PTFA041501GL PTFA041501HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501GL and PTFA041501HL are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications. They are available in thermally-enhanced plastic open-cavity packages with copper flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. • Thermally-enhanced plastic open-cavity (EPOC™) packages with copper flanges, Pb-free and RoHS compliant 45 • Broadband internal matching 40 • Typical CDMA performance at 470 MHz, 28 V - Average output power = 60 W - Linear Gain = 21 dB - Efficiency = 41% • Typical CW performance, 470 MHz, 28 V - Output power at P–1dB = 175 W - Efficiency = 62% • Integrated ESD protection: Human Body Model, Class 1 (minimum) • Excellent thermal stability • Low HCI drift • Capable of handling 10:1 VSWR @ 28 V, 150 W (CW) output power Efficiency –15°C 25°C 90°C -35 -40 35 30 -45 25 -50 20 -55 ACPR 15 -60 10 ALT -65 Drain Efficiency (%) Adjacent Channel Power Ratio (dB) VDD = 28 V, IDQ = 900 mA, ƒ = 470 MHz -30 PTFA041501HL Package PG-64248-2 Features Single-carrier CDMA IS-95 Performance -25 PTFA041501GL Package PG-63248-2 5 -70 -75 0 36 38 40 42 44 46 48 Average Output Power (dBm) RF Characteristics Single-carrier CDMA IS-95 Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 900 mA, POUT = 60 W average, ƒ = 470 MHz Characteristic Symbol Min Typ Max Unit Gain Gps — 21 — dB Drain Efficiency ηD — 41 — % ACPR — –33 — dB Adjacent Channel Power Ratio All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 11 Rev. 02, 2008-11-21 PTFA041501GL PTFA041501HL Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 900 mA, POUT = 150 W PEP, ƒ = 470 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 20.0 21.0 — dB Drain Efficiency ηD 45.0 46.5 — % Intermodulation Distortion IMD — –29 –28 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — — 1.0 µA On-State Resistance VGS = 10 V, V DS = 0.1 V RDS(on) — 0.07 — Ω Operating Gate Voltage VDS = 28 V, IDQ = 900 mA VGS 2 2.48 3 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 625 W 3.57 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 150 W CW, soldered) RθJC 0.28 °C/W Ordering Information Type and Version Package Outline Package Description Shipping Marking PTFA041501GL V1 PG-63248-2 Thermally-enhanced slotted flange, single-ended Tray PTFA041501GL PTFA041501HL V1 PG-64248-2 Thermally-enhanced slotted flange, single-ended Tray PTFA041501HL *See Infineon distributor for future availability. Data Sheet 2 of 11 Rev. 02, 2008-11-21 PTFA041501GL PTFA041501HL Confidential, Limited Internal Distribution Typical Performance (data taken in a production ) POUT, Gain & Efficiency (at P-1dB) vs. Frequency Broadband Circuit Performance VDD = 28 V, IDQ = 900 mA, P–1dB 45 -14 Efficiency 40 -15 35 -16 Return Loss 30 -17 -18 Gain 20 60 55 462 464 466 45 20.5 40 20.4 35 20.3 20.2 30 Gain 20.1 20 15 460 462 Frequency (MHz) 19.9 470 468 Power Sweep, CW Conditions VDD = 28 V, ƒ = 470 MHz VDD = 28 V, IDQ = 900 mA, ƒ = 470 MHz 21.0 20.5 19.5 IDQ = 900 mA 19.0 22 80 21 70 20 IDQ = 1125 mA 20.0 Gain (dB) Gain (dB) 466 Power Sweep at selected IDQ 21.5 60 Gain 19 50 18 40 Efficiency 17 IDQ = 675 mA 18.0 464 Frequency (MHz) 22.0 18.5 20.6 P–1dB 20 -20 470 468 20.7 50 25 -19 15 460 20.8 Efficiency 30 TCASE = 25°C TCASE = 90°C 16 17.5 17.0 20 15 39 41 43 45 47 49 51 53 55 Data Sheet 10 39 Output Power (dBm) Drain Efficiency (%) 25 20.9 Gain (dB) -13 Efficiency (%), P1dB (dBm) 50 65 Input Return Loss (dB) Gain (dB), Efficiency (%) VDD = 28 V, IDQ = 900 mA, P1dB 41 43 45 47 49 51 53 55 Output Power (dBm) 3 of 11 Rev. 02, 2008-11-21 PTFA041501GL PTFA041501HL Confidential, Limited Internal Distribution Typical Performance (cont.) Intermodulation Distortion vs. Pout IM3 vs. Output Power at Selected Biases VDD = 28 V, IDQ = 900 mA, VDD = 28 V , ƒ1 = 469 MHz, ƒ 2 = 470 MHz 0 50 -25 -10 45 -27 40 Efficiency 35 -30 IM3 30 -40 25 IM5 -50 20 -60 IM7 -70 36 38 40 42 44 46 48 675 mA -29 IMD (dBc) -20 Drain Efficiency (%) Intermodulation Distortion (dBc) ƒ 1 = 469 MHz, ƒ 2 = 470 MHz -31 -33 900 mA -35 -37 1125 mA -39 15 -41 10 -43 36 50 38 Output Power (dBm), avg. 42 44 46 48 Bias Voltage vs. Temperature Voltage normalized to typical gate voltage, series show current IDQ = 900 mA, ƒ = 470 MHz 55 0.29 A Normalized Bias Voltage (V) 1.03 54 53 52 51 26 28 30 32 1.47 A 1.01 2.20 A 1.00 4.41 A 0.99 6.61 A 8.81 A 0.98 11.02 A 0.97 0.96 0 20 40 60 80 100 Case Temperature (°C) Supply Voltage (V) Data Sheet 0.88 A 1.02 0.95 -20 50 24 50 Output Power (dBm) Output Power (at 1 dB Compression) vs. Supply Voltage Output Power (dBm) 40 4 of 11 Rev. 02, 2008-11-21 PTFA041501GL PTFA041501HL Confidential, Limited Internal Distribution RD G Broadband Circuit Impedance S T OW A Z Source Ω Frequency Z Load Ω MHz R jX R jX 450 0.88 –3.20 1.33 0.22 455 0.84 –3.20 1.35 0.31 460 0.84 –3.10 1.40 0.38 465 0.84 –3.00 1.41 0.47 470 0.83 –2.90 1.44 0.57 0.2 0.1 0.0 470 MHz 450 MHz Z Source 470 MHz 450 MHz 0.1 <--- S Z Load D L OA D S T OW AR NGT H G EL E WAV Z Load - W AV E LE NGTH Z Source Z0 = 50 Ω 0.1 D See next page for circuit information Data Sheet 5 of 11 Rev. 02, 2008-11-21 PTFA041501GL PTFA041501HL Confidential, Limited Internal Distribution Reference Circuit C1 0.001µF R2 1.3K V R6 1.2K V QQ1 LM7805 VDD Q1 BCP56 C2 0.001µF R3 2K V C3 0.001µF R4 2K V R5 3.3K V C4 10µF 35V R6 10 V C5 0.1µF L1 VDD R7 5.1K V C6 120pF C11 1µF C10 100pF C12 10µF 50V l7 C13 0.1µF 50V C14 10µF 50V l4 C8 11pF C7 100pF J1 l1 l2 l3 l6 DUT l5 C9 4.3pF l10 l8 C20 5.6pF C22 11pF l11 l12 C21 5.1pF C23 11pF C25 100pF l13 l14 J2 C24 8.2pF l9 L2 C15 100pF C16 1µF C17 10µF 50V C18 0.1µF 50V C19 10µF 50V V66000-G9267-D631-01-7606.dwg Reference circuit schematic for ƒ = 460 MHz Circuit Assembly Information DUT PCB PTFA041501GL or PTFA041501HL 0.76 mm [.030"] thick, εr = 9.2 LDMOS Transistor Rogers TMM10 2 oz. copper Microstrip Electrical Characteristics at 460 MHz 1 Dimensions L x W (mm) Dimensions L x W (in.) l1 l2 l3 l4 l5 l6 l7 l8 l9 l 10 l 11 l 12 l 13 l 14 Data Sheet 0.016 0.058 0.097 0.081 0.040 0.158 0.030 0.158 0.030 0.025 0.105 0.006 0.104 0.014 λ, 50.69 Ω λ, 24.34 Ω λ, 4.85 Ω λ, 50.69 Ω λ, 4.85 Ω λ, 37.73 Ω λ, 10.94 Ω λ, 37.73 Ω λ, 10.94 Ω λ, 5.58 Ω λ, 5.58 Ω λ, 5.58 Ω λ, 21.37 Ω λ, 50.69 Ω 4.32 x 0.71 14.22 x 2.54 21.59 x 17.78 21.59 x 0.71 8.89 x 17.78 40.64 x 1.27 5.59 x 7.11 40.64 x 1.27 5.59 x 7.11 5.59 x 15.24 23.62 x 15.24 1.27 x 15.24 25.4 x 3.05 3.81 x 0.71 6 of 11 0.170 0.560 0.850 0.850 0.350 1.600 0.220 1.600 0.220 0.220 0.930 0.050 1.000 0.150 x x x x x x x x x x x x x x 0.028 0.100 0.700 0.280 0.700 0.050 0.280 0.050 0.280 0.600 0.600 0.600 0.120 0.028 Rev. 02, 2008-11-21 PTFA041501GL PTFA041501HL Confidential, Limited Internal Distribution Reference Circuit (cont.) GND R5 R4 C4 C14 C12 C3 R3 C2 R2 C5 C6 QQ1 C1 VDD R6 R7 L1 R1 C10 Q1 C8 C20 C22 C13 C11 C24 C25 RF IN RF OUT C7 C21 C9 C23 C15 C16 C18 L2 041501in_03 041501out_03 C17 C19 