PTFA142401EL PTFA142401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 240 W, 1450 – 1500 MHz Description The PTFA142401EL and PTFA142401FL are 240-watt LDMOS FETs designed for DVB and DAB applications in the 1450 to 1500 MHz frequency band. Features include internal I/O matching and thermallyenhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. 40 -25 Efficiency -30 30 -35 20 ACPR Low 10 Drain Efficiency (%) Adjacent Channel Power Ratio (dB) VDD = 30 V, IDQ = 2000 mA, ƒ = 1475 MHz, DVB-T signal, PAR = 9.65 dB at 0.01%, 8 MHz BW ACPR = 1475+/-4.3 MHz delta marker, 30 kHz RBW ACPR Hi 0 -45 42 43 44 45 46 47 PTFA142401FL Package H-34288-2 Features DVB-T Drive-up -40 PTFA142401EL Package H-33288-2 48 49 Average Output Power (dBm) • Pb-free, RoHS-compliant and thermally-enhanced packages with less than 0.25 micron Au plating • Broadband internal matching • Typical DVB-T performance at 1475 MHz, 30 V - Average output power = 47.0 dBm - Linear Gain = 16.0 dB - Efficiency = 27.5% - Adjacent channel power = –32 dBc • Typical CW performance, 1475 MHz, 30 V - Output power at P–1dB = 240 W - Efficiency = 52% • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR @ 30 V, 200 W (CW) output power RF Characteristics DVB-T Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 30 V, IDQ = 2.0 A, POUT = 50 W average ƒ = 1475 MHz DVB-T, channel bandwidth = 8.0 MHz , peak/average = 9.65 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps — 16.5 — dB Drain Efficiency ηD — 27.5 — % ACPR — –32 — dBc Adjacent Channel Power Ratio (±4.3 MHz offset, 30 kHz RBW) All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 10 Rev. 04, 2009-07-16 PTFA142401EL PTFA142401FL Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 2.0 A, POUT = 240 W PEP, ƒ = 1500 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 15.0 16.0 — dB Drain Efficiency ηD 40 43 — % Intermodulation Distortion IMD — –31 –29 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — — 1.0 µA Drain Leakage Current VDS = 63 V, V GS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, V DS = 0.1 V RDS(on) — 0.05 — Ω Operating Gate Voltage VDS = 30 V, IDQ = 2.0 A VGS 2.0 2.5 3.0 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 625 W 3.57 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 240 W CW) RθJC 0.28 °C/W Ordering Information Type and Version Package Outline Package Description Shipping Marking PTFA142401EL V4 H-33288-2 Thermally-enhanced, slotted flange, single-ended Tray PTFA142401EL PTFA142401FL V4 H-34288-2 Thermally-enhanced, earless flange, single-ended Tray PTFA142401FL *See Infineon distributor for future availability. Data Sheet 2 of 10 Rev. 04, 2009-07-16 PTFA142401EL PTFA142401FL Confidential, Limited Internal Distribution Typical Performance (data taken in an Infineon test fixture) Two-tone Drive-up Power Sweep, CW Conditions VDD = 30 V, IDQ = 2000 mA, ƒ = 1475 MHz, tone spacing = 1 MHz VDD = 30 V, IDQ = 2000 mA, ƒ = 1475 MHz 45 Efficiency 35 IM5 IM3 30 -45 25 IM7 -50 20 -55 15 -60 10 -65 16 5 45 47 49 51 53 50 Gain 15 40 Efficiency 14 30 13 20 12 55 0 40 Output Power, PEP (dBm) 160 200 240 10 280 Output Power (W) Broadband Performance Pulsed CW Characteristics VDD = 30 V, IDQ = 1800 mA, ƒ = 1475 MHz 10 µs pulse time, 10% duty cycle Return Loss 59 -5 57 30 -10 25 -15 Efficiency 20 15 10 1400 -20 -25 Gain 1430 1460 1490 1520 Output Power (dBm) 35 0 Input Return Loss (dB) Gain (dB), Efficiency (%) 120 VDD = 30 V, IDQ = 2000 mA, POUT = 50 W 40 Ideal P OUT 55 53 Measured POUT 51 49 47 -30 1550 30 32 34 36 38 40 42 Input Power (dBm) Frequency (MHz) Data Sheet 80 Drain Efficiency (%) -35 -40 60 40 Gain (dB) -30 17 Drain Efficiency (%) Intermodulation Distortion (dBc) -25 3 of 10 Rev. 04, 2009-07-16 PTFA142401EL PTFA142401FL Confidential, Limited Internal Distribution Typical Performance (cont.) CW Power Sweep (P–1dB) VDD = 30 V, ƒ = 1500 MHz VDD = 30 V, IDQ = 1.8 A, ƒ = 1500 MHz 18 Drain Efficiency 17 16.5 60 50 Gain Gain (dB) Power Gain (dB) 17.0 IDQ = 1800 mA 16.0 IDQ = 1500 mA IDQ = 1200 mA IDQ = 600 mA 15.5 16 40 15 30 TCASE = 25°C 14 IDQ = 900 mA 15.0 20 TCASE = 90°C 13 0 40 80 120 160 200 240 0 40 80 120 160 200 240 Drain Efficiency (%) Gain vs. Output Power 10 280 Output Power (W) Output Power (W) Bias Voltage vs. Temperature Voltage normalized to typical gate voltage, series show current Normalized Bias Voltage (V) 2.33 A 1.03 1.03 4.65 A 6.99 A 1.02 1.02 1.01 1.01 9.33 A 11.64 A 13.98 A 16.32 A 1.00 1.00 0.99 0.99 0.98 0.98 -20 18.66 A 21.00 A 0 20 40 60 80 100 Case Temperature (°C) Data Sheet 4 of 10 Rev. 04, 2009-07-16 PTFA142401EL PTFA142401FL Confidential, Limited Internal Distribution S Z Source Ω Frequency MHz R jX Z Load Ω R jX 1450 2.3 –6.4 1.2 –1.4 1463 2.3 –6.2 1.2 –1.3 1475 2.2 –6.0 1.2 –1.2 1488 2.2 –5.8 1.2 –1.2 1500 2.1 –5.7 1.2 –1.1 0.2 Z Load 0.1 G 0.0 Z Load W ARD LOA D T HS T O L E NG Z Source 1500 MHz 1450 MHz Z Source 0.1 1500 MHz 1450 MHz E W AV <--- D Z0 = 50 Ω 0 .1 - W AV E LE NGT H S T OW A RD G E Broadband Circuit Impedance 0. 2 See next page for circuit information Data Sheet 5 of 10 Rev. 04, 2009-07-16 PTFA142401EL PTFA142401FL Confidential, Limited Internal Distribution Reference Circuit C1 0.001µF R1 1.2K V QQ1 LM7805 VDD Q1 BCP56 C2 0.001µF R3 2K V C3 0.001µF R4 2K V R5 10 V C4 10µF 35V R6 10 V C5 0.1µF L1 R7 5.1K V VDD C6 7.5pF C9 13pF C21 1.7pF C7 33pF l1 C12 100µF 50V C14 10µF 35V C23 33pF DUT l2 C13 0.1µF l7 l6 J1 C11 1µF C10 1µF l3 l4 l9 l5 C8 4.5pF l 10 l 11 l 12 l8 J2 l14 l 13 C24 1.7pF C22 1.7pF V66100-G9259-D331-01-7606.dwg R2 1.3K V L2 C15 13pF C16 1µF C17 1µF C18 100µF 50V C19 0.1µF C20 10µF 35V Reference circuit schematic for ƒ = 1475 MHz Circuit Assembly Information DUT PTFA142401EL or PTFA142401FL PCB 0.76 mm [.030"] thick, εr = 4.5 LDMOS Transistor TMM4 2 oz. copper Microstrip Dimensions: L x W ( mm) Dimensions: L x W (in.) l1 l2 l3 l4 l5 l6 l7, l8 l9 l10 l11 l12 l13 l14 Data Sheet Electrical Characteristics at 1475 MHz 0.038 λ, 53.1, Ω 0.108 λ, 47.5, Ω 0.014 λ, 47.5, Ω 0.012 λ, 16.3, Ω 0.051 λ, 8.9, Ω 0.171 λ, 66.9, Ω 0.177 λ, 60.0, Ω 0.049 λ, 5.0, Ω 0.065 λ, 5.0, Ω 0.059 λ, 10.6, Ω 0.006 λ, 53.1, Ω 0.011 λ, 53.1, Ω 0.046 λ, 53.1, Ω 4.17 x 1.52 11.86 x 1.91 1.57 x 