PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501E and PTFA041501F are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications. They are available in thermally-enhanced ceramic open-cavity packages . Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. VDD = 28 V, IDQ = 900 mA, ƒ = 470 MHz • Broadband internal matching • Typical CDMA performance at 470 MHz, 28 V - Average output power = 60 W - Linear Gain = 21 dB - Efficiency = 41% • Typical CW performance, 470 MHz, 28 V - Output power at P–1dB = 175 W - Efficiency = 62% • Integrated ESD protection: Human Body Model, Class 1 (minimum) • Excellent thermal stability • Low HCI drift • Capable of handling 10:1 VSWR @ 28 V, 150 W (CW) output power • Pb-free and RoHS-compliant 45 -30 Efficiency –15°C 25°C 90°C -35 -40 40 35 30 -45 25 -50 -55 20 ACPR 15 -60 10 ALT -65 -70 5 -75 0 36 38 40 42 44 46 Drain Efficiency (%) Adjacent Channel Power Ratio (dB) PTFA041501F Package H-37248-2 Features Single-carrier CDMA IS-95 Performance -25 PTFA041501E Package H-36248-2 48 Average Output Power (dBm) RF Characteristics Single-carrier CDMA IS-95 Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 900 mA, POUT = 60 W average, ƒ = 470 MHz Characteristic Symbol Min Typ Max Unit Gain Gps — 21 — dB Drain Efficiency ηD — 41 — % ACPR — –33 — dB Adjacent Channel Power Ratio All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 11 Rev. 01.1, 2010-01-20 PTFA041501E PTFA041501F Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 900 mA, POUT = 150 W PEP, ƒ = 470 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 20.0 21.0 — dB Drain Efficiency ηD 45.0 46.5 — % Intermodulation Distortion IMD — –29 –28 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — — 1.0 µA On-State Resistance VGS = 10 V, V DS = 0.1 V RDS(on) — 0.07 — Ω Operating Gate Voltage VDS = 28 V, IDQ = 900 mA VGS 2 2.48 3 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 150 W CW) RθJC 0.42 °C/W Ordering Information Type and Version Package Type Package Description Shipping PTFA041501E V4 H-36248-2 Thermally-enhanced slotted flange, single-ended Tray PTFA041501E V4 R250 H-36248-2 Thermally-enhanced slotted flange, single-ended Tape & Reel, 250 pcs PTFA041501F V4 H-37248-2 Thermally-enhanced earless flange, single-ended Tray PTFA041501F V4 R250 H-37248-2 Thermally-enhanced earless flange, single-ended Tape & Reel, 250 pcs *See Infineon distributor for future availability. Data Sheet 2 of 11 Rev. 01.1, 2010-01-20 PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Typical Performance (data taken in a production test fixture) Broadband Circuit Performance P OUT, Gain & Efficiency (at P-1dB) vs. Frequency VDD = 28 V, IDQ = 900 mA, POUT = 80 W -15 40 Return Loss -16 -17 30 25 -18 Gain -19 20 15 460 462 464 466 -20 470 468 20.9 60 20.7 50 45 20.4 35 20.3 30 20.2 Gain 25 20.1 20 20 15 460 462 464 466 19.9 470 468 Power Sweep at selected IDQ Power Sweep, CW Conditions VDD = 28 V, ƒ = 470 MHz VDD = 28 V, IDQ = 900 mA, ƒ = 470 MHz 21.5 21.0 20.5 IDQ = 1125 mA 20.0 19.5 Gain (dB) Gain (dB) 20.5 40 Frequency (MHz) 22.0 IDQ = 900 mA 19.0 22 80 21 70 20 60 Gain 19 18 50 40 Efficiency 17 IDQ = 675 mA 18.0 20.6 Output Power Frequency (MHz) 18.5 20.8 Efficiency 55 30 TCASE = 25°C TCASE = 90°C 16 17.5 17.0 20 15 39 41 43 45 47 49 51 53 55 Data Sheet 10 39 Output Power (dBm) Drain Efficiency (%) 35 