BFR740L3 NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Provides outstanding performance for 3 1 a wide range of wireless applications 2 up to 10 GHz and more • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz Outstanding noise figure F = 0.8 dB at 6 GHz • High maximum stable gain Gms = 24 dB at 1.8 GHz • Gold metallization for extra high reliability • 150 GHz fT-Silicon Germanium technology ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR740L3 Marking R7 Pin Configuration 1=B 2=C Package TSLP-3-8 3=E Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value Unit V TA > 0°C 4 TA ≤ 0°C 3.5 Collector-emitter voltage VCES 13 Collector-base voltage VCBO 13 Emitter-base voltage VEBO 1.2 Collector current IC 30 Base current IB 3 Total power dissipation1) Ptot 160 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature T stg -65 ... 150 mA TS ≤ 94°C 1T is measured on the collector lead at the soldering point to the pcb S 1 2005-10-17 BFR740L3 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) RthJS ≤ 350 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. V(BR)CEO 4 4.7 - V ICES - - 30 µA ICBO - - 100 nA IEBO - - 3 µA hFE 160 250 400 DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 13 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain - IC = 25 mA, VCE = 3 V, pulse measured 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 2005-10-17 BFR740L3 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT - 42 - Ccb - 0.1 0.16 Cce - 0.18 - Ceb - 0.38 - GHz IC = 25 mA, VCE = 3 V, f = 2 GHz Collector-base capacitance pF VCB = 3 V, f = 1 MHz, V BE = 0 , emitter grounded Collector emitter capacitance VCE = 3 V, f = 1 MHz, V BE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure dB F IC = 8 mA, VCE = 3 V, f = 1.8 GHz, ZS = Z Sopt - 0.5 - IC = 8 mA, VCE = 3 V, f = 6 GHz, ZS = ZSopt - 0.8 - G ms - 24 - dB G ma - 14.5 - dB Power gain, maximum stable1) IC = 25 mA, VCE = 3 V, Z S = ZSopt, ZL = ZLopt , f = 1.8 GHz Power gain, maximum available1) IC = 25 mA, VCE = 3 V, Z S = ZSopt, ZL = ZLopt, f = 6 GHz |S 21e|2 Transducer gain dB IC = 25 mA, VCE = 3 V, Z S = ZL = 50 Ω, f = 1.8 GHz - 21.5 - f = 6 GHz - 12 - IP 3 - 25 - P-1dB - 11 - Third order intercept point at output2) dBm VCE = 3 V, I C = 25 mA, Z S=ZL=50 Ω, f = 1.8 GHz 1dB Compression point at output IC = 25 mA, VCE = 3 V, Z S=ZL=50 Ω, f = 1.8 GHz 1G 1/2 ma = |S21e / S12e| (k-(k²-1) ), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 3 2005-10-17 BFR740L3 Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(t p) 10 3 180 mW K/W RthJS Ptot 140 120 100 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 10 2 80 60 40 20 0 0 15 30 45 60 75 90 105 120 °C 10 1 -7 10 150 10 -6 10 -5 10 -4 10 -3 10 -2 s TS 10 