1.91 1.22 x 7.62 5.08 x 15.24 19.10 x 1.02 19.66 x 1.27 4.80 x 27.94 6.38 x 27.94 5.97 x 12.70 0.71 x 1.52 1.19 x 1.52 5.05 x 1.52 6 of 10 0.164 0.467 0.062 0.048 0.200 0.752 0.774 0.189 0.251 0.235 0.028 0.047 0.199 x x x x x x x x x x x x x 0.060 0.075 0.075 0.300 0.600 0.040 0.050 1.100 1.100 0.500 0.060 0.060 0.060 Rev. 04, 2009-07-16 PTFA142401EL PTFA142401FL Confidential, Limited Internal Distribution Reference Circuit (cont.) GND R5 C5 R4 C4 R6 C6 R3 QQ1 C1 C3 C9 C11 C10 C2 R1 R2 C12 Q1 R7 VDD C21 C14 C24 RF_IN C7 L1 C13 RF_OUT C23 C8 C19 C22 C20 C18 L2 C17 C15 V66100-G9259-D331-01-7631.dwg C16 Reference circuit assembly diagram * (not to scale) Component Description Suggested Manufacturer P/N or Comment C1, C2, C3 C4, C14, C20 C5, C13, C19 C6 C7, C23 C8 C9, C15 C10, C11, C16, C17 C12, C18 C21, C22, C24 L1, L2 Q1 QQ1 R1 R2 R3 R4 R5, R7 R6 Capacitor, 0.001 µF Tantalum capacitor, 10 µF, 35 V Capacitor, 0.1 µF Ceramic capacitor, 7.5 pF Ceramic capacitor, 33 pF Ceramic capacitor, 4.5 pF Ceramic capacitor, 13 pF Capacitor, 1 µF Electrolytic capacitor, 100 µF, 50 V Ceramic capacitor, 1.7 pF Ferrite, 8.9 mm Transistor Voltage regulator Chip resistor, 1.2k ohms Chip resistor, 1.3k ohms Chip resistor, 2k ohms Potentiometer, 2k ohms Chip resistor, 5.1k ohms Chip resistor, 10 ohms Digi-Key Digi-Key Digi-Key ATC ATC ATC ATC ATC Digi-Key ATC Elna Magnetics Infineon Technologies National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key PCC1772CT-ND 399-1655-2-ND PCC104BCT-ND 100B 7R5 100B 330 100B 4R5 100B 130 920C105 PCE3718CT-ND 100B 1R7 BDS 4.6/3/8.9-4S2 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2KECT-ND 3224W-202ETR-ND P5.1KECT-ND P10ECT-ND *Gerber Files for this circuit available on request Data Sheet 7 of 10 Rev. 04, 2009-07-16 PTFA142401EL PTFA142401FL Confidential, Limited Internal Distribution Package Outline Specifications Package H-33288-2 C66065-A0003-C723-01-0027 H-33288-2.dwg Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D = drain, S = source, G = gate. 5. Lead thickness: 0.102 +0.051/–0.025 [.004 +.002/–.001]. 6. Gold plating less than 0.25 micron [10 microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 8 of 10 Rev. 04, 2009-07-16 PTFA142401EL PTFA142401FL Confidential, Limited Internal Distribution Package Outline Specifications (cont.) Package H-34288-2 C66065-A0003-C724-01-0027 H-34288-2.dwg Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D = drain, S = source, G = gate. 5. Lead thickness: 0.102 +0.051/–0.025 [.004 +.002/–.001]. 6. Gold plating less than 0.25 micron [10 microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 9 of 10 Rev. 04, 2009-07-16 PTFA142401EL/FL V4 Confidential, Limited Internal Distribution Revision History: 2009-07-16 2009-03-31, Data Sheet Previous Version: Page 6, 7 Data Sheet Subjects (major changes since last revision) Fixed typing error We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International GOLDMOS® is a registered trademark of Infineon Technologies AG. Edition 2009-07-16 Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 10 of 10 Rev. 04, 2009-07-16