V66100-G9267-D631-01-7631.dwg R5 R4 QQ1 C1 C4 C3 R3 C2 R2 C5 R6 R7 R1 Q1 C8 Reference circuit assembly diagram (not to scale). Gerber files for this circuit available on request. Data Sheet 7 of 11 Rev. 02, 2008-11-21 PTFA041501GL PTFA041501HL Confidential, Limited Internal Distribution Reference Circuit (cont.) Component Description Suggested Manufacturer P/N or Comment C1, C2, C3 C4 C5, C13, C18 C6 C7, C10, C15, C25 C8, C22, C23 C9 C11, C16 C12, C14, C17, C19 C20 C21 C24 L1, L2 Q1 QQ1 R1 R2 R3 R4 R5 R6 R7 Capacitor, 0.001 µF Tantalum capacitor, 10 µF, 35 V Capacitor, 0.1 µF Ceramic capacitor, 120 pF Ceramic capacitor, 100 pF Ceramic capacitor, 11 pF Ceramic capacitor, 4.3 pF Capacitor, 1.0 µF Capacitor, 10 µF, 50 V Ceramic capacitor, 5.6 pF Ceramic capacitor, 5.1 pF Ceramic capacitor, 8.2 pF Ferrite, 6 mm Transistor Voltage regulator Chip resistor, 1.2k ohms Chip resistor, 1.3k ohms Chip resistor, 2k ohms Potentiometer, 2k ohms Chip resistor, 3.3k ohms Chip resistor, 10 ohms Chip resistor, 5.1k ohms Digi-Key Digi-Key Digi-Key ATC ATC ATC ATC ATC Garrett Electronics ATC ATC ATC Ferroxcube Infineon Technologies National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key PCC1772CT-ND PCS6106TR-ND P4525-ND 100B 121 100B 101 100B 110 100B 4R3 920C105 TPS106K050R0400 100B 5R6 100B 5R1 100B 8R2 53/3/4.6-452 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2.0KECT-ND 3224W-202ETR-ND P3.3KECT-ND P10ECT-ND P5.1KECT-ND Data Sheet 8 of 11 Rev. 02, 2008-11-21 PTFA041501GL PTFA041501HL Confidential, Limited Internal Distribution Package Outline Specifications Package PG-63248-2 4.83±0.51 [.190±.020] 45° X 2.72 [45° X .107] CL 6. 45° X 1.78 [45° X .070] 9.78 ± 0.08 [.385 ± .003] CL 2X R1.63 [R.064] 3X R0.51 +1.14 –0.25 [R.020+.045 –.010 ] 20.27 [.798] 3.63+0.25 –0.13 [.143 +.010 –.005 ] CL 0.064 (.0025) –A– PG-63248-2(G)_po_8-28-08 34.04 ± 0.08 [1.340 ± .003] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. Pins: D = drain, S = source, G = gate. 4. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch]. 5. Gold plating thickness: < 0.254 micron [< 10 microinch] 6. Tabs may protrude 0.13 [.005] max from body. 7. All tolerances ± 0.25 [.01] / ± 0.127 [.005] unless specified otherwise. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 9 of 11 Rev. 02, 2008-11-21 PTFA041501GL PTFA041501HL Confidential, Limited Internal Distribution Package Outline Specifications (cont.) Package PG-64248-2 9.78 ± 0.08 [.385 ± .003] pg-64248-2(h)_po_11-12-08 20.57 ± 0.08 [.810 ± .003] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. Pins: D = drain, S = source, G = gate. 4. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch]. 5. Gold plating thickness: < 0.254 micron [< 10 microinch] 6. Tabs may protrude 0.13 [.005] max from body. 7. All tolerances ± 0.25 [.01] / ± 0.127 [.005] unless specified otherwise. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 10 of 11 Rev. 02, 2008-11-21 PTFA041501GHL V1 Confidential, Limited Internal Distribution Revision History: 2008-11-21 2008-09-09, Preliminary Data Sheet Previous Version: Page Subjects (major changes since last revision) all 1–4 Remove Preliminary designation. Finalize specifications. 5–7 Add circuit and impedance information. Data Sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International GOLDMOS® is a registered trademark of Infineon Technologies AG. Edition 2008-11-21 Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 11 of 11 Rev. 02, 2008-11-21