BSO613SPV G SIPMOSī Power-Transistor Features Product Summary · P-Channel Drain source voltage VDS -60 V · Enhancement mode Drain-source on-state resistance RDS(on) 0.13 W · Avalanche rated Continuous drain current ID -3.44 A · dv/dt rated S 1 8 D S 2 7 D S 3 6 D G 4 5 D Top View Type Package Lead free BSO613SPV G PG-SO 8 Yes Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current SIS00062 Value Unit ID -3.44 A ID puls -13.8 T A = 25 °C Pulsed drain current T A = 25 °C Avalanche energy, single pulse EAS 150 I D = -3.44 A , V DD = -25 V, RGS = 25 W Avalanche energy, periodic limited by Tjmax EAR 0.25 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 2.5 W -55... +150 °C mJ kV/µs I S = -3.44 A, V DS = -48 V, di/dt = 200 A/µs, T jmax = 150 °C T A = 25 °C Tj , Tstg Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev.1.3 55/150/56 Page 1 2007-03-02 BSO613SPV G Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 25 - - 100 - - 50 Characteristics Thermal resistance, junction - soldering point RthJS K/W (Pin 4) RthJA SMD version, device on PCB: @ min. footprint; t £ 10 sec. @ 6 cm 2 cooling area 1); t £ 10 sec. Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS -60 - - Gate threshold voltage, VGS = VDS I D = 1 mA VGS(th) -2.1 -3 -4 Zero gate voltage drain current IDSS Static Characteristics Drain- source breakdown voltage V VGS = 0 V, I D = -250 µA µA VDS = -60 V, V GS = 0 V, T j = 25 °C - -0.1 -1 VDS = -60 V, V GS = 0 V, T j = 125 °C - -10 -100 IGSS - -10 -100 nA RDS(on) - 0.11 0.13 W Gate-source leakage current VGS = -20 V, VDS = 0 V Drain-source on-state resistance VGS = -10 V, I D = -3.44 A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev.1.3 Page 2 2007-03-02 BSO613SPV G Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. gfs 2.2 4.4 - S Ciss - 700 875 pF Coss - 235 295 Crss - 95 120 td(on) - 10 15 tr - 11 16.5 td(off) - 32 48 tf - 12 18 Dynamic Characteristics Transconductance VDS³2*I D*RDS(on)max , ID = -3.44 A Input capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Output capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Turn-on delay time ns VDD = -30 V, V GS = -10 V, ID = -3.44 A, RG = 2.7 W Rise time VDD = -30 V, V GS = -10 V, ID = -3.44 A, RG = 2.7 W Turn-off delay time VDD = -30 V, V GS = -10 V, ID = -3.44 A, RG = 2.7 W Fall time VDD = -30 V, V GS = -10 V, ID = -3.44 A, RG = 2.7 W Rev.1.3 Page 3 2007-03-02 BSO613SPV G Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Qgs - 1.6 2.4 Qgd - 10 15 Qg - 20 30 V(plateau) - -3.74 - Dynamic Characteristics Gate to source charge nC VDD = -48 V, ID = -3.44 A Gate to drain charge VDD = -48 V, ID = -3.44 A Gate charge total VDD = -48 V, ID = -3.44 A, V GS = 0 to -10 V Gate plateau voltage V VDD = -48 V , I D = -3.44 A Parameter Symbol Values Unit min. typ. max. IS - - -3.44 ISM - - -13.8 VSD - -0.87 -1.16 V trr - 56 84 ns Qrr - 38 57 nC Reverse Diode Inverse diode continuous forward current A T A = 25 °C Inverse diode direct current,pulsed T A = 25 °C Inverse diode forward voltage VGS = 0 V, I F = -3.44 A Reverse