INFINEON PTFB211803EL

PTFB211803EL
PTFB211803FL
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
180 W, 2110 – 2170 MHz
Description
The PTFB211803EL and PTFB211803FL are 180-watt LDMOS FETs
intended for use in multi-standard cellular power amplifier applications
in the 2110 to 2170 MHz frequency band. Features include input and
output matching, high gain and thermally-enhanced packages with
slotted or earless flanges. Manufactured with Infineon's advanced
LDMOS process, these devices provide excellent thermal performance and superior reliability.
• Broadband internal matching
-20
40
-25
35
30
-35
25
-40
20
IMD Up
ACPR
-45
-50
15
IMD Low
-55
-60
31
33
35
37
39
41
43
45
47
Efficiency (%)
IMD (dBc) / ACPR (dBc)
VDD = 30 V, IDQ = 1.30 A, ƒ = 2170 MHz, 3GPP
WCDMA, PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
Efficiency
PTFB211803FL
H-34288-4/2
Features
Two-carrier WCDMA 3GPP Drive-up
-30
PTFB211803EL
H-33288-6
• Typical two-carrier WCDMA performance at
2170 MHz, 30 V
- Average output power = 40 W
- Linear Gain = 17.5 dB
- Efficiency = 29.7%
- Intermodulation distortion = –34 dBc
- Adjacent channel power = –37 dBc
• Typical CW performance, 2170 MHz, 30 V
- Output power at P1dB = 180 W
- Efficiency = 55%
10
• Increased negative gate-source voltage range for
improved performance in Doherty amplifiers
5
• Integrated ESD protection.
0
• Capable of handling 10:1 VSWR @ 30 V,
180 W (CW) output power
49
Output Power (dBm)
• Pb-free and RoHS compliant
RF Characteristics
Two-carrier WCDMA Measurements (not subject to production test–verified by design/characterization in Infineon test fixture)
VDD = 30 V, IDQ = 1.3 A, POUT = 40 W average, ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
—
17.5
—
dB
Drain Efficiency hD
—
29.5
—
%
Adjacent Channel Power Ratio
ACPR
—
–38
—
dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 14
Rev. 05, 2010-11-10
PTFB211803EL
PTFB211803FL
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-carrier WCDMA Measurements (tested in Infineon test fixture)
VDD = 30 V, IDQ = 1.3 A, POUT = 38 W average, ƒ1 = 2165 MHz, ƒ2 = 2170 MHz, 3GPP signal, channel bandwidth =
3.84 MHz, peak/average = 7.5 dB @ 0.01% CCDF
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
16
17
—
dB
Drain Efficiency hD
28
29.5
—
%
Intermodulation Distortion
IMD
—
–32.5
–31.5
dBc
DC Characteristics
Characteristic
Conditions
Symbol
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VGS = 0 V, IDS = 10 mA
V(BR)DSS
65
—
—
V
Drain Leakage Current
VDS = 28 V, VGS = 0 V
IDSS
—
—
1.0
µA
Drain Leakage Current
VDS = 63 V, VGS = 0 V
IDSS
—
—
10.0
µA
On-State Resistance VGS = 10 V, VDS = 0.1 V
RDS(on)
—
0.05
—
W
Operating Gate Voltage
VDS = 30 V, IDQ = 1.3 A
VGS
2.3
3.0
3.3
V
Gate Leakage Current
VGS = 10 V, VDS = 0 V
IGSS
—
—
1.0
µA
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
V
Gate-Source Voltage
VGS
–6 to +10
V
Junction Temperature
TJ
200
°C
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (TCASE = 70°C, 180 W CW)
RqJC
0.3
°C/W
Ordering Information
Type and Version
Package Type
Package Description
Shipping
PTFB211803EL V1
H-33288-6
