210452EL
PTMA210452FL
V1
H-34265-8
Thermally-enhanced earless flange
Tray
PTMA210452FL
Typical Performance (data taken in a production test fixture)
CW Performance
Two-tone at Selected Frequencies
VDD = 28 V, IDQ1 = 200 mA, IDQ2 = 400 mA
VDD = 28 V, IDQ1 = 200 mA, IDQ2 = 430 mA
30
25
20
20
Efficiency
ƒ = 2110 MHz
ƒ = 2140 MHz
ƒ = 2170 MHz
15
10
30
32
34
36
38
40
42
44
46
-30
30
-35
25
-40
20
IMD3
15
-45
-50
10
5
0
10
-25
30
Output Power (dBm)
-55
Efficiency
0
48
IMD3 (dBc)
40
35
PAE (%)
Gain (dB)
Gain
30
ƒ = 2110 MHz
ƒ = 2140 MHz
ƒ = 2170 MHz
40
Power Added Efficiency (%)
50
35
-20
45
60
40
33
36
-60
39
42
45
Output Power, avg. (dBm)
*See Infineon distributor for future availability.
Data Sheet
3 of 11
Rev. 06, 2009-09-01
PTMA210452EL
PTMA210452FL
Confidential, Limited Internal Distribution
Typical Performance (cont.)
IS-95 at Selected Frequencies
6-Carrier TD-CDMA Modulation Spectrum
Performance
-35
20
25
ƒ = 2110 MHz
ƒ = 2140 MHz
ƒ = 2170 MHz
-40
15
-40
10
1.6 MHz
5
0
27
29
31
33
35
37
15
-50
10
-55
5
ACPR
-65
39
0
28
30
32
34
36
38
40
42
Output Power (dBm)
Output Power (dBm)
WCDMA at Selected Frequencies
Two-carrier WCDMA Performance
VDD = 28 V, IDQ1 = 200 mA, IDQ2 = 430 mA,
TM 1, 64 channel, 67% clipping
VDD = 28 V, IDQ1 = 200 mA, IDQ2 = 430 mA, ƒ =
2110 MHz, PAR = 8.5 dB, 10 MHz spacing
-25
25
-35
15
-40
ACPR
10
-45
5
-50
-55
20
30
32
34
36
38
40
15
-40
10
-45
IMD3
-50
0
42
-55
26
Output Power (dBm)
Data Sheet
-30
-35
5
0
28
Efficiency
ƒ = 2110 MHz
ƒ = 2140 MHz
ƒ = 2170 MHz
25
PAE (%)
20
-25
30
Power Added Efficiency (%)
Efficiency
ƒ = 2110 MHz
ƒ = 2140 MHz
ƒ = 2170 MHz
-30
ACPR (dBc)
20
-60
3.2 kHz
-50
-45
Efficiency
IMD3 (dBc)
-45
ACPR (dBc)
Efficiency
-35
Drain Efficiency (%)
Modulation Spectrum (dBc)
-30
Power Added Efficiency (%)
VDD = 28 V, IDQ1 = 280 mA, IDQ2 = 390 mA,
ƒ = 2017.5 MHz
VDD = 28 V, IDQ1 = 200 mA, IDQ2 = 430 mA
30
34
38
42
Output Power, avg. (dBm)
4 of 11
Rev. 06, 2009-09-01
PTMA210452EL
PTMA210452FL
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Gate – Source Voltage vs. Temperature
VDD = 27 V, IDQ1 = 110 mA, IDQ2 = 335 mA
Normalized Gate – Source
Voltage (threshold), V
1.15
1.10
1.05
1.00
Slope = –1.3 mV/°C
0.95
0.90
0.85
-30
-10
10
30
50
70
90
Temperature (°C)
Broadband Circuit Impedance
Z Source Ω
Frequency
D
Z Load
IN
S
4
5
MHz
R
jX
R
jX
1900
25.2
20.4
8.8
12.2
2110
26.1
27.8
6.1
16.5
2140
26.2
28.9
5.9
17.1
2170
26.5
30.3
5.6
17.8
2200
26.6
31.6
5.2
18.6
0.