recovery time VR = -30 V, IF=I S , di F/dt = 100 A/µs Reverse recovery charge VR = -30 V, IF=l S , diF/dt = 100 A/µs Rev.1.3 Page 4 2007-03-02 BSO613SPV G Power Dissipation Drain current Ptot = f (T A) ID = f (TA ) parameter: VGS ³ 10 V BSO613SPV BSO613SPV -3.8 2.8 W A 2.4 -3.2 2.2 -2.8 1.8 ID Ptot 2.0 -2.4 1.6 -2.0 1.4 1.2 -1.6 1.0 -1.2 0.8 0.6 -0.8 0.4 -0.4 0.2 0.0 0 20 40 60 80 100 120 °C 0.0 0 160 20 40 60 80 100 °C 120 TA TA Safe operating area Transient thermal impedance I D = f ( VDS ) ZthJC = f (tp ) parameter : D = 0 , T A = 25 °C parameter : D = tp /T -10 2 BSO613SPV 10 2 BSO613SPV K/W A tp = 550.0µs /I D 1 = ID RD S( V DS 10 1 1 ms ) on ZthJC -10 160 10 ms 10 0 -10 0 D = 0.50 10 -1 0.20 0.10 0.05 -10 -1 10 -2 0.02 single pulse 0.01 DC -10 -2 -1 -10 -10 0 -10 1 V -10 2 VDS Rev.1.3 10 -3 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 1 s 10 3 tp Page 5 2007-03-02 BSO613SPV G Typ. output characteristic Typ. drain-source-on-resistance I D = f (VDS); T j=25°C parameter: tp = 80 µs RDS(on) = f (ID ) parameter: VGS BSO613SPV A BSO613SPV Ptot = 2.50W 0.42 W j i h -7.0 VGS [V] a -3.0 g -3.5 c -3.7 d -4.0 e -4.2 f -4.5 g -4.7 h -5.0 i -5.5 d j -10.0 f -6.0 ID b -5.0 e -4.0 b c d e f 0.36 0.32 RDS(on) -8.5 0.28 0.24 0.20 0.16 -3.0 g 0.12 c -2.0 i 0.08 b h j VGS [V] = -1.0 0.04 a 0.0 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V 0.00 0.0 -5.0 b c d e f -3.5 -3.7 -4.0 -4.2 -4.5 -1.0 -2.0 g h i j -4.7 -5.0 -5.5 -10.0 -3.0 -4.0 -5.0 A VDS -7.0 ID Typ. transfer characteristics I D= f ( V GS ) Typ. forward transconductance VDS³ 2 x I D x RDS(on)max gfs = f(ID); Tj=25°C parameter: tp = 80 µs parameter: gfs -10 7 A S -8 5 gfs ID -7 -6 4 -5 3 -4 -3 2 -2 1 -1 0 0 -1 -2 -3 -4 0 0 -6 VGS V Rev.1.3 Page 6 -1 -2 -3 -4 -5 -6 -7 -8 A -10 ID 2007-03-02 BSO613SPV G Drain-source on-state resistance Gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (Tj) parameter : I D = -3.44 A, VGS = -10 V parameter: VGS = VDS , ID = 1 mA BSO613SPV -5.0 0.34 W V -4.0 VGS(th) RDS(on) 0.28 0.24 0.20 0.16 -3.5 98% -3.0 98% -2.5 typ -2.0 typ. 0.12 2% -1.5 0.08 -1.0 0.04 -0.5 0.00 -60 -20 20 60 °C 100 0.0 -60 180 -20 20 60 100 180 °C Tj Tj Typ. capacitances Forward characteristics of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS=0V, f=1 MHz parameter: Tj , tp = 80 µs 10 4 -10 2 pF BSO613SPV A 10 3 -10 1 IF C Ciss Coss 10 2 -10 0 Crss Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 1 0 -5 -10 -15 -20 -25 -30 V -40 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VSD VDS Rev.1.3 -10 -1 0.0 Page 7 2007-03-02 BSO613SPV G Avalanche energy Typ. gate charge EAS = f (Tj) VGS = f (QGate ) parameter: ID = -3.44 A pulsed para.: I D = -3.44 A , VDD = -25 V, RGS = 25 BSO613SPV 160 -16 mJ V -12 VGS EAS 120 100 80 -10 -8 0,2 VDS max 60 -6 40 -4 20 -2 0 25 45 65 85 105 125 0 0 165 °C 4 8 12 0,8 VDS max 16 20 24 nC 30 QGate Tj Drain-source breakdown voltage V(BR)DSS = f (Tj) BSO613SPV -72 V(BR)DSS V -68 -66 -64 -62 -60 -58 -56 -54 -60 -20 20 60 100 °C 180 Tj Rev.1.3 Page 8 2003-03-02 BSO613SPV G Rev.1.3 Page 9 2007-03-02