Rev. 2.1 BSP324 SIPMOS Power-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS(on) • Logic Level ID • dv/dt rated 400 V 25 Ω 0.17 A SOT-223 • Pb-free lead plating; RoHS compliant x Qualified according to AEC Q101 Type Package Pb-free Packaging Tape and Reel Information Marking BSP324 PG-SOT223 Yes L6327: 1000 pcs/reel Non dry Maximum Ratings, at Tj = 25 °C, unless otherwise specified Symbol Parameter Continuous drain current BSP324 Value Unit A ID TA=25°C 0.17 TA=70°C 0.14 Pulsed drain current ID puls 0.68 dv/dt 6 VGS ±20 TA=25°C Reverse diode dv/dt kV/µs IS=0.17A, VDS=320V, di/dt=200A/µs, Tjmax=175°C Gate source voltage ESD Class (JESD22-A114-HBM) V 1A (>250V, <500V) Power dissipation Ptot 1.8 W -55... +150 °C TA=25°C Operating and storage temperature T j , Tstg IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 2009-08-18 Rev. 2.1 BSP324 Thermal Characteristics Symbol Parameter Values Unit min. typ. max. - 16 25 - 85 115 - 45 70 Characteristics Thermal resistance, junction - soldering point RthJS K/W (Pin 4) SMD version, device on PCB: RthJA @ min. footprint @ 6 cm2 cooling area 1) Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. V(BR)DSS 400 - - VGS(th) 1.3 1.9 2.3 Static Characteristics Drain-source breakdown voltage V V GS=0, I D=250µA Gate threshold voltage, VGS = V DS ID=94µA Zero gate voltage drain current µA IDSS V DS=400V, V GS=0, T j=25°C - 0.01 0.1 V DS=400V, V GS=0, T j=125°C - - 10 IGSS - 10 100 nA RDS(on) - 14.3 22 Ω RDS(on) - 13.6 25 Gate-source leakage current V GS=20V, VDS=0 Drain-source on-state resistance V GS=4.5V, I D=0.05A Drain-source on-state resistance V GS=10V, I D=0.17A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (single layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2009-08-18 Rev. 2.1 BSP324 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 0.09 0.19 - S pF Dynamic Characteristics Transconductance g fs V DS≥2*I D*RDS(on)max, ID=0.14A Input capacitance Ciss V GS=0, V DS=25V, - 103 154 Output capacitance Coss f=1MHz - 9.2 13.6 Reverse transfer capacitance Crss - 3.8 5.7 Turn-on delay time td(on) V DD=225V, V GS=10V, - 4.6 6.9 Rise time tr ID=0.17A, RG=6Ω - 4.4 6.6 Turn-off delay time td(off) - 17 25 Fall time tf - 68 102 - 0.35 0.45 - 2.17 2.82 - 4.54 5.9 V(plateau) VDD =320V, ID =0.17A - 3.6 - V IS - - 0.17 A - - 0.68 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =320V, ID =0.17A VDD =320V, ID =0.17A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD V GS=0, I F=0.17A - 0.8 1.2 V Reverse recovery time trr V R=200V, IF=l S, - 85 127 ns Reverse recovery charge Qrr di F/dt=100A/µs - 104 156 nC Page 3 2009-08-18 Rev. 2.1 BSP324 1 Power dissipation 2 Drain current Ptot = f (TA) ID = f (T A) parameter: VGS≥ 10 V BSP324 1.9 BSP324 0.18 W A 1.6 0.14 0.12 1.2 ID P tot 1.4 0.1 1 0.08 0.8 0.6 0.06 0.4 0.04 0.2 0.02 0 0 20 40 60 80 100 120 0 °C 160 0 20 40 60 80 100 120 °C TA 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJA = f (tp) parameter : D = 0 , TA = 25 °C parameter : D = t p/T 10 1 BSP324 10 A K/W 0 t = 170.0µs p ID / ID = 10 2 BSP324 -1 V 10 1 10 0 Z thJA 10 160 TA DS 1 ms n) S(o RD D = 0.50 10 ms 0.20 0.10 10 -2 10 0.05 single pulse -1 0.02 0.01 DC 10 -3 10 0 10 1 10 2 V 10 3 VDS 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 s 10 tp Page 4 2009-08-18 4 Rev. 2.1 BSP324 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS) RDS(on) = f (ID) parameter: Tj = 25 °C, V GS parameter: Tj = 25 °C, V GS 0.6 22 Ω R DS(on) 18 0.4 16 14 12 0.3 10V 7V 6V 5V 4.5V 4.3V 4.1V 3.9V 3.7V 0.2 0.1 3.7V 10 3.9V 4.1V 8 4.3V 4.5V 6 5V 6V 4 7V 10V 2 0 0 0 1 2 3 4 5 6 7 8 10 0 0.05 0.1 0.15 0.2 0.25 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max g fs = f(I D) parameter: Tj = 25 °C parameter: Tj = 25 °C 0.35 A ID 0.35 A ID 0.35 0.36 S A 0.28 ID gfs 0.25 0.24 0.2 0.2 0.15 0.16 0.12 0.1 0.08 0.05 0.04 0 0 1 2 3 0 V 5 VGS Page 5 0 0.05 0.1 0.15 0.2 0.25 2009-08-18 Rev. 2.1 BSP324 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (T j) parameter : ID = 0.17 A, VGS = 10 V parameter: VGS = VDS; ID =94µA BSP324 130 2.6 Ω V 98% 110 2.2 - VGS(th) R DS(on) 100 90 80 2 typ. 1.8 70 1.6 60 1.4 50 2% 40 1.2 98% 30 1 20 typ 10 0 -60 -20 20 60 0.8 100 °C 0.6 -60 180 -20 20 60 100 Tj °C 160 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (V DS) IF = f (V SD) parameter: VGS=0, f=1 MHz, Tj = 25 °C parameter: Tj 10 3 10 0 BSP324 A pF Ciss 2 10 -1 10 -2 C IF 10 Coss 10 1 T j = 25 °C typ Crss T j = 150 °C typ T j = 25 °C (98%) T j = 150 °C (98%) 10 0 0 10 5 10 15 20 V 30 V DS -3 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2009-08-18 Rev. 2.1 BSP324 13 Typ. gate charge 14 Drain-source breakdown voltage VGS = f (QG); parameter: VDS , ID = 0.17 A pulsed, Tj = 25 °C V(BR)DSS = f (Tj) BSP324 16 490 BSP324 V V V (BR)DSS 470 V GS 12 10 0.2 VDS max 460 450 440 430 8 0.5 VDS max 420 0.8 VDS max 410 6 400 4 390 380 2 370 0 0 1 2 3 4 5 nC 360 -60 7 QG -20 20 60 100 °C 180 Tj Page 7 2009-08-18 Rev 2.1 Page 8 BSP324 2009-08-18