Z0 = 50 Ω
0.
45
0.
0
Z Load Ω
Z Load
2200 MHz
Z Source
0.
3
RAT
O
1900 MHz
1900 MHz
A RD
GE N
E
0. 2
R -->
2200 MHz
Data Sheet
5 of 11
Rev. 06, 2009-09-01
PTMA210452EL
PTMA210452FL
Confidential, Limited Internal Distribution
Reference Circuit — for evaluation only
VD1
VD2
C2
10µF
C1
100µF
50V
C3
1µF
C4
0.1µF
C5
12pF
C19
12pF
C20
0.1µF
C21
1µF
C22
10µF
l11
C23
100µF
50V
DUT
1
2
3
RF_IN
l1
l2
C29
1.1pF
C7
1µF
C8
0.1µF
PTMA210452EL
PTMA210452FL
8
l4
l3
5
6
7
VG1
C6
10µF
4
C32
12pF
l5
C30
1.8pF
l6
l8
l7
l9
RF_OUT
C31
3pF
C9
12pF
l10
VG2
C10
10µF
C11
1µF
C12
0.1µF
C13
12pF
C24
12pF
C25
0.1µF
C26
1µF
C27
10µF
C28
100µF
50V
a 2 1 0 4 5 2 e f_
l b d _ 7 -3 1 -0 8
Reference circuit schematic for ƒ = 2140 MHz
Circuit Assembly Information
DUT
PCB
PTMA210452EL or PTMA210452FL
0.76 mm [.030"] thick, εr = 3.48
LDMOS IC
Rogers RO4350
1 oz. copper
Microstrip
Electrical Characteristics at 2140 MHz
Dimensions: L x W (mm)
Dimensions: L x W (in.)
l1
l2
l3
l4
l5
l6
l7
l8
l9
l10, l11
Data Sheet
0.129
0.114
0.040
0.013
0.024
0.066
0.162
0.004
0.050
0.128
λ, 49.7
λ, 49.7
λ, 10.4
λ, 10.4
λ, 34.1
λ, 34.1
λ, 43.4
λ, 49.7
λ, 49.7
λ, 61.2
Ω
Ω
Ω
Ω
Ω
Ω
Ω
Ω
Ω
Ω
11.00 x 1.70
9.68 x 1.70
3.10 x 13.00
1.02 x 13.00
2.01 x 3.00
5.46 x 3.00
13.67 x 2.11
0.38 x 1.70
4.24 x 1.70
11.00 x 1.19
6 of 11
0.433
0.381
0.122
0.039
0.079
0.215
0.538
0.015
0.167
0.433
x
x
x
x
x
x
x
x
x
x
0.067
0.067
0.512
0.512
0.118
0.118
0.083
0.067
0.067
0.047
Rev. 06, 2009-09-01
PTMA210452EL
PTMA210452FL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
VD1
V D2
C1
C23
C22
C21
C20
C19
C2
C3
C4
C29
RF_IN
C30
C5
C9
C8
C11
RF_OUT
C32
C13
C12
C31
C7
C24
C25 C26
C6
C10
VG1
C27
V G2
C28
VD2
a 2 1 0 4 5 2 e f _
l c d _ 4 - 3 0 - 0 8
Reference circuit assembly diagram (not to scale)*
Component
Component
Description
Description
Suggested
Manufacturer
P/N or Comment
P/N or Comment
C1, C23, C28
C2, C6, C10, C22, C27
C3, C7, C11, C21, C26
C4, C8, C12, C20, C25
C5, C9, C13, C19, C24, C32
C29
C30
C31
Not used
Electrolytic capacitor 100 µF, 50 V
Ceramic capacitor 10 µF
Ceramic capacitor 1 µF
Capacitor, 0.1 µF
Ceramic capacitor 12 pF
Ceramic capacitor 1.1 pF
Ceramic capacitor 1.8 pF
Ceramic capacitor 3 pF
C14, C15, C16, C17, C18
Digi-Key
Murata
Digi-Key
Digi-Key
ATC
ATC
ATC
ATC
PCE3718CT-ND
GRM422Y5V106Z050AL
445-1411-2-ND
399-1267-2-ND
600S120JT
600S1R1BT
600S1R8BT
600S3R0BT
*Gerber Files for this circuit available on request
Data Sheet
7 of 11
Rev. 06, 2009-09-01
PTMA210452EL
PTMA210452FL
Confidential, Limited Internal Distribution
Package Specifications
Package H-33265-8 Outline
15.24
[.600]
7.11
[.280]
(45° X 2.03 [.08])
4X R 0.13 [.05] MAX
LID
C
L
2.54±0.51