0 tp Permissible Pulse Load Collector-base capacitance Ccb = ƒ (V CB) Ptotmax/P totDC = ƒ(tp) f = 1 MHz 10 2 0.18 - 0.16 0.14 10 0.12 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 Ccb [pF] Ptotmax /PtotDC 0.2 0.1 0.08 0.06 0.04 0.02 10 0 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 0 tp 0 2 4 6 8 10 12 VCB [V] 4 2005-10-17 BFR740L3 Third order Intercept Point IP3 = ƒ (IC) Transition frequency fT = ƒ(IC) (Output, ZS = ZL = 50 Ω ) VCE = parameter, f = 2 GHz VCE = parameter, f = 1.8 GHz 30 50 27 24 2V to 4V 40 3.00V 21 35 18 30 fT [GHz] IP3 [dBm] 45 4.00V 15 2.00V 25 12 20 9 15 6 10 1.00V 1.00V 3 5 0 0 0.75V 0.50V 0 5 10 15 20 25 30 35 0 5 10 15 I [mA] 20 25 30 35 I [mA] C C Power gain Gma, Gms = ƒ (f) Power gain Gma, Gms = ƒ (IC) VCE = 3 V, I C = 25 mA VCE = 3 V f = parameter 55 34 32 50 30 45 0.90GHz 28 40 26 1.80GHz 24 G [dB] G [dB] 35 30 Gms 25 2.40GHz 22 3.00GHz 20 4.00GHz 18 20 5.00GHz 16 2 |S21| 6.00GHz 15 14 10 5 12 0 1 2 3 4 5 10 6 0 5 10 15 20 25 30 35 IC [mA] f [GHz] 5 2005-10-17 BFR740L3 Power gain Gma, Gms = ƒ (VCE) Noise figure F = ƒ(I C) IC = 25 mA VCE = 3 V, f = parameter f = parameter ZS = ZSopt 36 2 32 1.8 1.6 0.90GHz 28 1.80GHz 24 2.40GHz 1.2 G [dB] F [dB] 3.00GHz 20 4.00GHz 5.00GHz 16 f = 6GHz f = 5GHz f = 4GHz f = 2.4GHz f = 1.8GHz f = 0.9GHz 1.4 6.00GHz 1 0.8 12 0.6 8 0.4 4 0 0.2 0 0.5 1 1.5 2 2.5 V CE 3 3.5 4 4.5 0 5 0 5 10 15 [V] 20 25 30 I [mA] c Noise figure F = ƒ(IC ) VCE = 3V, f = 1.8 GHz Noise figure F = ƒ(f) VCE = 3V, ZS = ZSopt 2 1.8 1.2 1.6 1 1.4 ZS = 50Ω 0.8 ZS = ZSopt 1 F [dB] F [dB] 1.2 0.6 0.8 0.6 0.4 I = 25mA C I = 8.0mA 0.4 C 0.2 0.2 0 0 5 10 15 20 25 0 30 I [mA] 0 1 2 3 4 5 6 7 f [GHz] c 6 2005-10-17 BFR740L3 Source impedance for min. noise figure vs. frequency VCE = 3 V, I C = 8 mA / 25 mA 1 1.5 2 0.5 0.4 I = 8.0mA 3 c 0.3 4 0.2 5 0.1 0.1 0 0.2 0.3 0.4 0.5 3GHz 5GHz 2.4GHz 6GHz 1.8GHz 4GHz 1 1.5 2 0.9GHz 3 4 5 10 −0.1 −10 −0.2 −5 −4 Ic = 25mA −0.3 −3 −0.4 −0.5 −2 −1 −1.5 7 2005-10-17 Package TSLP-3-8 BFR740L3 Package Outline Bottom view 0.39 +0.01 -0.03 0.6 ±0.05 0.5 ±0.035 1) 2 3 2 1 0.35 ±0.05 Pin 1 marking 1±0.05 3 2 x 0.25 ±0.035 1) 0.575 ±0.05 0.05 MAX. 1 0.4 ±0.035 1) Top view 2 x 0.15 ±0.035 1) 1) Dimension applies to plated terminal Foot Print 0.5 R0.1 0.2 0.225 0.2 0.225 0.315 0.35 1 0.95 0.2 0.45 R0.19 0.38 0.6 0.255 For board assembly information please refer to Infineon website "Packages" 0.17 0.15 Copper Solder mask Stencil apertures Marking Layout Type code Laser marking Standard Packing Reel ø180 mm = 15.000 Pieces/Reel 0.5 Pin 1 marking 8 1.16 4 0.76 8 2005-10-17 BFR740L3 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München © Infineon Technologies AG 2005. 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