Slotted flange, single-ended
Tray
PTFB211803EL V1 R250
H-33288-6
Slotted flange, single-ended
Tape & Reel, 250 pcs
PTFB211803FL V2
H-34288-4/2
Earless flange, single-ended
Tray
PTFB211803FL V2 R250
H-34288-4/2
Earless flange, single-ended
Tape & Reel, 250 pcs
Data Sheet 2 of 14
Rev. 05, 2010-11-10
PTFB211803EL
PTFB211803FL
Confidential, Limited Internal Distribution
Typical Performance (data taken in a production test fixture)
Two-carrier WCDMA 3GPP
Single-carrier WCDMA Drive-Up
VDD = 30 V, IDQ = 1.30 A, ƒ = 2170 MHz, 3GPP
WCDMA, PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
40
-20
40
30
Gain
17
20
16
10
Efficiency
15
ACP (dBc)
Gain (dB)
18
Drain Efficiency (%)
-25
35
37
39
41
43
45
47
-30
30
-35
25
-40
20
ACP Low
-45
15
-50
10
ACP Up
-55
0
33
35
Efficiency
5
-60
49
Drain Efficiency (%)
19
VDD = 30 V, IDQ = 1.30 A, ƒ = 2170 MHz
3GPP WCDMA, PAR = 7.5 dB, BW 3.84 MHz
0
33
35
Output Power (dBm)
37
39
41
43
45
47
49
Output Power (dBm)
Single-carrier WCDMA, 3GPP Broadband
CW Performance
Gain vs. Output Power
VDD = 30 V, IDQ = 1.30 A, PO UT = 47 dBm
VDD = 30 V, ƒ = 2170 MHz
-10
30
-20
-30
Efficiency
ACP
20
-40
Gain
10
Power Gain (dB)
IRL
40
2100
2120
2140
2160
2180
IDQ = 1.30 A
16
41
2200
Frequency (MHz)
Data Sheet – DRAFT ONLY
17
IDQ = 0.90 A
15
-50
2080
IDQ = 1.80 A
18
IRL (dB) / ACP Up (dBc)
Gain (dB) / Efficiency (%)
50
43
45
47
49
51
53
Output Power (dBm)
3 of 14
Rev. 05, 2010-11-10
PTFB211803EL
PTFB211803FL
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Two-tone Drive-up
Two-tone Drive-up
VDD = 30 V, IDQ = 1.30 A,
ƒ1 = 2170 MHz, ƒ2 = 2169 MHz
VDD = 30 V, IDQ = 1.30 A,
ƒ1 = 2170 MHz, ƒ2 = 2169 MHz
-15
19
40
-25
30
-35
Gain (dB)
Gain
20
17
16
10
Efficiency
15
Efficiency (%)
18
42
44
46
48
50
52
Efficiency
-45
20
-55
10
0
40
54
42
-20
Efficiency
35
-30
IMD3
25
-40
Gain
15
2110MHz
-40
-50
2200
41
Frequency (MHz)
Data Sheet 54
2140MHz
-30
-50
2180
52
2170MHz
IMD (dBc)
45
2160
50
-20
Return Loss (dB) / IMD (dBc)
Gain (dB) / Efficiency (%)
-10
2140
48
VDD = 30 V, IDQ = 1.30 A, tone spacing = 1 MHz
55
2120
46
Two-tone Drive-up at
Selected Frequencies
VDD = 30 V, IDQ = 1.30 A, PO UT = 63 W
2100
44
Output Power, PEP (dBm)
Two-tone Broadband Performance
2080
30
IMD3
Output Power, PEP (dBm)
IRL
40
-65
0
40
50
Efficiency (%)
50
IMD (dBc)
20
43
45
47
49
51
53
Output Power, PEP (dBm)
4 of 14
Rev. 05, 2010-11-10
PTFB211803EL
PTFB211803FL
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Power Sweep, CW
Gain & Efficiency vs. Output Power
Power Sweep, CW
Gain & Efficiency vs. Output Power
VDD = 30 V, IDQ = 1.30 A, ƒ = 2170 MHz
18
50
17
40
Gain
16
15
30
Efficiency
+25°C
+85°C
–10° C
20
14
19
18
44
46
48
50
45
Gain
17
35
Efficiency
16
10
42
55
25
15
52
15
41
Output Power (dBm)
Drain Efficiency (%)
60
Gain (dB)
19
Drain Efficiency (%)
Gain (dB)
VDD = 30 V, IDQ = 1.30 A, ƒ = 2170 MHz
43
45
47
49
51
53
Output Power (dBm)
Intermodulation Distortion
vs. Output Power
VDD = 30 V, IDQ = 1.30 A,
ƒ1 = 2170 MHz, ƒ2 = 2169 MHz
-20
3rd Order
IMD (dBc)
-30
5th
-40
7th
-50
-60
-70
40
45
50
55
Output Power, PEP (dBm)
Data Sheet – DRAFT ONLY
5 of 14
Rev. 05, 2010-11-10
5
4
0.
