IRF IRF7342QPBF

PD - 96109
IRF7342QPbF
O
O
O
O
O
O
O
O
Advanced Process Technology
Ultra Low On-Resistance
Dual P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Automotive [Q101] Qualified
Lead-Free
HEXFET® Power MOSFET
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
4
5
D2
G2
VDSS = -55V
RDS(on) = 0.105Ω
Top View
Description
Specifically designed for Automotive applications, these
HEXFET® Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a
150°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a
wide variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available in Tape & Reel.
SO-8
Absolute Maximum Ratings
Parameter
VDS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
PD @TC = 70°C
VGS
VGSM
EAS
dv/dt
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µs
Single Pulse Avalanche Energy‚
Peak Diode Recovery dv/dt ƒ
Junction and Storage Temperature Range
Max.
Units
-55
-3.4
-2.7
-27
2.0
1.3
0.016
± 20
30
114
5.0
-55 to + 150
V
A
W
W/°C
V
V
V/ns
°C
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambient…
Typ.
Max.
Units
–––
62.5
°C/W
1
07/23/07
IRF7342QPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-55
–––
–––
–––
-1.0
3.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
VGS = 0V, ID = -250µA
-0.054 ––– V/°C Reference to 25°C, ID = -1mA
0.095 0.105
VGS = -10V, ID = -3.4A „
Ω
0.150 0.170
VGS = -4.5V, ID = -2.7A „
––– –––
V
VDS = VGS, ID = -250µA
––– –––
S
VDS = -10V, ID = -3.1A
––– -2.0
VDS = -55V, VGS = 0V
µA
––– -25
VDS = -55V, VGS = 0V, TJ = 55°C
––– -100
VGS = -20V
nA
––– 100
VGS = 20V
26
38
ID = -3.1A
3.0 4.5
nC
VDS = -44V
8.4
13
VGS = -10V, See Fig. 10 „
14
22
VDD = -28V
10
15
ID = -1.0A
ns
43
64
RG = 6.0Ω
22
32
RD = 16Ω, „
690 –––
VGS = 0V
210 –––
pF
VDS = -25V
86 –––
ƒ = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
-2.0
–––
–––
-27
–––
–––
–––
–––
54
85
-1.2
80
130
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -2.0A, VGS = 0V ƒ
TJ = 25°C, IF = -2.0A
di/dt = -100A/µs ƒ
D
S
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 20mH
RG = 25Ω, IAS = -3.4A. (See Figure 8)
2
ƒ ISD ≤ -3.4A, di/dt ≤ -150A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… When mounted on 1 inch square copper board, t<10 sec
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IRF7342QPbF
100
100
VGS
-15V
-12V
-10V
-8.0V
-6.0V
-4.5V
-4.0V
-3.5V
BOTTOM -3.0V
10
-3.0V
1
20µs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
10
-3.0V
1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
-ISD , Reverse Drain Current (A)
100
-I D , Drain-to-Source Current (A)
20µs PULSE WIDTH
TJ = 150 °C
0.1
0.1
100
-VDS , Drain-to-Source Voltage (V)
TJ = 25 ° C
TJ = 150 ° C
10
1
VGS
-15V
-12V
-10V
-8.0V
-6.0V
-4.5V
-4.0V
-3.5V
BOTTOM -3.0V
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
V DS = -25V
20µs PULSE WIDTH
3
4
5
6
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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7
10
TJ = 150 ° C
TJ = 25 ° C
1
0.1
0.2
V GS = 0 V
0.4
0.6
0.8
1.0
1.2
1.4
-VSD ,Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage
3
IRF7342QPbF
ID = -3.4 A
R DS (on) , Drain-to-Source On Resistance(Ω)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -10V
0
20
40
60
80 100 120 140 160
0.240
0.200
VGS = -4.5V
0.160
0.120
VGS = -10V
0.080
0
2
TJ , Junction Temperature ( °C)
0.35
0.25
I D = -3.4 A
0.15
0.05
8
11
-V GS , Gate-to-Source Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Voltage
4
14
A
EAS , Single Pulse Avalanche Energy (mJ)
RDS(on) , Drain-to-Source On Resistance ( Ω )
0.45
5
6
8
10
12
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 5. Normalized On-Resistance
Vs. Temperature
2
4
-ID , Drain Current (A)
300
ID
-1.5A
-2.7A
BOTTOM -3.4A
TOP
250
200
150
100
50
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
150
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
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IRF7342QPbF
1200
-VGS , Gate-to-Source Voltage (V)
960
C, Capacitance (pF)
20
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
720
480
Coss
240
Crss
0
1
10
--VDS , Drain-to-Source Voltage (V)
VDS =-48V
VDS =-30V
VDS =-12V
16
12
8
4
0
100
ID = -3.1A
0
10
20
30
40
QG , Total Gate Charge (nC)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
PDM
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7342QPbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
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SO-8 Part Marking
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
6
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IRF7342QPbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/2007
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7