BAT 15-04 Silicon Dual Schottky Diode ● ● ● DBS mixer applications to 12 GHz Low noise figure Low barrier type Type Ordering Code (tape and reel) Pin Configuration Marking 1 2 3 Package BAT 15-04 Q62702-A504 A SOT-23 – C S8 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 4 V Forward current IF 110 mA Total power dissipation TS ≤ 55 °C Ptot 100 mW Operating temperature range Top – 55 … + 150 °C Storage temperature range Tstg – 55 … + 150 °C Junction-ambient1) Rth JA ≤ 1090 K/W Junction-soldering point Rth JS ≤ 930 K/W Thermal Resistance 1) Package mounted on aluminum 15 mm x 16.7 mm x 0.7 mm. Semiconductor Group 1 10 94 BAT 15-04 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Value Unit min. typ. max. 4 – – – – 0.23 0.32 – 4 – – 20 – – 0.35 – 5.5 – DC Characteristics Breakdown voltage IR = 5 µA V(BR) Forward voltage IF = 1 mA IF = 10 mA VF Forward voltage matching ∆VF V V mV IF = 10 mA Diode capacitance VR = 0 V, f = 1 MHz CT Forward resistance IF = 10 mA / 50 mA RF pF Ω Package Outline SOT-23 Semiconductor Group 2 BAT 15-04 Forward current IF = f (VF) Reverse current IR = f (VR) Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 3