IRF IRF7379QPBF

PD - 96111
IRF7379QPbF
HEXFET® Power MOSFET
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Advanced Process Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Automotive [Q101] Qualified
Lead-Free
S1
N-CHANNEL MOSFET
1
8
D1
G1
2
7
D1
S2
3
6
D2
4
5
D2
G2
VDSS
N-Ch
P-Ch
30V
-30V
RDS(on) 0.045Ω 0.090Ω
P-CHANNEL MOSFET
Top View
Description
Specifically designed for Automotive applications, these
HEXFET® Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a
150°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and
a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available in Tape & Reel.
SO-8
Absolute Maximum Ratings
Parameter
VSD
ID @ TA = 25°C
ID @ TA = 70°C
I DM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Drain-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Max.
N-Channel
P-Channel
30
5.8
4.6
46
-30
-4.3
-3.4
-34
2.5
0.02
± 20
5.0
-5.0
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
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Maximum Junction-to-Ambient„
Max.
Units
50
°C/W
1
07/23/07
IRF7379QPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
I DSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
td(on)
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
LD
LS
Internal Drain Inductace
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min. Typ. Max.
N-Ch 30
—
—
P-Ch -30 —
—
N-Ch — 0.032 —
P-Ch — -0.037 —
— 0.038 0.045
N-Ch
— 0.055 0.075
— 0.070 0.090
P-Ch
— 0.130 0.180
N-Ch 1.0 —
—
P-Ch -1.0 —
—
N-Ch 5.2 —
—
P-Ch 2.5 —
—
N-Ch —
— 1.0
P-Ch —
— -1.0
N-Ch —
—
25
P-Ch —
— -25
N-P ––
— ±100
N-Ch —
—
25
P-Ch —
—
25
N-Ch —
— 2.9
P-Ch —
— 2.9
N-Ch —
— 7.9
P-Ch —
— 9.0
N-Ch — 6.8 —
P-Ch —
11
—
N-Ch —
21
—
P-Ch —
17
—
N-Ch —
22
—
P-Ch —
25
—
N-Ch — 7.7 —
P-Ch —
18
—
N-P — 4.0 —
N-P — 6.0 —
N-Ch — 520 —
P-Ch — 440 —
N-Ch — 180 —
P-Ch — 200 —
N-Ch —
72
—
P-Ch —
93
—
Units
V
V/°C
Ω
V
S
µA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = 250µA
VGS = 0V, I D = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, I D = -1mA
VGS = 10V, ID = 5.8A ƒ
VGS = 4.5V, ID = 4.9A ƒ
VGS = -10V, ID =- 4.3A ƒ
VGS = -4.5V, ID =- 3.7A ƒ
VDS = VGS, ID = 250µA
VDS = VGS, I D = -250µA
VDS = 15V, ID = 2.4A ƒ
ƒ
VDS = -24V, ID = -1.8A
VDS = 24 V, VGS = 0V
VDS = -24V, VGS = 0V
VDS = 24 V, VGS = 0V, TJ = 125°C
VDS = -24V, VGS = 0V, TJ = 125°C
VGS = ± 20V
N-Channel
ID = 2.4A, VDS = 24V, VGS = 10V
P-Channel
ID = -1.8A, VDS = -24V, VGS = -10V
N-Channel
VDD = 15V, I D = 2.4A, RG = 6.0Ω,
RD = 6.2Ω
P-Channel
VDD = -15V, ID = -1.8A, RG = 6.0Ω,
RD = 8.2Ω
ƒ
ƒ
Between lead, 6mm (0.25in.) from
package and center of die contact
N-Channel
VGS = 0V, V DS = 25V, ƒ = 1.0MHz
P-Channel
VGS = 0V, V DS = -25V, ƒ = 1.0MHz
ƒ
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
I SM
Pulsed Source Current (Body Diode) 
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min. Typ. Max. Units
Conditions
—
— 3.1
—
— -3.1
A
—
—
46
—
— -34
—
— 1.0
TJ = 25°C, IS = 1.8A, VGS = 0V ƒ
V
—
— -1.0
TJ = 25°C, IS = -1.8A, VGS = 0V ƒ
—
47
71
N-Channel
ns
—
53
80
TJ = 25°C, IF = 2.4A, di/dt = 100A/µs
—
56
84
P-Channel
ƒ
nC
TJ = 25°C, IF = -1.8A, di/dt = -100A/µs
—
66
99
Notes:
 Repetitive rating; pulse width limited by
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
‚ N-Channel ISD ≤ 2.4A, di/dt ≤ 73A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
„ Surface mounted on FR-4 board, t ≤ 10sec.