[.100±.020]
8
10.16 [.400]
WINDOW FRAME & LID
C
L
1 2 3
4
15.24±0.51
[.600±.020]
5 6 7
4X R 0.63 [.025] MAX
WINDOW FRAME
2X 4.57
[.180]
9.78 [.385]
FLANGE
6X 0.406
[.016]
2X R1.59
[R.063]
0.76
[.030]
4X R1.52
[R.060]
2X 3.48
[.137]
2X 2.21
[.087]
9.55
[.376]
REF
10.16
[.400]
C
L
SPH 1.57
[.062]
1.02
[.040]
0.038 [.0015] -Ah-33+34265_POs_33265-8_0801
3.68±.38
[.145±.015]
20.32
[.800]
S
Diagram Notes—unless otherwise specified:
1.
Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Pins: S = source; see page 10 for complete list and diagram.
Data Sheet
3.
Lead thickness: 0.127 ± 0.025 [0.005 ± 0.001].
4.
Gold plating less than 0.25 micron [10 microinch].
5.
All tolerances ± 0.127 [0.005] unless specified otherwise.
6.
Primary dimensions are inches, alternate dimensions are mm.
8 of 11
Rev. 06, 2009-09-01
PTMA210452EL
PTMA210452FL
Confidential, Limited Internal Distribution
Package Specifications (cont.)
Package H-34265-8 Outline
7.11
[.280]
C
L
(45° X 2.03 [.08])
2.54±0.51
[.100±.020]
4X R 0.13 [.05] MAX
LID
8
10.16 [.400] SQ
FLANGE & LID
CL
1 2 3
4
15.24±0.51
[.600±.020]
5 6 7
4X R 0.63 [.025] MAX
FLANGE
6X 0.406
[.016]
0.76
[.030]
2X 4.57
[.180]
2X 3.48
[.137]
2X 2.21
[.087]
9.55
[.376]
REF
10.16
[.400]
C
L
SPH 1.57
[.062]
1.02
[.040]
0.038 [.0015] -Ah-33+34265_POs_34265-8_0801
3.68±.38
[.145±.015]
10.16
[.400]
S
Diagram Notes—unless otherwise specified:
1.
Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Pins: S = source; see page 10 for complete list and diagram.
Data Sheet
3.
Lead thickness: 0.127 ± 0.025 [0.005 ± 0.001].
4.
Gold plating less than 0.25 micron [10 microinch].
5.
All tolerances ± 0.127 [0.005] unless specified otherwise.
6.
Primary dimensions are inches, alternate dimensions are mm.
9 of 11
Rev. 06, 2009-09-01
PTMA210452EL
PTMA210452FL
Confidential, Limited Internal Distribution
Package Specifications (cont.)
Package H-3X265-8 Pinout
1
2
3
4
8
5
6
Pin #
Function
S(Flange)
1
2
3
4
5
6
7
Source
VD1
VG1 Thermal FET
VG1
RF In
VG1
VG2
VG2 Thermal FET
7
a210452 e f l P D p i n o u t 2008 10 07
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
10 of 11
Rev. 06, 2009-09-01
PTMA210452EL/FL V1
Confidential, Limited Internal Distribution
Revision History:
2009-09-01
2009-01-30, Data Sheet
Previous Version:
Data Sheet
Page
Subjects (major changes since last revision)
1
updated features and revised VSWR rating
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
[email protected]
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2009-09-01
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding
the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
11 of 11
Rev. 06, 2009-09-01