Efficiency (%), Output Power (dBm) -14 Efficiency Input Return Loss (dB) 45 65 Gain (dB) -13 50 Gain (dB), Efficiency (%) VDD = 28 V, IDQ = 900 mA 41 43 45 47 49 51 53 55 Output Power (dBm) 3 of 11 Rev. 01.1, 2010-01-20 PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Typical Performance (cont.) Intermodulation Distortion vs. Output Power IM3 vs. Output Power at Selected Biases VDD = 28 V, IDQ = 900 mA, VDD = 28 V , ƒ1 = 469 MHz, ƒ 2 = 470 MHz ƒ 1 = 469 MHz, ƒ 2 = 470 MHz -20 -25 45 -27 40 IM3 35 -30 30 -40 25 IM5 -50 20 -60 IM7 -70 36 38 40 42 44 46 48 -29 IMD (dBc) Efficiency -10 50 Drain Efficiency (%) Intermodulation Distortion (dBc) 0 675 mA -31 -33 900 mA -35 -37 -39 15 -41 10 -43 1125 mA 36 50 38 Output Power (dBm), avg. 42 44 46 48 Bias Voltage vs. Temperature Voltage normalized to typical gate voltage, series show current IDQ = 900 mA, ƒ = 470 MHz 55 0.29 A Normalized Bias Voltage (V) 1.03 54 53 52 51 50 24 26 28 30 0.88 A 1.02 1.47 A 1.01 2.20 A 1.00 4.41 A 0.99 6.61 A 8.81 A 0.98 11.02 A 0.97 0.96 0.95 -20 32 0 20 40 60 80 100 Case Temperature (°C) Supply Voltage (V) Data Sheet 50 Output Power (dBm) Output Power (at 1 dB compression) vs. Supply Voltage Output Power (dBm) 40 4 of 11 Rev. 01.1, 2010-01-20 PTFA041501E PTFA041501F Confidential, Limited Internal Distribution RD G Broadband Circuit Impedance S T OW A Z Source Ω Frequency Z Load Ω MHz R jX R jX 450 0.88 –3.20 1.33 0.22 455 0.84 –3.20 1.35 0.31 460 0.84 –3.10 1.40 0.38 465 0.84 –3.00 1.41 0.47 470 0.83 –2.90 1.44 0.57 0.2 0.1 0.0 470 MHz 450 MHz Z Source 470 MHz 450 MHz 0.1 <--- S Z Load D L OA D S T OW AR NGT H G EL E WAV Z Load - W AV E LE NGTH Z Source Z0 = 50 Ω 0.1 D See next page for circuit information Data Sheet 5 of 11 Rev. 01.1, 2010-01-20 PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Reference Circuit C1 0.001µF R2 1.3K V R6 1.2K V QQ1 LM7805 VDD Q1 BCP56 C2 0.001µF R3 2K V C3 0.001µF R4 2K V R5 3.3K V C4 10µF 35V R6 10 V C5 0.1µF L1 VDD R7 5.1K V C6 120pF C11 1µF C10 100pF C12 10µF 50V l7 C13 0.1µF 50V C14 10µF 50V l4 C8 11pF C7 100pF J1 l1 l2 l3 l6 DUT l5 C9 4.3pF l10 l8 C20 5.6pF C22 11pF l11 l12 C21 5.1pF C23 11pF C25 100pF l13 J2 l14 C24 8.2pF l9 L2 C15 100pF C16 1µF C17 10µF 50V C18 0.1µF 50V C19 10µF 50V V66000-G9267-D631-01-7606.dwg Reference circuit schematic for ƒ = 460 MHz Circuit Assembly Information DUT PCB PTFA041501E or PTFA041501F LTN/PTFA041501EF Microstrip Electrical Characteristics at 460 MHz 1 l1 l2 l3 l4 l5 l6 l7 l8 l9 l 10 l 11 l 12 l 13 l 14 Data Sheet 0.016 0.058 0.097 0.081 0.040 0.158 0.030 0.158 0.030 0.025 0.105 0.006 0.104 0.014 LDMOS Transistor 0.76 mm [.030"] thick, εr = 9.2 Rogers TMM10 Dimensions L x W (mm) λ, 50.69 Ω λ, 24.34 Ω λ, 4.85 Ω λ, 50.69 Ω λ, 4.85 Ω λ, 37.73 Ω λ, 10.94 Ω λ, 37.73 Ω λ, 10.94 Ω λ, 5.58 Ω λ, 5.58 Ω λ, 5.58 Ω λ, 21.37 Ω λ, 50.69 Ω 4.32 x 0.71 14.22 x 2.54 21.59 x 17.78 21.59 x 0.71 8.89 x 17.78 40.64 x 1.27 5.59 x 7.11 40.64 x 1.27 5.59 x 7.11 5.59 x 15.24 23.62 x 15.24 1.27 x 15.24 25.4 x 3.05 3.81 x 0.71 6 of 11 2 oz. copper Dimensions L x W (in.) 0.170 0.560 0.850 0.850 0.350 1.600 0.220 1.600 0.220 0.220 0.930 0.050 1.000 0.150 x x x x x x x x x x x x x x 0.028 0.100 0.700 0.280 0.700 0.050 0.280 0.050 0.280 0.600 0.600 0.600 0.120 0.028 Rev. 01.1, 2010-01-20 PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Reference Circuit (cont.) GND R5 R4 C4 