max. junction temperature. ( See fig. 10 )
P-Channel ISD ≤ -1.8A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
2
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IRF7379QPbF
N-Channel
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
4.5V
10
20µs PULSE WIDTH
TJ = 25°C
1
0.1
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
I , Drain-to-Source Current (A)
D
I , Drain-to-Source Current (A)
D
TOP
1
10
100
A
4.5V
10
20µs PULSE WIDTH
TJ = 150°C
1
0.1
100
VDS , Drain-to-Source Voltage (V)
1
10
100
A
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
ISD , Reverse Drain Current (A)
I D , Drain-to-Source Current (A)
100
TJ = 25°C
TJ = 150°C
VDS = 15V
20µs PULSE WIDTH
10
4
5
6
7
8
9
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
A
10
TJ = 150°C
TJ = 25°C
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
A
2.5
VSD , Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage
3
IRF7379QPbF
I D = 4.0A
1.5
1.0
0.5
VGS = 10V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
R DS (on), Drain-to-Source On Resistance ( Ω )
R DS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
N-Channel
0.20
0.16
0.12
VGS = 4.5V
0.08
VGS = 10V
0.04
0.00
2
4
8
10
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 5. Normalized On-Resistance
Vs. Temperature
R DS (on), Drain-to-Source On Resistance ( Ω )
6
I D , Drain Current (A)
TJ , Junction Temperature (°C)
0.08
0.07
0.06
0.05
ID = 5.8A
0.04
0.03
0
4
8
12
16
VGS , Gate-to-Source Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Voltage
4
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IRF7379QPbF
N-Channel
1000
V GS , Gate-to-Source Voltage (V)
800
C, Capacitance (pF)
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
I D = 2.4A
VDS = 24V
16
Ciss
600
12
C oss
400
Crss
200
0
1
10
100
A
8
4
FOR TEST CIRCUIT
SEE FIGURE 11
0
0
VDS , Drain-to-Source Voltage (V)
5
10
15
20
25
Q G , Total Gate Charge (nC)
Fig 8. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 9. Typical Gate Charge Vs.
Gate-to-Source Voltage
Thermal Response (Z thJA )
100
D = 0.50
10
0.20
0.10
0.05
1
PDM
0.02
t1
0.01
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
A
IRF7379QPbF
100
P-Channel
100
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
10
-4.5V
10
20µs PULSE WIDTH
TJ = 25°C
A
1
0.1
1
10
20µs PULSE WIDTH
TJ = 150°C
1
10
A
100
-VDS , Drain-to-Source Voltage (V)
Fig 11. Typical Output Characteristics
Fig 12. Typical Output Characteristics
100
100
-ISD , Reverse Drain Current (A)
-I D , Drain-to-Source Current (A)
-4.5V
1
0.1
100
-VDS , Drain-to-Source Voltage (V)
TJ = 25°C
TJ = 150°C
10
10
TJ = 150°C
TJ = 25°C
1
VDS = -15V
20µs PULSE WIDTH
1
4
5
6
7
8
9
10
-VGS , Gate-to-Source Voltage (V)
Fig 13. Typical Transfer Characteristics
6
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
TOP
-I D , Drain-to-Source Current (A)
-ID , Drain-to-Source Current (A)
TOP
A
VGS = 0V
0.1
0.0
0.3
0.6
0.9
1.2
A
1.5
-VSD , Source-to-Drain Voltage (V)
Fig 14. Typical Source-Drain Diode
Forward Voltage
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IRF7379QPbF
2.0
R DS (on), Drain-to-Source On Resistance ( Ω )
R DS(on) , Drain-to-Source On Resistance
(Normalized)
P-Channel
I D = -3.0A
1.5
1.0
0.5
VGS = -10V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
0.50
0.40
0.30
VGS = -4.5V
0.20
VGS = -10V
0.10
0.00
0
2
6
8
10
12
14
Fig 16. Typical On-Resistance Vs. Drain
Current
Fig 15. Normalized On-Resistance
Vs. Temperature
R DS (on), Drain-to-Source On Resistance ( Ω )
4
-ID , Drain Current (A)
TJ , Junction Temperature (°C)
0.16
0.14
0.12
0.10
ID = -4.3A
0.08
0.06
0
4
8
12
16
-VGS , Gate-to-Source Voltage (V)
Fig 17. Typical On-Resistance Vs. Gate
Voltage
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7
IRF7379QPbF
1000
20
600
-VGS , Gate-to-Source Voltage (V)
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
800
C, Capacitance (pF)
P-Channel
Ciss
Coss
400
Crss
200
0
1
10
- -V
DS
100
A
ID = -3.0A
VDS = -24V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 22
0
0
5
10
15
20
A
25
Q G , Total Gate Charge (nC)
, Drain-to-Source Voltage (V)
Fig 19. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 18. Typical Capacitance Vs.
Drain-to-Source Voltage
Thermal Response (Z thJA )
100
D = 0.50
10
0.20
0.10
0.05
1
PDM
0.02
t1
0.01
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
8
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IRF7379QPbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
IRF7379QPbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/2007
10
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