0
0.
45
0.
nalized to 50 Ohms
2080 MHz
0.
MHz
3
PTFB211803EL
PTFB211803FL
R -->
RD G
E NE
RA T
O
S
Z Load W
0.4
0.3
0.2
Z Load
0.1
2080 MHz
2200 MHz
MHz
R
jX
R
jX
2200
2.02
–6.03
1.70
–4.67
2170
2.12
–6.26
1.72
–4.76
2140
2.23
–6.50
1.73
–4.85
2110
2.34
–6.75
1.75
–4.95
2080
2.47
–7.01
1.77
–5.05
E
W AV
<---
Z Source W
Frequency
0.0
G
W ARD LOA D T HS T O
L ENG
- W AV E LE NGT H
S T OW
A
Z Load
Z0 = 50 Ω
0.1
D
Z Source
0. 2
Broadband Circuit Impedance
0.1
Confidential, Limited Internal Distribution
Z Source
0. 2
0. 3
0.
4
0. 6
0.
5
0.
45
0
0.
5
See next page for reference circuit information
Data Sheet 6 of 14
Rev. 05, 2010-11-10
PTFB211803EL
PTFB211803FL
Confidential, Limited Internal Distribution
Reference Circuit
C802
1000 pF
S2
8
C801
1000 pF
C803
1000 pF
4
R805
1200 Ohm
In
Out
NC
NC
2
3
6
1
7
5
R803
10 Ohm
2 C
1
B
4
S
R802
10 Ohm
S1
3 E
S4
R801
1300 Ohm
3
TL111
R804
100 Ohm
TL108
R102
10 Ohm
TL133
2
TL114
TL125
1
TL117
TL134
2
3
1
TL105
TL107
TL126
TL102
3
C102
100000 pF
C101
10 pF
2
TL106
3
1
TL115
TL121
RF_IN
TL112
TL123
C103
4710000 pF
2
3
1
C106
10 pF
TL132
TL137
TL136
1
TL129
TL131
TL120
TL101 TL113
2
GATE DUT
(Pin G)
3
1
2
3
4
TL110
TL128
TL130
C104
4710000 pF
2
C108
2.1 pF
3
1
C105
100000 pF
TL116
C107
10 pF
2
3
1
e r=3.48
TL109
H=20 mil
RO/RO4350B1
R101
10 Ohm
TL135
TL119
TL122
TL104
TL103
TL118
TL124
3
2
1
b 2 1 1 8 0 3 e f l _ b d i n _ 0 8 - 2 6 - 2 0 1 0
Reference circuit input schematic for ƒ = 2170 MHz
C210
10000000 pF
TL212
TL210
TL230
TL229
TL234
TL232
2
1
TL231
2
3
DRAIN DUT
(Pin D)
TL238
TL205
TL223
TL226
TL214
3
1
2
1
TL222
2
3
VDD
C205
100000000 pF
C208
2200000 pF
TL202
TL215
TL213
1
3
C207
1000000 pF
DUT
(Pin V)
TL237
TL233
TL208
TL227
1
TL204
TL235
C201
10 pF
TL206
TL207
TL201
TL203
RF_OUT
2
3
C203
0.3 pF
e
r=3.48
H=20 mil
RO/RO4350B1
C209
1000000 pF
DUT
(Pin V)
TL209
TL236
TL220
TL224
2
C204
100000000 pF
C206
2200000 pF
TL219
3
1
TL225
2
TL228
3
1
TL221
2
1
TL216
TL218
b 2 1 1 8 0 3 e f l _ b d o u t _ 0 8 - 2 6 - 2 0 1 0
2
TL217
3
1
3
TL211
C202
10000000 pF
VDD
Reference circuit output schematic for ƒ = 2170 MHz
Data Sheet 7 of 14
Rev. 05, 2010-11-10
PTFB211803EL
PTFB211803FL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Description
DUT
PTFB211803EL or PTFB211803FL
PCB
0.508 mm [.020"] thick, er = 3.66, Rogers 4350, 1 oz. copper Electrical Characteristics at 2170 MHz
Transmission
Electrical Line
Characteristics Dimensions: mm Dimensions: mils
Input
TL101
0.053 λ, 6.67 Ω W = 13.970, L = 4.064
W = 550, L = 160
TL102, TL103
0.019 λ, 54.17 Ω W = 1.016, L = 1.575
W = 40, L = 62
TL104, TL105