C14 C12 C3 R3 C2 R2 C5 C6 QQ1 C1 VDD R6 R7 L1 R1 C10 Q1 C8 C20 C22 C13 C11 C24 C25 RF IN RF OUT C7 C21 C9 C23 C15 C16 C18 L2 041501in_03 041501out_03 C17 C19 V66100-G9267-D631-01-7631.dwg R5 R4 QQ1 C1 C4 C3 R3 C2 R2 C5 R6 R7 R1 Q1 C8 Reference circuit assembly diagram (not to scale). Gerber files for this circuit available on request. Data Sheet 7 of 11 Rev. 01.1, 2010-01-20 PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Reference Circuit (cont.) Component Description Suggested Manufacturer P/N or Comment C1, C2, C3 C4 C5, C13, C18 C6 C7, C10, C15, C25 C8, C22, C23 C9 C11, C16 C12, C14, C17, C19 C20 C21 C24 L1, L2 Q1 QQ1 R1 R2 R3 R4 R5 R6 R7 Capacitor, 0.001 µF Tantalum capacitor, 10 µF, 35 V Capacitor, 0.1 µF Ceramic capacitor, 120 pF Ceramic capacitor, 100 pF Ceramic capacitor, 11 pF Ceramic capacitor, 4.3 pF Capacitor, 1.0 µF Capacitor, 10 µF, 50 V Ceramic capacitor, 5.6 pF Ceramic capacitor, 5.1 pF Ceramic capacitor, 8.2 pF Ferrite, 6 mm Transistor Voltage regulator Chip resistor, 1.2k ohms Chip resistor, 1.3k ohms Chip resistor, 2k ohms Potentiometer, 2k ohms Chip resistor, 3.3k ohms Chip resistor, 10 ohms Chip resistor, 5.1k ohms Digi-Key Digi-Key Digi-Key ATC ATC ATC ATC ATC Garrett Electronics ATC ATC ATC Ferroxcube Infineon Technologies National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key PCC1772CT-ND PCS6106TR-ND P4525-ND 100B 121 100B 101 100B 110 100B 4R3 920C105 TPS106K050R0400 100B 5R6 100B 5R1 100B 8R2 53/3/4.6-452 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2.0KECT-ND 3224W-202ETR-ND P3.3KECT-ND P10ECT-ND P5.1KECT-ND Data Sheet 8 of 11 Rev. 01.1, 2010-01-20 PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Package Outline Specifications Package H-36248-2 (45° X 2.72 [.107]) CL 4.83±0.51 [.190±.020] D FLANGE 9.78 [.385] LID 9.40 +0.10 19.43 ±0.51 [.765±.020] –0.15 [.370 +.004 –.006 ] S C L G 2X 12.70 [.500] 2X R1.63 [R.064] 4X R1.52 [R.060] 27.94 [1.100] 19.81±0.20 [.780±.008] 1.02 [.040] C L SPH 1.57 [.062] 3.61±0.38 [.142±.015] 0.0381 [.0015] -A34.04 [1.340] 0 7 1 1 1 7 _ h -3 6 2 4 8 -2 _ p o Diagram Notes—unless otherwise specified: Data Sheet 1. Lead thickness: 0.102 +0.051/–0.025 [.004 +.002/–.001]. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch] 9 of 11 Rev. 01.1, 2010-01-20 PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Package Outline Specifications (cont.) Package H-37248-2 ( 45° X 2.72 [.107]) CL 4.83±0.51 [.190±.020] D +0.10 LID 9.40 –0.15 [.370+.004 –.006 ] FLANGE 9.78 [.385] C L 19.43±0.51 [.765±.020] G 4X R0.508+0.381 –0.127 [R.020+.015 – .005] 2X 12.70 [.500] 19.81±0.20 [.780±.008] C L SPH 1.57 [.062] 1.02 [.040] 0.0381 [.0015] -A- S 0 7 1 1 1 7 _ h -3 7 2 4 8 -2 _ p o 3.61±0.38 [.142±.015] 20.57 [.810] Diagram Notes—unless otherwise specified: 1. Lead thickness: 0.102 +0.051/–0.025 [.004 +.002/–.001]. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 10 of 11 Rev. 01.1, 2010-01-20 PTFA041501EF V4 Confidential, Limited Internal Distribution Revision History: 2010-01-20 none Previous Version: Data Sheet Page Subjects (major changes since last revision) 6, 9, 10 Minor cosmetic changes only We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International GOLDMOS® is a registered trademark of Infineon Technologies AG. Edition 2010-01-20 Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 11 of 11 Rev. 01.1, 2010-01-20