BAT 14-03W Silicon Schottky Diode • DBS mixer application to 12GHz • Medium barrier type • Low capacitance ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code BAT 14-03W O/white Q62702-A1103 Pin Configuration Package 1=A SOD-323 2=C Maximum Ratings Parameter Symbol Diode reverse voltage VR 4 V Forward current IF 90 mA Operating temperature range Top - 55 ... + 125 °C Storage temperature Tstg - 55 ... + 150 Total power dissipation TS ≤ 85°C Values Ptot 100 Unit mW Thermal Resistance Junction ambient 1) Junction - soldering point RthJA ≤ 450 RthJS ≤ 690 K/W 1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 Mar-01-1996 BAT 14-03W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. DC characteristics V(BR) Breakdown voltage I(BR) = 5 µA V 4 - - IF = 1 mA 0.36 0.43 0.52 IF = 10 mA 0.48 0.55 0.66 VF Forward voltage CT Diode capacitance VR = 0 , f = 1 MHz pF - 0.22 0.35 Ω RF Differential forward resistance IF 10mA/ 50 mA - 5.5 - Diode capacitance CT = f (VR) f = 1MHz 0.50 pF CT 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Semiconductor Group V VR 5.0 2 Mar-01-1996 BAT 14-03W Forward current IF = f (VF) IF Reverse current IR = f (VR) 10 2 10 1 mA mA IR 10 1 10 0 TA=125°C TA=85°C 10 0 10 -1 -40°C 25°C 85°C 125°C TA=25°C 10 -1 10 -2 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 10 -2 V 1.0 VF Semiconductor Group 3 10 -3 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V VR 5.0 Mar-01-1996 BAT 14-03W Package Semiconductor Group 4 Mar-01-1996