0.000 λ, 36.77 Ω W = 1.829, L = 0.025
W = 72, L = 1
TL106, TL122
0.026 λ, 54.17 Ω W = 1.016, L = 2.159
W = 40, L = 85
TL107
0.021 λ, 54.17 Ω W = 1.016, L = 1.727
W = 40, L = 68
TL108
0.018 λ, 54.17 Ω W = 1.016, L = 1.524
W = 40, L = 60
TL109
0.029 λ, 54.17 Ω W = 1.016, L = 2.451
W = 40, L = 97
TL110
0.092 λ, 63.89 Ω W = 0.762, L = 7.831
W = 30, L = 308
TL111
0.031 λ, 34.72 Ω W = 1.981, L = 2.540
W = 78, L = 100
TL112
W1 = 1.270, W2 = 2.286
W1 = 50, W2 = 90
TL113
W1 = 17.780, W2 = 12.700
W1 = 700, W2 = 500
0.012 λ, 54.17 Ω W1 = 1.016, W2 = 1.270, W3 = 1.016
W1 = 40, W2 = 50, W3 = 40
TL115, TL116, TL126, 0.019 λ, 63.89 Ω TL128
W1 = 0.762, W2 = 0.762, W3 = 1.600
W1 = 30, W2 = 30, W3 = 63
TL117, TL118, TL119
W = 1.016
W = 40
TL120
W1 = 13.970, W2 = 1.016, W3 = 13.970
W4 = 1.016
W1 = 550, W2 = 40, W3 = 550
W4 = 40
TL114
TL121
0.032 λ, 47.12 Ω W = 1.270, L = 2.692
W = 50, L = 106
TL123
0.016 λ, 31.24 Ω W = 2.286, L = 1.270
W = 90, L = 50
TL124, TL134
0.095 λ, 54.17 Ω W = 1.016, L = 8.001
W = 40, L = 315
TL125, TL127
0.022 λ, 54.17 Ω W1 = 1.016, W2 = 1.016, W3 = 1.829
W1 = 40, W2 = 40, W3 = 72
TL129
0.005 λ, 6.67 Ω W = 13.970, L = 0.356
W = 550, L = 14
TL130
0.000 λ, 144.35 Ω W = 0.025, L = 0.025
W = 1, L = 1
TL131 (taper) 0.008 λ, 6.67 Ω / 7.64 Ω W1 = 13.970, W2 = 12.065, L = 0.584
W1 = 550, W2 = 475, L = 23
TL132
0.134 λ, 47.12
W = 1.270, L = 11.151
W = 50, L = 439
TL133
0.012 λ, 54.17
W = 1.016, L = 1.016
W = 40, L = 40
TL135
0.012 λ, 54.17
W = 1.016, L = 1.021
W = 40, L = 40
TL136
0.000 λ, 7.64
W1 = 12.065, W2 = 12.065, W3 = 0.025
TL137 (taper)
0.032 λ, 7.64 Ω / 47.12 Ω W1 = 12.065, W2 = 1.270, L = 2.464
W1 = 475, W2 = 475, W3 = 1
W1 = 475, W2 = 50, L = 97
table continued on page 9
Data Sheet 8 of 14
Rev. 05, 2010-11-10
PTFB211803EL
PTFB211803FL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Electrical Characteristics at 2170 MHz
Transmission
Electrical Line
Characteristics Dimensions: mm Dimensions: mils
Output
TL201
W1 = 1.270, W2 = 2.540
W1 = 50, W2 = 100
TL202
0.001 λ, 5.33 Ω
W = 17.780, L = 0.076
W = 700, L = 3
TL203
0.047 λ, 47.12 Ω
W = 1.270, L = 3.912
W = 50, L = 154
TL204
0.044 λ, 39.51 Ω
W = 1.651, L = 3.581
W = 65, L = 141
TL205
0.054 λ, 4.84 Ω
W = 19.685, L = 4.064
W = 775, L = 160
TL206, TL207
0.016 λ, 28.85 Ω
W = 2.540, L = 1.270
W = 100, L = 50
TL208
0.012 λ, 39.51 Ω
W = 1.651, L = 1.016
W = 65, L = 40
TL209
0.032 λ, 16.90 Ω
W = 4.928, L = 2.540
W = 194, L = 100
TL210
0.032 λ, 17.05 Ω
W = 4.877, L = 2.540
W = 192, L = 100
TL211, TL212
W = 3.048
W = 120
TL213, TL218
0.038 λ, 25.04 Ω
W1 = 3.048, W2 = 3.048, W3 = 3.048
W1 = 120, W2 = 120, W3 = 120
TL214, TL216
0.135 λ, 25.04 Ω
W = 3.048, L = 10.820
W = 120, L = 426
TL215, TL217
0.046 λ, 25.04 Ω
W = 3.048, L = 3.683
W = 120, L = 145
TL219, TL228, TL233, 0.003 λ, 25.04 Ω
TL234
W = 3.048, L = 0.254
W = 120, L = 10
TL220, TL229
0.016 λ, 25.04 Ω
W = 3.048, L = 1.270
W = 120, L = 50
TL221, TL237
0.031 λ, 25.04 Ω
W1 = 3.048, W2 = 3.048, W3 = 2.489
W1 = 120, W2 = 120, W3 = 98
TL222 (taper)
0.074 λ, 5.33 Ω / 39.51 Ω
W1 = 17.780, W2 = 1.651, L = 5.588
W1 = 700, W2 = 65, L = 220
TL223
0.003 λ, 4.84 Ω
W = 19.685, L = 0.254
W = 775, L = 10
W1 = 3.048, W2 = 3.048, W3 = 1.778
W1 = 120, W2 = 120, W3 = 70
TL224, TL225, TL231, 0.022 λ, 25.04 Ω
TL232
TL226 (taper)
0.010 λ, 4.84 Ω / 5.33 Ω
W1 = 19.685, W2 = 17.780, L = 0.762
W1 = 775, W2 = 700, L = 30
TL227
0.022 λ,39.51 Ω
W1 = 1.651, W2 = 1.651, W3 = 1.829
W1 = 65, W2 = 65, W3 = 72
TL230, TL236
W1 = 4.928, W2 = 3.048, W1 = 194, W2 = 120
TL235
W1 = 1.651, W2 = 2.540
W1 = 65, W2 = 100
TL238
W1 = 12.700, W2 = 17.780
W1 = 500, W2 = 700
Data Sheet 9 of 14
Rev. 05, 2010-11-10
PTFB211803EL
PTFB211803FL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Circuit Assembly Information
Test Fixture Part No. LTN/PTFB211803EF
Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower
RO4350, .020
RO4350, .020
(60)
R804 C802 C801 R801
VDD
R805 C803
(60)
C210
VDD
S4
R802
C208
C207
+
S1
S2
R803
C205
R102
C102
RF_IN
C101
C103
C106
RF_OUT
C104
C203
C108
C201
C105
R101
C204
C107
C209
C206
VDD
C202
PTFB211803_IN_01
PTFB211803_OUT_01
b211803efl_cd_11-08-2010
Reference circuit assembly diagram (not to scale)
Data Sheet 10 of 14
Rev. 05, 2010-11-10
PTFB211803EL
PTFB211803FL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Components Information
Component Description
Suggested Manufacturer
P/N Input
C101, C106, C107
Chip capacitor,10 pF
ATC
ATC100B100JW500XJ
C102, C105
Chip capacitor, 0.1 μF
Digi-Key
PCC104BCT-ND
C103, C104
Chip capacitor, 4.71 μF
Digi-Key
493-2372-2-ND
C108
Chip capacitor, 2.1 pF
ATC
ATC100B2R1BW500XB
C801, C802, C803
Capacitor, 1000 pF
Digi-Key
PCC1772CT-ND
R101, R102, R802, R803
Resistor, 10 Ω
Digi-Key
P10ECT-ND
R801
Resistor, 1300 Ω
Digi-Key
P1.3KGCT-ND
R804
Resistor, 100 Ω
Digi-Key
P100ECT-ND
R805
Resistor, 1200 Ω
Digi-Key
P1.2KGCT-ND
S1
Transistor Digi-Key
BCP56-ND
S2
Voltage Regulator
Digi-Key
LM78L05ACM-ND
S4
Potentiometer, 2k Ω
Digi-Key
3224W-202ECT-ND
Output
C201
Chip capacitor, 10 pF
ATC
ATC100B100JW500XJ
C202, C210
Capacitor, 10 μF
Digi-Key
587-1818-2-ND
C203
Chip capacitor, 0.3 pF
ATC
ATC100B0R3BW500XB
C204, C205
Capacitor, 100 μF
Digi-Key
PCE4442TR-ND
C206, C208
Chip capacitor, 2.2 μF
Digi-Key
445-1447-2-ND
C207, C209
Chip capacitor, 1 μF
Digi-Key
445-1411-2-ND
Data Sheet 11 of 14
Rev. 05, 2010-11-10
PTFB211803EL
PTFB211803FL
Confidential, Limited Internal Distribution
Package Outline Specifications
Package H-33288-6
45° X 2.032
[45° X .080]
4X 30°
4X R1.524
[R.060]
2X 5.080
[.200] (2 PLS)
4X 1.143
[.045] (4 PLS)
V
D
4.889±.510
[.192±.020]
V
S
CL
2X R1.626
[R.064]
G
E
9.398
[.370]
9.779
[.385]
19.558±.510
[.770±.020]
F
H -33288 - 6_ po _02 -18 - 2010
CL
2X 12.700
[.500]
2X 22.860
[.900]
27.940
[1.100]
22.352±.200
[.880±.008]
1.575
[.062] (SPH)
4.039 +.254
–. 127
010
[.159 +.
–. 005 ]
CL
34.036
[1.340]
1.016
[.040]
Diagram Notes—unless otherwise specified:
Data Sheet 1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: A = gate, B = source, C = drain, D = VDD, E, F = N.C.
5. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch].
6. Gold plating thickness: 0.25 micron [10 microinch] max.
12 of 14
Rev. 05, 2010-11-10
PTFB211803EL
PTFB211803FL
Confidential, Limited Internal Distribution
Package Outline Specifications (cont.)
Package H-34288-4/2
22.860
[.900]
45° X 2.032
[45° X .080]
2X 5.080
[.200]
2X 1.143
[.045]
C
L
2X 30°
V
D
V
9.779
[.385]
9.398
[.370]
C
L
4X R0.508+.381
-.127
R.020+.015
-.005
19.558±.510
[.770±.020]
G
]
[
4.889±.510
[.192±.020]
2X 12.700
[.500]
4.039+.254
-.127
.159+.010
-.005
22.352±.200
[.880±.008]
[
]
C 66065-A0003- C743- 01-0027 H- 34288- 4_
2 .dwg
1.575
[.062] (SPH)
C
L
1.016
[.040]
23.114
[.910]
S
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: D = drain; S = source; G = gate; V = VDD.
5. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch].
6. Gold plating thickness: 0.25 micron [10 microinch] max.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet 13 of 14
Rev. 05, 2010-11-10
PTFB211803EL V1 / PTFB211803FL V2
Confidential, Limited Internal Distribution
Revision History:
2010-11-10
Previous Version: 2010-08-25, Data Sheet
Page
Subjects (major changes since last revision)
1, 2, 12
Changed eared flange package type
Data Sheet
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Edition 2010-11-10
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
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For further information on technology, delivery terms and conditions and prices, please contact the nearest
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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of
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Data Sheet 14 of 14
Rev. 05, 2010-11-10